• 한국세라믹학회지
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• 제28권1호
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• pp.1-10
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• 1991

Zirconium dioxide(ZrO2) thin films have been deposited by chemical vapor deposition technique involving the application of gas mixture of ZrCl4, and H2O into silicon wafers. The relationships between the deposition rate and various reaction parameters such as the deposition time, the gas flow rate, the deposition temperature, and the composition of reactant gases were studied. The film was identified as nearly stoichiometric monoclinic ZrO2. The apparent activation energy is about 19Kcal/mole at surface chemical reaction controlled region. The deposition rate is mainly influenced by the H2O-forming reacting between CO2 and H2.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.245-251
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• 2017

Niobium doped zirconium oxide (Nb-Zr-O:NZO) thin films were fabricated on Si substrates by a sol-gel technique with an annealing temperatures of $500{\sim}1000^{\circ}C$ in air ($N_2:O_2=3:1$) for 20 minutes. It was found that the NZO film is based on tetragonal $ZrO_2$ polycrystalline structure with the Nb 5+ ion state and there is almost no diffusion of Nb or Zr to Si substrate. The relative dielectric constant for the NZO film with the Nb composition of 30 mol% and annealed at $800^{\circ}C$ was around 40. The root mean roughness was 1.02 nm. In addition, the leakage current of NZO films was as low as $10^{-6}A/cm^2$ at 4.4 V.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1334_1335
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• 2009

In this paper we have presented recent studies concerning the high performance oxide thin film transistor (TFT) with a-IGZO channel and $ZrO_2$ gate dielectrics. The a-IGZO TFT is fully fabricated at room-temperature without any thermal treatments. The $ZrO_2$ is one of the most promising high-k materials with high capacitance originated from the high dielectric constant. The a-IGZO TFT with $ZrO_2$ shows high performance exhibiting high field effect mobility of $39.82\;cm^2$/Vs and high on-current of 2.52 mA at 10V.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.132-137
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• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.14-16
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• 1995

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ co-ramic thin films were formed by spin coating method on Pt/$SiO_2$/Si substrate at 4000[rpm] for 30 [sec]. Coated specimens were dried on the hot-plate at 400[$^{\circ}C$] for 10[min]. The coating process was repeated 6 times and then sintered at temperature between 500 ~ 800[$^{\circ}C$] for 1 hour. The ferroelectric perovskite phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ thin film sintered at 700[$^{\circ}C$] for 1hour showed good dielectric constant (2133) and dielectric loss (2.2[%]) Properties. The switching voltage, switching time and leakage currents density were 3.0[V], 1.7[${\mu}$sec] , 160[pA/$\textrm{cm}^2$] repectively.

• 한국세라믹학회지
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• 제35권9호
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• pp.969-973
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• 1998

Pb(Zr, Ti)O3 (PZT) (Zr:Ti= 52: 48) thin films were prepared on MgO(100) substrates by dipping-py-rolysis process using metal naphthenates as starting materials. Thin films were fabricated by spin coating technique and the precursor films were prefired at 20$0^{\circ}C$ in air for 0.5, 1, 2, 3, and 24 h followed by final heat treatment at 75$0^{\circ}C$ for 30min. Film prefired for 24 h lost orientational properties and pole figure analysis showed the lost of the epitaxial relationship between the films and substrate while highly a/c-axis oriented thin films were obtained for the samples prefired for 1, 2, and 3h.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1712-1715
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• 2018

To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of $(Hf,\;Zr)O_2$ thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the $(Hf,\;Zr)O_2$ thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.335-337
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• 1995

In this study, $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ stock solution was made and spin-coated on the $Pt/SiO_2/Si$ substrate at 4000[rpm] for 30[sec]. Coated specimens were dried at 400[$^{\circ}C$] for 10 [min]. The coating process was repeated 4 times and then heat-treated at 500$\sim$800[$^{\circ}C$], 1 hour. The final thickness of the thin films were about 3000[A]. The crystallinity and microstructure of the thin films were investigated for varing the sintering condition. The ferroelectric perovskite' phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hours. In the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films sintered at 700[$^{\circ}C$] for 1 hour, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitors having good dielectric and electrical properties are expected for the application to the dielectric material of DRAM.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.552-555
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• 2008

The purpose of this study was to find a best condition of fabricating lead zirconate thin film by sol-gel method, especially to find mol ratio and post annealing temperature. Lead zirconate thin film was made by spin coating method. The ratios of Pb and Zr of precursors were 1:0.8, 1:1.0, and 1:1.2. Annealing temperature of films were $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$ for 1 minute. Crystal structure was observed from XRD and antiferroelectricity was observed from hysteresis curves. The optimum mol ratio of Pb:Zr is 1:0.8 and annealing temperature is $800^{\circ}C$.

• 한국세라믹학회지
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• 제36권10호
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• pp.1035-1039
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• 1999

Ferroelectric properties and reliability characteristics of(111) and (100) preferentially oriented tetragonal Pb(Zr0.2Ti0.8)O3 (PZT) thin film capacitors have been investigated as a function of the top electrode thickness. The (111) preferentially oriented film exhibits 180$^{\circ}$domain switching process with better squareness of hysterisis loop and abrupt change of small singal capacitance-voltage comparing to the (100) preferentially oriented film having 90$^{\circ}$ domain switching process. The domain swithcing process of tetragonal phase PZT is different from that of rhobohedral phase. The film with thinner top electrode shows less initial switching polarization due to less compressive stress but it exhibits better endurance characteristics due to enhancing partial switching region.