• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제12회 학술발표회 논문개요집
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• pp.207-208
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• 1997

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.72-72
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• 1999

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2003년도 international symposium on advanced powder metallurgy
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• pp.135-136
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• 2003

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 춘계학술발표회
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• pp.143-143
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• 1993

• 한국재료학회지
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• 제21권4호
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• pp.216-219
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• 2011

Perovskite manganites such as $RE_{1-x}A_xMnO_3$ (RE = rare earth, A = Ca, Sr, Ba) have been the subject of intense research in the last few years, ever since the discovery that these systems demonstrate colossal magnetoresistance (CMR). The CMR is usually explained with the double-exchange (DE) mechanism, and CMR materials have potential applications for magnetic switching, recording devices, and more. However, the intrinsic CMR effect is usually found under the conditions of a magnetic field of several Teslas and a narrow temperature range near the Curie temperature ($T_c$). This magnetic field and temperature range make practical applications impossible. Recently, another type of MR, called the low-field magnetoresistance(LFMR), has also been a research focus. This MR is typically found in polycrystalline half-metallic ferromagnets, and is associated with the spin-dependent charge transport across grain boundaries. Composites with compositions $La_{0.7}(Ca_{1-x}Sr_x)_{0.3}MnO_3)]_{0.99}/(BaTiO_3)_{0.01}$ $[(LCSMO)_{0.99}/(BTO)_{0.01}]$were prepared with different Sr doping levels x by a standard ceramic technique, and their electrical transport and magnetoresistance (MR) properties were investigated. The structure and morphology of the composites were studied by X-ray diffraction (XRD) and scanning electronic microscopy (SEM). BTO peaks could not be found in the XRD pattern because the amount of BTO in the composites was too small. As the content of x decreased, the crystal structure changed from orthorhombic to rhombohedral. This change can be explained by the fact that the crystal structure of pure LCMO is orthorhombic and the crystal structure of pure LSMO is rhombohedral. The SEM results indicate that LCSMO and BTO coexist in the composites and BTO mostly segregates at the grain boundaries of LCSMO, which are in accordance with the results of the magnetic measurements. The resistivity of all the composites was measured in the range of 90-400K at 0T, 0.5T magnetic field. The result indicates that the MR of the composites increases systematically as the Ca concentration increases, although the transition temperature $T_c$ shifts to a lower range.

• Journal of Electrical Engineering and Technology
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• 제2권3호
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• pp.391-395
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• 2007

MgO enhanced $(Ba_{0.6}Sr_{0.4})$ $TiO_3$ thick films have been fabricated by a tape casting and firing method for tunable devices on the microwave frequency band. In order to improve ferroelectric properties, the composite thick films enhanced with MgO on BST have been asymmetrically annealed by a focused halogen beam method. Dielectric constants of composite thick films are changed from 1050 to 1300 at 100 kHz after 60 s and 150 s annealing by the focused halogen beam. Even though no prominent changes were previously observed from the thick films before and after annealing in terms of chemical composition and surface morphology, it is clear that the average particle size of the thick films calculated by Scherrer's formula were increased by annealing. Furthermore, a strong correlation between particle size and dielectric constant of the composite thick films has been observed; dielectric constant increases with increased particle size. This has been attributed to the increased volume of ferroelectric domain due to increased particle sizes. As a result, the tuning range was improved by halogen beam annealing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.455-458
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• 2001

The thin films of high pemitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)$TiO_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/$SiO_2/Si$ substrate at 4,000 [rpm] for 10 seconds. The devices of BST thin films to composite $(Ba_{0.7},Sr_{0.3})TiO_3$ were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_2/Si$ substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$, $3800[\AA]$. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency l[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.455-458
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/SiO$_2$/Si substrate at 4,700 [rpm] for 10 seconds. The devices of BST thin films to composite (Ba$\_$0.7/Sr$\_$0.3/)TiO$_3$ were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• The Korean Journal of Ceramics
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• 제6권4호
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• pp.333-338
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• 2000

$Ba_{0.7}Sr_{0.3}TiO_3$(BST) thin films were deposited simultaneously on various electrodes and buffers by the sputtering technique. When the substrate temperature was varied, the BST thin film on each electrode showed good crystallinity above $550^{\circ}C$ as revealed by X-ray diffraction measurements. The surface morphology, determined by atomic force microscopy, indicated that the roughness of BST thin films on $RuO_2$was substrate dependent. However, BST thin films on Ru electrodes are smoother and showed no substrate dependence, probably because the precursor surface diffusion length was greater than the sinusoidal perturbations of the wavelength.

• ETRI Journal
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• 제27권6호
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• pp.677-684
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• 2005

A phased array antenna was fabricated using four-element ferroelectric phase shifters with a coplanar waveguide (CPW) transmission line structure based on a $Ba_{0.6}Sr_{0.4}TiO_3(BST)/MgO$ structure. Epitaxial BST films were deposited on MgO (001) substrates by pulsed laser deposition. To attain the large differential phase shift and small losses for a ferroelectric CPW phase shifter, an impedance-matching-part adding technique between the effective transmission line and connecting cable was used. The return loss and insertion loss for this techniqueadapted BST CPW device were improved with respect to those for a normal BST CPW device. For an X-band phased array antenna system consisting of ferroelectric BST CPW phase shifters, power divider, dc block, patch antenna, and programmed dc power, the steering beam could be tilted by $15^{\circ}$ in either direction.