• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.632-635
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The dielectric properties were investigated for various composition ratio and $Nb_2O_5$ doping contents. All the BSCT thick films, sintered at $1420^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The Curie temperature and the relative dielectric constant decreased with increasing Ca content and $Nb_2O_5$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 1.0wt% $Nb_2O_5$ were 1410, 0.65% and 17.29% respectively.

• The Journal of the Petrological Society of Korea
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• v.5 no.2
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• pp.142-160
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• 1996

Petrological and geochemical characteristics of A-type granite were studied from the Namsan and Tohamsan granites in the vicinity of Kyeongju city, southeastern Korea. The Namsan granite consists of hypersolvus alkali-feldspar granite in the northern part and subsolvus alkali-feldspar to biotite granite in the southern part. This hypersolvus granite usually has miarolitic cavities and is characteristically composed of quartz, single homogeneous one-feldspar (alkali feldspar) forming tabular microperthite crystals, or micrographic intergrowth with quartz, and interstitial biotite (Fe-rich annite), alkali amphibole (riebeckitic arfvedsonite) and fluorite. Petrographic and petrochemical characteristics indicate that the hypersolvus granite and subsolvus granite from the Namsan belogn to the A-type and I-type granitoid, respectively. The A-type granite is petrochemically distinguished from the I-type Bulgugsa granites of Late Cretaceous in South Korea, by higher abundance of $SiO_2$, $Na_2O$, $Na_2O+K_2O$, large highly charged cations such as Rb, Nb, Y, Zr, Ga, Th, Ce. U the REEs and Ga/Al ratio, and lower abundance of $TiO_2$, $Al_2O_3$, CaO, $P_2O_5$, MnO, MgO, Ba, Sr, Eu. The total abundance of REEs is 293 ppm to 466 ppm, showing extensively fractionated granitic compositon, and REEs/chondrite normalized pattern shows flat form with strong Eu '-' anomaly ($Eu/Eu^{\ast}$=0.03-0.05). A-type granite from the Namsan area is thought to have been generated late in the magmatic/orogenic cycle after the production of I-type granite and by direct, high-temperature partial melting of melt-depleted, relatively dry tonalitic/granulitic lower crustal material with underplating by mantle-derived basaltic magmas associated with subduction.

• Progress in Superconductivity and Cryogenics
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• v.7 no.1
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• pp.13-16
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• 2005

High temperature superconductor, $\YBa_2Cu_3O_{7-x}$ (YBCO) and ferroelectric, $\Ba_{0.1}Sr_{0.9}TiO_{3}$ (BST) multilayer thin films were deposited using on MgO(100) substrates pulsed laser deposition. The thin films exhibited only (001) peaks of YBCO and 1357 The HTS thin films demonstrated excellent zero resistance temperature of 92.5 K. We designed and fabricated HTS ferroelectric phase shifter using high frequency system simulator and standard photolithography method, respectively The HTS phase shifter shows a low insertion loss (2.97 dB) and large phase change ($\162^{circ}$) with 40 V do bias at 10 GHz. The HTS phase shifter shows 54 of figure of merit. These results can be applicable to phased anay antenna system for satellite communication services.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.41.4-41
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

• The Journal of the Petrological Society of Korea
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• v.6 no.1
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• pp.1-18
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• 1997

Andesitic pyroclastics and lava flows are deposited as a part of composite volcanoes by Cretaceous volcanic activity in Geojae Island, off the coast of Korea. The andesitic pyroclastics are composed of tuff breccia and lapilli tuff minor intercalated tuff. Lava flows are divided into dense and porphyritic andesite containing phenocrysts of plagioclase, pyroxene, and/or hornblende. The andesitic rocks represent charactersitcs of carc-alkaline BAR association with basalt, basaltic andesite, andesite, and dacite to rhyolite. Major element variations of the volcanic rocks show that $Al_2O_3$, total FeO, CaO, MgO and $TiO_2$ decrease with increasing $SiO_2$ but $K_2O$ and total alkalis increase, and represent differntiation trend of calc-alkaline rock series. In spider diagram, contents of Sr, K, Rb, Ba, and Th are relatively high, but contents of Nb, P, Ti and Cr are low. These petrochemcial characteristics are similar to those of rocks from island arc or continental margein related to plate subduction. Chondrite-normalized REE patterns of volcanic rocks are paralle to subparallel, with LREE enriched than HREE, and show gradual increase of negative Eu anomaly from basalt to dacite and rhyolite, suggesting comagmatic fractional crystallization with minor effects of assimilation and magma mixing. Andesitic rocks are assumed medium-K orogenic andesites that formed in the tectomagmatic environment of subduction zone under normal continental margin arc.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.63-69
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• 1999

The electrical properties of rf-magnetron sputtered $Ba_{0.5}Sr_{0.3}TiO_3$ (BST) capacitors were investigated by varying annealing temperature and atmosphere of the rapid thermal annealing (RTA). The electrical properties of Pt/BST/Pt capacitors were found to strongly depend on the RTA condition. It seems that the dependence of the electrical properties of the Pt/BST/Pt capacitors on the RTA condition is related to the oxygen vacancies in BST thin films. In order to clarify the relation between the oxygen vacancies and the electrical properties of Pt/BST/Pt capacitors, we have examined the two different annealing methods. One annealing method was performed in $O_2$ gas and the other was done in $O_2$-plasma at the same condition of 450$^{\circ}C$, 20 mtorr. It was found that the leakage current densities of $O_2$-plasma annealed capacitor were much lower than those of $O_2$ annealed capacitor. The dielectric constants of $O_2$ annealed capacitor decreased about 14% comparing with those of as-deposited. In contrast, there was no decrease in the dielectric constant of $O_2$-plasma annealed. These results indicate that $O_2$-plasma annealing is very effective in compensation the oxygen vacancies in BST thin films. It can be also concluded that the oxygen vacancies greatly affect the electrical properties of Pt/BST/Pt capacitors.

• Economic and Environmental Geology
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• v.27 no.1
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• pp.29-39
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• 1994

Gabbroic rocks in which titanomagnetite orebodies are embedded were emplaced in Precambrian metasedimentary rocks. Hornblende K-Ar ages for equigranula and gneissic gabbros were obtained to be $1021.8{\pm}14.5$ Ma and $1468.4{\pm}20.8$ Ma, respectively. Biotite-granite has an age of 116.4 Ma, which has corresponded to Daebo granite. Amphibole minerals of the gabbroic rock and the magnetite orebodies belong to calcic amphibole group such as ferroan pargasite, pargasite, and ferro-pargasite. The gabbroic rocks have unusually high content of $TiO_2$ ranging from 0.88 to 6.03 wt.% with an average value of 3.46 wt.% as compared to normal gabbroic rock with 1.32 wt.% in $TiO_2$. Incompatible elements such as Ba and Sr of the gabbros are negatively correlated with $SiO_2$. In contrast, Co and Cr have a positive correlation with $SiO_2$, suggesting a normal differentiation trend of gabbroic magma.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$increases in C1$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinity of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$ increases in Cl$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystalliility of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$ only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.