• The Korean Journal of Applied Statistics
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• v.26 no.1
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• pp.37-47
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• 2013

A Q-Q plot is an effective and convenient graphical method to assess a distributional assumption of data. The primary step in the construction of a Q-Q plot is to obtain a closed-form expression to represent the relation between observed quantiles and theoretical quantiles to be plotted in order that the points fall near the line y = a + bx. In this paper, we introduce a Q-Q plot to assess goodness-of-fit for inverse Gaussian distribution. The procedure is based on the distributional result that a transformed random variable $Y={\mid}\sqrt{\lambda}(X-{\mu})/{\mu}\sqrt{X}{\mid}$ follows a half-normal distribution with mean 0 and variance 1 when a random variable X has an inverse Gaussian distribution with location parameter ${\mu}$ and scale parameter ${\lambda}$. Simulations are performed to provide a guideline to interpret the pattern of points on the proposed inverse Gaussian Q-Q plot. An illustrative example is provided to show the usefulness of the inverse Gaussian Q-Q plot.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.716-718
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• 2012

This paper have presented the change for subthreshold characteristics for double gate(DG) MOSFET based on scaling theory and the shape of Gaussian function. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution and consequently potential distributions have been analyzed closely for experimental results, and the subthreshold characteristics have been analyzed for the shape parameters of Gaussian function such as projected range and standard projected deviation. Since this potential model has been verified in the previous papers, we have used this model to analyze the subthreshold chatacteristics. The scaling theory is to sustain constant outputs for the change of device parameters. As a result to apply the scaling theory for DGMOSFET, we know the subthreshold characteristics have been greatly changed, and the change of threshold voltage is bigger relatively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1260-1265
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• 2012

This paper have presented the change for subthreshold characteristics for double gate(DG) MOSFET based on scaling theory and the shape of Gaussian function. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution and consequently potential distributions have been analyzed closely for experimental results, and the subthreshold characteristics have been analyzed for the shape parameters of Gaussian function such as projected range and standard projected deviation. Since this potential model has been verified in the previous papers, we have used this model to analyze the subthreshold chatacteristics. The scaling theory is to sustain constant outputs for the change of device parameters. As a result to apply the scaling theory for DGMOSFET, we know the subthreshold characteristics have been greatly changed, and the change of threshold voltage is bigger relatively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.681-684
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• 2011

In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The subthreshold swing has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and subthreshold swing has been obtained from this model. The subthreshold swing has been defined as the derivative of gate voltage to drain current and is theoretically minimum of 60mS/dec, and very important factor in digital application. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the subthreshold swings have been analyzed according to the shape of Gaussian function.

• Journal of KIISE:Information Networking
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• v.29 no.5
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• pp.553-561
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• 2002

We present a novel service discipline, called linear service discipline, to serve multiple QoS queues sharing a resource and analyze its properties. The linear server makes the output traffic and the queueing dynamics of individual queues as a linear function of its input traffic. In particular, if input traffic is Gaussian, the distributions of queue length and output traffic are also Gaussian with their mean and variance being a function of input mean and input power spectrum (equivalently, autocorrelation function of input). Important QoS measures including buffer overflow probability and queueing delay distribution are also expressed as a function of input mean and input power spectrum. This study explores a new direction for network-wide traffic management based on linear system theories by letting us view the queueing process at each node as a linear filter.

• Proceedings of the Acoustical Society of Korea Conference
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• 1998.06e
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• pp.243-246
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• 1998

집속음장의 고조파성분을 이용한 초음파영상의 특성을 해석하기 위해 집속된 가우스 음원에 직선 edge를 초점면 및 초점면의 전, 후방에 삽입하여 edge의 후방에서 생성되는 음장을 조사하였다. 계산에서는 그린함수의 간단화를 위해 Fresnel근사를 이용하였고, 실험에서는 성형전극을 형성시킨 1.9MHz 요면진동자에 의한 가우스분포의 음장을 갖는 초음파빔에 수직하게 edge를 삽입시켰다. 음장의 이론해석 및 실험결과, 초점면의 제2고조파의 빔형상을 제외하고는 계산치와 실험치가 잘 일치하고 있으며, 제2고조파의 공간 분해능이 기본파에 비해 높음을 알았다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.10
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• pp.2217-2222
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• 2011

In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The relationship of subthreshold swing and oxide thickness has been investigated according to variables of doping distribution using Gaussian function, i.e. projected range and standard projected deviation, The analytical potential distribution model has been derived from Poisson's equation, and subthreshold swing has been obtained from this model for the change of oxide thickness. The subthreshold swing has been defined as the derivative of gate voltage to drain current and is theoretically minimum of 60 mS/dec, and very important factor in digital application. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the relationship of subthreshold swing and oxide thickness have been analyzed according to the shape of doping distribution.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2267-2272
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• 2012

This study has presented the analysis of subthreshold swings based on scaling theory for double gate MOSFET. To solve the analytical potential distribution of Poisson's equation, we use Gaussian function to charge distribution. The scaling theory has been used to analyze short channel effect such as subthreshold swing degradation. These scaling factors for gate length, oxide thickness and channel thickness has been modified with the general scaling theory to include effects of double gates. We know subthreshold swing degradation is rapidly reduced when scaling factor of gate length is half of general scaling factor, and parameters such as projected range and standard projected deviation have greatly influenced on subthreshold swings.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.22 no.2
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• pp.189-196
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• 2009

This paper presents the subparametric finite element model formulated by partial-linear layerwise theory for the analysis of laminate composites. The proposed model is based on refined approximations of two dimensional plane for orthotropic thick laminate plate as well as thin case. Three dimensional problem can be reduced to two dimensional case by assuming piecewise linear variation of in-plane displacement and a constant value of out-of-plane displacement across the thickness. The integrals of Legendre polynomials are chosen to define displacement fields and Gauss-Lobatto numerical integration is implemented in order to directly obtain maximum values occurred at the nodal points of each layer without other extrapolation techniques. The validity and characteristics of the proposed model have been tested by using orthotropic multilayered plate problem as compared to the values available in the published references. In this study, the convergence test has been carried out to determine the optimal layer model in terms of central deflection and stresses. Also, the distribution of displacements and stresses across the thickness has been investigated as the number of layer is increased.

• Communications for Statistical Applications and Methods
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• v.15 no.5
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• pp.737-752
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• 2008

About 1800, mathematicians combined analysis of error and probability theory into error theory. After developed by Gauss and Laplace, error theory was widely used in branches of natural science. Motivated by the successful applications of error theory in natural sciences, scientists like Adolph Quetelet tried to incorporate social statistics with error theory. But there were not a few differences between social science and natural science. In this paper we discussed topics raised then. The problems considered are as follows: the interpretation of individual man in society; the arguments against statistical methods; history of the measures for diversity. From the successes and failures of the $19^{th}$ century social statisticians, we can see how statistics became a science that is essential to both natural and social sciences. And we can see that those problems, which were not easy to solve for the $19^{th}$ century social statisticians, matter today too.