• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.346-346
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• 2007

압전세라믹 재료는 현재 압전 변압기, actuator, transducer, sensor, speaker 등에 광범위하게 이용이 되고 있다. 이 중에서 압전세라믹 소결체를 이용한 스피커의 제조는 가공이 까다롭고, 대형의 크기로 제작 시 소자가 깨지는 등의 많은 제약을 받고 있으며, 저음 특성이 떨어져 응용 범위가 한정되어 있다. 따라서 최근에는 이러한 단점을 극복하기 위하여 세라믹/고분자 복합체를 이용한 필름 스피커를 제작하고자 시도하고 있다. 이러한 세라믹/고분자 0-3형 압전 복합체를 이용할 경우, 제품의 경량화를 실현할 수 있고, 크기나 환경의 영향을 거의 받지 않으므로, 고기능성 스피커로의 응용에 적합할 것으로 보인다. 따라서 본 연구에서는 PZT계의 세라믹와 PVDF, PVDF-TrFE, Polyester, acrylic resin 등의 여러 고분자 물질과의 복합체를 제조하여 압전특성을 평가하였다. 본 실험은 먼저 $(Pb_{1-a-b}Ba_aCd_b)(Zr_xTi_{1-x})_{1-c-d}(Ni_{1/3}Nb_{2/3})_c(Zn_{1/3}Nb_{2/3})_dO_3$ (이하 PZT라 표기)의 최적화 조성을 선택하여, $1050^{\circ}C$에서 소결된 분말을 48시간 ball milling방법 로 약 $1{\mu}m$ 크기로 분쇄하였다. 고분자 물질들은 알맞은 용제들을 선택하여 녹였다. 그 다음 소결된 PZT분말과 고분자를 50:50, 60:40, 65:35, 70:30등의 무게 분율로 혼합하고, 분산제, 소포제 등을 첨가하여 3단 roll mill을 이용하여 충분히 분산시켜 페이스트 (Paste)를 제조하였다. 제조된 페이스트를 ITO가 코팅된 PET필름 위에 스크린 프린팅 법을 사용하여 인쇄하여 $120^{\circ}C$에서 5분간 건조하였다. 코팅된 복합체의 두께는 약 $80{\mu}m$ 정도로 측정되었다. Ag 페이스트를 이용한 상부 전극 형성에도 스크린 프린팅 법을 적용하였다. 이를 $120^{\circ}C$에서 4 kV/mm의 DC 전계로 분극 공정을 수행한 후 전기적 특성을 평가하였다. 유전특성을 조사하기 위해서 LCR meter (EDC-1620)를 사용하였고, 시편의 결정구조는 XRD (Rigaku; D/MAX-2500H)을 통해 분석하였으며, 전자현미경(SEM)을 이용하여 미세구조를 분석하였다. 압전 전하상수$(d_{33})$ 값은 APC 8000 모델을 이용하여 측정하였다. PZT의 혼합비가 증가할수록 비유전율 및 압전 전하 상수 등의 전기적 특성이 증가되었다. 또 여러 고분자 물질 중에서 PVDF-TrFE 수지가 가장 우수한 특성을 보였다. 이는 PVDF-TrFE 수지가 압전성을 나타내기 때문인 것으로 판단되었다.

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.369-376
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• 2003

Coulson (ZINDO), Mulliken $(MP2/6-31G^*)$ and Natural $(MP2/6-31G^*)$ population analyses of several large molecules were performed by the Fragment Reassociation (FR) method. The agreement between the conventional ZINDO (or conventional MP2) and FR-ZINDO (or FR-MP2) charges of these molecules was excellent. The standard deviations of the FR-ZINDO net atomic charges from the conventional ZINDO net atomic charges were 0.0008 for $C_{10}H_{22}$ (32 atoms), 0.0012 for $NH_2-C_{16}O_2H_{28}-COOH$ (53 atoms), 0.0014 for $NH_3^+-C_{16}O_2H_{28}-COOH$ (54 atoms), 0.0017 for $NH_2-C_{16}O_2H_{28}-COO^-$ (52 atoms), 0.0019 for $NH_3^+-C_{16}O_2H_{28}-COO^-$ (53 atoms), 0.0024 for a conjugated model $(O=CH-(CH=CH)_{15}-C=O-(CH=CH)_{12}-CH=CH_2)$, 118 atoms), 0.0038 for aglycoristocetin $(C_{60}N_7O_{19}H_{52}^+$, 138 atoms), 0.0023 for a polypropylene model complexed with a zirconocene catalyst $(C_{68}H-{121}Zr^+$, 190 atoms) and 0.0013 for magainin $(C_{112}N_{29}O_{28}SH_{177}$, 347 atoms), respectively. The standard deviations of the FR-MP2 Mulliken (or Natural) partial atomic charges from the conventional ones were 0.0016 (or 0.0016) for $C_{10}H_{22}$, 0.0019 (or 0.0018) for $NH_2-C_{16}O_2H_{28}-COOH$ and 0.0033 (or 0.0023) for $NH_3^+-C_{16}O_2H_{28}-COO^-$, respectively. These errors were attributed to the shape of molecules, the choice of fragments and the degree of ionic characters of molecules as well as the choice of methods. The CPU time of aglycoristocetin, conjugated model, polypropylene model complexed with zirconocene and magainin computed by the FR-ZINDO method was respectively 2, 4, 6 and 21 times faster than that by the normal ZINDO method. The CPU time of $NH_2-C_{16}O_2H_{28}-COOH\;and\;NH_3^+-C_{16}O_2H_{28}-COO^-$ computed by the FR-MP2 method was, respectively, 6 and 20 times faster than that by the normal MP2 method. The largest molecule calculated by the FR-ZINDO method was B-DNA (766 atoms). These results will enable us to compute atomic charges of huge molecules near future.

• The Journal of the Petrological Society of Korea
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• v.4 no.1
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• pp.31-48
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• 1995

The Jurassic Kwanaksan stock, so far known to be composed of biotite granite only, has the mineral assemblage of quartz+K-feldspar+plagioclase+biotite${\pm}$gernet. The lithology of the stock is classified as alkali feldspar granite by their mode and plagioclase compositions (An<5). Subsolvus feldspars, rather early crystallization of biotite, and shallow emplacement depth estimated from Q-Ab-Or diagram suggest hydrous nature of the magma, which contrasts with anhydrous A-type like geochemistry described below. Major and trace element compositions of the Kwanaksan stock are distinct from those of the adjacent Seoul batholith, suggesting a genetic difference between the two, The Kwanaksan stock shows geochemical characteristics similar to A-type granite in contrast to most other Mesozoic granites in Korea, in that it has high $SiO_2$(73~78wt%), $Na_2O+K_2O$, Ga(27~47 ppm). Nb(22~40 ppm), Y(48~95 ppm), Fe/Mg and Ga/Al, and low CaO(<0.51 wt%). Ba (8~75 ppm) and Sr(2~23 ppm). However, it has lower Zr and LREE and higher Rb(384~796 ppm) than typical A-type granite. LREE-depleted rare earth element pattern with strong negative Eu anomaly of previous studies is reinterpreted as representing source magma characteristics. The residual material during partial melting is not compatible with pyroxenes, amphibole or garnet, while significant amount of plagioclase is required. Similarity of geochemistry of the Kwanaksan stock to A-type granite suggests the origin of the stock has a chose relationship with that of A-type granite. These observations lead us to propose that the Kwanaksan stock was formed by partial melting of felsic source rock.

• Economic and Environmental Geology
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• v.30 no.5
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• pp.395-406
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• 1997

Some RE (Zr, Nb, REE) ore deposits are located in the middle part of the Korean peninsula. Geotectonically, the RE ore deposits situated on the Kyemyeongsan Formation of northern margin of the Okcheon geosynclinal belt and in the transitional zone between Kyeonggi massif and Okcheon belt. The rare metal deposits distributed in Kyemyeongsan Formation which consists of schist and alkaline granite. The alkali granite has suffered extensive post-magmatic metasomatism and hydrothermal processes. The ore contains mainly Ce-La, Ta-Nb, Y, Y-Nb, Ti-Nb-(U), Nd-Th group minerals. Fergusonite, one of Nb-Y rich REE minerals belonging to the A-B oxides, is most common mineral in the rare metal deposits. The fergusonite bearing rocks may be devided into four types by occurrence features and mineral association, that is, zircon type, allanite vein, feldspar type, and fluorite type. Fergusonites show wide variations in optical properties, due to part of differences in their chemical composition (depending on the types), but also the degree of crystalinity of the individual specimens. Fergusonite metamicts enclosed in biotite are generally surrounded by well developed pleochroic haloes. Usually, fergusonite is accompanied with zircon and other REE-bearing minerals. Petrographical and chemical data are presented for fergusonites which collected different types. $Nb_2O_3$ and $Y_2O_3$ contents range from 48.51 to 53.01 wt.% and 29.18 to 42.02 wt.% respectively. Also, $ThO_2$, (1.83~6.93), $UO_2$, (0.17~2.84), ${\sum}RE_2O_3$ (except to Y) (1.11~8.73), and $TiO_2$, (0.19~1.19 wt.%) contents show variational compositions according to fergusonite types. The ${\sum}RE_2O_3$ of fergusonites are positive relation with $Y_2O_3$ and negative relaton with $ThO_2$ and $({\sum}{RE_2O_3}-{Y_2O_3})$. The $Nb_2O_3$ is sightly negative relation with $Ta_2O_3$. Back-scattered electron microscope images (BEI) of fergusonite show the mineral composition and textural feature is very complicated. The variation of Nb, Th and REE content of fergusonite and the modes of occurrence of mineral, suggests that REE may have been mobilized during the circulation of hydrothermal fluids related to contact metamorphism (metasomatism). The chemical variation of the fergusonites with occurrences and mineral association can be related to metasomatism of alkaline fluid was probably the dominant ore-forming process in Chungju district.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.368-370
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• 2013

투명 전극은 전기전도도를 갖는 동시에 가시광선을 투과하는 소재를 말하며, 구체적으로는 빛의 파장이 400~700 nm 영역대의 가시광선을 80% 이상 투과하며 전기전도도가 비저항으로 $10^{-3}{\Omega}cm$이하이거나 면저항이 $10^3{\Omega}$/${\Box}$소재를 의미한다. 투명 전극은 전기전도도에 따라 사용되는 용도가 다양하다. LCD, PDP, OLED 와 같은 평판디스플레이 및 3D 디스플레이의 투명전극으로 사용되는 핵심재료일 뿐만 아니라 터치스크린, 투명필름, 대전방지막, 열반사막, EMI 방지막, 태양전지 분야에 광범위하게 이용되고 있다. 일반적으로, 투명전극 박막에 가장 많이 사용되고 있는 소재는 ITO (indium tin oxide)이나, 주성분인 In의 사용량 증가로 상용 ITO 타겟 가격이 급등하고 있음으며, 고가의 ITO 타겟을 대체하기 위한 저가의 투명전극 소재 개발이 절대적으로 요구되며, 신규 소재 개발을 통한 기술력 우위 선점이 필수적으로 요구되는 상황이다. 본 연구에서는 기존에 디스플레이 분야에서 널리 활용되는 고가의 ITO를 대체하기 위한 다성분 금속산화물 투명전극 스퍼터링 타겟 제조기술을 개발하기 위한 연구로서, Metal이 첨가된 In-Ga-Zn-O기반의 3성분계 투명도전성 소재를 조성설계, 고밀도 균질 타겟 제조 및 투명전극 박막을 형성하는 연구를 실시하였다. 고체산화물 산화인듐(In2O3)분말, 산화갈륨(Ga2O3) 분말그리고 산화아연(ZnO)분말과 Metal을 몰비로 칭량한 후 분말을 폴리에틸렌제 포트에 넣고 에탄올을 충분히 채운 후 지르코니아(ZrO2) 볼(ball)을 이용하여 24 h 동안 볼 밀링(ball milling) 방법으로 혼합한 뒤, $120^{\circ}C$의 플레이트위에서 마그네틱 바로 stirring하면서 건조하였다. 이 분말을 건조기에서 완전히 건조한 후 알루미나 유발을 이용해서 pulverizing한 후 sieving기를 이용하여 분말의 조립화를 하였다. 이 분말을 금형에 넣고 300 kg/$cm^2$의 압력으로 press하여 성형한 뒤 대기중에서 소결하였다 소결을 위한 승온 온도는 $10^{\circ}C$/min이었고 소결은 $1,450^{\circ}C$에서 6 h 동안 하였다. IGZO target의 조성 비율은 1:1:12 (mol%)를 사용하였으며, 첨가한 Metal은 Boron (B), Germanium (Ge), Barium (Ba)을 사용하여 타겟을 제작하였다. M-IGZO 박막은RF magnetron Sputter를 이용하여 증착하였으며, 앞선 실험에서 제작한 타겟을 사용하여 M-IGZO박막을 투명전극으로 사용하기 위한 각각의 특성을 파악하였다. 모든 박막은 상온에서 증착을 하였으며, 증착된 박막두께를 측정하기 위해 ${\alpha}$-step IQ를 사용하였고, 광학적 특성을 분석하기 위해 UV-Visible spectrophotometer 로 투과율을 측정하였다. 그리고 전기적 특성을 측정하기 위해 Hall effect measurement 및 4-probe를 사용하였으며, 결정성 분석을 위하여 XRD를 이용하여 분석하였다. 표1은 M-IGZO타겟을 사용하여 증착시간에 따른 면저항 특성을 나타내었다. Ge, B, Ba이 첨가된 IGZO 박막은 증착시간이 증가할수록 면저항이 낮아짐을 알 수 있었다. 또한, Ge이 첨가된 IGZO 박막이 다른 금속이 첨가된 IGZO 박막의 면저항보다 현저히 낮음을 알 수 있었다. Fig. 1(a), (b), (c)는 각 타겟을 동일한 조건으로 증착을 하여 광학적특성을 나타내는 그래프이다. GZO 박막의 광학적 특성을 보면 가시광 영역에서 평균 투과율은 모두 80% 이상으로 우수한 광투과 특성을 보여 투명전자소자로 사용가능하다. 특히, 자외선 영역을 모두 차단하는 UV cut 능력이 우수함을 알 수 있었다. 따라서, 금속이 첨가된 IGZO 박막을 태양전지용 투명전극으로 사용할 경우, 자외선에 의하여 수명이 단축되는 현상을 줄여줄 수 있음을 기대할 수 있으며 내구성 향상에 크게 기여할 것으로 보인다. Fig. 2는 Ge=0, 0.5, 5%인 IGZO 투명전극을 총 40회 반복하여 증착을 실시한 후 각각의 면저항을 측정한 결과이다. 실험결과에 따르면 Ge가 0%, 5%인 IGZO 투명전극은 증착을 거듭할수록 면저항이 증가하는 결과를 나타내었으며, 0.5%인 IGZO 투명전극은 점차 안정화되어가는 결과를 나타내었다. 따라서 안정화 되었을 때 평균 면저항은 26ohm/sq.로 나타났으며, 광투과율은 Fig. 3과 같이 가시광영역에서 평균 80%이상의 결과를 보였으며, 550 nm에서는 86.36%의 우수한 특성을 나타내었다. 본 연구에서는 Metal이 첨가된 In-Ga-Zn-O기반의 3성분계 투명도전성 소재 target을 제작하여 RF magnetron sputter로 박막을 형성한 후 특성을 비교하였다. M-IGZO target 중 Ge (0.5%)을 첨가한 IGZO 타겟을 사용한 투명전극이 가장 우수한 특성을 보였으며, 제작된 M-target의 In 비율이 30% 정도로 기존의 ITO (90%) 대비하여 투명전극 제작 단가를 절감할 수 있다.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.413-418
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• 2005

Perovskite $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3[PNN-PZT]$ ceramics were synthesized by conventional ceramic processing technique. In order to modify piezoelectric properties for sensor application in this system, NiO addition was considered to provide $Ni^{+2}$ as an acceptor, which was known to occupy with B site in the structure. The effect of NiO addition up to $8\;mol\%$ on the following piezoelectric properties as well as sintering properties was investigated. When NiO added more than $1\;mol\%$, average grain size was decreased and second phase was found to form. Moreover, the second phase caused decrease in relative dielectric constant $(\varepsilon_{33}T/\varepsilon0)$, electro-mechanical coupling factor $(k_p)$, and piezoelectric charge constant $(d_{33})$, while increasing mechanical quality factor $(Q_m)$. When $1\;mol\%$ NiO was added, density, dielectric properties and piezoelectric properties were abruptly increased.

• The Journal of Korean Academy of Prosthodontics
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• v.49 no.2
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• pp.120-127
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• 2011

Purpose: The purpose of this study was to examine the effects of chromium chloride addition on coloration, mechanical property and microstructure of 3Y-TZP. Materials and methods: Chromium chloride was weighed as 0.06, 0.12, and 0.25 wt% and each measured amount was dissolved in alcohol. $ZrO_2$ powder was mixed with each of the individual slurry to prepare chromium doped zirconia specimen. The color, physical properties and microstructure were observed after the zirconia specimen were sintered at $1450^{\circ}C$. In order to evaluate the color, spectrophotometer was used to analyze the value of $L^*$, $C^*$, $a^*$ and $b^*$, after placing the specimen on a white plate, and measured according to the International Commission on Illumination (CIE) standard, Illuminant D65 and SCE system. The density was measured in the Archimedes method, while microstructures were evaluated by using the scanning electron microscopy (SEM) and XRD. Fracture toughness was calculated Vickers indentation method and indentation size was measured by using the optical microscope. The data were analyzed with 1-way ANOVA test (${\alpha}$ = 0.05). The Tukey multiple comparison test was used for post hocanalysis. Results: 1. Chromium chloride rendered zirconia a brownish color. While chromium chloride content was increased, the color of zirconia was changed from brownish to brownish-red. 2. Chromium chloride content was increased; density of the specimen was decreased. 3. More chromium chloride in the ratio showed increase size of grains. 4. But the addition of chromium chloride did not affect the crystal phase of zirconia, and all specimens showed tetragonal phase. 5. The chromium chloride in zirconia did not showed statistically significant difference in fracture toughness, but addition of 0.25 wt% showed a statistically significant difference (P<.05). Conclusion: Based on the above results, this study suggests that chromium chlorides can make colored zirconia while adding in a liquid form. The new colored zirconia showed a slight difference in color to that of the natural tooth, nevertheless this material can be used as an all ceramic core material.

• Asian Pacific Journal of Cancer Prevention
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• v.16 no.10
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• pp.4451-4456
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• 2015

Background: The aim of our present study was to compare quality of life (QoL) between intermediate-stage (BCLC-B) HCC patients who had undergone either liver resection or transcatheter arterial chemoembolization (TACE). Materials and Methods: A total of 102 intermediate-stage HCC patients participated in our study, including 58 who had undergone liver resection and 44 who had undergone TACE. Baseline demographic characteristics, tumor characteristics, and long-term outcomes, such as tumor recurrence, were compared and analyzed. QoL was assessed using the Short Form (SF)-36 health survey questionnaire with the mental and physical component scales (SF-36 MCS and PCS). This questionnaire was filled out at HCC diagnosis and 1, 3, 6, 12, 24 months after surgery. Results: For the preoperative QoL evaluation, the 8 domains related to QoL were comparable between the two groups. The PCS and MCS scores were significantly decreased in both the TACE and resection groups at1 month after surgery, and this decrease was greater in the resection group. These scores were significantly lower in the resection group compared with the TACE group (P<0.05). However, these differences disappeared at 3 and 6 months following surgery. One year after surgery, the resection group showed much higher PCS scores than the TACE patients (P=0.018), and at 2 years after surgery, the PCS and MCS scores for the resection group were significantly higher than those for the TACE group (P<0.05). Eleven patients (19.0%) in the resection group and 17 (38.6%) in the TACE group suffered HCC recurrence (P<0.05). Univariate and multivariate analyses indicated that tumor recurrence (HR=1.211, 95%CI: 1.086-1.415, P=0.012) was a significant risk factor for poorpostoperative QoL in the HCC patients.Conclusions: Due to its effects on reducing HCC recurrence and improving long-term QoL, liver resection should be the first choice for the treatment of patients with intermediate-stage HCC.