• Journal of the Korean Ceramic Society
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• v.29 no.4
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• pp.65-65
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• 1992

Role of CaO in the sintering of 12Ce-TZP ceramics was studied. The addition of small amounts of CaO increase the densification rate of 12Ce-TZP by altering lattice defect structure and the diffusion coefficient of the rate controlling species, namely cerium and zirconium cations. CaO also inhibits grain growth during sintering and allows the sintering process to proceed to theoretical density by maintaining a high diffusion flux of vacancies from the pores to the grain boundaries. The inhibition of grain growth is accomplished by the segregation of solute at the grain boundaries, causing a decrease in the grain boundary mobility. The segregation of calcium was revealed by AES study.

• Korean Journal of Crystallography
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• v.10 no.2
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• pp.136-144
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• 1999

고주파 마그네트론 스퍼터법을 이용한 Al:ZnO(AZO) 박막 증착시, 증착 조건에 따른 미세구조 변화를 조사하였으며, 이를 전기적 광학적 성질과 상관하여 고찰하였다. 박막은 기판 온도가 증가함에 따라 c축이 기판표면에 수직으로 놓이는 주상구조로 성장하였으며, 스퍼터 파워가 증가함에 따라 증착 속도와 입자의 크기가 증가한 반면 결정성은 저하되었다. 증착된 박막은 가시광선영역에서 85% 이상의 광 투과도를 나타내었으며 Al 첨가에 의해 광학적 밴드갭이 약 0.15 eV 증가하였다. 주상구조로 성장한 입자들은 저각 입계(low angle grain boundary)와 특수 입계(special grain boundary)를 형성하였으며, 특히 Σ=7 [001] (210)A/(110)B 입계의 규칙적인 원자배열 및 원자이완을 HRTEM을 이용하여 고찰하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.122-127
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• 2000

Microstructural evolutions in ceria-stabilized zirconia (Ce-TZP) and alumina-dispersed Ce-TZP ceramics were investigated as functions of doping and annealing conditions. All of sintered specimens showed the relative density over 99 %. Sintered specimens had linear grain boundaries and normal grain shapes, but ceria-doped specimens had irregular grain shapes and nonlinear grain boundaries due to the diffusion-induced grain boundary migration during annealing at $1650^{\circ}C$ for 2 h. Mean grain boundary length of Ce-TZP with irregular grain shapes was higher than that of normal grain shapes, and was a value of 23pm at the maximum. Alumina particles dispersed in Ce-TZP inhibited the grain growth of zirconia particles. $Al_2O_3$Ce-TZP doped with ceria and annealed at $1650^{\circ}C$ for 2 h showed irregular grain shapes as well as small grain size. Added alumina particles showed the grain growth during sintering or annealing, and they changed the position from grain boundary to inside of the grains during the annealing. The specimens with normal grain shapes showed an intergranular fracture mode, whereas the specimens with irregular grain shapes showed a transgranular fracture mode during the crack propagation.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.914-920
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• 2001

The grain orientation distribution and grain boundary characterization of $ZrB_2$-ZrC composites sintered by a SPS(Spark Plasma Sintering) method, a new sintering technique were analyzed by the EBSP technique and then their crystallographic results have been compared with those of a sintered specimen using a PLS(Pressureless Sintering) method. In the $ZrB_2$-ZrC composite manufactured by SPS, (0001) planes of $ZrB_2$ were oriented in the direction normal to the specimen surface. In the case of PLS, those of $ZrB_2$ were oriented normal to the electron beam. In both cases of PLS and SPS, ZrC grains had the randomly oriented grain structure. The grain boundary characterization showed that low angle grain boundaries in the PLS and SPS processed materials constituted about 10% and 8% of the total number of boundaries, respectively, represented the only slight difference between the proportion of low angle grain boundary. However, in the distribution of CSL(Coincident Site Lattice) boundaries, it was shown the higher proportion of CSL boundaries with $\Sigma$ 3,5,7,9, 11 in the SPS processed material.

• Electronics and Telecommunications Trends
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• v.8 no.4
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• pp.49-54
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• 1993

최근의 정보 통신 기기들은 정보 통신 서비스에 대한 요구에 따라 다기능, 고속 및 대용량화로 비약적인 발전을 하고 있으며 휴대 통신 단말기의 경우 이용자의 편리를 위하여 소형화 및 경박 단소화를 지향하고 있다. 따라서 부품에 대한 요구 사항도 이들 추세에 따라 소형화, 다기능화 및 고신뢰화를 요구하고 있다. 따라서, 하나의 소자로 복합적인 기능을 갖는 다기능성 소자의 개발이 바람직하다. $SrTiO_3$를 모체로 하는 세라믹 유전체는 반도체화 세라믹의 결정입계에 산화물로 절연층을 형성하여 하나의 소자로 Capacitor 와 Varistor 기능을 동시에 갖는 다기능 소자용 소재로 이용되고 있다. 본 실험에서는 $SrTiO_3$조성비 및 입계절연화제의 확산 온도에 따라 이들이 전기전도 특성에 미치는 영향에 대하여 검토하였다.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.699-705
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• 1995

Effect of the grain boundary phases in Si$_3$N$_4$ ceramics on the fracture tonghness has been investigated. The Si$_3$N$_4$-Y$_2$O$_3$-SiO$_2$, (YS) and Si$_3$N$_4$-Y$_2$O$_3$-Al$_2$O$_3$(YA) systems were Can/HIP treated at 1750$^{\circ}C$ and then heat-treated at 1800∼2000$^{\circ}C$. The fracture toughness of the YA system, the grain boundary phase was only glass phase after heat-treatement, was increased. That of the YS system, however, the grain boundary phase was changed from crystalline and glass to glass phase after the heat -treatement above 1900$^{\circ}C$, was abruptly decreased. The reason of the sudden drop of the fracture toughness of the YS system was believed that the change of the grain boundary phases from crystalline and glass to glass phase effected un the fracture behavior.

• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.587-592
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• 2001

난소결성의 TiN에 방전 플라즈마 소결법을 적용하여 고밀도 TiN 소결체를 제조하였다. 제조된 TiN 시편의 소결특성 및 입성장 정도를 평가하였으며, 전자현미경을 이용하여 미세구조를 분석하였다. Milling 과정동안 잠입된 $Al_2$O$_3$는 1$700^{\circ}C$ 이상의 소결온도에서 TiN 분말과 반응하여 부분적으로 액상을 형성하여 물질이동을 가속화함으로써 치밀화가 저온에서 시작하도록 함으로써 궁극적으로 결정립성장 제어에 기여하는 것으로 확인되었다. 이러한 현상은 굽어진 TiN 결정입계와 결정입계 삼중점에 존재하는 $Al_2$O$_3$를 포함하는 2차 결정상 cluster의 존재로 설명되어진다.

• Korean Journal of Materials Research
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• v.7 no.6
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• pp.464-471
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• 1997

Melt-overflow 급냉응고장치를 이용하여 두께 약 300$\mu\textrm{m}$, 폭 10mm의 Mg-Zn합급 스트립을 연속적으로 제조하였다. 또한 알루미늄을 첨가하여, 첨가원소에 따른 결정립미세화와 기계적강도에 미치는 영향을 조사하였다. 스트립의 미세응고조직은 전자현미경(TEM, SEM)과 image analyzer를 이용하여 분석하였으며, 경도시험으로 기계적특성을 평가하였다. Mg-5wt%Zn합금 스트립의 경도는 결정립크기의 제곱근에 반비례하여 급냉응고에 의한 결정립미세화 효과로 같은 조성의 일반주조 합금보다 2배 이상의 높은 경도값을 가지며, 알루미늄을 첨가함으로서 2배 정도의 결정립미세화 효과를 얻어 경도가 더욱 증가하였다. 결정입계를 따라 생성된 금속간화합물은 마그네슘화합금의 입계부식을 방지하여 우수한 내식성을 갖는다. 따라서 적절한 합금설계와 급냉응고법을 적용시키면 마그네슘합금의 취약성을 보완하며 경량성의 장점을 최대한 활용할 수 있다.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.111-116
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• 2000

Fracture mode and carbide reactions of cast alloy 738LC during thermal exposure and creep at 816$^{\circ}C$/440MPa and 982$^{\circ}C$/152MPa were investigated. Crystallographic transgranular failure was observed in the specimen crept at 816$^{\circ}C$ due to shearing on the slip plane. Because selective oxidation at the grainboundaries which was exposed at the surface leads reduction in surface energy, however, early initiation of crack at the grainboundaries and intergranular failure were observed in the specimen crept at 982$^{\circ}C$/152MPa. As a result of decomposition of MC carbide at the tested temperatures, M(sub)23C(sub)6 carbide precipitated either on the grainboundaries or on the deformation band. The applied stress enhanced decomposition of MC. $\sigma$phase nucleated from Cr(sub)23C(sub)6 then grew to the ${\gamma}$+${\gamma}$\\` matrix. Precipitation of $\sigma$was accelerated by increasing temperature and applied stress.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.558-563
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• 1996

Fracture strength of $Si_{3}N_{4}/20$ vol% SiC nanocomposites with fifferent sintering additives was measured. Strength of nanocomposites with 6 wt% $Y_{2}O_{3}$ and 2 wt% $Al_{2}O_{3}$ as sintering additives was higher at room temperature but significant strength degradation at elevated temperature was occured due to the softening of grain boundary phase. Fracture strength of 8 wt% $Y_{2}O_{3}$ doped sample was higher than that of $Al_{2}O_{3}$ added sample at $1400^{\circ}C$. The retention of high temperature strength in 8 wt% $Y_{2}O_{3}$ doped sample can be attributed to high softening temperature and crystallization of grain boundary glassy phase.