• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2008년도 추계학술대회 초록집
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• pp.40-40
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• 2008

질화갈륨계 발광다이오드는 차세대 반도체 조명용 및 기타 광전소자 등에의 응용 가능성 때문에 주목을 받고 있다. 본 발표에서는 발광다이오드용 In/ITO 전극이 p-형 질화갈륨과 열처리 후 오믹접촉을 이루는 메커니즘을 설명한다.

• Journal of Aerospace System Engineering
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• 제16권5호
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• pp.57-61
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• 2022

The various GaAs panel are applied widening for aircraft and aerospace structures. This study presented technology for the growth of large-diameter GaAs ingots greater than 4 inches through numerical analysis using temperature control technology. In this work, proposes manufacturing technology adapted to various temperature and environmental changes through temperature simulation. With the development of ingot technology, the possibility of future application increased by obtaining expected results with minor deviation.

• Journal of the Korean Chemical Society
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• 제24권4호
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• pp.302-309
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• 1980

The solubilities of n-propyl bromide in nitrobenzene and in 1,2,4-trichlorobenzene have been measured at 19, 25 and $40^{\circ}C$ in the presence and absence of gallium bromide. When gallium bromide does not exist in the system, the solubility of n-propyl bromide in nitrobenzene is greater than in 1,2,4-trichlorobenzene, indicating a stronger interaction of n-propyl bromide with nitrobenzene than with 1,2,4-trichlorobenzene. In the presence of gallium bromide, 1: 1 complex $n-C_3H_7Br\cdotGaBr_3$ is formed in the solution. The instability constant K of the complex was evaluated. $$n-C_3H_7Br\cdotGaBr_3 \rightleftarrows n-C_3H_7Br ＋ \frac{1}{2Ga_2Br_6 }$$The change of enthalpy, free energy and entropy for the dissociation of the complex were also calculated. It seems that the stabilities of the complex, gallium bromide with alkyl bromide, are relatively concerned with the stabilities of the alkyl ion.

• Resources Recycling
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• 제14권2호
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• pp.28-32
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• 2005

By using thermal decomposition method, the preliminary experiments for recovery of metallic Ga from GaAs scraps produced in the manufacturing of compound semiconductors were carried out in laboratory(200 g/batch) scales. From these results, decomposition appratus with packed tower was constructed in commercial scale(30 kg/batch). The decomposition rate of GaAs increased with raising decomposition temperature, but the yield of Ga decreased over 1000$^{\circ}C. As a result, the optimum decomposition temperature was 1000~1050$^{\circ}C when the pressure of decomposition reactor was 2~2.5${\times}10^{-2} mmHg, and the yield of Ga was about 89 wt.%. The commercial decomposition apparatus was designed with packed tower because the partial pressure of As in vapor state was not reduced even if the temperature of As vapor was decreased. The recovery yield of Ga from GaAs scraps in large scale experiment showed 99%.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.345-345
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• 2014

최근 디스플레이 기술은 급속도로 발전해 가고 있다. 정보화 기술의 발전으로 언제 어디서나 쉽게 정보를 얻을 수 있는 유비쿼터스 시대로 접근하고 있으며, 휴대가 간편하고 이동성을 가진 휴대용 기기가 인기를 끌고 있다. 이에 따라 더 얇고 더 가벼우며 휴대하기 쉬운 디스플레이가 요구 되고 있고, 더 나아가 떨어뜨려도 깨지지 않고 유연하며, 디자인 변형이 자유로우며, 때론 종이처럼 접거나 휘어지거나 두루마리처럼 말을 수 있는 이른바 "플렉서블 디스플레이"에 대한 필요성이 점점 대두되고 있다. 이러한 첨단 디스플레이의 핵심 소자 중 하나는 산화물 박막 트랜지스터 이다. 산화물 반도체는 넓은 밴드갭을 가지고 가시광선 영역에서 투명하며, 높은 이동도를 가지고 있어 차세대 평판디스플레이, 투명디스플레이 및 플렉서블 디스플레이용 박막트랜지스터(TFT)를 위한 채널층으로써 광범위하게 연구되고 있다. 하지만 현재 대부분의 산화물 박막 트랜지스터 제조 공정은 고온에서의 열처리를 필요로 한다. 고온에서의 열처리 공정은 산화물 박막의 제조 공정 단가를 증가시키는 문제점이 있으며, 산화물 박막이 형성되는 기판의 녹는점이 낮은 경우에는 상기 기판의 변형을 가져오므로(예를 들면, 플라스틱 기판, 섬유 기재 등), 상기 산화물 박막이 적용되는 기판의 종류에 제한이 생기는 문제점이 있었다. 이에 플렉시블 디스플레이 등을 위해서는 저온공정이 필수로 선행 되어야 한다. 산화물 TFT는 당초, ZnO계의 재료가 연구되었지만 2004년 말에 Hosono 그룹이 Nature지에 "IGZO (In, Ga, Zn, O)"을 사용한 TFT를 보고한 이후 IGZO, IZO, ISZO, IYZO, HIZO와 같은 투명 산화물반도체가 TFT의 채널물질로써 많이 거론되고 있다. 그 중에서 인듐갈륨 산화물(IGO)는 삼성분계 n-형 산화물 반도체이고, 채널 이동성이 좋고 광투과도가 우수해 투명 TFT에 매우 유용하게 사용할 수 있다. 이 실험에서 우리는 인듐갈륨 산화물 박막 및 트랜지스터 특성 연구를 진행하였다. 인듐갈륨 산화물 박막은 상온에서 rf-magnetron sputtering법을 사용하여 산소분압 1~10%에서 증착 되었다. 증착된 인듐갈륨 산화물 박막은 cubic $In_2O_3$ 다결정으로 나타났으며, 2차상은 관찰 되지 않았다. 산소분압이 10%에서 1%로 변함에 따라 박막의 전도도는 $2.65{\times}10^{-6}S/cm$에서 5.38S/cm 범위에서 조절되었으며, 이를 바탕으로 인듐갈륨 박막을 active층으로 사용하는 bottom gate 구조의 박막트랜지스터를 제작 하였다. 인듐갈륨산화물 박막트랜지스터는 산소분압 10%에서 on/off 비 ${\sim}10^8$, field-effect mobility $24cm^2/V{\cdot}S$를 나타내며 상온에서 플렉서블용 고 이동도 소자 제작의 가능성을 보여준다.

• Resources Recycling
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• 제29권1호
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• pp.81-88
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• 2020

Recovery of gallium and indium from waste light emitting diodes has been emphasized gradually owing to high content of gallium and indium. This study was established the recovery of gallium (Ga³⁺) and indium (In³⁺) from waste gallium nitride was contained in waste light-emitting diodes. The procedure was divided into the following steps; characteristic analysis, alkaline roasting, and leaching. In characteristic analysis part, the results were used as a theoretical basis for the acid leaching part, and the chemical composition of waste light emitting diodes is 70.32% Ga, 5.31% Si, 2.27% Al and 2.07% In. Secondly, with reduction of non-metallic components by alkaline roasting, gallium nitride was reacted into sodium gallium oxide, in this section, the optimal condition of alkaline roasting is that the furnace was soaked at 900℃ for 3 hours with mixing Na₂CO₃. Next, leaching of waste light emitting diodes was extremely important in the process of recovery of gallium and indium. The result of leaching efficiency was investigated on the optimal condition accounting for the acid agent, concentration of acid, the ratio of liquid and solid, and reaction time. The optimal condition of leaching procedures was carried out for 2.0M of HCl liquid-solid mass ratio of 30 ml/g in 32minutes at 25℃ and about 96.88% Ga and 96.61% In were leached.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.349-349
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• 2007

• Journal of the Korean Vacuum Society
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• 제15권2호
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• pp.168-172
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• 2006

GaN nucleation layers were grown by hydride vapor phase epitaxy (HVPE) and the effect of growth temperature on the structural properties of GaN nucleation layers for nanorods was investigated by synchrotron x-ray scattering and Atomic Force Microscopy (AFM). For the samples grown at different temperatures, two-component rocking profiles of (002) GaN Bragg peaks for the GaN nucleation layers were observed with one very sharp and the other broad. It was shown that the two-component rocking profile could be qualitatively explained by surface morphology, which was in good agreement with AFM result, from which we could conclude that relatively low temperature is favorable for GaN nanorods formation.

• Journal of the Korean Chemical Society
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• 제15권5호
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• pp.228-235
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• 1971

The solubilities of n-butyl bromide in nitrobenzene and in 1,2,4-trichlorobenzene have been measured at $19^{\circ},\;25^{\circ},\;and\;40^{\circ}C$ in the presence and absence of gallium bromide. When gallium bromide does not exist in the system, the solubility of n-butyl bromide in nitrobenzene is greater than in 1,2,4-trichlorobenzene, indicating a stronger interaction of n-butyl bromide with nitrobenzene than with 1,2,4-trichlorobenzene. In the presence of gallium bromide, complex of n-butyl bromide with gallium bromide, 1:1 complex, $n-C_4H_9Br{\cdot}GaBr_3$, is formed in the solution. The instability constant K of the complex was evaluated. $n-C_4H_9Br{\cdot}GaBr_3{\rightleftharpoons}n-C_4H_9Br+\frac{1}{2}Ga_2Br_6$ The changes of enthalpy, free energy and entropy for the dissociation of the complex were also calculated.

• Journal of the Korean Chemical Society
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• 제29권1호
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• pp.9-14
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• 1985

The solubilities of i-propyl bromide in nitrobenzene have been measured at 10$^{\circ}$, 19$^{\circ}$ and 25$^{\circ}C$ in the presence and absence of gallium bromide. In the presence of gallium bromide, 1 : 1 complex, i-C$_3$H$_7Br{\cdot}GaBr_3$ is formed in the solution. The instability constant K of the complex formation was evaluated from the following equilibrium equation: i-C$_3$H$_7Br{\cdot}GaBr_3$ ${\rightleftharpoons}$ i-C$_3$H$_7$Br + $\frac{1}{2}$$Ga_2Br_6$. The change of enthalpy, free energy and entropy for the dissociation of the complex were also calculated. From these result, it seems that the stabilities of the complex formation, gallium bromide with alkyl bromide, are directly related with those of the carbonium ions of alkyl bromide.