• 한국수소및신에너지학회논문집
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• 제22권1호
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• pp.60-68
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• 2011

[ $ZrO_2-TiO_2$ ]binary oxides with various Zr:Ti molar ratios were prepared by sol-gel method and Nafion$^{(R)}$/$ZrO_2-TiO_2$ composite membranes were fabricated for proton exchange membrane fuel cells (PEMFCs) at high temperature and low humidity. Water uptake, Ion exchange capacity (IEC), and proton conductivity of Nafion$^{(R)}$/$ZrO_2-TiO_2$ composite membranes were characterized and these composite membranes were tested in a single cell at $120^{\circ}C$ with various relative humidity (R.H.) conditions. The obtained results were compared with the unmodified membranes (Nafion$^{(R)}$ 112 and Recast Nafion$^{(R)}$). A Nafion$^{(R)}$/$ZrO_2-TiO_2$ composite membrane with 1:3 of Zr:Ti molar ratio showed the highest performance. The performance showed 500 mW/$cm^2$ (0.499V) at $120^{\circ}C$, 50% R. H., and 2 atm.

• 한국대기환경학회지
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• 제8권1호
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• pp.84-91
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• 1992

Hydrodesulfurization of thiophene was studied over $Ni-W/TiO_2-ZrO_2$ catalysts in a fixed bed flow reactor. The ranges of experimental conditions were at the temperatures between 200$^\circ$C and 360$^\circ$C, the pressures between 20 X $10^5$ Pa. The catalysts were reduced with the flow of 10 L/hr of $H_2$ at the temperature of 350$^\circ$C. It was found that $TiO_2-ZrO_2$ supported catalysts had similar activity to $\gamma-Al_2O_3$ supported. The largest surface areas and the highest acidity occured as the binary oxides were mixed with equal molar ratios. The HDS increased with increasing temperatures, pressures and contact times.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.