• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06b
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• pp.55-85
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• 1996

지르코니아 분말은 ZrO2 결정상이 온도변화에 따라 부피변화를 수반하는 상전이변태를 나타낸다. 단사정 ZrO2가 110$0^{\circ}C$에서는 정방정으로, 2$700^{\circ}C$ 내외에서는 입방정으로 결정구조가 가역적으로 변한다. 이 ZrO2에 금속산화물을 고용시키면 형석 (CaF2:Florite)형의 입방정 결정구조가 실온에서도 안정하게 존재하게 된다. 안정화제 산화물은 caO, MgO등 2가 산화물외에 3가 또는 4가의 금속산화물로서 Sc2O3, Y2O3, Sm2O3, Nd2O3, Gd2O3, Y2O3, CeO2 등이며 이들은 금속이온의 원자가가 변하기 쉬운 희토류 산화물이다. 안정화 지르코니아는 형석형 결정구조이며 결정화학적으로 보면 금속양이온이 산소이온에 대해서 정육면체형의 8배위를 하고 있다. 이때 이온반경비(양이온/음이온)에 따라 Zr+4자리와 O-2자리의 격자위치와 모양이 형성되므로 비틀어진 정육면체구조이건 이상적인 정육면체 형석구조를 이룬다. 이는 지르코니아의 결정상의 2상-3상인 부분안정화 지르코니아다결정체(PSZ : partially stabilized zirconia)이거나 단일상-2상인 정방정 지르코니아다결정체(TZP : tetragonal zirconia polycrystal)의 결정구조를 가지는데 기인한다. PSZ는 주로 MgO, CaO를 안정화제로 고용시켜 입방정 영역에서 소결하고 이를 다시 입방정과 정방정의 상 영역에서 열처리하여 입방정 입자내부에 정방정을 석출 형성시킨 것이며 TZP는 Y2O3 및 CeO2를 고용시켜 PSZ와 다르게 일반적인 상압소결한 정방정 결정상의 미립자이다. 산화지르코늄 분말은 지르콘사에서 열분해시킨 지르코늄소결.융해괴(caustic fusion clinker)를 산처리하여얻어진 지르코늄산용액(zirconyl acid solution : cloride, sulfide, nitride 등)으로부터 제조된다. 고순도 산화지르코늄은 용액 결정석출법에 의해 ZrOCl2.8H2O, 5ZrO2.3SO3.15H2O, ZrO(NO3)2.xH2O 등의 지르코늄 수화물만을 재결정화시킨 것으로부터 얻을 수 있으며 이 지르코늄염 수용액으로부터 입자미세구조를 효과적으로 제어하여 산화지르코늄 및 안정화 지르코니아 분말제조가 가능하다. 안정화 지르코니아 분말은 ZrO2와 안정화산화물의 고용을위하여 가열처리를 필요로 하며 일정온도에서 최적상태로 숙성하므로서 2가지 상(phase) 이상의 고용체를 가지게 된다. 안정화 지르코니아 분말은 고용처리온도를 낮추고 효과적으로 생성시키기 위해서는 지르코늄 및 안정화제염을 혼합하고 습식 직접합성하여 저온에서 고용체의 합해진상 영역을 생성시키는 것이다. 이는 지르코니아 원료분말의 미세구조를 제어하므로서 가능하며 이때 화학성분조성과 크기형태가 균일하게 분포된 입자분말을 얻을 수 있다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.333-333
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• 2012

In this study, we investigated morphology of nanotube and micropore on the Ti-25Nb-xHf alloys with Hf contents after anodization. Ti-25Nb-xHf ternary alloys contained from (0~15) wt.% Hf contents were manufactured by vacuum arc-melting furnace. The obtained ingots were homogenized in an argon atmosphere at $1000^{\circ}C$ for 12h and then water quenching. The specimens were cut from ingots to 3mm thickness and first ground and polished using SiC paper (grades from 100 to 2000). 2steps anodization treatments on Ti-25Nb-xHf alloys were carried out at room temperature for experiments. Micro-pore formation was performed in Ca+P mixed solution at 265V for 3min. After that, nanotube formation was in 1M $H_3PO_4$ electrolytes containing 0.8wt.% NaF solutionat 10V for 120min. Morphologies of micropore and nanotube depended on the Hf content in Ti-25Nb-xZr ternary system.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.12-16
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• 2005

The $Fe_{87}Zr_{7}B_{6}$ amorphous alloy after neutron irradiation are studied hysteresis loop and complex permeability measurements. The total integration fluence of fast neutrons is varied from $1.92{\times}10^{14}$ to $4.85{\times}10^{16}n_{f1}cm^{-2}$. After neutron irradiation, the imaginary part of complex permeability in low frequency region decreased due to the decrease of wall motion, but the permeability in high frequency region increased due to the enhancement of rotational magnetization. The measurement of hysteresis loop showed the increase of magnetic softness, related to rotational magnetization, but saturation magnetization was decreased in neutron irradiation sample.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.848-850
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• 1999

In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

• Korean Journal of Materials Research
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• v.25 no.7
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• pp.317-321
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• 2015

The effects of Nb doping on the crystal structure, microstructure, and dielectric ferroelectric and piezoelectric properties of $(Bi_{0.5}Na_{0.5})_{0.935}Ba_{0.065}Ti_{(1-x)}Nb_xO_3-0.01SrZrO_3$ (BNBTNb-SZ, with ${\chi}=0$, 0.01 and 0.02) ceramics have been investigated. X-ray diffraction patterns revealed that all ceramics have a pure perovskite structure with tetragonal symmetry. The grain size of the ceramics slightly decreased and a change in grain morphology from square to spherical shape was observed in the Nb-doped samples. The maximum dielectric constant temperature ($T_m$) increases with increasing amount of Nb; however, ferroelectric-relaxor transition temperature ($T_{F-R}$) and maximum dielectric constant (${\varepsilon}_m$) values decrease gradually. Nb addition disrupted the polarization hysteresis loops of the BNBT-SZ ceramics by leading a reduction in the remnant polarization coercive field and piezoelectric constant.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.104-109
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• 2005

To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{\circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{\circ}C$.

• Journal of the Korean Electrochemical Society
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• v.10 no.3
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• pp.184-189
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• 2007

The importance of secondary battery industry is getting excited according to the development of battery industry as a high efficiency energy supplier of electronic machine of mobile information such as mobile phone, lap-top computer, PDA. It is rasing the interest about security of safety and high efficiency of cathode material for main part of secondary lithium battery. The cathode material which has been used like $LiCoO_2,\;LiMn_2O_4,\;LiNi_xCo_yMn_zO_2,\;LiNi_xCo_yM_zO_2$ (M=Al, Zr, Mg etc.,) the most typical material is $LiCoO_2$. But it is studying the development of substitute such as efficiency amelioration of $LiCoO_2$, thetiary element, olivine element because of the capacity of $LiCoO_2$, the matter of security; especially the betterment of efficiency, security research of safety has been actively processed in domestic and overseas about surface coating treatment of active cathode which is using oxide ($M_xO_3$). This study analyses side effect of battery according to increase of surface treatment, formation of precipitation for reagent condensation, non-reagent residue of oxide ($M_xO_3$) which is remains during the surface treatment of $LiCoO_2$; conducts study of new process, the consideration of the electrochemical property to improve oxide solution of mixing rate, mixture of surface treatment, dryness, calcinations conditionetc.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.25-26
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• 1997

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.28-33
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• 2008

Lanthanum modified lead zirconate titanate ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) thin films were fabricated on indium doped tin oxide (ITO)-coated glass substrate by R.F magnetron sputtering method. The thin films were deposited at $500^{\circ}C$ and post-annealed with various temperature ($550-750^{\circ}C$) by rapid thermal annealing technique. The structure and morphology of the films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature was increased, the remnant polarization value was increased from $10.6{\mu}C/cm^2$ to $31.4{\mu}C/cm^2$, and coercive field was reduced from 79.9 kV/cm to 60.9 kV/cm. As a result of polarization endurance analysis, the remnant polarization of PLZT thin films annealed at $700^{\circ}C$ was decreased 15% after $10^9$ switching cycles using 1MHz square wave form at ${\pm}5V$.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.446-452
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• 2007

[ $(Pb_{1.1},La_{0.08})(Zr_{0.65}.Ti_{0.35})O_3$ ] thin films on the $Pt/Ti/SiO_2/Si$, $TiO_2(interlayer)/Pt/Ti/SiO_2/Si$ substrate were fabricated by the R.F. magnetron-sputtering method and considered their characteristics depending on $TiO_2$ interlayer. Changing the deposition conditions of $TiO_2$ interlayer, we obtained $TiO_2$ anatase single phase and rutile single phase. PLZT was deposited on these substrates and analyzed by x-ray diffraction(XRD) for there crystallinity and orientation. To investigate $PLZT-TiO_2$, $TiO_2-Pt$ interface, glow discharge spectrometer(GDS) analysis was carried out and we performed electrical measurements for dielectric properties of PLZT thin films. The PLZT thin film on $TiO_2$ anatase interlayer was found to have (110)-preferred orientation and 12.6 ${\mu}C/cm^2$ remaining polarization value.