• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.279-285
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• 2000

High quality crystals of $YMnO_3$, which is interested in non-volatile memory device application, were grown by the floating zone method. Optimum condition for powder synthesis was established to be $1200^{\circ}C$ for 10 hrs and optimum condition for sintering of $YMnO_3$feed-rod was established to be $1500^{\circ}C$ for 10hrs respectively. It was found from non-seeded growth experiment that $YMnO_3$crystal was grown preferentially to the [1010] orientation. The $YMnO_3$single crystal, which was grown to the direction of perpendicular to C-axis, was typically 5mm in diameter, 50 mm in length and showed dark-blue color.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.371-371
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• 2012

단일 Si 나노와이어 전체에 대한 편광 및 공간 분해된 라만 산란 실험을 보고한다. 투과전자현미경 실험을 통해 나노와이어가 길이 방향으로 성장함에 따라서 두께가 점차 증가할 뿐만 아니라 결정 방향이 비균질적으로 형성됨을 알 수 있었다. 비균질적인 결정성은 아래 부분에서 두드러지게 나타났다. Si 나노와이어의 길이 방향으로 공간 분해된 마이크로-라만 산란 실험을 수행한 결과 에너지 및 선폭에 변화가 있음을 알았다. 이러한 변화와 결정 방향의 비균질성을 이해하기 위하여 나노와이어의 위 부분과 아래 부분으로부터 각각 편광 라만 산란 실험을 하였다. 라만 편광 선택 규칙을 이용하여 입사 편광 각도의 변화에 따른 광학 포논의 세기 변화를 분석한 결과 결정 방향이 부분적으로 어긋나 있는 나노와이어의 아래 부분에서의 편광 비율의 수치가 위 부분에서의 수치보다 작게 나타남을 알 수 있었으며 이는 결정성의 변화와 일치한다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.1
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• pp.18-30
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• 1993

A numerical analysis has been carried out on the Czochralski flow fields when uniform and nonuniform magnetic fields are applied. Czochralski flow fields are governed by buoyancy forces, thermocapillarity, centrifugal forces, and applied magneic fields. In this analysis, pressure and three components of velocity vectors are obtained, and circumferential electrical currents are calculated. When a uniform magnetic field is applied, all the velocity components are decreased and the circumferential electric currents near the crystal surface are increased as the magnetic field intensity is increased. In the case of a nonuniform field, the flows in a meridional plane are suppressed and the circumferential velocity is increased as the non uniformity is increased. The understanding on the Czochralski flow fields under the influence of magnetic fields can lead to the study on the behavior of the concentration of the solute and impurities.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.7
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• pp.653-658
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• 2016

High pressure components of a gas turbine engine are generally made of nickel-base superalloys, using precision casting process due to complicated geometries with intricate channels and cooling holes. Turbine components manufactured from directionally solidified and single crystal materials have columnar grains; however, it is found that the crystals do not grow in its preferred direction, although the orientation can be controlled. This anisotropy can lead to the variations of elastic and Hill's parameters in constitutive equations, and they alter stress distributions and the low cycle fatigue life. We aims to evaluate the effects of perturbed crystal orientations on the structural integrity of a directionally solidified nozzle using low cycle fatigue life. We also attempt to show the necessity for the control of allowed manufacturing errors and stochastic analysis. Our approaches included conjugate heat transfer and structural analysis, along with low cycle fatigue life assessment.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.241-245
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• 2000

Thick GaN films were grown on (0001) sapphire substrates using the direct reaction gallium and ammonia. The GaN films grew dominantly along [0002] direction, but included the growth of GaN(1010) planeq with V-shaped facetted surfaces at low temperature. With increasing growth temperature, however, the growth of GaN (1010) and (1011) planes was appeared from the films, which gives rise to the growth of hexagonal crystal with pyramid-shaped surface. The growth rate of GaN films increased with increasing growth temperature, but decreased at $1270^{\circ}C$ because the GaN films began to decompose into Ga and N at the temperature. It seemed that the crystal and optical qualities of the GaN films improve with increasing $NH_3$ flow rate. From X-ray diffraction (XRD) and photoluminescence (PL) measurements, it was observed that the yellow luminescence (YL) appeared to be significant as the peak intensity of (1010) plane of XRD spectra increased.

• Korean Journal of Crystallography
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• v.3 no.2
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• pp.98-110
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• 1992

B-SiC thin films were fabricated on Si(100) substrate under 1 atom by fVD. The effects of deposition conditions on the growth and the properties especially crystallinity and prefer ential alignment of these thin films were investigated. SiH4 and CH4 were used as source gases and H2 as Carrier gas. Th9 growth Of B-SiC thin films with changing parameters such as the growth temperature, the ratio of source gases (SiH4/CH4 ) and the total amount of source gases. The grown thin films were characterized by using SEM, a -step, XRD, Raman Spectro- scopy and TEM. Chemical conversion process improved the quality of thin films due to the formation of SiC buffer layer. The crystallinity of SiC thin films was improved when the growth temperature was higher than l150t and the amount of CH4 exceeded that of SiH4. The better crystallinity, the better alignment to the crystalline direction of substates. TEM analyses of the good quality thin films showed that the grain size was bigger at the surface than at the interface and the defect density is not depend on the ratio of the source gases.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.4
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• pp.149-153
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• 2021

ε-Ga₂O₃ thin films were grown on 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD) and crystalline quality were evaluated depend on growth conditions. It was found that the best conditions of the ε-Ga₂O₃ were grown at a growth temperature of 665℃ and an oxygen flow rate of 200 sccm. Two-dimensional growth was completed after the merge of hexagonal nuclei, and the arrangement direction of hexagonal nuclei was closely related to the crystal direction of the substrate. However, it was confirmed that crystal structure of the ε-Ga₂O₃ had an orthorhombic rather than hexagonal. Crystal phase transformation was performed by thermal treatment. And a β-Ga₂O₃ thin film was grown directly on 4H-SiC for the comparison to the phase transformed β-Ga₂O₃ thin film. The phase transformed β-Ga₂O₃ film showed better crystal quality than directly grown one.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.231-238
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• 2015

Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. Among the many crystal growth methods, vertical Bridgman process is an excellent commercial method for growing high quality sapphire crystals with c-axis. In this study, the thermally induced stress in Sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model. A vertical Bridgman process of 2-inch Sapphire was considered for the model. The effects of vertical and transverse temperature gradients on the thermal stress during the process were discussed based on the finite element analysis results.

• Product Safety
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• s.199
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• pp.86-91
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• 2010

세계는 지금 기후변화와 자원위기로 심각한 위협에 직면하고 있다. 이처럼 에너지와 환경문제가 국가경제의 미래와 기업 생존을 결정하는 주요변수로 부각되고 있으나 대다수의 중소기업들은 정보 기술 인력 부족 등으로 인해 녹색성장 방향에 적절히 대응하지 못하고 있는 실정이다. 본고에서는 중소기업의 녹색성장 정책 현황 및 대응방안에 대해 알아보자 한다.

• Product Safety
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• s.197
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• pp.46-53
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• 2010

세계는 지금 기후변화와 자원위기로 심각한 위협에 직면하고 있다. 이처럼 에너지와 환경문제가 국가경제의 미래와 기업 생존을 결정하는 주요변수로 부각되고 있으나 대다수의 중소업들은 정보 기술 인력 부족 등으로 인해 녹생성장 방향에 적절히 대응하지 못하고 있는 실정이다. 본고에서는 중소기업의 녹생성장 정책 현황 및 대응방안에 대해 알아보자 한다.