• 한국표면공학회지
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• 제42권6호
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• pp.251-255
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• 2009

In this study, the plasma etching of the TaN thin film with $O_2/BCl_3$/Ar gas chemistries was investigated. The equipment for the etching was an inductively coupled plasma (ICP) system. The etch rate of the TaN thin film and the selectivity of TaN to $SiO_2$ and PR was studied as a function of the process parameters, including the amount of $O_2$ added, an RF power, a DC-bias voltage and the process pressure. When the gas mixing ratio was $O_2$(3 sccm)/$BCl_3$(6 sccm)/Ar(14 sccm), with the other conditions fixed, the highest etch rate was obtained. As the RF power and the dc-bias voltage were increased, the etch rate of the TaN thin film was increased. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical states of the surface of the TaN thin film.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권4호
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• pp.203-209
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• 2000

This paper proposes the improvement of the etch rate of GaN using a magnetized inductively coupled $CH_4/H_2/Ar$plasma. The gradient magnetic field with the axial direction is investigated using Gauss-meter and the ion current density is measured using double Langmuir probe. The applied magnetic field changes the ion current density profile in the radial direction, resulting in producing the higher density in the outer region than in the center. GaN dry etching process is carried out based on the measurements of the ion current density. The each rate of 2000 /min is achieved with $CH_4/H_2/Ar$ chemistries at 800 W input power, 250W rf bias power, 10 mTorr pressure and 100 gauss magnetic field.

• 한국소음진동공학회논문집
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• 제16권12호
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• pp.1272-1278
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• 2006

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin(Au/Sn) eutectic solder bonding. The membrane chip has $2.5mm{\times}2.5mm$, 0.5${\mu}m$ thick low stress silicon nitride membrane, $2mm{\times}2mm$ Au/Ni/Cr membrane electrode, and 3${\mu}m$ thick Au/Sn layer. The backplate chip has $2mm{\times}2mm$, 150${\mu}m$ thick single crystal silicon rigid backplate, $1.8mm{\times}1.8mm$ backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50{\sim}60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is 39.8 ${\mu}V/Pa$(-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.84-87
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• 2001

In this study, $CeO_2$ thin films were etched with a $CF_4/Ar$ gas combination in inductively coupled plasma (ICP), The maximum etch rate of $CeO_2$ thin films is $270{\AA}/min$under $CF_4/(CF_4+Ar)$ of 0.2, 600 W/-200 V, 15 mTorr, and $25^{\circ}C$. The selectivities of $CeO_2$ to PR and SBT are 0.21, 0.25. respectively. The surface reaction of the etched $CeO_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F, Compounds such as $Ce-F_x$ are remains on the surface of $CeO_2$ thin films. Those products can be removed by Ar ion bombardment effect, The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of $Ce-F_x$ thin films. The etch profile of over-etched $CeO_2$ films with the $0.5 {\mu}m$ line was approximately $65^{\circ}$.

• 한국진공학회지
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• 제8권4B호
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• pp.541-547
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• 1999

Reactive ion etching process for InP using BCl3/O2/Ar high density inductively coupled plasma was investigated. The experimental design method proposed by the Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power and the chamber pressure were the two dominant parameters affectsing etch results. It was also observed that the etch rate decreased and the surface roughness improved as the ICP power and the bias voltage increased and as the chamber pressure decreased. The Addition of oxygen to the gas mixture drastically improved surface roughness by suppressing the formation of the surface reaction product. The optimum condition was ICP power 600W, bias voltage -100V, 10% $O_2$, 6mTorr, and $180^{\circ}C$, resulting in about 0.15$\mu\textrm{m}$ etch rate with smooth surfaces and vertical mesa sidewalls Also, the maximum etch rate of abut 4.5 $\mu\textrm{m}$/min was obtained at the condition of ICP power 800W, bias voltage -150V, 15% $O_2$, 8mTorr and $160^{\circ}C$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.451-455
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• 1999

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and higher etch slope as about 60$^{\circ}$was observed and the selectivity to oxide increased to 2.4 without decreasing of the etch rate $1500{\AA}$/min. XPS surface analysis proved that a only little $O_2$ gas removes the Pt-CI compounds as residues on the etched surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.279-281
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• 1997

The properties of Platinum dry etching were investigated in MICP(Magnetized Inductively Coupled Plasma). The problem with Platinum etching is the redeposition of sputtered Platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned Platinum structure produce feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape.[1] Generally, $Cl_2$ plasma is used for the fence-free etching.[1][2][3] The main object of this study was to investigate a new process technology for the fence-free Pt etching. Platinum was etched with Ar plasma at the cryogenic temperature and with Ar/$SF_6$ plasma at room temperature. In cryogenic etching, the height of fence was reduced to 20% at $-190^{\circ}C$ compared with that of room temp., but the etch profile was not fence-free. In Ar/$SF_6$ Plasma, chemical reaction took part in etching process. The trend of properties of Ar/$SF_6$ Plasma etching is similar to that of $Cl_2$ Plasma etching. Fence-free etching was possible, but PR selectivity was very low. A new gas chemistry for fence-free Platinum etching was proposed in this study.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1470-1471
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• 2008

We present a front-side micromachined thermopile with high sensitivity in the 3-5${\mu}m$ window, and discuss its application to a novel non-dispersive infrared (NDIR) $CO_2$ gas sensor with a light source emitting collimated light. The micromachined thermopile shows a measured sensitivity of 30 mV/W and a $D^*$ of $0.3{\times}10^8cm^{\surd}Hz/W$. Using this newly fabricated thermopile, we also have successfully developed a small, sensitive NDIR $CO_2$ detector module for accurate air quality monitoring systems in energy-saving building and automotive applications. The novel sample cavity comprising specular reflectors around the light bulb is configured to uniformly emit collimated light into the entrance aperture of the cavity in order to enhance the sensitivity of NDIR $CO_2$ detector.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.251.1-251.1
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• 2014

Oraganic Light Emitting Diodes (OLED) 소자의 광추출 효율을 향상시키기 위한 방안으로 나노급 사이즈의 고 굴절률 패턴을 기판의 내부 패턴에 적용하였다. 100 nm 및 300 nm의 직경을 갖는 Si3N4 나노 패턴을 나노 임프린트 리소그래피와 건식 식각 공정을 통하여 OLED의 유리기판에 형성을 하였다. 그리고 Silicon On Glass (SOG) 물질을 패턴이 전사된 기판에 스핀 코팅으로 평탄화 공정을 진행 함으로써 OLED소자의 전기적인 특성이 떨어지는 문제점을 개선하였다. 그러고 나서 Si3N4 나노 패턴이 형성되고 평탄화 공정을 마친 기판상 OLED 소자를 제작하였다. OLED의 발광층에서 발생한 빛은 Si3N4 나노패턴에 의해 산란되어 광 추출 효율을 개선할 수 있다. 본 연구에서 두 가지 종류 100nm, 300nm 높이의 Si3N4 나노패턴으로 높이에 따른 광 추출 효율을 비교하고자 OLED 소자를 제작하였다. 기판에 Si3N4 패턴이 형성된 OLED의 효율은 Si3N4 300nm에서 13.1% 증가하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.414-414
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• 2014

박막 태양전지의 광흡수를 증가시키기 위한 방법으로 나노 사이즈의 구조체를 이용하는 방법들이 주목받고 있다. 나노 구조체로 인한 광 산란 효과는 광 흡수층에서 빛의 흡수를 높여 태양전지의 변환효율을 높일 수 있다. 3차원 구조체를 제작하는 기존의 방법들은 대면적 기판에 적용이 어렵고, 비용적 측면 등의 문제점들이 있다. 본 연구에서는 대면적화가 가능한 나노 임프린트 리소그래피 방법을 이용하여 Ag nano rod 패턴을 제작하였다. 임프린트 공정 중 UV 조사시간, 가해지는 하중, 기판온도 등의 변수들과, 건식 이온 식각 시 변수들을 조절하여 최적화된 3차원 rod 패턴을 형성할 수 있었다. 그림 1은 형성된 Ag rod 패턴의 SEM 측정 사진이다. 전극 폭 300 nm, 간격 300 nm로 제조된 rod는 Ag의 두께를 조절함으로써 전기, 광학적 특성을 조절할 수 있었다. 3차원 Ag nano rod를 박막 태양전지의 전, 후면 전극으로 사용하여 태양전지의 특성변화를 분석하였다.