• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.11a
• /
• pp.57-57
• /
• 1998

• Journal of the Korean Ceramic Society
• /
• v.22 no.3
• /
• pp.13-18
• /
• 1985

Semiconductive $Ba_{0.9}Sr_{0.1}TiO_3$ was prepared by both the Calcining of mixed Oxides (C. M. O) and the Molten Salt Synthesis(M.S.S) methods to investigate the PTCR effects. In the Molten Salt Synthesis method the temperature of calcination for Synthesis of $BaTiO_3$ could be lowered from 110$0^{\circ}C$ to 80$0^{\circ}C$. The M.S.S Specimens had smaller grain size and more homogeneous size distribution at the same sintering temperature as compared with the C. M. O specimens. The M. S. S. specimens showed greater PTCR effects and current variations in the time vs. current charac-teristics than those of C. M. O Specimens.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.424-424
• /
• 2013

Ce3+, Sm3+, Eu3+, Tb3+ 등 희토류를 도핑한 여러 종류의 형광체는 백색 LED (white light-emitting diode), 전계방출표시소자(field emission display), 플라즈마디스플레이패널(plasma display panel), 약물 운송(drug delivery) 등 다양한 분야에서 응용되고 있다. 최근에는 졸-겔 방법(sol-gel method)을 이용하여Y2SiO5, Y3-XGdxAl5O12, SrAl2O4 등 여러 종류의 호스트 물질을 합성하여 형광체의 특성을 분석하는 연구가 활발히 진행되고 있다. 이러한 졸-겔 방법은 비교적 낮은 온도에서 간단한 공정으로 좋은 균질성과 높은 생산성을 갖도록 형광체를 제작할 수 있는 장점을 가지고 있다. 이에 본 연구에서는 졸-겔 방법을 이용하여 BaGd2TiO13구조를 제작하였고, 이러한 구조적, 광학적 특성을 분석하기 위하여 열분석기(thermal analyzer), 전계방출형주사전자현미경(field emission scanning electron microscopy), 투과전자현미경(field emission transmission electron microscopy)을 이용하였다. 이러한 졸-겔 방법을 이용하여 제작한 BaGd2TiO13 구조의 형광체 적용 연구를 통한 디스플레이 및 백색 LED 응용에 유용할 것으로 기대된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05b
• /
• pp.42-45
• /
• 2001

The high permittivity are applied to DRAM and FRAM. (Ba,Sr)$TiO_3$ (EST) thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on $Pt/SiO_2/Si$ substrate at 4000 [rpm] for 10 seconds in a time coating. Coated specimens were dried at $90[^{\circ}C]$ for 5 minutes. Coating process was repeated from 3 times to 5 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2600-2800[$\AA$] in 3 times. Dielectric constant of thin films was little decreased at 1[KHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current was stable When the applied voltage was 0~3[V] Leakage current was $10^{9}\sim10^{11}$[A] at 0~3[V].

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.9
• /
• pp.1609-1613
• /
• 2007

(Ba,Sr,Ca)$TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-, Sr- and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectirc properties were investigated for various $Dy_2O_3$ doping contents. As a result of thermal analysis, the exothermic peak was observed at around 670^{\circ}C $ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size of the specimens decreased with increasing amount of $Dy_2O_3$. The average grain size and thickness of the BSCT specimens doped with 0.1 mol% $Dy_2O_3$ were approximately $1.9{\mu}m$ and $70{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss increased with increasing amount of $Dy_2O_3$, the values of the BSCT thick films doped with 0.1 mol% $Dy_2O_3$ were 3697 and 0.4% at 1 kHz, respectively. The leakage current densities in all BSCT thick films were less than $10^{-9}A/cm^2$ at the applied electric field range of 0-20 kV/cm.

• Journal of the Korean Ceramic Society
• /
• v.28 no.11
• /
• pp.935-941
• /
• 1991

Effects of calcination process and ZrO2 addition on the electrical properties of [(Ba0.82Sr0.08Ca0.1)O]m(Ti1-$\chi$Zr$\chi$)O2 ceramics have been investigated. With the variation of A/B-site ratio m of the dielectric formulations, sintering behavior and the resistivity after sintering in a reducing atmosphere have been affected by the calcination process. When the dielectric formulations of m=1.01 were sintered in a reducing atmosphere, the room-temperature resitivity of 109 {{{{ OMEGA }}.cm was obtained for samples processed with two-step calcination, which was much lower than 1012 {{{{ OMEGA }}.cm of samples calcined once. It was confirmed that high resistivity of Ca-doped BaTiO3 ceramics, after sintering in a reducing atmosphere, is maintained by acceptor-like behavior of CaTi" which is formed by Ca substitution to Ti-site. It was also found out that the critical amount of B-site Ca substitution for reduction inhibition of BaTiO3 is around 0.005 mol. With the increasing amount of ZrO2 addition to dielectric formulations, Curie peak was depressed and Curie temperature was lowered due to the enhanced diffuse phase transition.tion.

• Journal of the Korean Ceramic Society
• /
• v.39 no.1
• /
• pp.16-20
• /
• 2002

Semiconducting (Ba.Sr)TiO$_3$ceramic device, which shows the PTCR effect, has been usually used as a current limiter. In this case, the device should endure the condition under the high electric field. In this study, the dynamic electrical properties of the PTCR device under high voltage has been evaluated. Two different formulated powders were used and the sintered bodies exhibited the different grain size and porosity. The wide range of characterization such as complex impedance spectroscopy, microstructure, I-V characteristics and voltage dependence of resistivity of the samples were performed. The PTCR effect of the specimen containing coarse grains was very sensitively dependent on the AC electric field, showing that it was inversely pro-portional to the grain boundary potential barrier. The withstanding voltage was proportional to the potential barrier of grain boundary.

• Journal of the Korean Ceramic Society
• /
• v.37 no.11
• /
• pp.1126-1129
• /
• 2000

The crystallographic orientations of $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) thin film deposited by a metal-organic chemical vapor deposition on (111) textured Pt electrode were studied with a transmission electron microscopy. The fully crystallized BST thin film (50nm) has (100) and (110) preferred orientations. A high resolution transmission electron microscopy study has revealed the crystallographic orientation relationships between BST thin film and Pt electrode. These relationships explained the preferred orientation of BST film on (111) textured Pt electrode. With these results, we could represent the atomic arrangement at the BST/Pt interface.e.e.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1411-1413
• /
• 2001

The $(Ba_{0.5}Sr_{0.5})(Nb_{0.5}Ti_{0.5})O_3$ [BSNT] ceramics were prepared by conventional mixed oxide method. The structural properties of the BSNT ceramics with sintering temperature were investigated by XRD, SEM, EDS. Increasing the sintering temperature, diffraction intensity of the BST(110) peak was increased. The average grain size of BSNT ceramics were increased with sintering temperature. In the case of BSNT ceramics sintered at 1550$^{\circ}C$, the grain was uniform and the pore was not existed. Increasing the sintering temperature from 1400$^{\circ}C$ to 1500$^{\circ}C$, the amount of Nb and Sr were decreased. The density of BSNT ceramics sintered at 1550$^{\circ}C$ was $1.125g/cm^2$.

• Journal of the Korean Chemical Society
• /
• v.39 no.10
• /
• pp.806-811
• /
• 1995

The electrical properties for $(Ba,Sr)_{1-x}Y_xTiO_3$(x=0.001∼0.009, BSYT) with a positive temperature coefficient of resistivity(PTCR) effect were investigated. The BSYT powder was prepared by oxalate coprecipitation method. It was found that the large PTCR effect was appeared up to 0.3 mol% and decreased above 0.5 mol% of the yttrium concentration. The plot of temperature vs. $1{\varepsilon}$m(T) above Curie temperature($T_c$) was agreed with Curie-Weiss law. The potential barrier calculated from measured resistivity and dielectric constant of specimens was high up to 0.3 mol% and reduced above 0.5 mol% of yttrium concentration as the curve of PTCR effect.