• Title/Summary/Keyword: 고려대학교

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격자 기반 양자내성암호 양자 분석 기술

  • Chanho Jeon;Donghoe Heo;Myeonghoon Lee;Changwon Lee;Younglok Choi;Byeongho Cheon;Suhri Kim
    • Review of KIISC
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    • v.33 no.1
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    • pp.23-30
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    • 2023
  • Peter Shor의 양자 컴퓨터를 이용하여 다항식 시간 안에 인수분해 문제를 해결할 수 있는 알고리즘이 제안됨에 따라, 다양한 수학적 난제를 기반으로 한 새로운 양자내성암호에 대한 연구가 진행되었다. 현재 가장 많이 연구되고 있으며 유망한 양자내성암호는 격자 기반 암호이고, 격자 기반 암호의 안전성을 입증하기 위해 격자 암호 분석 알고리즘들 또한 함께 연구되고 있다. 본 논문에서는 격자 암호 분석 알고리즘 및 양자 탐색 알고리즘을 적용한 격자 암호양자 분석 기술들에 대해서 설명한다.

Effect of Electrode Formation Process using E-beam Evaporation on Crystalline Silicon Solar Cell (E-Beam evaporation을 이용한 전극 형성 공정이 결정질 실리콘 태양전지에 미치는 영향 분석)

  • Choi, Dongjin;Park, Se Jin;Shin, Seung Hyun;Lee, Changhyun;Bae, Soohyun;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Current Photovoltaic Research
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    • v.7 no.1
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    • pp.15-20
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    • 2019
  • Most high-efficiency n-type silicon solar cells are based on the high quality surface passivation and ohmic contact between the emitter and the metal. Currently, various metalization methods such as screen printing using metal paste and physical vapor deposition are being used in forming electrodes of n-type silicon solar cell. In this paper, we analyzed the degradation factors induced by the front electrode formation process using e-beam evaporation of double passivation structure of p-type emitter and $Al_2O_3/SiN_x$ for high efficiency solar cell using n-type bulk silicon. In order to confirm the cause of the degradation, the passivation characteristics of each electrode region were determined through a quasi-steady-state photo-conductance (QSSPC).

Effect of Sputtering Power on Optical and Electrical Properties of SnOx Electron Transport Layer Deposited by RF-magnetron Sputtering (RF-마그네트론 스퍼터링으로 증착된 산화주석 전자수송층의 광학적 및 전기적 특성에 대한 증착 전력의 영향)

  • Hwang, Ji Seong;Lee, Wonkyu;Hwang, Jae Keun;Lee, Sang-Won;Hyun, Ji Yeon;Lee, Solhee;Jeong, Seok Hyun;Kang, Yoonmook;Kim, Donghwan;Lee, Hae-Seok
    • Current Photovoltaic Research
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    • v.9 no.1
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    • pp.1-5
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    • 2021
  • The properties of the electron transport layer (ETL) have a great effect on perovskite solar cell performance. Depositing conformal SnO2 ETL on bottom textured silicon cells is essential to increase current density in terms of the silicon-perovskite tandem solar cells. In the recent study, the SnO2 electron transport layer deposited by the sputtering method showed an efficiency of 19.8%. Also, an electron transport layer with a sputtered TiO2 electron transport layer in a 4-terminal tandem solar cell has been reported. In this study, we synthesized SnOx ETL with a various sputtering power range of 30-60W by Radio-frequency (RF)-magnetron sputtering. The properties of SnOx thin film were characterized using ellipsometer, UV-vis spectrometer, and IV measurement. With a sputtering power of 50W, the solar cell showed the highest efficiency of 13.3%, because of the highest fill factor by the conductivity of SnOx film.