• Korean Journal of Materials Research
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• v.4 no.7
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• pp.750-758
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• 1994

The purpose of present study is to find out the formation mechanism of hemi-spherical grained(HSG) polysilicon film. Silicon film was deposited using LPCVD. Polycrystalline silicon film was deposited at $575^{\circ}C$ contained crystalline HSG in the amorphous matrix phase. The crystalline HSG can be categorized into two grains : lower grains and upper grains. Lower grains are located at interface between silicon dioxide and silicon film, and upper grains are located at surface. The growth orientations of HSG were identified as (311) or (111) directions for lower grains and perferentially (110) direction for upper grains. This difference of growth orientations seems to be caused by the difference of formation mechanisms. That is, lower grain is formed by soild phase crystallization, on the other hand, upper grain is formed by surface diffusion of silicon atoms. It was thus, proposed that the formation of practical HSG polysilicon film is mainly controlled by surface diffusion of silicon atoms.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.505-511
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• 1998

The silicide formation mechanisms of Co/Hf and Co/Nb bilayer on (100) Si have been investigated. We ob-served that crystallographic orientationso f the 500$^{\circ}C$ formed cobalt silcides were different each other with the varying intermediate layers. Epitaxial and non-epitaxial CoSi2 formed simultaneously in Co/Hf/(100Si. While only non-epitaxial CoSi2 formed in Co/Nb/(100) Si. The reason why the crystallographic orientation of CpSi2 is different for those two systems seemed to be relate to the formation and decomposition of stable reaction barriers at high temperature. The stable reaction barrier formed at high temperature could control the uniform diffusion of Co atoms which enables epitaxial growth of CoSi2.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.22.1-22.1
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• 2000

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.638-642
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• 2014

In this study, we investigate on the crystal microstructure and magneto-resistance (MR) change of Bismuth(Bi) thin films for annealing process, in order to apply Bi thin films to the spin electronic devices. As-prepared Bi thin films show the randomly oriented find grains whose size was measured to about 100 nm and the very low MR (4.7 % at room temperature) while careful annealing results in not only grain growth up to ${\sim}2{\mu}m$ but also drastic MR improvement (404 % at room temperature). The drastic change in the MR after applying the annealing process is attributed to the grain growth decreasing grain boundary scattering of electron. Therefore, in this study, we confirm the annealing effect for the grain boundary formation and MR improvement of Bi thin films, and demonstrate the feasibility of spin electronic devices.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.37-42
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• 2000

The comparative study of texture of Al/Ti thin films deposited on low-dielectric polymer and $SiO_2$substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and $SiO_2$by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and $SiO_2$substrates was characterized by cross-sectional transmission electron microscopy (TEM). Both the $\theta$-2$\theta$ method and rocking curve measurement suggest that Al/Ti thin films deposited on $SiO_2$have stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM revealed that grains of Ti films on $SiO_2$substrates had grown perpendicular to the substrate, while the grains of Ti alms on SiLK substrates were formed randomly. The lower degree of (111) texture of Al thin films on low-k polymer was due to Ti underlayer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.146-146
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• 2015

한국기초과학지원연구원(KBSI)에 설치되어 있는 SEM-EBSD 및 TKD와 NanoMEGAS 사의 TEM-ASTAR를 이용하여 마이크로미터에서 나노미터까지의 결정립방위와 상분석에 대한 연구를 수행하고 분석함으로써 제조공정에서의 오류 및 최적화된 공정조건을 제공한다.

• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.215-220
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• 1993

Microstructural dependence of magnetic property of RF/DC sputtered $Co_{69.0}Ni_{18.5}Cr_{12.5}/Cr$ double layer thin film was studied. Grain size was found to be decreased with substrate temperature in the range of $100-200^{\circ}C$ and Cr underlayer thickness(from $500\;{\AA}-2000\;{\AA}$). The peaks (200) and (1120) of X-ray diffraction patterns were evidently grown with the substrate temperature for the Cr underlayer and magnetic layer, respectively. The CoNiCr magnetic layer was found to be well epitaxialy grown on Cr underlayer, and subsequently the coercivity was enhanced.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.152-158
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• 2000

The crystallographic grain orientation of {{{{ { ZrB}_{2 } }}}}-ZrC composite sintered by pressureless a sintering(PLS) and spark plasma sintering (SPS) was analysed by the SEM-EBSP technique. In the case of PLS, (160) plane of {{{{ { ZrB}_{2 } }}}} was oriented to ND direction, (101) and (111) plane of ZrC were oriented to ND direction. In the case of SPS, (0001) plane of {{{{ { ZrB}_{2 } }}}} was strongly oriented to ND direction. Only (001) plane of ZrC was oriented to ND direction. The PLS specimen had weakly oriented grain structure and interface between {{{{ { ZrB}_{2 } }}}} and ZrC was found to be more stable than that of SPS but the SPS specimen had a preferentially oriented grain structure.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.336-343
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• 1993

The standard map for polyerystalline $YBa_2Cu_3O_7$-X was construeted and indexed from pressed tape sintered bulk and compressed bulk samples were drawn by the [001-110-110] stereographie quadrant map and by the ECPs from individual grains of the speeimens. The relationship between the (001) texture development and critical current density (Jc) for various samples was discussed. An (001) orintation was preferred in the pressed tape thickness was decreased. and in the compressed bulk as the compression strain was increaesed.The (001) orientation made a signifieant in crease on Jc. We conclded that an ECP technique was very useful for the analysis of the orientation distribution in small-sized $YBa_2Cu_3O_7$-X specimens such as superonducting tapes or thin films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.26-26
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• 2003

본 연구에서는 누적압연접합공정(ARB)을 통하여 5052 알루미늄 합금의 결정립을 약 0.2$\mu\textrm{m}$ 크기로 미세화 하였다. 누적압연에 의한 변형량 증가에 따른 미세 조직 변화와 결정립 간의 상대적인 방위각 차이를 TEM을 이용하여 관찰하였다. 누적 변형량을 함수로 상온 인장특성을 분석하였고, 초미세립 소재를 후속 열처리한 후 미세 조직 변화를 관찰하여 제조된 초미세립 소재의 열적 안정성을 평가하였다. 상온 대기 중에서 pin-on-disk 형태의 마멸시험기를 사용하여 초미세립 소재의 미끄럼 마멸시험을 변형량과 하중을 변수로 행하였다. 강소성 변형에 의해 제조된 5052 알루미늄 합금 소재의 마멸저항성은 강소성 변형 전과 비교하여 소재의 경도가 크게 증가하였음에도 불구하고 오히려 감소하였다. 마멸시험 후 마멸면의 SEM, 마멸단면의 OM 관찰과 마멸면 직하의 깊이에 따른 경도측정을 통하여 초미세립 소재의 마멸기구를 분석하였고 마멸표면의 변형 층을 관찰하였다. 또한 마멸면 직하 조직의 TEM 관찰을 통해서 마멸시험 중의 미세 조직 변화를 연구하였다.