• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.334-334
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• 2009

본 논문에서는 질화갈륨 (GaN) 표면에 나노-스피어 리소그라피를 가능하게 하기 위하여 친수성으로 개질을 시도하였다. 플라즈마 처리 공정 변수인 공정 파워, 처리시간을 변화시키면서 표면을 개질하였으며, 친수성 개질을 확인하기 위하여 접촉각 및 표면 자유 에너지 변화를 측정 계산하였다. 또한 FT-IR 분석을 통하여 표면 작용기를 확인하였다. 최종적으로 본 실험의 결과로 얻어진 친수성이 질화갈륨 표면의 나노-스피어 리소그라피에 얼마나 큰 영향을 주는지 표면 모폴리지를 SEM을 이용하여 관찰하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.38-38
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• 2008

질화갈륨계 발광다이오드는 차세대 반도체 조명용 및 기타 광전소자 등에의 응용 가능성 때문에 주목을 받고 있다. 본 발표에서는 발광다이오드용 In/ITO 전극이 p-형 질화갈륨과 열처리 후 오믹접촉을 이루는 메커니즘을 설명한다.

• Proceedings of the KAIS Fall Conference
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• 2007.11a
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• pp.71-73
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• 2007

본 논문은 질화갈륨 전력 소자를 이용한 이동통신 중계기 및 기지국용 전력증폭기 모듈의 설계에 대하여 기술하고 있다. 전력 버짓 분석을 통하여 전치증폭기와 구동증폭기, 그리고 최종단 고출력증폭기의 전력 용량을 계산하였고, 여기에 적합한 질화갈륨 소자를 선택하였다. 최종 개발에 앞선 초기버젼의 전력증폭기를 구성하여 1-tone과 2-tone에 대하여 전력특성을 측정해 보았다.

• Ceramist
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• v.16 no.2
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• pp.78-86
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• 2013

• Ceramist
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• v.14 no.5
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• pp.35-42
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• 2011

• Analytical Science and Technology
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• v.6 no.1
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• pp.131-139
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• 1993

The separation of gallium and indium from the matrix elements such as zinc and other ions, especially form Fe(III) ion was studied for the determination of trace level of them in zinc ores and zinc blendes by inductively coupled plasma atomic emission spectrometry(ICP-AES). Gallium and indium were extracted from the sample solution with a solvent of tributyl phosphate(TBP). The type and concentration of acid, interferences of other ions, the ratio of aqueous phase to organic phase, TBP concentration, sripping efficiency were optimized for the effective extraction. Gallium and indium were separated from other ions in the 5N hydrochloric acid solution of the samples by the extraction with 100% TBP. In this time, Fe(III) was reduced to Fe(II) with hydroxylamine hydrochloride to prevent its coextraction prior to the main extraxtion. After stripped from organic phase by the back-extraction with 0.02N HCl, they were determined in the aqueous phase by ICP-AES. This method was known to be quantitative from the overall extraction of more than 95%.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.8 no.6
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• pp.35-40
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• 2008

High performance light emitting diodes(LEDs) have been developed using GaN-based materials grown on sapphire substrates in recent years. Although these LEDs are already commercially available, we have to consider electrostatic discharge(ESD) damage related to both basic materials of diode and miniaturization of LEDs. ESD damage is one of the important parameters influencing reliability of the light emitting devices. We investigated mass production of GaN-based LEDs suffered from ESD during production process and present the solutions in order to improve the ESD problem. Most of EDS problems were controlled by using instruments properly and improvement of the process circumstances as well.

• Proceedings of the KAIS Fall Conference
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• 2010.11a
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• pp.76-79
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• 2010

본 논문에서는 고 효율 및 고 출력 특성을 가지는 질화갈륨(GaN) 소자를 이용하여 WiMAX 및 LTE System에 사용될 수 있는 DPD용 Pallet Amplifier를 제작하였다. 제작된 Pallet Amplifier는 Pre-drive로써 저 전류의 MMIC를 채택하고, Drive 단과 Main 단에 15W 급과 30W 급의 질화갈륨 소자를 사용 하였으며, 추가적인 효율 개선을 위해 PCB상에 Doherty Structure를 적용함으로써 보다 높은 효율을 구현하였다. 제작된 Pallet Amplifier는 음 전원 Bias 제어 회로, 온도에 따른 Gain 보상회로, Sequence 회로 및 Main 전원 Drop에 따른 보호 회로를 구현하였다. WiMAX Signal을 이용한 Modulation Power 10Watt Test에서 약 36.8~38.3%의 Pallet 효율과 DPD Solution인 TI GC5325SEK DPD Board 사용 시 ACLR은 약 46dBc 이상을 가지는 것으로 측정되었다. 본 논문에서 제작된 Pallet Amplifier는 Upper Band와 Lower Band로 나누어 제작되었던 기존 Pallet Amplifier와 달리 하나의 Pallet Amplifier로 2496~2690MHz에서 모두 사용하면서 종전에 사용되고 있는 Pallet Amplifier에 비해 Size가 최소 10% 이상 축소되어 효율 및 크기 면에서 종전 Pallet Amplifier보다 큰 이점을 갖는다.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.182-188
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• 2004

Previous studies on the liquid Gallium ion sources used an electro-chemically etched tungsten wire with a coil-type heater. Such a structure requires excessive power consumption in the course of heating the liquid metal. In this work, a new structure is proposed that replaces the coil-type heater. It uses a Gallium reservoir made of six pre-etched 250$\mu\textrm{m}$ tungsten wires that surround the needle electrode. Gallium trading at the reservoir is observed to be much more stable, resulting in an improved beam stability.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.19-31
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• 1996

To invetigate the impurity distribution in GaAs crystal grown by horizontal Bridgman method, we constructd the mathematical model describing heat transfer, mass transfer and fluid flow n transient growth of GaAs. Galerkin finite element method and implicit time integration were used to solve the equations and simulate the transient growth. The concentration distribution is similar to the case of diffusion controlled growth when Gr - 0. With the increase of Gr the concentration profile is distroted and the minimum solute concentration appears near the interface. As solidification prosceeds, interface deflection increases steadily and transverse segregation increases until mixing by flow becomes steady. The axial segregation increases with solidification. But, with high intensity of flow axial segregation becomes steady after short transient. At small and large Gr the result showed a good agreememt with the prediction Smith and Scheil.