• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.762-765
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• 2013

This paper analyzed the change of subthreshold current for gate oxide thickness of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for gate oxide thickness, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and gate oxide thickness for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.768-771
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• 2013

This paper analyzed the change of subthreshold current for channel doping concentration of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for channel doping concentration, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. As a result, we know the subthreshold current was influenced on parameters of Gaussian function and channel doping concentration for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.425-430
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• 2014

This paper analyzed the change of subthreshold current for gate oxide thickness of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for gate oxide thickness, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, analytical model showed that subthreshold current was influenced by parameters of Gaussian function and gate oxide thickness of DGMOSFET.

• Journal of Korean Ophthalmic Optics Society
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• v.10 no.4
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• pp.347-355
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• 2005

We investigate the distribution of central spot and the encircled energy in order to assess the performance of central obstructed optical system having central obstruction, when the central obstruction and the degree of truncated Gaussian amplitude of incident beam change. When the radius of central obstruction increases the radius of central spot on the image plane decreases, and when the degree of truncated Gaussian amplitude of incident beam increases the radius of central spot on the image plane increases. As the central obstruction and the degree of truncated Gaussian amplitude of incident beam increase, the depth of focus increases and the encircled energy of central spot decreases. We know from theses results that the effect of Gaussian factor is small as the central obstruction increases. These results was applied to develope the large optical reflection system.

• Proceedings of the KIEE Conference
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• 2008.04a
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• pp.89-90
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• 2008

AWGN(Addictive white gaussian noise)에 의해 영상은 자주 훼손되곤 한다. 최근 이를 복원하기위해 웨이블릿(Wavelet) 영역에서의 베이시안(Bayesian) 추정법이 연구되고 있다. 웨이블릿 변환된 영상 신호의 밀도 함수(pdf)는 표족한 첨두와 긴 꼬리(long-tail)를 갖는 경망이 있다. 이러한 사전 밀도 함수(a priori probability density function)를 상황에 적합하게 추정한다면 좋은 성능의 복원 결과를 얻을 수 있다. 빈번이 제안되는 릴도 함수로 가우시안(Gaussian) 분포 참수와 라플라스(Laplace) 분포 함수가 있다. 이들 각각의 모델은 훌륭히 변환 계수들을 모델링하며 나름대로의 장점을 나타낸다. 본 연구에서는 가우시안 분포와 라플라스(Laplace) 분포의 혼합 분포 모델을 밀도 함수로 제안하여, 이 들의 장점을 종합하였다. 이를 MAP(Maximum a Posteriori) 추정 방법에 적용하여 잡음을 제거 하였다. 그 결과 기존의 알고리즘에 비해 시각적인 면(Visual aspect), 수치적인 면(PSNR), 그리고 연산량(Complexity) 측면에서 망상된 결과를 얻었다.

• Journal of Internet Computing and Services
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• v.13 no.3
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• pp.61-73
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• 2012

This paper proposes a histogram specification based image enhancement method, which uses the brightness mean and variance of an image to maximize the entropy of the image. In our histogram specification step, the Gaussian distribution is used to fit the input histogram as well as produce the target histogram. Specifically, the input histogram is fitted with the Gaussian distribution whose mean and variance are equal to the brightness mean(${\mu}$) and variance(${\sigma}2$) of the input image, respectively; and the target Gaussian distribution also has the mean of the value ${\mu}$, but takes as the variance the value which is determined such that the output image has the maximum entropy. Experimental results show that compared to the existing methods, the proposed method preserves the mean brightness well and generates more natural looking images.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.3
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• pp.672-677
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• 2013

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.811-814
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• 2012

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.753-756
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• 2013

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1338-1342
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• 2011

In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.