• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.4
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• pp.365-371
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• 2014

A numerical simulation was conducted for the combustion chamber of a 4-step grate-firing boiler for wood pellet fuel. The flame is extended to the exit of combustion chamber, which is reproduced by present numerical method based on a homogeneous reaction model. Flow field from the simulation shows a strong recirculation flow at the upstream corner of the chamber, along which the flame is extended to the exit. These combustion and flow characteristics remain unchanged for partial load operations, which suggest modification of the combustion chamber structure rather than resizing should be effective to improve combustion characteristics. Possible modifications for combustion chamber are suggested such as relocating its exit, increasing the number of grate steps or installing internals such as guide baffles.

• Journal of Korean Society for Geospatial Information Science
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• v.19 no.3
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• pp.23-32
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• 2011

This research uses a distributed model, Vflo which can devide subwater shed into square grids and interpret diverse topographic elements which are obtained through GIS processing. To use the distributed model, soil wetness information was extracted through Tasseled Cap transformation from LANDSAT 7 $ETM^+$ satellite data and then they were applied to each cell of the test area, unlike previous studies in which have applied average soil condition of river basin uniformly regardless of space-difference in subwater shed. As a resut of the research, it was ascertained the spatial change of soil wetness is suited to the distributed model in a subwater shed. In addition, we derived out a relation between soil wetness of image collection time and 10 days-preceded rainfall and improved the feasibility of weights obtained by the relation equation.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.305-309
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• 1993

Thermal stability of Co/Cu artificial superlattice (AS) prepared by RF-magnetron sputtering and the effect of low temperature annealing on the magnetoresistance of the AS have been investigated in this work. Dependence of annealing behavior on the Cu spacer thickness, Fe underlayer thickness, and kind of the underlayer was examined and the relationship between the interfacial reaction and magnetoresistance was studied. It turned out that when Co/Cu AS was annealed at low temperature ($<450^{\circ}C$), the magnetoresistance could increase in the case of AS with thick spacer Cu ($20~25\AA$) layer, whereas it decreased in the case of AS with thin spacer Cu ($7\AA$) layer, which of the former is in contrast with previous reports and the latter in consistent with them. The increase of magnetoresistance is due to increase of interfacial atomic sharpness, which is supported by low angle X-ray diffraction analysis. The thermal stability of Co/Cu AS was better in the case of thick Fe underlayered AS. Interfacial reaction (separation of intermixed Co and Cu) could be observed at lower temperature for (200)-textured samples than for (111)-textured samples, which can be interpreted in terms of interdiffusion kinetics depending on the crystallographic orientation.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.103-103
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• 1999

CeO2 는 cubic 구조의 일종인 CeF2 구조를 가지며 격자 상수가 0.541nm로 Si의 격자 상수 0.543nm와 거의 비슷하여 Si과의 부정합도가 0.35%에 불과하여 CeO2를 Si 기판 위에 에피택셜하게 성장시킬 수 있는 가능성이 크다. 따라서 SOI(Silicon-On-Insulator) 구조의 실현을 위하여 Si 기판위에 CeO2를 에피택셜하게 성장시키려는 많은 노력이 있었다. 또한 CeO2 는 열 적으로 대단히 안정된 물질로서 금속/강유전체/반도체 전계효과 트랜지스터(MFSFET : metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이에 완충층으로 사용되어 강유전체의 구성 원자와 Si 원자들간의 상호 확산을 방지함으로써 경계면의 특성을 향상시기키 위해 사용된다. e-beam evaporation와 laser ablation에 의한 Si 기판 위의 CeO2 격자 성장에 관한 많은 보고서가 있다. 이 방법들은 대규모 생산 공정에서 사용하기 어려운 반면 RF-magnetron sputtering은 대규모 반도체 공정에 널리 쓰인다. Sputtering에 의한 Si 기판위의 CeO2 막의 성장에 관한 보고서의 수는 매우 적다. 이 논문에서는 Ce target을 사용한 reactive rf-magnetron sputtering에 의해 Si(100) 과 Si(111) 기판위에 성장된 CeO2 의 구조 및 전기적 특성을 보고하고자 한다. 주요한 증착 변수인 증착 power와 증착온도, Seed Layer Time이 성장막의 결정성에 미치는 영향을 XRD(X-Ray Diffractometry) 분석과 TED(Transmission Electron Diffration) 분석에 의해 연구하였고 CeO2 /Si 구조의 C-V(capacitance-voltage)특성을 분석함으로써 증차된 CeO2 막과 실리콘 기판과의 계면 특성을 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.

• Applied Microscopy
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• v.30 no.4
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• pp.337-345
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• 2000

Introduction of the buffer layer and the nitridation of a sapphire substrate were one of the most general methods employed for the reduction of lattice defects in GaN thin films Brown on sapphire by MOCVD. In an effort to improve the initial nucleation and growth condition of the GaN, reactive ion beam (RIB) of nitrogen treatment of the sapphire surface has been attempted. The 10 nm thick, amorphous $AlO_xN_y$ layer was formed by RIB and was partially crystallized alter the main growth of GaN at high temperature, leaving isolated amorphous regions at the interface. The beneficial effect of amorphous layer at interface in relieving the thermal stress between substrate and GaN film was examined by measuring the lattice strain value of the GaN film grown with and without the RIB treatment. Higher order Laue zone pattern (HOLZ) of $[\bar{2}201]$ zone axis was compared with simulated patterns and lattice strain was estimated It was confirmed that the great reduction of thermal strain was achieved by RIB process and the amount of thermal stress was 6 times higher in the GaN film grown by conventional method without the RIB treatment.

• Journal of Gastric Cancer
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• v.5 no.4 s.20
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• pp.260-265
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• 2005

Purpose: The protein kinase Chk1 is required for cell cycle arrest in response to DNA damage and is shown to play an important role in the G2/M checkpoint. The aim of this study was to investigate the relationship between microsatellite instability and frameshift mutation of the Chk1 gene in gastric cancers. Materials and Methods: The microsatellite instability was analyzed in 95 primary gastric carcinomas by using microdissection and 6 microsatellite markers. We also peformed single strand conformational polymorphism and sequencing to detect frameshift mutation of the Chk1 gene. Results: We found positive microsatellite instability in 19 (20%) of the 95 gastric cancers, 13 high- and 6 low-frequency microsatellite instability cases. The frameshift mutation of Chk1, which resulted in a truncated Chk1 protein, was detected in two high-frequency microsatellite instability cases. Conclusion: These data suggest that the microsatellite instability may contribute to the development of gastric carcinomas through inactivation of Chk1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.7-11
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• 2020

Carbon solubility on the paste deposition methods in the carbon-doped TiZrN coating was investigated in terms of lattice distortion and atomic concentration. After depositing the carbon paste by the dip coating, spin coating and screen printing, the laser was ablated to form the carbon gradient layer. Thickness and the concentration of doped carbon depended on the paste deposition method. Crystal structure analysis indicated that more lattice distortion occurred when coating layers were doped with spin coating and screen printing than when coating layers were doped with dip coating. The XPS depth profile showed that the thickness of carbon gradient layer by dip coating was about 30 nm, spin coating and screen printing are approximately 100 nm, formed more gradient layer. The hardness before laser carburization was about 30 GPa, and the hardness of 31 GPa with dip coating and 37 GPa with spin coating and screen printing. It was indicated that paste deposition methods for laser carburization contributed to lattice distortion and gradient layer.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.7-13
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• 2011

[ $L1_0$ ]phase FePd nano-dot structures were successfully fabricated on self-organized Fe/Au bilayers. With atomic force microscopy, it is determined that surface morphologies of initially flat Fe/Au bilayer films were agglomerated and transformed their shape into nano-dots structures with increasing annealing temperature. With this bilayer as a template, FePd multilayers were deposited at various temperatures, i.e. $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$, and $450^{\circ}C$. Surface morphologies of FePd superlattice had a near resemblance to self-organized bilayer. According to X-ray diffraction results, it is confirmed that $L1_0$ superlattice structures of FePd were obtained from samples which were annealed above $350^{\circ}C$. Results of X-ray photoelectron spectroscopy depth-profile analysis showed that chemical composition is identical to deposition sequence. As a result, without additional etching processes, fabrication of chemically ordered FePd superlattice nano-dots was achieved.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.81-92
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• 1990

We developed the technologies of wuperlattice and HEMT structures grown by MOCVD, and their characterization. In the case of GaAs/AlGaAs superlattice, the periodicity, interface abruptness and Al compositional uniformity were confirmed through the shallow angle lapping technique and double crystal x-ray measurement. Photoluminesence spectra due to quantum size effect of isolated quantum wells were also observed. The heterojunction abruptness was estimated to be within 1 monolayer fluctuation by the analysis of the relation between PL FWHM(Full Width at Half Maximum) and well width. HEMT structure was successfully grown by MOCVD. The 2 dimensional electron gas formation at heterointerface in HEMT structure were evidenced through the C-V profile, SdH (Shubnikov-de Haas)oscillation and low temperature Hall measurement. Low field mobility were as high as $69,000cm^2/v.sec$ for a sheet carrier density of $5.5{\times}10^{11}cm^-2$ at 15K, and $41,200cm^2/v.sec$ for a sheet carrier density of $6.6{\times}10^{11}cm^-2$ at 77K. In addition, well defined SdH oscillation and quantized Hall plateaues were observed.

• Polymer(Korea)
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• v.32 no.5
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• pp.489-496
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• 2008

The thermotropic liquid crystalline behavior of a homologous series of poly[1-{4-(4' nitrophenylazo) phenoxycarbonylalkanoyloxy}ethylene]s (NAPEn, n = $2{\sim}8$,10, the number of methylene units in the spacer) have been investigated. All of the homologues formed monotropic nematic phases. The glass transition temperatures decreased with n. This is attributed to a plasticization of the backbone by the side chains. The isotropic-nematic phase transition temperatures decreased with increasing n up to 7 and showed the odd-even effect. However it became almost constant when n is more than 7. This behavior was rationalized in terms of the change in the average shape of the side chain on varing the parity of the spacer. This rationalization also accounts for the observed variation of the entropic gain for the clearing transition. The mesophase properties of NAPEn were entirely different from those reported for the polymers in which the azobenzene groups are attached to polyacrylate, polymathacrylate, and polystyrene backbones through polymethylene spacers. The results indicate that the mode of chemical linkage of the side group with the main chain plays an important role in the formation, stabilization, and type of mesophase.