• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.3 s.94
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• pp.253-259
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• 2005

In this paper, BaSrTiO$_{3}$(BST) thin film tunable interdigital capacitor using low cost silicon substrate instead of expensive single-crystalline substrate is presented. The tunable capacitor in which BST thin film is deposited by PLD has operation frequency and applied bias up to 4 GHz and 50 V, respectively. The maximum tunability in capacitance is found to be 30$\%$, for an applied field of 5 kV/cm at a bias of 50 V. Therefore, it has been shown that the BST microwave tunable capacitor can be integrated onto Si substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.660-663
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• 2001

The devices of BST thin films to composite (Ba$\_$0.7/ Sr$\_$0.3/)TiO$_3$using sol-gel method were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.43-46
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• 2000

In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$TiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at 150[$^{\circ}C$] for 5 minutes. Coating process was repeated 3 times and then sintered at 750[$^{\circ}C$] for 30 minutes. Structure and electrical characteristics of specimen was analyzed by Fractal Process. Thickness of BST ceramics thin films are about 2800[$\AA$]. Dielectric constant and loss of thin films was little decreased at 1[kHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the relation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.63-69
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• 1999

The electrical properties of rf-magnetron sputtered $Ba_{0.5}Sr_{0.3}TiO_3$ (BST) capacitors were investigated by varying annealing temperature and atmosphere of the rapid thermal annealing (RTA). The electrical properties of Pt/BST/Pt capacitors were found to strongly depend on the RTA condition. It seems that the dependence of the electrical properties of the Pt/BST/Pt capacitors on the RTA condition is related to the oxygen vacancies in BST thin films. In order to clarify the relation between the oxygen vacancies and the electrical properties of Pt/BST/Pt capacitors, we have examined the two different annealing methods. One annealing method was performed in $O_2$ gas and the other was done in $O_2$-plasma at the same condition of 450$^{\circ}C$, 20 mtorr. It was found that the leakage current densities of $O_2$-plasma annealed capacitor were much lower than those of $O_2$ annealed capacitor. The dielectric constants of $O_2$ annealed capacitor decreased about 14% comparing with those of as-deposited. In contrast, there was no decrease in the dielectric constant of $O_2$-plasma annealed. These results indicate that $O_2$-plasma annealing is very effective in compensation the oxygen vacancies in BST thin films. It can be also concluded that the oxygen vacancies greatly affect the electrical properties of Pt/BST/Pt capacitors.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.152-152
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• 1999

1Gb급 이상 기억소자의 캐패시터 재료로 주목받고 있는 (Ba,Sr)TiO3 [BST] 박막의 전극재료로는 Pt, Ru, Ir과 같은 금속전극과 RuO2, IrO2와 산화물 전도체가 유망한 것으로 알려져 있다. 그런데, DRAM의 집적도가 증가하게 되면, BST같은 고유전율 박막을 유전재료로 사용한다 하더라도, 3차원적인 구조가 불가피하게 때문에 기존의 sputtering 방법으로는 우수한 단차피복성을 얻기 힘들므로, MOCVD법이 필수적이다. 본 연구에서는 기존에 연구되었던 Pt에 비해 식각특성이 우수하고, 비교적 낮은 비저항을 갖는 Ru 박막증착에 대한 연구를 행하였다. 본 연구에서는 수직형의 반응기와 저항 가열 방식의 susceptor로 구성된 저압 유기금속 화학증착기를 사용하여 최대 6inch 직경을 갖는 기판 위에 Ru박막을 증착하였다. Precursor로는 기존에 연구된 적이 없는 bis-(ethyo-$\pi$-cyclopentadienyl)Ru (Ru(C5H4C2H5)2, [Ru(EtCp)2])를 사용하였으며, bubbler의 온도는 85$^{\circ}C$로 하였다. Si, SiO2/Si를 사용하였으며, 증착온도 25$0^{\circ}C$~40$0^{\circ}C$, 증착압력 3Torr의 조건에서 Ru 박막을 증착하였다. Presursor를 운반하는 수송기체로는 Ar을 사용하였으며, carbon과 같은 불순물의 제거를 위해 O2를 첨가하였다. 증착된 박막은 XRD, SEM, 4-point probe등을 통해 구조적, 전기적 특성을 평가하였으며, 열역학 계산을 위해서는 SOLGASMIX-PV프로그램을 사용하였다. Ru 박막의 증착에 있어서 산소의 첨가는 필수적이었으며, Ru 박막의 증착속도는 30$0^{\circ}C$~40$0^{\circ}C$의 온도 영역에서 200$\AA$/min으로 일정하였으며, 첨가된 산소의 양이 적을수록 더 치밀하고 평탄한 표면형상을 보였으며, 또한 더 낮은 전기 전도도를 보였다. 그리고 증착된 박막은 12~15$\mu$$\Omega$cm 정도의 낮은 비저항 값을 나타냈으며 이것은 기존의 sputtering 법에 의해 증착된 Ru 박막의 비저항 값들과 비교될만하다. 한편, 높은 온도, 높은 산소분압 조건에서 RuO2의 형성을 관찰하였으며, 이것은 열역학적인 계산을 통해서 잘 설명할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.375-375
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• 2009

For many large-scale applications of high-temperature superconducting materials, large critical current density($J_c$) in high applied magnetic fields are required. A number of methods have been reported to introduce artificial pinning centers(APCs) in $YBa_2Cu_3O_{7-\delta}$(YBCO) films for enhancement of their $J_c$. We report measurements of critical current in $YBa_2Cu_3O_{7-\delta}$ films deposited by PLD on $SrTiO_3$ substrates decorated with Au nanoparticles. Au nanoparticles were synthesized on STO substrates with self assembled monolayer. Microstructural analysis of the obtained YBCO films was performed by using cross-section transmission electron microscopy(TEM). Phase and textural analysis was done using X-ray diffraction. The surface morphology and surface roughness(Ra) of the layers was measured by atomic force microscopy(AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.171-174
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• 2002

The barium strontium titannate (BST) thin films were etched in $CF_{4}/Ar$ inductively coupled plasma (ICP). The high etch rate obtained at a $CF_{4}(20%)/Ar(80%)$ and the etch rate in pure argon was twice higher than that in pure $CF_{4}$. This indicated that BST etching is sputter dominant process. It is impossible to avoid plasma-induced damages by the energetic particles in the plasma and the nonvolatile etch products. The plasma damages were evaluated in terms of leakage current density, residues on the etched sample, and the changes of roughness. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. In addition, there are appeared a nonvolatile etch byproductsand from the result of X-ray photoelectron spectroscopy (XPS). After annealing at ${600^{\circ}C}$ for 10 min in $O_{2}$ ambient, the increased leakage current density, roughness and nonvolatile etch byproducts reduced. From the this results, the plasma induced damage recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• Progress in Superconductivity and Cryogenics
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• v.7 no.1
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• pp.13-16
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• 2005

High temperature superconductor, $\YBa_2Cu_3O_{7-x}$ (YBCO) and ferroelectric, $\Ba_{0.1}Sr_{0.9}TiO_{3}$ (BST) multilayer thin films were deposited using on MgO(100) substrates pulsed laser deposition. The thin films exhibited only (001) peaks of YBCO and 1357 The HTS thin films demonstrated excellent zero resistance temperature of 92.5 K. We designed and fabricated HTS ferroelectric phase shifter using high frequency system simulator and standard photolithography method, respectively The HTS phase shifter shows a low insertion loss (2.97 dB) and large phase change ($\162^{circ}$) with 40 V do bias at 10 GHz. The HTS phase shifter shows 54 of figure of merit. These results can be applicable to phased anay antenna system for satellite communication services.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.10-15
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• 1999

White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was $Ba_{0.5}Sr_{0.5}TiO_3$, substrate temperature was $400^{\circ}C$, working pressure was 30 mTorr, and A:$O_2$ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor tapers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was $95\;V_{rms}$, maximum brightness was $3,000\;cd/m^2$ at $150\;V_{rms}$. Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$increases in C1$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinity of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.