• Title/Summary/Keyword: 게이트 단자전압

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Design and Fabrication of a GaAs MESFET MMIC Transmitter for 2.4 GHz Wireless Local Loop Handset (2.4 GHz WLL 단말기용 GaAs MESFET MMIC 송신기 설계 및 제작)

  • 성진봉;홍성용;김민건;김해천;임종원;이재진
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.1
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    • pp.84-92
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    • 2000
  • A GaAs MESFET MMIC transmitter for 2.4 GHz wireless local loop handset is designed and fabricated. The transmitter consists of a double balanced active mixer and a two stage driver amplifier with voltage negative feedback. In particular, a pair of CS-CG(common source-common gate) structure compensates the reduction in dynamic range caused by unbalanced complementary IF input signals. And to suppress the leakage local power at RF port, the mixer is designed by using phase characteristic between the ports of MESFET. At the bias condition of 2.7 V and 55.2 mA, the fabricated MMIC transmitter with chip dimensions of $0.75\times1.75 mm^2$ obtains a measured conversion gain of 38.6 dB, output $P_{idB}$ of 11.6 dBm, and IMD3 at -5 dBm RF output power of -31.3 dBc. This transmitter is well suited for WLL handset.

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