• Title/Summary/Keyword: $ZrF_x$

검색결과 65건 처리시간 0.026초

Ni가 첨가된 $(Zr_{0.8}Sn_{0.2})$TiO$_4$세라믹스의 미세구조와 고주파유전성질 (Microstructure and Microwave Dielectric Properties of Ni-doped $(Zr_{0.8}Sn_{0.2})$TiO$_4$ Ceramics)

  • 이달원;남산;변재동;김명호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.59-62
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    • 1996
  • The effect of NiO addition on the microstructure and microwave dielectric properties of (Zr$_{0.8}$Sn$_{0.2}$)TiO$_4$(ZST) was investigated. With the NiO addition, a dense ZST body of density higher than 95% has been achieved in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be NiTiO$_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_{f}$decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in term of the second phase. The ZST ceramics with small amount of additive gave $\varepsilon$$_{r}$=38, Q=7000 at 7 GHz and TC$_{f}$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by previous investigation.stigation.

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ZrO2 완충층과 SBT 박막의 열처리 과정이 SrBi2Ta2O9/ZrO2/Si 구조의 계면 상태 및 강유전 특성에 미치는 영향 (The Effect of the Heat Treatment of the ZrO2 Buffer Layer and SBT Thin Film on Interfacial Conditions and Ferroelectric Properties of the SrBi2Ta2O9/ZrO2/Si Structure)

  • 오영훈;박철호;손영구
    • 한국세라믹학회지
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    • 제42권9호
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    • pp.624-630
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    • 2005
  • To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

스컬용융법에 의한 CaZrO3 : Eu3+ 형광체 합성 (Synthesis of CaZrO3 : Eu3+ phosphor by skull melting method)

  • 최현민;김영출;석정원
    • 한국결정성장학회지
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    • 제30권4호
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    • pp.131-135
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    • 2020
  • 단결정상을 가지는 CaZrO3 : Eu3+ 형광체를 스컬용융법으로 합성하였다. 합성된 형광체의 결정구조, 형태 및 광학적 특성은 XRD, SEM, UV 형광반응 및 PL을 분석하였다. 출발 원료는 CaO : ZrO2 : Eu2O3를 0.962 : 1.013 : 0.025 mol%로 하여 냉각도가니에 충진하였다. 냉각도가니는 내부 직경 120 mm, 높이 150 mm이며, 혼합된 파우더 3 kg은 3.4 MHz의 출력 주파수로 1시간 이내에 완전히 용융되어 2시간 동안 유지시킨 후 자연냉각 시켰다. XRD 측정에서는 다른 결정상은 측정되지 않았으며 페로브스카이트 구조의 정방정계로 분석되었다. 합성된 형광체는 UV 광에 의해 여기 될 수 있고 방출 스펙트럼 결과는 615 nm에서 자기 쌍극자 전이 5D07F2로 인해 CaZrO3 : Eu3+의 밝은 적색 발광이 우세하였다.

$SiN_x/Si$ 기판에 제조된 후막 PZT의 횡 압전 계수 $(e_{31,f})$ 측정 (Measurement of Effective Transverse Piezoelectric Coefficients $(e_{31,f})$ of Fabricated Thick PZT Films on $SiN_x/Si$ Substrates)

  • 전창성;박준식;이상렬;강성군;이낙규;나경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.965-968
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    • 2004
  • Effective transverse Piezoelectric Coefficients $(e_{31,f})$ of thick PZT $(Pb(Zr_{0.52}Ti{0.48}Ti_{0.48})O_3)$ films on $SiN_x/Si$ substrates were measured with PZT thicknesses and top electrode dimensions. $e_{31,f}$ is one of important Parameters characterizing Piezoelectricity of PZT films. Thick PZT films have been used as various sensors and actuators because of their high driving force and high breakdown voltage. Thick PZT films were fabricated on Pt/Ta/$SiN_x$/Si substrates using sol-gel method. Thicknesses of PZT films were $1{\mu}m$ and $1.8{\mu}m$. $|e_{31,f}|$ values of $1.8{\mu}m$-thick-PZT films were higher than those of $1{\mu}$-thick-PZT films. Maximum $|e_{31,f}|$ of $1.8{\mu}$-thick-PZT films was about $50^{\circ}C/m^2$.

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Sol-gel 압전체 박막을 이용한 각속도 센서에 대한 연구 (Study on Angular Rate Sensor using Sol-Gel PZT thin film)

  • Lee, S. H.;R. Meada;M. Esashi
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.34-34
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    • 2003
  • Piezoelectric or magnetostrictive materials, known as smart materials, have been researched widely for sensors or actuators in micro system technology. In our research, thick sol-gel lead zirconate titanate(Pb(Zr$\sub$1-x/Ti$\sub$x/)O$_3$) films were fabricated and their characteristics were investigated f3r angular rate sensor applications. The thickness of the PZT films is 1.5${\mu}$m, which is required by a vibration angular rate sensor for a good actuation and sensing. The remnant polarization of the PZT flms is 12.0 ${\mu}$C/$\textrm{cm}^2$. The electromechanical constants of PZT thin film showed the value of susceptance(B) of 4800${\mu}$ s at capacitance of 790pF. The PZT films were applied to the vibration angular rate sensor structure and the vibration of 1.78 ${\mu}$m in amplitude at the resonant frequency of 35.8㎑ was obtained by driving voltage of 5V$\sub$p-p/ of bulk piezoelectric materials with out of phase signal through voltage and inverting amplifier.

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스컬용융법에 의해 성장시킨 Co와 Pr이 첨가된 이트리아안정화큐빅지르코니아(YSZ) 단결정의 연구 (Investigation of Co- and Pr-doped yttria-stabilized cubic zirconia (YSZ) single crystal grown by skull melting method)

  • 문소이;석정원
    • 한국결정성장학회지
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    • 제24권4호
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    • pp.140-144
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    • 2014
  • Co(0.7 wt%)와 Pr(2.0, 3.5 및 5.0 wt%)이 첨가된 큐빅지르코니아($ZrO_2:Y_2O_3=50:50wt%$) 단결정을 스컬용융법으로 성장 후 $N_2$ 분위기에서 $1150^{\circ}C$로 5시간 동안 열처리 하였다. 갈색의 단결정들은 각각 어두운 갈녹색, 녹청색 또는 밝은 녹색으로 변화되었다. 열처리 전 후의 YSZ 단결정들을 직경 7.5, 두께 3 mm의 웨이퍼로 연마 하여 UV-VIS 분광광도계 및 XRD(X-ray diffraction)로 광학적 또는 구조적 특성 분석을 행하였다. $Co^{2+}$(약 589 nm: ${\Gamma}_8[^4A_2(^4F)]{\rightarrow}{\Gamma}_8+{\Gamma}_7[^4T_1(^4F)]$, 약 610 nm: ${\Gamma}_8[^4A_2(^4F)]{\rightarrow}{\Gamma}_8[^4T_1(^4F)]$, 약 661 nm: ${\Gamma}_8[^4A_2(^4F)]{\rightarrow}{\Gamma}_6[^4T_1(^4F)]$$Pr^{3+}$(약 450 nm: ${^3}H{_4}-{^3}P{_2}$, 약 473 nm: ${^3}H{_4}{\rightarrow}{^3}P{_1}$, 약 484 nm: ${^3}H{_4}{\rightarrow}{^3}P{_0}$)에 의한 흡수, 이온화에너지 및 격자상수 변화를 확인하였다.

CO2용 Pt전극/NASICON고체전해질/Carbonate (Na2CO3-K2CO3-CaCO3 계) 전극의 가스 센서제작 및 특성 (Fabrication and Sensing Properties of Pt-electrode/NASICON Solid Electrolyte/ Carbonate(Na2CO3-K2CO3-CaCO3system ) Electrode for CO2gas sensor)

  • 최진삼;배재철;방영일;이덕동;허증수
    • 한국재료학회지
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    • 제12권4호
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    • pp.269-273
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    • 2002
  • The NASICON solid electrolyte films, $Na_{1+x}Zr_2Si_xP_{3-x}O_{12}$(1.5< x < 2.3), was prepared from ceramic slurry by modified doctor-blade process. The NASICON solid electrolyte and fabricated sensors, Pt-electrode/NASICON/Carbonate$(Na_2CO_3-K_2CO_3CaCO_3\; system)$ electrode, were investigated to measure phase, microstructure and e.m.f variation for sensing $CO_2$ concentration. The uniform grain size of $2-4{\mu}m$ and major phase of sodium zirconium silicon phosphate phase, $Na_{1+x}Zr_2Si_xP_{3-x}O_{12}$was identified with X-ray diffraction patterns and scanning electron microscopy, respectively. The Nernst's slope of 84 mV/decade for $CO_2$ concentration from 500 to 8000 ppm was obtained at operating temperature of $400^{\circ}C$.

MICROSTRUCTURE AND ELECTROCHEMICAL BEHAVIORS OF EQUIATOMIC TiMoVCrZr AND Ti-RICH TiMoVCrZr HIGH-ENTROPY ALLOYS FOR METALLIC BIOMATERIALS

  • HOCHEOL SONG;SEONGI LEE;KWANGMIN LEE
    • Archives of Metallurgy and Materials
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    • 제65권4호
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    • pp.1317-1322
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    • 2020
  • The present study investigated various thermodynamic parameters, microstructures and electrochemical behaviors of TiMoVCrZr and Ti-rich TiMoVCrZr high-entropy alloys (HEAs) prepared by vacuum arc remelting. The microstructures of the alloys were analyzed using X-ray diffraction (XRD) analysis, field emission scanning electron microscopy (FE-SEM), and potentiodynamic polarization tests. The determined thermodynamic values of the Ω-parameter and the atomic size difference (δ) for the HEAs were determined to be in the range of Ω ≥ 1.1, and δ ≤ 6.6% with valance electron configuration (VEC) ≤ 5.0, suggesting the HEAs were effective at forming solid solutions. XRD patterns of the equiatomic Ti20Mo20V20Cr20Zr20 HEA revealed four phases consisting of the body centered cubic1 (BCC1), BCC2, hexagonal close-packed (HCP), and intermetallic compound Cr2Zr phases. Three phases were observed in the XRD patterns of Ti-rich Ti40Mo15V15Cr15Zr15 (BCC, HCP, and Cr2Zr) and a single BCC phase was observed in Ti-rich Ti60Mo10V10Cr10Zr10 HEAs. The backscattered-electron (BSE) images on the equiatomic Ti20Mo20V20Cr20Zr20 HEA revealed BCC and HCP phases with Cr2Zr precipitates, suggesting precipitation from the HCP solid solution during the cooling. The micro-segregation of Ti-rich Ti60Mo10V10C10Zr10 HEAs appeared to decrease remarkably. The alloying elements in the HEAs were locally present and no phase changes occurred even after additional HIP treatment. The lowest current density obtained in the polarization potential test of Ti-rich Ti40Mo15V15Cr15Zr15 HEA was 7.12×10-4 mA/cm2 was obtained. The studied TiMoVCrZr HEAs showed improved corrosion characteristics as compared to currently available joint replacement material such as ASTM F75 alloy.

Device and Piezoelectric Characteristics of Pb(Mn1/3Sb2/3) O3-PZT Ceramics for Piezoelectric Transformer

  • Sohn, Joon-Ho;Heo, Soo-Jeong;Sohn, Jeong-Ho;Lee, Joon-Hyung;Jung, Woo-Hwan;Kim, Dong-Bum;Cho, Sang-Hee
    • The Korean Journal of Ceramics
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    • 제5권2호
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    • pp.171-177
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    • 1999
  • In the $(Pb_{1-x}M_x)[(Mn_{1/3}Sb_{2/3})_{0.05}Zr_yTi_{0.95-y}]O_3$ system, where M=Ca and Sr, the piezoelectric properties were evaluated to examine the possibility of application to piezoelectric transformer. A Rosen-type piezoelectric transformer was formed, then the electrical properties of voltage step-up ratio, frequency characteristics etc. were analysed. The morphotropic phase boundary was determined to be y=0.475 in $Pb[(Mn_{1/3}Sb_{2/3})_{0.05}Zr_yTi_{0.95-y}]O_3$ system and the piezoelectric properties of this composition was kp=0.59, Qm=1600 and $\varepsilon_r$=1150. Moreover, when 1-2 mol% of Sr are substituted, enhanced piezoelectric properties of kp=0.61, Qm=1600 and $\varepsilon_r$=1400 were shown. The temperature rising (ΔT) of a piezoelectric transformer with $Pb[Mn_{1/3}Sb_{2/3})_{0.05}Zr_{0.475}Ti_{0.475})]O_3 $ composition was $10^{\circ}C$, and the voltage step-up ratio was 500 when the output voltage was 4000V, whereas the ΔT was below $3^{\circ}C$ and the resonant frequency variation ($\Delta f_r$) as a function of load resistance was below 5% when the output voltage was 2000 V. These characteristics are superior to the properties of materials, which were substituted by Ca or without substitution.

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ZrN 및 TiN 코팅된 치과교정 용 미니나사의 표면특성과 전기화학적 거동 (Surface Characteristics and Electrochemical Behaviors of TiN and ZrN Coated Orthodontic Mini-screw)

  • 김신영;문영필;박근형;조호형;김원기;손미경;최한철
    • 한국표면공학회지
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    • 제41권5호
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    • pp.232-239
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    • 2008
  • The dental orthodontic mini-screw requires good mechanical properties and high corrosion resistance for implantation in the bone. The purpose of this study was to investigate the electrochemical characteristics of TiN and ZrN coated orthodontic mini-screws, mini-screws were used for experiment. Ion plating was carried out for mini-screw using Ti and Zr coating materials with nitrogen gas. Ion plated surface of each specimen w as o bserved with f ield emission scanning e lectron microscopy ( FE-SEM), e nergy dispersive x-ray spectroscopy (EDX), and electrochemical tester. The surface of TiN and ZrN coated mini-screw were more smooth than that of other kinds of non-coated mini-screw due to dercrease of machined defects. The corrosion current density of the TiN and ZrN coated mini-screw decreased compared to non-coated sample. The corrosion potential of TiN and ZrN coated mini-screw were higher than that of non-coated mini-screw in 0.9% NaCl solution. The pitting corrosion resistance increased in the order of ZrN coated, TiN coated and non-coated wire. Pitting potential of ZrN coated mini-screw was the highest in the other specimens.