• 한국표면공학회지
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• 제30권5호
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• pp.333-346
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• 1997

Plasma spray processes for functional coatings of tubular SOFC ( Soild oxide Fuel Cell).consisting of air electrode, oxide electrolyte, an fuel electrode, are optimized by fully saturated fractional factorial testing. Material and electric characteristics of each coating are analtsed by the implementation of SEM and optical microscope for evaluating microstructure and porosity, X-ray diffraction method for investigating compositional change between raw powder and sprayed coating, and Van der Pauw method for measuring electrical conductivity. LSM ($La_{0.65}Sr_{0.35}MnO_3$air electrode and Ni-YSL fuel electrode coatings have porosities of around 23~30% sufficient for effective fuel and oxidant gas supply to electrochemical reaction interfaces and electrical conductivities of around 90 S/cm and 1000 S/cm, respectively, enough for acting as current collecting electrodes. YSZ($ZrO_2-8mol%Y_2O_3$) electrolyte film has a high ionic conductivities of 0.05~0.07 S/cm at $1000^{\circ}C$ in air atmosphere, but appears to be somewhat too porous to reduce the thickness. for enhancing the cell efficiency. A unit tubular SOFC has beem fabricated by the optimized plasma spray processes for each functional coating and the cell. Its electrochemical chracteristics are investigated by measuring voltage-current and power density with variation of operationg temperature, radio of fuel to air gas flowrates, and total gas flowrate of reactants.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.174-174
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• 2008

Non-volatile memories using ferroelectric-gate field-effect transistors (Fe-FETs) with a metal/ferroelectric/semiconductor gate stack (MFS-FETs) make non-destructive read operation possible. In addition, they also have features such as high switching speed, non-volatility, radiation tolerance, and high density. However, the interface reaction between ferroelectric materials and Si substrates, i.e. generation of mobile ions and short retention, make it difficult to obtain a good ferroelectric/Si interface in an MFS-FET's gate. To overcome these difficulties, Fe-FETs with a metal/ferroelectric/insulator/semiconductor gate stack (MFIS-FETs) have been proposed, where insulator as a buffer layer is inserted between ferroelectric materials and Si substrates. We prepared $SrBi_2Ta_2O_9$ (SBT) film as a ferroelectric layer and $LaZrO_x$ (LZO) film as a buffer layer on p-type (100) silicon wafer for making the MFIS-FET devices. For definition of source and drain region, phosphosilicate glass (PSG) thin film was used as a doping source of phosphorus (P). Ultimately, the n-channel ferroelectric-gate FET using the SBT/LZO/Si Structure is fabricated. To examine the ferroelectric effect of the fabricated Fe-FETs, drain current ($I_d$) versus gate voltage ($V_g$) characteristics in logarithmic scale was measured. Also, drain current ($I_d$) versus drain voltage ($V_d$) characteristics of the fabricated SBT/LZO/Si MFIS-FETs was measured according to the gate voltage variation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.543-544
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• 2006

Pentacene thin film transistors fabricated without photolithographic patterning were fabricated on the plastic substrates. Both the organic/inorganic thin films and metallic electrode were patterned by shifting the position of the shadow mask which accompanies the substrate throughout the deposition process. By using an optically transparent zirconium oxide ($ZrO_2$) as a gate insulator and octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayer (SAM) to increase the adhesion between the plastic substrate and gate insulator and the mobility with surface treatment, high-performance transistor with field effect mobility $.66\;cm^2$/V s and $I_{on}/I_{off}$>$10^5$ was formed on the plastic substrate. This technique will be applicable to all structure deposited at low temperature and suitable for an easy process for flexible display.

• 한국표면공학회지
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• 제31권4호
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• pp.209-216
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• 1998

It is well knownthat electroledd plating is the desirable surface treatment method which is being widely used to all kinds of material such as requiring corrosing resistance, wear resistance and conductivity, especially nonconductivity materials' surface plating. However, it is suggested that there are some problems that must be solved, for exaple, rate of plating, corrosion resistance, thickness of plating film etc. Therefore in this paper, when electroless nickel plating was performed on the PZT(Pb(Zr,Ti))with varying of solution composition such as NaOH, and $H_2NCH_2COOH$, the effect of the rate of plating and corrosion resistance were investigated.

• 한국표면공학회지
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• 제49권3호
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• pp.286-300
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• 2016

Pd-Ag alloy membranes have attracted a great deal of attention for their use in hydrogen purification and separation due to their high theoretical permeability, infinite selectivity and chemical compatibility with hydro-carbon containing gas streams. For commercial application, Pd-based membranes for hydrogen purification and separation need not only a high perm-selectivity but also a stable long-term durability. However, it has been difficult to fabricate thin, dense Pd-Ag alloy membranes on a porous stainless steel metal support with surface pores free and a stable diffusion barrier for preventing metallic diffusion from the porous stainless steel support. In this study, thin Pd-Ag alloy membranes were prepared by advanced Pd/Ag/Pd/Ag/Pd multi-layer sputter deposition on the modified porous stainless steel support using rough polishing/$ZrO_2$ powder filling and micro-polishing surface treatment, and following Ag up-filling heat treatment. Because the modified Pd-Ag alloy membranes using rough polishing/$ZrO_2$ powder filling method demonstrate high hydrogen permeability as well as diffusion barrier efficiency, it leads to the performance improvement in hydrogen perm-selectivity. Our membranes, therefore, are expected to be applicable to industrial fields for hydrogen purification and separation owing to enhanced functionality, durability and metal support/Pd alloy film integration.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.193-196
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• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

• 한국세라믹학회지
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• 제27권5호
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• pp.605-612
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• 1990

In Pb1-xLax(Zry, Tiz)1-x/4O3 system, it selects the composition 7/65/35 (x=7, y=65, z=35) that was reported to have eminent Pyroelectric properties, and that is sintered with PbZrO3＋0.3wt.% PbO2 atmosphere powder. From the sintered ceramic and Poly Vinyl Alcohol, the thin wafers are fabricated with 0-3connectivity, and they are researched in Pyroelectric properties and the others according to volume ratio between ceramic and polymer. It was possible to fabricate the film containing ceramic up to 80vol% in PVA polymer. The increment of PLZT ceramic volume fraction improve the pyroelectric coefficient of the composite. On Pyroelectric coefficient and the figure of merit, a little inflection caused by glass point(Tg) of PVA appeared. The degree of inflection is proportioned to the amount of PVA.

• 한국수소및신에너지학회논문집
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• 제17권2호
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• pp.204-211
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• 2006

The electrolyte in the solid oxide fuel cell must be dense enough to avoid gas leakage and thin enough to reduce the ohmic resistance. In order to manufacture the thin and dense electrolyte layer, 8 mol% $Y_2O_3$ stabilized-$ZrO_2$ (8YSZ) electrolyte layers were coated on the porous tubular substrate by the novel vacuum slurry dip-coating process. The effects of the slurry concentration, presintering temperature, and vacuum pressure on the thickness and the gas permeability of the coated electrolyte layers have been examined in the vacuum slurry coating process. The vacuum-coated electrolyte layers showed very low gas permeabilities and had thin thicknesses. The single cell with the vacuum-coated electrolyte layer indicated a good performance of $495\;mW/cm^2$, 0.7 V at $700^{\circ}C$. The experimental results show that the vacuum dip-coating process is an effective method to fabricate dense thin film on the porous tubular substrate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.339-339
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• 2012

지난 몇 년 동안, 투명 비정질 산화물 반도체는 유기 발광 다이오드, 플렉서블 전자 소자, 솔라 셀, 바이오 센서 등 많은 응용분야에 연구되고 있다. 투명 비정질 산화물 반도체 그룹들 중, 특히 비정질 IGZO 박막 트랜지스터는 비정질 상태임에도 불구하고 높은 이동도와 낮은 동작 전압으로 훌륭한 소자 특성을 보인다. 이러한 고성능의 IGZO 박막 트랜지스터는 RF 마그네트론 스퍼터링이나 pulsed laser deposition과 같은 고진공 장비를 이용하여 이미 여러 그룹에서 제작되고 발표되었다. 하지만 진공 증착 시스템은 제조 비용의 절감이나 디스플레이 패널의 대면적화에 큰 걸림돌이 되고 있고, 이러한 문제점을 극복하기 위해서 용액 공정은 하나의 해결책이 될 수 있다. 용액 공정의 가장 큰 장점으로는 저온 공정이 가능하기 때문에 글라스나 플라스틱 기판에서 대면적으로 제작할 수 있고 진공 장비가 필요없기 때문에 제조 비용을 획기적으로 절감시킬 수 있다. 본 연구에서는 high-k 게이트 절연막과 IGZO 채널 층을 용액 공정을 이용하여 박막 트랜지스터를 제작하고 그에 따른 전기적 특성을 분석하였다. IGZO의 몰 비율은 In, Ga, Zn 순으로 각각 0.2 mol, 0.1 mol, 0.1 mol로 제작하였고, high-k 게이트 절연막으로는 Al2O3, HfO2, ZrO2을 제작하였다. 또한, 용액 공정 IGZO TFT를 제작하기 전, 용액 공정 high-k 게이트 절연막 캐패시터를 제작하여 그 특성을 분석하였다. 다양한 용액 공정 high-k 게이트 절연막 중, 용액공정 HfO2를 이용한 IGZO TFT는 228.3 [mV/dec]의 subthreshold swing, 18.5 [$cm^2/V{\cdot}s$]의 유효 전계 이동도, $4.73{\times}106$의 온/오프 비율을 보여 매우 뛰어난 전기적 특성을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1030-1033
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• 2004

We herewith report for the effect of dielectric surface modification on the electrical characteristics of organic thin-film transistors (OTFTs). The kist-jm-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide ($ZrO_2$) gate dielectric layer. The OTFTs are elaborated on the flexible plastic substrates through 4-level mask process to yield a simple fabrication process. In this work, we also have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.