• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.111-112
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• 2007

Silicon nitride (SiN) 박막을 플라즈마 응용화학기상법을 이용하여 증착하였다. SiN박막의 전하밀도는 일반화된 회귀 신경망과 유전자 알고리즘을 이용하여 모델링하였다. PECVD 공정은 Box Wilson 실험계획표를 이용하여 수행하였다. $SiH_4$ 유량변화에 따른 온도의 영향은 미미하였다. 그러나, 저 전력에서의 온도증가 (또는 저온에서의 전력의 증가)에 따라 전하밀도는 급격히 상승하였으며, 이는 [N-H]의 증가에 기인하는 것으로 해석되었다. $SiH_4$ 유량의 증가 (또는 고온에서의 전력의 증가)에 따라 전하밀도는 감소하고 있으며, 이는 [Si-H]의 증가에 기인하는 것으로 이해된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.88-88
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• 2000

AlN는 약 6.2eV 정도의 큰 에너지 밴드폭을 가지고 있어서 S, GaAs에 비해 높은 항복전압과 물리적인 강도를 가지고 있어서 고온 고전력 전자소자로 응용이 되어지며, 또한 압전특성이 우수하기 때문에 SAW 소자에 응용이 되어진다. 또한 최근 광소자 재료로 연구가 되어지고 있는 GaN의 Buffer Layer로도 사용이 되어지고 있다. 본 실험은 Plasma Source를 사용한 PaMBE 장비를 사용하여 Si 기판위에 AlN 박막을 성장시키고자 하였다. AlN 박막을 성장 온도를 변화시켜가며 Si(100) 과 Si(111)기판위에 성장을 수행하였으며 성장온도의 변화에 따른 AlN 박막의 결정성을 살펴보았다. AlN/Si(100)은 XRD와 DCD 분석에 의해 AlN 박막이 (0001) 방향으로 우선배향되었음을 알 수 있었고, AlN/Si(111)은 XRD, DCD 그리고 TEM분석에 의해서 단결정 AlN 박막임을 확인 할 수 있었다.

• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.253-261
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• 1992

Ti-Al intermetallic compounds which can be used in gas turbine at elevated temperature were inves-tigated in order to improve oxidation resistance by the formation of protective oxide scale. Four Ti-Al alloys were prepared by plasma arc melting. As the amount of Al was increased among the alloys, oxida-tion resistance was improved by the formation of relatively purer Al2O3 layer. However, the alloys which have less amount of Al formed a duplex layer of Al2O3 and TiO2. When samples were oxidized in pure oxygen instead of air, oxidation resistance was improved because of formation of the purer Al2O3 layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.118-119
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• 2007

오스테나이트계 스테인리스 AISI304L강을 저온 플라즈마 분위기에서 표면에 C와 N을 주입하면 내식성의 저하 없이 표면경도를 증가 시킬 수 있다. 이 공정에서 온도에 따른 영향을 조사하기위해 $380^{\circ}C{\sim}430^{\circ}C$의 온도 범위에서 20시간 동안 실시하였다. 경화층의 두께는 $7{\sim}16\;{\mu}m$정도였으며, N의 농도가 높은 영역과 C의 농도가 높은 영역으로 나뉘어 형성되었고, N이 풍부한 영역이 표면층에 형성되고 그 아래에 C의 농도 높은 영역이 형성되었다. 표면층은 질소에 의해 확장된 오스테나이트(${\gamma}_N$)상을 가지며 고온에서 처리한 경우 석출물이 형성되었다. 표면경도는 약 $900\;HV_{0.01}{\sim}1200\;HV_{0.01}$로 측정되었다.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.8 no.1
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• pp.33-39
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• 2010

The electrolytic reduction of a spent oxide fuel involves a liberation of the oxygen in a molten LiCl electrolyte, which results in a chemically aggressive environment that is too corrosive for typical structural materials. Accordingly, it is essential to choose the optimum material for the processing equipment that handles the high molten salt. In this study, hot corrosion studies were performed on bare as well as coated superalloy specimens after exposure to lithium molten salt at $675^{\circ}C$ for 216 h under an oxidizing atmosphere. The IN713LC superalloy specimens were sprayed with an aluminized NiCrAlY bond coat and then with an $Y_2O_3$ top coat. The bare superalloy reveals an obvious weight loss due to spalling of the scale by the rapid scale growth and thermal stress. The chemical and thermal stability of the top coat has been found to be beneficial for increasing to the corrosion resistance of the structural materials for handling high temperature lithium molten salts.

• Journal of Korea Society of Industrial Information Systems
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• v.24 no.5
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• pp.9-16
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• 2019

In today's global energy market, the importance of green energy is emerging. Hydrogen energy is the future clean energy source and one of the pollution-free energy sources. In particular, the fuel cell method using hydrogen enhances the flexibility of renewable energy and enables energy storage and conversion for a long time. Therefore, it is considered to be a solution that can solve environmental problems caused by the use of fossil resources and energy problems caused by exhaustion of resources simultaneously. The purpose of this study is to efficiently produce hydrogen using plasma, and to study the optimization of DME reforming by checking the reforming reaction and yield according to temperature. The research method uses a 2.45 GHz electromagnetic plasma torch to produce hydrogen by reforming DME(Di Methyl Ether), a clean fuel. Gasification analysis was performed under low temperature conditions ($T3=1100^{\circ}C$), low temperature peroxygen conditions ($T3=1100^{\circ}C$), and high temperature conditions ($T3=1376^{\circ}C$). The low temperature gasification analysis showed that methane is generated due to unstable reforming reaction near $1100^{\circ}C$. The low temperature peroxygen gasification analysis showed less hydrogen but more carbon dioxide than the low temperature gasification analysis. Gasification analysis at high temperature indicated that methane was generated from about $1150^{\circ}C$, but it was not generated above $1200^{\circ}C$. In conclusion, the higher the temperature during the reforming reaction, the higher the proportion of hydrogen, but the higher the proportion of CO. However, it was confirmed that the problem of heat loss and reforming occurred due to the structural problem of the gasifier. In future developments, there is a need to reduce incomplete combustion by improving gasifiers to obtain high yields of hydrogen and to reduce the generation of gases such as carbon monoxide and methane. The optimization plan to produce hydrogen by steam plasma reforming of DME proposed in this study is expected to make a meaningful contribution to producing eco-friendly and renewable energy in the future.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.238-244
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• 2013

Doping process using laser is an important process in fabrication of solar cell for heat treatment. However, the process of using the furnace is difficult to form a selective emitter doping region. The case of using a selective emitter laser doping is required an expensive laser equipment and induce the wafer's structure damage due to high temperature. This study, we fabricated a new costly plasma source. Through this, we research the selective emitter doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (a few tens kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer. Atmospheric plasma treatment time was 15 s and 30 s, and current for making the plasma is 40 mA and 70 mA. We investigated a doping profile by using SIMS (Secondary Ion Mass Spectroscopy) and we grasp the sheet resistance of electrical character by using doping profile. As result of experiment, prolonged doping process time and highly plasma current occur a deeper doping depth, moreover improve sheet resistance. We grasped the wafer's surface damage after atmospheric pressure plasma doping by using SEM (Scanning Electron Microscopy). We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• Journal of the Korean Society for Nondestructive Testing
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• v.29 no.5
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• pp.450-457
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• 2009

Periodical thermal shock can introduce defects in thermal barrier coating made by layers of CoNiCrAlY bond coating(BC) and $ZrO_2-8wt%Y_2O_3$ ceramic top coating(TC) on Inconel-738 substrate using plasma spraying. Thermal shock test is performed by severe condition that is to heat until $1000^{\circ}C$ and cool until $20^{\circ}C$. As the number of cycle is increased, the fatigue by thermal shock is also increased. After test, the micro-structures and mechanical characteristics of thermal barrier coating were investigated by SEM, XRD. The TGO layer of $Al_2O_3$ is formed between BC and TC by periodical thermal shock test, and its change in thickness is inspected by eddy current test(ECT). By ECT test, it is shown that TGO and micro-crack can be detected and it is possible to predict the life of thermal barrier coating.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.86-91
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• 1999

We have fabricated high-$\textrm{T}_c$ superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$(YBCO) grain boundary junctions at a step-edge on (001) $\textrm{SrTiO}_3$(STO) substrates. A diamond-like carbon (DLC) film grown by plasma enhanced chemical vapor deposition were used as an ion milling mask to make steps on the STO (100) single crystal and was removed by an oxygen reactive ion etch process. The c-axis oriented YBCO and TO thin films were deposited epitaxially on the STO substrate with a step-edge by pulsed laser deposition. The grain boundary junctions were formed at the top and the bottom of the step. The junctions worked at temperatures above 77 K, and had I\ulcornerR\ulcorner products of 7.5mV at 16K and 0.3 mV at 77K, respectively. The I-V characteristics of these junctions showed the shape of the two noisy resistively shunted junction model.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.43 no.12
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• pp.1048-1053
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• 2015

Ablative materials in a thermal protection system for atmospheric re-entry suffers from the most severe heat fluxes and temperatures, which induces surface recession in the thickness direction. In this paper, a 0.4MW arc-heated wind tunnel is operated to test for ablative materials, and a non-contact three-dimensional surface measuring system is used to evaluate the different surface characteristics of them. In particular, by postprocessing the three-dimensional image data, the surface roughness and recession of ablative materials can be calculated before and after the wind tunnel test. Moreover, the surface properties are analyzed quantitatively by comparing volume and mass losses of the test specimens.