• Journal of the Korea Institute of Military Science and Technology
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• v.13 no.6
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• pp.1127-1132
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• 2010

Borosilicate glass was prepared in the composition of 81% $SiO_2$, 4% $Na_2O$, 2% $Al_2O_3$, 13% $B_2O_3$. The albite phase($NaAlSi_3O_8$) increased with the $ZrO_2$(0~10wt.%) addition. For measurement of glass transition temperature($T_g$), crystallization temperature($T_{c,max}$) measured by differential thermal analysis. The $T_g$ and $T_{c,max}$ were $510{\sim}530^{\circ}C$ $650{\sim}670^{\circ}C$, respectively. The crystallized glass was heated at various conditions(temperature, time). After nucleation at $550^{\circ}C$ for 2hours prior to crystal growth at $650^{\circ}C$ for 4hours, the resulting Vickers hardness, fracture toughness and bending strength were about $736H_v$, $1.0779MPa{\cdot}m^{1/2}$, and 493MPa, which were 17%, 45% and 149% higher than parent borosilicate glass, respectively. Crystal size and transmittance of crystallized borosilicate glass were analyzed by FE-SEM, EDX and UV-VIS-NIR spectrophotometer. Transmittance of crystallized borosilicate glass was decreased with increasing $ZrO_2$(wt%) at visible-range. The results prove that light-weight bulletproof can be fabricated by the crystallization of borosilicate glass.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.52-57
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• 2010

$BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1996.11a
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• pp.6-6
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• 1996

Ceramic based nanocomposite, in which nano-sized ceramics and metals were dispersed within matrix grains and/or at grain boundaries, were successfully fabricated in the ceramic/cerarnic and ceramic/metal composite systems such as $Al_2O_3$/SiC, $Al_2O_3$/$Si_3N_4$, MgO/SiC, mullite/SiC, $Si_3N_4/SiC, $Si_3N_4$/B, $Al_2O_3$/W, $Al_2O_3$/Mo, $Al_2O_3$/Ni and $ZrO_2$/Mo systems. In these systems, the ceramiclceramic composites were fabricated from homogeneously mixed powders, powders with thin coatings of the second phases and amorphous precursor composite powders by usual powder metallurgical methods. The ceramiclmetal nanocomposites were prepared by combination of H2 reduction of metal oxides in the early stage of sinterings and usual powder metallurgical processes. The transmission electron microscopic observation for the $Al_2O_3$/SiC nanocomposite indicated that the second phases less than 70nm were mainly located within matrix grains and the larger particles were dispersed at the grain boundaries. The similar observation was also identified for other cerarnic/ceramic and ceramiclmetal nanocornposites. The striking findings in these nanocomposites were that mechanical properties were significantly improved by the nano-sized dispersion from 5 to 10 vol% even at high temperatures. For example, the improvement in hcture strength by 2 to 5 times and in creep resistance by 2 to 4 orders was observed not only for the ceramidceramic nanocomposites but also for the ceramiclmetal nanocomposites with only 5~01%se cond phase. The newly developed silicon nitride/boron nitride nanocomposites, in which nano-sized hexagonal BN particulates with low Young's modulus and fracture strength were dispersed mainly within matrix grains, gave also the strong improvement in fracture strength and thermal shock fracture resistance. In presentation, the process-rnicro/nanostructure-properties relationship will be presented in detail. The special emphasis will be placed on the understanding of the roles of nano-sized dispersions on mechanical properties.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.35-41
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• 1999

In this study we investigated the effects of process variables on the bond strength, and its dependency upon the interfacial chemistry when the joined $ZrO_2$ toughened $Na\beta$"-alumina to $\alpha$-alumina using B$_2$$O_3$-$SiO_2$-Al$_2$$O_3$-CaO glass sealant. We observed that bond strength is mainly determined by the strength of the glass, which, in turn, depends on the glass composition established after joining reaction. Joining at $950^{\circ}C$ for 15min yielded the highest average bond strength of 66MPa. Different types of interfacial reaction seem to occur at each interface. After joining at $950^{\circ}C$ for 15min we found that Ca and Si diffuse much deeper(~15$\mu\textrm{m}$) into the $\beta$"-alumina composite than into the $\alpha$-alumina(<1$\mu\textrm{m}$) as a result of ion exchange reaction and more effective grain boundary diffusion. Thermal expansion coefficient of the glass was found to have changed more closely to those of the $\beta$"-alumina composite and $\alpha$-alumina, which put the glass under a slight compressive stress.ressive stress.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1881-1883
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• 2005

In this study, PZT thin films were fabricated using sol-gel Processing onto $Si/SiO_2/Ti/Pt$ substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}\;A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1104-1105
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• 2006

Several boride sintered bodies such as $TiB_2$, $ZrB_2$, and $SiB_6$ were previously reported. In the present study, the sinterability and physical properties of chromium boride $(CrB_2)$ containing chromium carbide $(Cr_3C_2)$ sintered bodies were investigated in order to determine its new advanced material. The samples were sintered at desired temperature for 1 hour in vacuum under a pressure by hot pressing. The relative density of sintered bodies was measured by Archimedes' method. The relative densities of $CrB_2$ addition of 0, 5, 10, 15 and 20 mass% $Cr_3C_2$ composites were 92 to 95%. The Vickers hardness of the $CrB_2$ with 10 and 15 mass% $Cr_3C_2$ composites were about 14 and 15 GPa at room temperature, respectively. The Vickers hardness at high temperature of the $CrB_2$ addition of 10 mass% $Cr_3C_2$ composite decreased with increasing measurement temperature. The Vickers hardness at 1273 K of the sample was 6 GPa. The Vickers hardness of $CrB_2$ addition of $Cr_3C_2$ composites was higher than monolithic $CrB_2$ sintered body. The powder X-ray diffraction analysis detected CrB and $B_4C$ phases in $CrB_2$ containing $Cr_3C_2$ composites.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.10a
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• pp.93-96
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• 2003

Recently, various bulk metallic glasses (BMG's) haying good mechanical and chemical properties were developed. BMG's can easily be deformed in the supercooled liquid region, via viscous flow mechanism. In our previous work, we evaluated the deformation behavior and some other basic properties of Z $r_{41.2}$ $Ti_{13.8}$C $u_{12.5}$N $i_{10}$B $e_{22.5}$ alloy. In this study, we investigated the micro forming of Z $r_{41.2}$ $Ti_{13.8}$C $u_{12.5}$N $i_{10}$B $e_{22.5}$ alloy. The process condition was chosen based on the viscosity data from TMA, and superalloy and Si wafer with micro patterns on the surface were used as forming die. The alloy showed good replication of the patterns. However, some stripe patterns, resembling scratches, appeared on the deformed alloy surface. These scratches can be reduced or eliminated by polishing before forming.ing.ore forming.ing.

• Journal of Korea Foundry Society
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• v.30 no.4
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• pp.147-150
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• 2010

An eco-friendly production technique of Al-8.6Ti-0.025C refiner was developed by melting a Al-Ti master alloy in a graphite crucible, in which the potential nucleation site, TiC effectively formed by the spontaneous in-situ reaction between excessive Ti and carbon from graphite crucible. The A3003 alloy refined by the Al-8.6Ti-0.025C showed effectively refined macrostructure and enhanced mechanical properties comparable to the commercial Al-Ti-B refiner. The effective refinement was achieved in a shorter compare to the melt-treating time commercial Al-Ti-B refiner.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.93-96
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1562-1564
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• 2003

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C,\;650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.