• 제목/요약/키워드: /o/-rising

검색결과 171건 처리시간 0.023초

폐수 처리용 고전압 나노 펄스 발생기 (High Voltage Nano-Pulse Generator for Industrial Waste Water Treatment)

  • 장성덕;손윤규;오종석;권오정
    • 한국산업융합학회 논문집
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    • 제4권3호
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    • pp.311-318
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    • 2001
  • The application of a pulsed power system is being extended to a environmental and industrial fields. The non-dissolution waste water pollutants from industrial plants can be processed by applying high voltage pulses with a fast rising time (a few nanoseconds) and short duration (nano to microseconds) in a pulsed corona discharge reactor. The nano-pulse generator with a magnetic switch has been developed. Its corona current in load can be adjusted by pulse width and repetition rate. we investigated the performance of the nano-pulse generator using the dummy load which is composed of resistor and capacitor equivalent to the actual reactor. This paper descibes the electrical characteristics of the nano-pulse generator that produces a 300 ns pulse at maximum repetition rate of 400 pps with a voltage of 40 kV across a $640{\Omega}$ load. In this paper we briefly discuss a configuration of system and test results.

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One-step diffusion으로 형성된 선택적 에미터 결정질 실리콘 태양전지에 관한 연구 (Crystalline Silicon Solar Cell with Selective Emitter Using One-step Diffusion Process)

  • 정경택;양오봉;유권종;이정철;송희은
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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    • pp.40-44
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    • 2011
  • Recent studies in crystalline silicon solar cell fabrication have been focused on high efficiency and low cost. However, the rising of the cost results in additional processes to approach high efficiency. The fabrication process also becomes complicated with additional technologies. In this paper, we studied the selective emitter formation with phosphorous paste to improve the conversion efficiency. Selective emitter formations like two-step diffusion or etch-back method require at least one more step compared in the conventional line since heavily and lightly doped area was needed to form separately.However,one-step diffusion process is the method diffusing heavily and lightly doped area at the same time only with additional screen-printing step. This study lays the foundation for the simple way to form the selective emitter.

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헬륨분사를 통한 액체산소 냉각의 이론적 고찰 및 해석과 시험의 비교 (Investigation of helium injection cooling to liquid oxygen chamber)

  • 권오성;조남경;정용갑;이중엽
    • 항공우주기술
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    • 제5권2호
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    • pp.134-142
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    • 2006
  • 헬륨분사를 통한 극저온 추진제의 과냉각 방식은 발사체의 이륙 전에 액체산소의 bulk boiling을 억제하고 과냉각 상태를 유지하기 위한 효과적인 방법들 중의 하나이다. 본 자료에서는 이러한 헬륨 분사 냉각 시스템에 대한 이론적 고찰을 통해 열전달과 질량전달 조건을 이해하고, 해석 모델을 제시하였다. 해석 모델의 주요 특징은 유한 열전달과 무한질량전달 개념을 이용하여 분사 시스템을 표현한 것이다. 또한, 실험과 해석결과의 비교를 통하여 해석 모델을 검증하였으며, 헬륨 분사량의 변화, 탱크 압력의 변화 등 조건 변화에 따른 결과를 살펴보았다.

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Surface and Adsorption Properties of Activated Carbon Fabric Prepared from Cellulosic Polymer: Mixed Activation Method

  • Bhati, Surendra;Mahur, J.S.;Dixit, Savita;Choubey, O.N.
    • Bulletin of the Korean Chemical Society
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    • 제34권2호
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    • pp.569-573
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    • 2013
  • In this study, activated carbon fabric was prepared from a cellulose-based polymer (viscose rayon) via a combination of physical and chemical activation (mixed activation) processes by means of $CO_2$ as a gasifying agent and surface and adsorption properties were evaluated. Experiments were performed to investigate the consequence of activation temperature (750, 800, 850 and $925^{\circ}C$), activation time (15, 30, 45 and 60 minutes) and $CO_2$ flow rate (100, 200, 300 and 400 mL/min) on the surface and adsorption properties of ACF. The nitrogen adsorption isotherm at 77 K was measured and used for the determination of surface area, total pore volume, micropore volume, mesopore volume and pore size distribution using BET, t-plot, DR, BJH and DFT methods, respectively. It was observed that BET surface area and TPV increase with rising activation temperature and time due to the formation of new pores and the alteration of micropores into mesopores. It was also found that activation temperature dominantly affects the surface properties of ACF. The adsorption of iodine and $CCl_4$ onto ACF was investigated and both were found to correlate with surface area.

Comprehensive Wear Study on Powder Metallurgical Steels for the Plastics Industry, Especially Injection Moulding Machines

  • Gornik, Christian;Perko, Jochen
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.399-400
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    • 2006
  • M390 microclean(R) of $B{\ddot{o}}hler$ Edelstahl is a powder metallurgical plastic mould steel with a high level of corrosion and wear resistance and therefore often used in the plastics processing industry. But as a consequence of rapidly advancing developments in the plastics processing industry the required level of wear resistance of tool steels in this field is constantly rising. For that reason a new PM tool steel with higher hardness values and an increased amount of primary carbides has been developed to improve the resistance against abrasive and adhesive wear. The wear resistance of both steels against adhesive situations for components of the plastification unit of injection moulding machines has been tested with a novel method. In case of processing polyolefins with an injection moulding machine it was found that there is adhesive wear between the check-ring and the flights of the screw tip of the non-return valve under certain circumstances. The temperature in that region was measured with an infrared temperature sensor. The existence of significant peaks of that signal was used as an indicator for an adhesive wear situation.

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Impact of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

  • Kang, Min-Seok;Bahng, Wook;Kim, Nam-Kyun;Ha, Jae-Geun;Koh, Jung-Hyuk;Koo, Sang-Mo
    • Journal of Electrical Engineering and Technology
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    • 제7권2호
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    • pp.236-239
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    • 2012
  • In this paper, we study the transient characteristics of 4H-SiC DMOSFETs with different interface charges to improve the turn-on rising time. A physics-based two-dimensional mixed device and circuit simulator was used to understand the relationship between the switching characteristics and the physical device structures. As the $SiO_2$/SiC interface charge increases, the current density is reduced and the switching time is increased, which is due primarily to the lowered channel mobility. The result of the switching performance is shown as a function of the gate-to-source capacitance and the channel resistance. The results show that the switching performance of the 4H-SiC DMOSFET is sensitive to the channel resistance that is affected by the interface charge variations, which suggests that it is essential to reduce the interface charge densities in order to improve the switching speed in 4H-SiC DMOSFETs.

이산화탄소 레이저를 이용한 바나듐 이산화물 박막 전자 소자에서의 전류 스위칭에 관한 연구 (Study on Current Switching in Electronic Devices Based on Vanadium Dioxide Thin Films Using CO2 Laser)

  • 김지훈;이용욱
    • 조명전기설비학회논문지
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    • 제30권1호
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    • pp.1-7
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    • 2016
  • With a collimated $CO_2$ laser beam, the bidirectional current switching was realized in a two-terminal electronic device based on a highly resistive vanadium dioxide($VO_2$) thin film. A $VO_2$ thin film was grown on a $Al_2O_3$ substrate by a pulsed laser deposition method. For the fabrication of a two-terminal electronic device, the $VO_2$ thin film was etched by an ion beam-assisted milling method, and the $VO_2$ device, of which $VO_2$ patch width and electrode separation were 50 and $100{\mu}m$, respectively, was fabricated through a photolithographic method. A bias voltage range for stable bidirectional current switching was found by using the current-voltage property of the device measured in a current-controlled mode. The transient responses of bidirectionally switched currents were analyzed when the laser was modulated at a variety of pulse widths and repetition rates. A switching contrast was measured as ~3333, and rising and falling times were measured as ~39 and ~21ms, respectively.

폴리머 피뢰기의 구조에 따른 온도와 누설전류 특성 (Temperature and Leakage Current Characteristics with Structure of Polymeric Surge Arresters)

  • 조한구;이운용;김하나
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.513-514
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    • 2006
  • This paper presents the temperature characteristics with the structure of 18 kV surge arresters for distribution system. Three types of polymer arrester were fabricated and a ceramic arrester was also prepared to investigate. Below $100^{\circ}C$, three types of polymeric arresters exhibited almost the same leakage current value, but above $100^{\circ}C$, the polymeric arresters whose module was injected into polymeric housing with the grease exhibited the highest leakage current. In contrary, the arresters being manufactured by directly injecting silicone rubber onto arrester module exhibited the lowest leakage current. The rapid rising of leakage current of the polymeric arresters with the grease at $120^{\circ}C$ was because of the deterioration of the insulation characteristics of the grease between the FRP module and the silicone housing. All polymeric arresters exhibited the same surface temperature characteristics but the ceramic arresters was slower than the polymer arrester in heat emission despite the lowest leakage current. It was thought that the air layer between ZnO varistor blocks and the ceramic housing prevented the heat emission.

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High-temperature interaction of oxygen-preloaded Zr1Nb alloy with nitrogen

  • Steinbruck, Martin;Prestel, Stefen;Gerhards, Uta
    • Nuclear Engineering and Technology
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    • 제50권2호
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    • pp.237-245
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    • 2018
  • Potential air ingress scenarios during accidents in nuclear reactors or spent fuel pools have raised the question of the influence of air, especially of nitrogen, on the oxidation of zirconium alloys, which are used as fuel cladding tubes and other structure materials. In this context, the reaction of zirconium with nitrogen-containing atmospheres and the formation of zirconium nitride play an important role in understanding the oxidation mechanism. This article presents the results of analysis of the interaction of the oxygen-preloaded niobium-bearing alloy $M5^{(R)}$ with nitrogen over a wide range of temperatures ($800-1400^{\circ}C$) and oxygen contents in the metal alloy (1-7 wt.%). A strongly increasing nitriding rate with rising oxygen content in the metal was found. The highest reaction rates were measured for the saturated ${\alpha}-Zr(O)$, as it exists at the metal-oxide interface, at $1300^{\circ}C$. The temperature maximum of the reaction rate was approximately 100 K higher than for Zircaloy-4, already investigated in a previous study. The article presents results of thermogravimetric experiments as well as posttest examinations by optical microscopy, scanning electron microscopy (SEM), and microprobe elemental analyses. Furthermore, a comparison with results obtained with Zircaloy-4 will be made.

비정질 산화물 반도체의 열전특성 (Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials)

  • 김서한;박철홍;송풍근
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.52-52
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    • 2018
  • Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.

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