• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.236-239
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• 2000

Both the X-ray diffraction data of the normal direction in the sample orientation and the pole figure data of three reflections, (111), (200) and (220), were used to do the Rietveld refinement for the copper sheet prepared by a cold rolling process. The agreement between calculated and observed patterns was not satisfactory, which was attributed to the preferred orientation effect of the copper sheet. The Rietveld refinement for the copper sheet could be done successfully by applying the pole density of each reflection obtained from the corresponding inverse pole figure to the X-ray diffraction data of the normal direction. The R-weighted pattern, $R_{wp}$ was 12.99% and the goodness-of-fit indicator, S, was 3.68.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.787-791
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• 2015

In this paper, the growing orientation of PMN-PT single crystal is analyzed using the Laue-Back Reflection Method. Two kinds of PMN-PT single crystals are grown using the Bridgman growing method in the [001] and [111] directions and their the Laue photographs are simulated assuming cubic crystal systems. From the comparison between simulation and test results, it can be concluded that the single crystals are grown in the desired crystal orientations.

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.43-43
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• 2014

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.528-532
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• 1999

Y$_2$O$_3$films were grown on SiO$_2$-covered Si(111), and hydrogen-terminated Si(111), and hydrogen-terminated Si(111) substrates at 50$0^{\circ}C$ by ultrahigh vacuum ionized cluster beam deposition (UHV-ICB). The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high-resolution transmission electron microscopy(HREM). The TED results show that the $Y_2$O$_3$grown on the SiO$_2$-Si has the epitaxial relationship of (11-1)Y$_2$O$_3$∥(111)Si and [-110]Y$_2$O$_3$∥[-110]Si. The film on the H-Si substrate contains YS\ulcorner and amorphous YSi\ulcornerO\ulcorner layers at the interface, having the orientation relationship each other. For the YSi\ulcorner and the Si substrate, the relationship is (0001)YSi\ulcorner∥(111)Si and [1-210]YSi\ulcorner∥∥[-110]Si. For the $Y_2$O$_3$and the YSi\ulcorner ; the relationship is as follows: (11-1)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner(111)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner. Explanation is given to describe the formation mechanisms of the interfacial phases of SiO\ulcorner, YSi\ulcornerO\ulcorner and YSi\ulcorner. It is shown that the crystallinity of the $Y_2$O$_3$film on the SiO$_2$-Si(111) is better than that of $Y_2$O$_3$on H-Si(111).

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.172-172
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• 2012

A Pt-skin $Pt_3Ni$(111) surface was reported to show high catalytic activity. In this study, we investigated the magnetic properties and electronic structures of the various oriented surfaces of bulk-terminated and Pt-segregated $Pt_3Ni$ by using a first-principles calculation method. The magnetic moments of Pt and Ni are appreciably enhanced at the bulk-terminated surfaces compared to the corresponding bulk values, whereas the magnetic moment of Pt on the Pt-segregated $Pt_3Ni$(111) surface is just slightly enhanced because of the reduced number of Ni neighboring atoms. Spin-decomposed density of states shows that the dz2 orbital plays a dominant role in determining the magnetic moments of Pt atoms in the different orientations. The lowering of the d-band center energy (-2.22 eV to -2.46 eV to -2.51 eV to -2.65 eV) in the sequence of bulk-terminated (100), (110), (111), and Pt-segregated (111) may explain the observed dependence of catalytic activity on surface orientation. Our d-band center calculation suggests that an observed enhanced catalytic activity of a $Pt_3Ni$(111) surface originates from the Pt-segregation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.81-84
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• 1995

A reliable bonding between two silicon wafers, regularly grooved and non-grooved, was done by the direct boning technology, It is Presented that high structural duality was realized not only at the bended interface but in the bulk, commensurate with the filling of artificial grooves, which would be attributed to the dislocation-gettering capability of groove free-surfaces during annealing. The groove filling would be explained with mass-transport phenomena assisted by the dislocation movement from initial contact boundaries toward groove surfaces. Intrinsic voids can be easily removed by aid of the grooves. The proposed method yielded also an intimate bonding not only between {111} wafers strongly misoriented and slightly inclined to {111} basal plane but even between {111} and {100} orientation wafers.

• Transactions of Materials Processing
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• v.3 no.4
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• pp.392-400
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• 1994

The formation of preferred orientations in the cold rolling texture of the Inconel 690 sheets was studied by the x-ray texture measurements and TEM observations. The increasing {220} pole intensity in the plane normal at the higher reductions was related to the {110}<112> texture component. The rolling texture of the Inconel 690 was the pure metal type which could be described by {112}<111>, {123}<634> and {110}<112> orientations. The dislocation cells were found in the near {110}<112> oriented grains. The onset of deformation twins in the {112}<111> oriented grains caused the weakening of {112}<111> and the development of {552}<115> in the rolling texture.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.647-651
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• 2016

SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of $10^4Pa$ using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature ($T_{dep}$) range of 1150 - 1422 K. At $T_{dep}=1262K$, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate ($R_{dep}$) was $220{\mu}m\;h^{-1}$ at $T_{dep}=1262K$.

• Korean Journal of Crystallography
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• v.12 no.4
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• pp.233-238
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• 2001

X-ray microdiffraction which uses x-ray beam focused down to a micron size from synchrotron radiation sources allow precision measurements of local orientation and strain variations in polycrystalline materials. Using x-ray microdiffraction setup at Pohang Light Source, we investigated the tex-ture of Cu interconnects with various widths on Si wafer by collecting Laue images and focused to about 2×3㎛ ² in size. Our results show that 1㎛ wide Cu interconnect had grains in rather ran- dom orientation. On the other hand the 20㎛ wide interconnects showed a 〈111〉fiber texture near the center. The grains were 2∼5㎛ long at the 1㎛ wide interconnect and 6∼8㎛ in size at the 20㎛ wide interconnect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.133-137
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• 1998

$(Pb_{0.72}La_{0.28})Ti_{0.93}O_3(PLT(28))$ thin films were fabricated by pulsed laser deposition. PLT films deposited on $Pt/Ti/SiO_2/Si$ at $600^{\circ}C$ had a preferred orientation in (111) plane and at $550^{\circ}C$ had a (100) preferred orientation. We found that (111) preferred oriented films had well grown normal to substrate surface. This PLT(28) thin films of $1{\mu}m$ thickness had dielectric properties of ${\varepsilon}_r$=1300, dielectric $loss{\fallingdotseq}0.03 $. and had charge storage density of 10 [${\mu}C/cm^2$] and leakage current density of less than $10^{-6}[A/cm^2]$ at 100[kV/cm]. These results indicated that the PLT(28) thin films fabricated by pulsed laser deposition are suitable for DRAM capacitor application.