• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.22-22
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.47-47
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• 2000

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.115-120
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• 2004

Perovskite barium-strontium titanate, $(Ba, Sr)TiO_3$ was prepared and effects of $Sb_2$O$_3$ additives on its PTCR properties were investigated. $The (Ba,Sr)TiO_3$ with 0.05～0.25 mol% $Sb_2$$O_3$ showed semiconducting PTCR behavior and anomalous grain growth was also observed when it was sintered above $1330^{\circ}C$. It was considered that charge compensation by doping 8b203 as well as abnormal grain growth by sintering lead to resistivity reduction from insulating to semiconducting transition.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.410-415
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• 1999

$Ba_{1-x}Sr_xTiO_3$ thin films with various ratio of Sr (X = 0.4, 0.5, 0.6) were grown $Pt/TiN/SiO_2/Si$ subastrate by RF magnetron sputtering deposition. As, Ag, and Cu films were deposited on $Ba_{1-x}Sr_xTiO_3$ thin films as top electrodes by using a thermal evaporator. The electrical properties of $Ba_{1-x}Sr_xTiO_3$ thin films for various compositions were characterized and the physical properties at interface between $Ba_{1-x}Sr_xTiO_3$ thin films and top electrodes were evaluated in terms of the work function difference. At x =0.5, the degradation of capacitance is lower to the other compositions. As negative biasapplied, the specimen with Cu top electrode has board saturation region and low leakage current since work function of Cu is bigger than other electrodes.$ Ba_{0.5}Sr_{0.5}TiO_3$ thin films with Cu top electrode, the dielectric constant was measured to the value of 354 at 1 kHz and the leakage current was obtained to the value of $5.26\times10^{-6}A/cm2$ at the forward bias of 2 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.37-40
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• 1998

(Ba.Sr)TiO$_3$(BST) ceramics were fabricated with different Ba/Sr ratios and the str dielectric properties of the BST bulk ceramics were investigated. As the Ba/sr ratios dielectric constant decreased. (Ba$_{0.7}$Sr$_{0.3}$)TiO$_3$ (BST(70/30)) showed a maximum dielec value of $\varepsilon$$_{r}$=8.856, this showed that the decrease of Ba/Sr ratios had made BST thin dielectrics. Targets were fabricated and made into film by PLD process and the thin film by PLD process have good stoichiometry with the targets.rgets.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.180-182
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• 2004

Polycrystalline $BaTiO_3/SrTiO_3$ powder was prepared by sol-gel process and the multilayered thick films were prepared on the $Al_2O_3$ substrates by screen printing method. The films were sintered at $1400^{\circ}C$ for 2 hours in the air. The structural and dielectric properties were investigated, The X-ray diffraction (XRD) patterns indicate that the BST phase and porocity were formed in the interface of $BaTiO_3/SrTiO_3$ multilayered thick films. The dielectric constant and the dielectric loss of the BT/ST/BT/ST multilayered thick films were about 247 and 0.84% at 1MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.693-696
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• 2001

The (Ba$_{0.3}$Bi$_{0.3}$Sr$_{0.4}$)TiO$_3$[BBST] ceramics were prepared by conventional mixed oxide method. The structural properties of the BBST ceramics with sintering temperature were investigated by XRD, SEM, EDS. In the case of BBST ceramics sintered at 1150~135$0^{\circ}C$, the $Ba_{0.5}$Sr$_{0.5}$TiO$_3$and SrBi$_4$Ti$_4$O$_{15}$ phase were coexisted. The 2$\theta$ value of the BST (110) peaks were shifted to the lower degree at the sintering temperature of 130$0^{\circ}C$ and 135$0^{\circ}C$. The grains of the BBST ceramics sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$ were not appeared. Increasing the sintering temperature, the densities of the BBST ceramics were increased. In the BBST ceramics sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$, the mole ratio of Bi was decreased.d.ed.d.d.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}Sr_{0.4}TiO_{3}(BST)$ films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}Sr_{x}TiO_{3}$ (x = 0.1 - 0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}Sr_{0.3}TiO_{3}$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.56-62
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• 1999

In this study, (Ba, Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as rf power, dc bias voltage, and chamber pressure. The etch rate was 56 nm/min under $Cl_2$/($Cl_2$+Ar) gas mixing ratio of 0.2, rf power of 600 W, dc bias voltage of 250 V, and chamber pressure of 5 mTorr. At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba, Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS). Ba is removed by chemical reaction between Sr and Cl to remove Sr. Ti is removed by chemical reaction such as $TiCl_4$ with ease. The results of secondary ion mass spectrometer (SIMS) analysis compared with the results of XPS analysis and the results were the same.

• Journal of the Microelectronics and Packaging Society
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• v.3 no.1
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• pp.25-32
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• 1996

본 연구에서는 BaTiO3에 Sr과 Pb를 치환시켜TiO3 조성의 세라믹 유전체를 제조한 후 페로브스카이트형 Ba(Cu, Mo)O3를 저융점 flux 로 첨가하여 120$0^{\circ}C$ 이하의 여러온도에 서 소결을 행하였으며 flux 첨가량의 변화에 따른 소결거동 및 유전 특성의변화를 조사하였 다. 이러한 저온 소결용 유전체 세라믹스가 MLCC의 응용시 Pt-Pd계의합금을 내부전극으로 사용가능성을 검토하였다. Flux를 4mol%첨가한 TiO3-0.04Ba(Cu,Mo)O3 조성의 유전체는 120$0^{\circ}C$의 온도에서 2시간 소결했을 경우 소결밀도는 이론밀도의 95% 에 근접하였으며 이때 의 비유전율은 8000이상을 나타내었다. 이러한 소결 온도의 감소는 저융점인 ba(Cu,Mo)O3 계의 flux가 첨가되면서 비교적 낮은 온도에서 액상을 형성하여 소결을 촉진시켰기 때문으 로 사료된다.