• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.10
• /
• pp.17-22
• /
• 2004

We developed a new ANGLED display driving method which used both amplitude and pulse width modulation. For pulse width modulation, we divided a picture frame time into S sub-frames. For amplitude modulation, we used three OLED luminance(or current) levels which were controlled by TFT's gate voltages. By combining these two modulation methods, we obtained 35(=243) grey levels. And we designed a new data electrode driving circuit block with two shift registers without using DAC's. To verify the feasibility, we simulated the key circuit components by HSpice with TFT parameters extracted from current-voltage characteristics of 6${\mu}{\textrm}{m}$ channel length polysilicon TFT's. From the simulation results, we found that 320${\times}$240, dual scan, 243 grey level AMOLED display can be designed with this method.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.13 no.2
• /
• pp.135-144
• /
• 2008

A bootstrap circuit is widely used for the floating gate power supply of Intelligent power module (IPM). A bootstrap circuit is simple and inexpensive. However, the duty cycle and on-time are limited by the requirement to refresh the charge in the bootstrap capacitor. And the value of the bootstrap capacitor should be increased as the switching frequency decreases. A charge pump circuit can be used to overcome the problems. This paper deals with an analysis and design of a charge pump circuit for the floating gate power supply of an IPM. The simulation and experiment are carried out for an induction motor drive system. The results well verifies the validity of the proposed circuit and design method.

• Journal of IKEEE
• /
• v.24 no.1
• /
• pp.132-139
• /
• 2020

The ionizer module used in this air cleaner supplies high voltages of 3.5KV / -4KV to the discharge electrode HV+ / HV- using a winding transformer to generate positive and negative ions by electric field radiation of carbon fiber brush. The ionizer module circuit using the existing MCU has the disadvantage of large PCB size and expensive price, and the gate driver chip using the existing ring oscillator has oscillation period sensitive to PVT (Process-Voltage-Temperature) fluctuation and there is risk of fire or electric shock because there is no fault detection function by short circuit of HV+ and GND as well as HV- and GND. Therefore, in this paper, even though PVT fluctuates, by using 7-bit binary up counter, HV+ voltage reaches the target voltage by adjusting oscillation period. And an HV+ short fault detection circuit for detecting a short circuit between HV+ and GND, an HV- short fault detection circuit for detecting a short circuit between HV- and GND, and an OVP (Over-Voltage Protection) for detecting that HV+ rises above an overvoltage are newly proposed.

• Journal of Industrial Technology
• /
• v.27 no.B
• /
• pp.15-20
• /
• 2007

This paper presents the new design method for the gate driver circuit of the floating MOSFET by using the pulse transformer. Each parameters of the proposed circuit are delivered by the numerical calculation method. By considering inner characteristics of MOSFET, the gate driver makes to increase the efficiency of the power conversion and decrease operating heat. Computer simulations and to experimental results for a Buck Converter are presented in order to validate the proposed method.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.6
• /
• pp.10-15
• /
• 2008

In this paper, a new NMOS gate cross-connected current-mirror type bridge rectifier for UHF RFID applications is presented. The DC converting characteristics of the proposed rectifier are analyzed with the high frequency equivalent circuit and the gate capacitance reduction technique for reducing the gate leakage current due to the increasing of operating frequency is also proposed theoretically by circuitry method. As the results, the proposed rectifier shows nearly same DC output voltages as the existing NMOS gate cross-connected rectifier, but it shows the gate leakage current reduced to less than 1/4 and the power consumption reduced more than 30% at the load resistor, and it shows more stable DC supply voltages for the valiance of load resistance. In addition, the proposed rectifier shows high enough and well-rectified DC voltages for the frequency range of 13.56MHz HF(for ISO 18000-3), 915MHz UHF(for ISO 18000-6), and 2.45 GHz microwave(for ISO 18000-4). Therefore, the proposed rectifier can be used as a general purpose one to drive RFID transponder chips on various RFID systems which use specified frequencies.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2014.05a
• /
• pp.686-689
• /
• 2014

This Paper is about the study that use the IPM(Intelligent Power Module) which is a integrated switching module to drive inverter gates for driving of a multi-pole BLDC(Brushless Direct Current) motors. When designing a inverter using the various manufacturers IPM, it suggests a electronic circuit system to evaluate the electrical and logical characteristics of the IPM with various brands.

• Proceedings of the KIPE Conference
• /
• 2016.07a
• /
• pp.299-300
• /
• 2016

본 논문은 낮고 넓은 입력 및 높은 출력 전류를 가지는 어플리케이션에 적합한 새로운 인터리브드 액티브 클램프 포워드 컨버터를 제안한다. 컨버터는 직렬로 연결된 2차측 추가 권선을 이용하여 0.5이상의 시비율로 동작할 수 있으며, 추가 플로팅 게이트 구동회로 없이 2차측 동기 정류기를 구동할 수 있다. 제안된 회로의 유효성은 36-72V 입력 12V/500W 시제품을 통해 검증하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.7
• /
• pp.23-31
• /
• 2008

Experiment results are presented for gate oxide degradation under the constant voltage stress conditions using MOSFETs with 3-nm-thick gate oxides that are treated by deuterium gas. Two kinds of methods, annealing and implantation, are suggested for the effective deuterium incorporation. Annealing process was rather difficult to control the concentration of deuterium. Because the excess deuterium in gate oxide could be a precursor for the wear-out of gate oxide film, we found annealing process did not show improved characteristics in device reliability, compared to conventional process. However, deuterium implantation at the back-end process was effective method for the deuterated gate oxide. Device parameter variations as well as the gate leakage current depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to those of conventional process. Especially, we found that PMOSFET experienced the high voltage stress shows a giant isotope effect. This is likely because the reaction between "hot" hole and deuterium is involved in the generation of oxide trap.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.38 no.5
• /
• pp.70-78
• /
• 2001

We have developed a novel driving system of 5' true color FED using voltage controlled PWM method which has current control effect. The proposed method has the advantage of voltage controlled pulse width modulation method and current control method. Also, we propose a new circuit model of FED subpixel for circuit simulation of FED driving circuits, considering some parasitic effects, i.e., cross talk, line coupling effect and leakage current to the adjacent cathode lines. Output stage of the data driving circuit is optimized using the proposed circuit model. In video data processing, FED controller uses the parallel processing of R.G.B input data, so duty ratio is maximized and brightness of FED increases. With this results, no noise and high quality performance is achieved in display of 5' true color FED.

• Journal of the Korean Society for Railway
• /
• v.20 no.3
• /
• pp.339-348
• /
• 2017

Power supply for railway cars can be divided into propulsion system power supply and auxiliary power units (APU). The propulsion system power supply is for propulsion of railway cars, and regenerative braking; the APU provides power for the air compressor, lighting, car control and other auxiliary parts. According to high voltage and high current specifications, generally, an insulated-gate bipolar transistor (IGBT) is adopted for the switching component. For appropriate switching operation, a gate driver unit (GDU) is essentially required. In this paper, the technical trends of GDU for railway cars are analyzed and a design consideration for IGBT GDU is described.