• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.256-259
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• 2009

The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this study, we investigated all of the effects of substrate temperature on the etch rate of $ZrO_2$ thin film and selectivity of $ZrO_2$ thin film over $SiO_2$ thin film in inductively coupled plasma as functions of $Cl_2$ addition in $BCl_3$/Ar plasma, RF power and dc-bias voltage based on the substrate temperature in range of $10^{\circ}C$ to $80^{\circ}C$. The elements on the surface were analyzed by x-ray photoelectron spectroscopy (XPS).

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.259-265
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• 1995

Antireflection coatings on optical lenses commertially available in domestic market are optically analyzed. Transmission spectra and reflection spectra are collected using spectrophotometers. The apparent absorption spectra around the absorption band edge are dominated by the substrate absorption. The reflection spectra and the apparent absorption spectra at visible region between 400nm and 700nm show very strong correlation to each other except a couple samples. The discrepency observed in the latters are due to an increased absorption in visible region by the substrate, which is negative effect of these samples. An antireflection coating consisted of $SiO_2/TiO_2/SiO_2/ZrO_2/Cr$ is made on c-Si substrate for spectroscopic ellispometry analysis. A film-by-film coating is accomplished and between each film deposition, ex-situ spectroscopic ellipsometry measurements are made. The analysis of the spectroscopic ellipsometry data reveals that the average film densities of $ZrO_2$ and $TiO_2$ reach only 80% of their respective packing densities and thick films are inhomogeneous along film growth direction. Discussions are made toward in-situ, real-time monitoring of the film growth so that a real-time feedback is possible to achieve a post-correction to minor deviations occured in the previous step. step.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1334_1335
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• 2009

In this paper we have presented recent studies concerning the high performance oxide thin film transistor (TFT) with a-IGZO channel and $ZrO_2$ gate dielectrics. The a-IGZO TFT is fully fabricated at room-temperature without any thermal treatments. The $ZrO_2$ is one of the most promising high-k materials with high capacitance originated from the high dielectric constant. The a-IGZO TFT with $ZrO_2$ shows high performance exhibiting high field effect mobility of $39.82\;cm^2$/Vs and high on-current of 2.52 mA at 10V.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.774-780
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• 1997

Porous low reflective coating films of SiO2.ZrO2 system were prepared from the mixed alkoxide solutions of Zr(O-nC3H7)4 and partially prehydrolyzed TEOS by the sol-gel method using the dip-coating technique. In the case of 90SiO2.10ZrO2 porous coating films with HCl and H2O content was 0.3 mole and 4 mole, 378 m2/g of the specific surface area, 0.254 cm3/g of total pore volume, 30-50$\AA$ of average pore diameter. The transmittance of 90SiO2.10ZrO2 porous coated films was 95.38% at the wavelength of 550 nm, compared with the parent glass, the transmittance was increased with 4.38%.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.132-137
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• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.63-72
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• 1998

후막 PTC를 제조하기 위하여 BaTiO3 주원료에 Sb2O3와 MnO2를 첨가한 PTC 페이 스트를 ZrO2와 BaTiO3 기판위에 인쇄한후 13$25^{\circ}C$에서 1시간 동안 소결하였다. BaTiO3 기판 위에 형성된 PTC후막은 PTCR 특성을 나타내었다. 그러나 ZrO2기판위에 인쇄된 시편의 경 우 PTCR특성이 나타나지 않았다. 이것은 ZrO2기판과 인쇄된 PTC페이스트간의 열팽창계수 차이에 의한 thermal cracking 때문에 후막 PTC 형성이 불가능함을 보여주었다.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.134-140
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• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

• Bulletin of the Korean Chemical Society
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• v.23 no.5
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.83-87
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• 2003

Zirconium oxide films have been synthesized by radio-frequency magnetron sputtering deposition on n-Si(001) substrate with metal zirconium target at variant $O_2$ partial pressures. The influences of $O_2$ partial pressures of the morphology, deposition rate, microstructure, and the dielectric constant of $ZrO_2$ have been discussed. The results show that deposition rate of $ZrO_2$ films decreases, the roughness, and the thickness of the native $SiO_2$ interlayer increases with the increase of $O_2$ partial pressure. $ZrO_2$ films synthesized at low $O_2$ partial pressure are amorphous and monoclinic polycrystalline in nanometer scale at low $O_2$ partial pressure. The relative dielectrics of $ZrO_2$ films are in the range of 12 to 25.