• 가정과삶의질연구
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• 제2권1호
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• pp.165-177
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• 1984

The purpose of this study was to investigate satisfaction with the function of interior space of apartment and factor which influence it, and then to provide housing practitioners with basic data for more desirable apartment interior environment. On the basis of the review of literature, questionnaire was developed. The sample was classified into type of unit floor plan and house size of 17 districts in Seoul. 139 households were selected in three districts which were the first three regions of high apartment density. Data were analyzed by computer using frequency, percentage, mean, standard deviation, F-test, Duncans multiple range test, η2 , person's product moment correlation coefficient. the results are as follows: Factors which influence satisfaction with the functionality of interior were household size and family life cycle as sociodemographic variable, and type of unit floor plan as physical variable. It was shown that the satisfaction with the functionality of interior was related to satisfaction with the external environment. More specifically, (1)the smaller a household size was the more the owner became satisfied. (2)households were in the stage of establishment in the family life cycle and households with C type of unit floor plan showed higher degree of satisfaction. (3) satisfaction with the functionality of interior had positibly related to satisfaction with the external environment.

• Earthquakes and Structures
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• 제22권6호
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• pp.585-595
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• 2022

Using the nonlinear static procedures has become very common in seismic codes to achieve the nonlinear response of the structure during an earthquake. The capacity spectrum method (CSM) adopted in ATC-40 is considered as one of the most known and useful procedures. For this procedure the seismic demand can be approximated from the maximum deformation of an equivalent linear elastic Single-Degree-of-Freedom system (SDOF) that has an equivalent damping ratio and period by using an iterative procedure. Data from the results of this procedure are plotted in acceleration- displacement response spectrum (ADRS) format. Different improvements have been made in order to have more accurate results compared to the Non Linear Time History Analysis (NL-THA). A new procedure is presented in this paper where the iteration process shall not be required. This will be done by estimation the ductility demand response spectrum (DDRS) and the corresponding effective damping of the bilinear system based on a new parameter of control, called normalized yield strength coefficient (η), while retaining the attraction of graphical implementation of the improved procedure of the FEMA-440. The proposed procedure accuracy should be verified with the NL-THA analysis results as a first implementation. The comparison shows that the new procedure provided a good estimation of the nonlinear response of the structure compared with those obtained when using the NL-THA analysis.

• 한국광학회지
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• 제9권6호
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• pp.408-412
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• 1998

곡선형 광도파로의 곡률반경이 작아짐에 따라 도파모드와 전파상수의 변화가 심화되므로 이종도파로 접합부에서의 모드 부정합이 손실을 유발하는 문제가 심각해졌다. 따라서, 곡률반경 변화에 따른 도파로의 모드 부정합을 극소화하기 위하여 이종 도파로간 lateral offset 이 제안되어 이의 계산이 여러 가지 방법으로 수행되어 왔는데, 본 논문에서는 유효 굴절률법(Effective index method)을 활용하고, Airy 함수로 주어지는 해석적 함수해의 분석을 통하여 곡률반경에 따른 전파모드의 특성변화와 lateral offset 거리의 변화를 분석하였다. 1/V=0.7인 특정조건을 경계로 모드분포의 특성이 바뀌며, 기존의 Gaussian 분석법에 의한 계산결과는 35%까지도 오차가 증대될 수 있음을 보였다. 새로이 오차보정상수(correction factor)η를 정의하여 기존 근사방식의 오차를 정량화하고, 간편히 도파로의 lateral offset을 설계 할 수 있도록 개선된 lateral offset 계산안을 제안하여 타당성을 보였다.

• KSBB Journal
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• 제5권3호
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• pp.279-291
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• 1990

Chitin을 35 mesh로 분쇄하여 강산과 강알카리로 처리하여 CHITA와 CHITB를 만들고 여기에 glutaraldehyde를 작용시켜 $\beta$-glucosidase를 고정하여 CHITA-Gase 및 CHITB-Gase를 제조하였다. 이 두 종류의 고정화 효소를 기질 p-nitropheol-$\beta$-D-gliucopyranoside(PNG)과 회분식 반응기, 연속 흐름 반응기 및 플러그 흐름 반응기에서 반응시켜 최적 온도, 최적 pH, 반응 속도 상수, 물질 전달 계수, 효율 인자 및 효소 불활성화 속도 등을 구하여 반응기별 효율을 검토하였다. 반응 최적 온도는 세가지의 반응기 모두 5$0^{\circ}C$였으며, 최적 pH는 플러그 흐름 반응기에서는 Nat-Gase와 같이 pH5.0이었고 회분식 반응기 및 연속 흐름 반응기에서는 최적 pH의 이동이 일어나 pH6.0으로 이었다. 반응기의 최적 조건에서 km값은 회분식 반응기에서 CHITB-Gase$1.725$\times$10^-^5M/1$가 CHITA-Gase($1.725$\times$10^-^5M/1$)보다 작았으며, 연속 흐름 반응기 및 플러그 흐름 반응기에서는 유속 증가에 따라 Km'치가 감소하는 경향을 보였고, CHITB-Gase가 CHITB-Gase보다 더 작았다. $V^m^a^x'$값은 회분식 반응기, 연속 흐름 반응기, 플러그 흐름 반응기에서 모두 CHITA-Gase가 CHITB-Gase보다 높은 것으로 나타났다. 그리고, 물질전달계수 및 효율인자, 효소 불활성화 속도등의 값은 환경은 CHITB-Gase의 것이 나은 것으로 나타났다. 이들의 결과에서 CHITA-Gase 및 CHITB-Gase는 기질과의 반응 환경이 좋으므로 chitind은 $\beta$-glucosidase의 좋은 지지체라고 판단되어 공업적 응용이 기대된다.

• 전자공학회논문지A
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• 제30A권12호
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.110-113
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• 1992

$n^{+}$-p homojunction InP diodes were fabricated using thermal diffusion of Sulfur into p-type InP substrates(Zn doped, LEC grown, p=2.3${\times}$10$^{16}$c $m^{-3}$). The Sulfur diffusion was carried out at 550$^{\circ}C$, 600$^{\circ}C$, 700$^{\circ}C$ for 4 hours in a sealed quartz ampule(～2ml in volume) containing 5mg I $n_2$ $S_3$ and Img of red phosphorus. The formed junction depth was below 0.5$\mu\textrm{m}$. After the removal of diffused layer on the rear surface of the wafer, the beak ohmic contacts to the p-side were made with a vacuum evaporation of An-Zn(2%) followed by an annealing at 450$^{\circ}C$ for 5 minutes in flowing Ar gas. The front contacts were made with a vacuum evaporation of Au-Ge(12%) followed by an annealing at 500$^{\circ}C$ for 3 minutes in flowing Ar gas. The remarkable sprctral response of the cells obtained at the region of 6000-8000${\AA}$ region. The open circuit voltage $V_{oc}$ , short circuit current density $J_{sc}$ , fill factor and conversion efficiency η of the fabricated pattern solar cells(diffusion condition : at 700$^{\circ}C$ for 4 hours) were 0.660V, 14.04㎃/$\textrm{cm}^2$, 0.6536 and 10.09%, respectively.y.