• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.27-32
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• 2001

The effect of $V_2O_5$, a donor-type dopant on the degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was compared with Ta$_2$O$_{5}$ doped ($Zr_{0.8}, Sn_{0.2})TiO_4$ in terms of microstructure, electrical conductivity, and oxidation state of the dopant. It is well known that the addition of the donor type species such as $Ta_2O_5,Nb_2O_5, Sb_2O_5, WO_{3}$, increases the quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$due to decrease the oxygen vacancy concentration. Unlike other dopants, however, the addition of $V_2O_5$ decreased the quality factor. The degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was resulted from the formation of grain boundary phase and $V_2O_5$rich fiber shaped secondary phase, and the increasing the oxygen vacancy concentration due to unstability of oxidation state of vanadium ions in ($Zr_{0.8}, Sn_{0.2})TiO_4$ceramic.c.

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.65-73
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• 1996

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.181-184
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• 1993

Microwave characteristics of the system (Zr, Sn)$TiO_4$, ceramics within composition range X between 0.2 and 0.35 were investigated at 8GHz. For the improvement properties of (Zr, Sn)$TiO_4$, system, $Ta_2O_5$ and $WO_3$ addition in the range of 0.5 to 2.0wt% were investigated.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.915-922
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• 1999

Microwave dielectric properties and far infrared reflectivity spectra of the (Zr0.8Sn0.2)TiO4 ceramics were inves-tigated with the various cooling rate. Dielectric constant was nearly same value while the unloaded Q value was largely affected by cooling rate. The Q.f of 42,140 at 7 GHz was obtained for the specimens with cooling rate of 1$^{\circ}C$/min. The effect of the cooling rate on the change of the ionic the electronic polarization and the intrinsic microwave loss of the specimens were investigated by the infrared reflectivity spectra from 50 to 4000cm-1 which were calculated by Kramers-Kroning analysis and the classical oscillator model. The relative tendency of microwave dielectric properties of the specimens calculated from the relfectivity data were in good agreement with the results by the post resonant method.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1041-1046
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• 1999

(Zr(sub)0.8Sn(sub)0.2)$TiO_4$세라믹스와 소결조제로서 ($B_2$$O_3$.Li$_2$O)의 첨가에 따른 마이크로파 유전특성 및 미세구조에 미치는 영향에 대하여 연구하였다. 1.0 mol.% $Sb_2$O(sub)5를 첨가하고 130$0^{\circ}C$에서 5시간 소결한 (Zr(sub)0.8Sn(sub)0.2)$TiO_4$세라믹스의 경우 ($B_2$$O_3$.Li$_2$O)첨가량 증가에 따라 치밀화 및 결정립 성장에 의해 유전상수와 Q.f값은 증가하여 첨가량이 0.35wt.%에서 최대값인 38과 59,000을 각각 나타내었으며, 0.50wt.% 이상 첨가한 경우에서는 제 2상의 생성으로 인하여 감소하였다. 1.0 mol% Sb$_2$O(sub)5와 0.35wt.% ($B_2$$O_3$.$Li_2$O)를 첨가한 (Zr(sub)0.8Sn(sub)0.2)TiO$_4$세라믹스를 125$0^{\circ}C$와 135$0^{\circ}C$에서 5시간 소결한 경우에는 각각 미반응 TiO$_2$의 존재와 과대입자성장에 의한 결정립내기공의 생성으로 인하여 마이크로파 유전특성은 저하되었다.

• Journal of the Microelectronics and Packaging Society
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• v.2 no.2
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• pp.31-40
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• 1995

Donor dopant로 WO3, Ta2O5 및 Nb2O5를 첨가한 Zr0.8Sn0.2TiO4 세라믹스의 유전상수 $\varepsilon$r 품 질계수 Q 및 공진주파수의 온도계수 rf에 대하여 연구하였다. 139$0^{\circ}C$에서 32시간 소결시 donor dopant 첨가량에 따른 ZST의 유전상수는 소결밀도의 변화 거동과 잘 일치하였다. 5.5 GHz에서 측정 한 ZST의 품질계수 Q는 ~0.5 mol% WO3 Ta2O5 및 Nb2O5 첨가에 의해 6800에서 8500 정도로 증가 하였다. ZST의 $\tau$f는 0.3 mol%까지의 WO3 첨가량 증가에 따라 0 ppm/$^{\circ}C$에서 -4.6 ppm/$^{\circ}C$까지 음 의 값으로 직선적으로 감소하였으며 0.4 mol% 범위의 Ta2O5 및 Nb2O5 첨가에 의해 -7 ppm/$^{\circ}C$ 까지 직선적으로 감소하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.123-123
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• 1992

• Journal of the Korean Ceramic Society
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• v.36 no.11
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• pp.1266-1273
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.158-158
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• 1996

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.719-725
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• 1995

ZST powders were synthesized by coprecipitation of (Zr4+, Ti4+)-hydroxide in the presence of SnO2 particles. Zn(NO3)2 was used as a sintering additive, and according to the adding sequence, sintering and dielectric properties were investigated. Sintered densities of ZST prepared by adding Zn(NO3)2 before calcination were a little higher than those added after calcination, and dielectric properties of the specimen added by Zn(NO3)2 after calcination were better (sintered at 125$0^{\circ}C$/2 h ; Q$\times$f(GHz)=49, 000, $\varepsilon$r=41) than before calcination (Q$\times$f(GHz)=42, 000, $\varepsilon$r=39.5). Through the observation of TEM, it was identified that the cause was due to the difference of the degree of Zn2+ diffusion into grains. With increasing sintering time from 2 to 8 hrs, grain size was doubled and dielectric properties were somewhat deteriorated.