• Journal of the Korean Vacuum Society
• /
• v.16 no.2
• /
• pp.153-159
• /
• 2007

In-cryostat helium lines are under installation to transfer a cryogenic helium into cold components in KSTAR device. In KSTAR, three kinds of helium should be supplied into the cold components, which are supercritical helium Into superconduction(SC) magnet system, liquid helium into current lead system, and gas helium into thermal shields. Cryogenic helium lines consist of transfer lines outside the cryostat, in-cryostat helium lines, and electrical breaks. In-cryostat helium lines should be guaranteed of leak tightness for tong time operation at high internal helium pressure of 20 bar. We wrapped the helium line with multi-layer insulator(MLI) to reduce radiation heat and insulated the surface of the high potential part with prepreg tape. The electrical break was fabricated by brazing ceramic tube with stainless steel tube. To ensure the operation reliability at operation temperature, all the electrical break have been examined by the thermal cycle test at liquid nitrogen and by the hydraulic test at 30 bar. And additional surface insulation was prepared with prepreg tape to give structural safety. At present most of the in-cryostat helium lines have been installed and the final inspection test is progressing.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.28 no.4
• /
• pp.435-442
• /
• 2004

This paper presents a hermetic MEMS on-chip package bonded by a closed-loop AuSn solder-line. We design three different package specimens, including a substrate heated specimen without interconnection-line (SHX), a substrate heated specimen with interconnection-line (SHI) and a locally heated specimen with interconnection-line (LHI). Pressurized helium leak test has been carried out for hermetic seal evaluation in addition to the critical pressure test for bonding strength measurement. Substrate heating method (SHX, SHI) requires the bonding time of 40min. at 400min, while local heating method (LHI) requires 4 min. at the heating power of 6.76W. In the hermetic seal test. SHX, SHI and LHI show the leak rates of 5.4$\pm$6.7${\times}$$^{-10}$ mbar-l/s, 13.5$\pm$9.8${\times}$$^{-10}$ mbar-l/s and 18.5$\pm$9.9${\times}$$^{-10}$ mbar-l/s, respectively, for an identical package chamber volume of 6.89$\pm$0.2${\times}$$^{-10}$. In the critical pressure test, no fracture is found in the bonded specimens up to the applied pressure of 1$\pm$0.1MPa, resulting in the minimum bonding strength of 3.53$\pm$0.07MPa. We find that the present on-chip packaging using a closed AuSn solder-line shows strong potential for hermetic MEMS packaging with interconnection-line due to the hermetic seal performance and the shorter bonding time for mass production.