• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.1-5
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• 2006

The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.

• 한국분말재료학회지
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• 제18권6호
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• pp.568-574
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• 2011

As operating temperatures of engines or turbines continually increase for higher efficiency, significant amounts of researches have been focused on finding new materials, which would be alternatives to conventional yttria-stabilized zirconia (YSZ) for thermal barrier coatings (TBCs). In this study, phase evolution and thermo-physical properties of $La_2(Zr_{1-x}Hf_x)_2O_7$ pyrochlore systems are investigated for TBC applications. $La_2(Zr_{1-x}Hf_x)_2O_7$ systems are comprised by selecting $La^{3+}$ as A-site ions and $Zr^{4+}/Hf^{4+}$ as B-site ions in $A_2B_2O_7$ pyrochlore structures. For the developed phases in $La_2(Zr_{1-x}Hf_x)_2O_7$ compositions, thermo-physical properties such as thermal conductivity, thermal expansion coefficient are examined. The potential of these $La_2(Zr_{1-x}Hf_x)_2O_7$ compositions for TBC application is also discussed.

• 한국세라믹학회지
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• 제28권11호
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• pp.935-941
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• 1991

Effects of calcination process and ZrO2 addition on the electrical properties of [(Ba0.82Sr0.08Ca0.1)O]m(Ti1-$\chi$Zr$\chi$)O2 ceramics have been investigated. With the variation of A/B-site ratio m of the dielectric formulations, sintering behavior and the resistivity after sintering in a reducing atmosphere have been affected by the calcination process. When the dielectric formulations of m=1.01 were sintered in a reducing atmosphere, the room-temperature resitivity of 109 {{{{ OMEGA }}.cm was obtained for samples processed with two-step calcination, which was much lower than 1012 {{{{ OMEGA }}.cm of samples calcined once. It was confirmed that high resistivity of Ca-doped BaTiO3 ceramics, after sintering in a reducing atmosphere, is maintained by acceptor-like behavior of CaTi" which is formed by Ca substitution to Ti-site. It was also found out that the critical amount of B-site Ca substitution for reduction inhibition of BaTiO3 is around 0.005 mol. With the increasing amount of ZrO2 addition to dielectric formulations, Curie peak was depressed and Curie temperature was lowered due to the enhanced diffuse phase transition.tion.

• Journal of Electrical Engineering and Technology
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• 제6권4호
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• pp.543-550
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• 2011

Conductive SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol%) mixture of zirconium diboride (ZrB2) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering (SPS). Sintering was carried out for 5 min in an argon atmosphere at a uniaxial pressure and temperature of 50 MPa and $1500^{\circ}C$, respectively. The composite sintered at a heating speed of $25^{\circ}C$/min and an on/off pulse sequence of 12:2 was denoted as SZ12L. Composites SZ12H, SZ48H, and SZ10H were obtained by sintering at a heating speed of $100^{\circ}C$/min and at on/off pulse sequences of 12:2, 48:8, and 10:9, respectively. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined and thermal image analysis of the composites was performed. The apparent porosities of SZ12L, SZ12H, SZ48H, and SZ10H were 13.35%, 0.60%, 12.28%, and 9.75%, respectively. At room temperature, SZ12L had the lowest flexural strength (286.90 MPa), whereas SZ12H had the highest flexural strength (1011.34 MPa). Between room temperature and $500^{\circ}C$, the SiC-$ZrB_2$ composites had a positive temperature coefficient of resistance (PTCR) and linear V-I characteristics. SZ12H had the lowest PTCR and highest electrical resistivity among all the composites. The optimum SPS conditions for the production of energy-friendly SiC-$ZrB_2$ composites are as follows: 1) an argon atmosphere, 2) a constant pressure of 50 MPa throughout the sintering process, 3) an on/off pulse sequence of 12:2 (pulse duration: 2.78 ms), and 4) a final sintering temperature of $1500^{\circ}C$ at a speed of $100^{\circ}C$/min and sintering for 5 min at $1500^{\circ}C$.

• E2M - 전기 전자와 첨단 소재
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• 제6권3호
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• pp.207-213
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• 1993

Pb(Z $r_{0.54}$, $Ti_{0.46}$) $O_{3}$에 B $i_{2}$ $O_{3}$를 0.0wt%까지 첨가하여 미세구조, 유전, 압전, 성질에 미치는 영향을 고찰하였다. B $i_{2}$ $O_{3}$의 고용범위는 약 0.5~0.7wt%정도 이었고 B $i_{2}$ $O_{3}$ 첨가량이 증가함에 따라서 결정립의 크기가 감소하였다. B $i_{2}$ $O_{3}$첨가량이 증가함에 따라 고용한계까지는 $d_{33}$ , tan .delta., .xi.$_{r}$(분극후)값이 증가하였으며 Qm값과 밀도는 감소하였다. $K_{p}$ 값은 B $i^{3+}$ 가 P $b^{2+}$를 치환하므로 형성되는 Pb공공의 형성에 의해 자발분극이 증가됨에 따라 증가하였다.다.

• 한국초전도ㆍ저온공학회논문지
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• 제5권1호
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• pp.13-16
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• 2003

Adhesion of $SrZrO_3$ resistive oxide barrier on Ag sheathed Bi(2223) tapes prepared by the sol-gel and dip-coating method was evaluated with an aid of Taguchi method and Lie($2^1{\times}3^7$) orthogonal arrays to determine the optimal process combination of levels of factors that best satisfy the bigger is better quality characteristic (QC=B). For analyses of results statistical calculations such as average and analysis of variance (ANOVA) were employed to analyze the results for improving the performance qualities of the dip-coated $SrZrO_3$ film. Experimentally, the performance of the films was evaluated in terms of bond strength by varying Sr/Zr moi ratio (A), amount of organic vehicle additives (B), drying temperature (C) and time (D), heat treatment temperature (E) and time (F), respectively. The optimal combination of levels of factors was determined to be $A_3B_2C_3D_2E_1F_3$ having a 90% confidence level.

• Nuclear Engineering and Technology
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• 제54권7호
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• pp.2376-2385
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• 2022

Two groups of oxide dispersion-strengthened reduced-activation ferritic/martensitic steels (A and B) were prepared by adding Y, Ti, and Zr into steels through vacuum induction melting to investigate the inclusions, microstructures, mechanical properties of the alloys. Results showed that particles with Y, Ti, and Zr easily formed. Massive, Zr-rich inclusions were found in B steel. Density of micron inclusions in A steel was 1.42 × 10¹⁴ m^-3, and density of nanoparticles was 3.61 × 10¹⁶ m^-3. More and finer MX carbides were found in steel tempered at 650 ℃, and yield strengths (YS) of A and B steel were 714±2 and 664±3.5 MPa. Thermomechanical processing (TMP) retained many dislocations, which improved the mechanical properties. YSs of A and B treated by TMP were 725±3 and 683±4 MPa. The existence of massive Zr-rich inclusions in B steels interrupted the continuity of the matrix and produced microcracks (fracture), which caused a reduction in mechanical properties. The presence of fine prior austenite grain size and inclusions was attributed to the low DBTTs of the A steels; DBTTs of A650 and A700 alloy were -79 and -65 ℃. Tempering temperature reduction and TMP are simple, readily useable methods that can lead to a superior balance of strength and impact toughness in industry applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1436-1438
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• 2001

The $\beta$-SiC + $ZrB_2$ ceramic electroconductive composites were pressureless-sintered and annealed by adding 12wt% $Al_2O_3$ + $Y_2O_3$ (6 : 4wt%) powder as a function of sintering temperature. The relative density showed the highest value of 81.1% at 1900$^{\circ}C$ sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), $TiB_2$, $Al_5Y_2O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest value of 230 MPa for composites sintered at 1900$^{\circ}C$. The vicker's hardness and the fracture toughness showed the highest value of increased with increasing sintering temperature and showed the highest of 9.88 GPa and 6.05 $MPa{\cdot}m^{1/2}$ at 1900$^{\circ}C$. The electrical resistivity was measured by the Pauw method from 25$^{\circ}C$ to 700$^{\circ}C$. The electrical resistivity of the composites showed the PTCR (Positive Temperature Coefficient Resistivity).

• 한국세라믹학회지
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• 제40권1호
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• pp.37-45
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• 2003

$BaTiO_3$의 Ba 자리에 Ca, Ti 자리에 Zr을 첨가한 $(B a_{1-x}Ca_x)(Ti_{0.96-y}Zr_{y}Sn_{0.04})O_3$ $(0.15 {\leq} x{\leq}0.20,\; 0.09{\leq}y{\leq}$0.14) 조성에 2차상 형성을 유도하여 복합체를 만든 후 유전 및 소결 특성을 조사하였다. Ca량이 15mol% 이상 첨가됨에 따라 $CaTiO_3$를 주성분으로 하는 2차상이 석출하여 복합체가 형성되었으며, Ca량의 증가에 따라 2차상 분율이 증가하였다. Ca량의 증가는 큐리 온도를 mol%당 $1.7^{\circ}C$ 감소시키며, 저유전율 2차상의 영향으로 Ca량 증가에 따라 최대 유전율은 mol%당 200 감소하였다. Zr 첨가는 큐리온도를 mol%당 $10^{\circ}C$ 감소시키며, 확산형 상전이 현상을 증가시켜 최대 유전율을 217 감소시켰다. 2차상의 증가에 의하여 비정상 입성장이 억제되어 소결밀도, 내전압 특성이 향상되었으며, Zr 첨가에 의하여 커패시턴스의 온도 안정성을 제어하여 EIA 규격을 만족하는 고압, 고유전율 Y5U 콘덴서 조성을 개발하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권9호
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• pp.516-522
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of$Al_2O_3+Y_2O_3$ Phase analysis of composites by XRD revealed $\alpha-SiC(6H) ZrB_2\; and YAG(Al_5Y_3O_{12})$ The relative density of composites were increased with increased Al2O3+Y2O3 contents. The Flexural strength showed the highest value of 390.6MPa for composites added with 20wt% Al2O3+Y2O3 additives at room temperature. Owing to crack deflection crack bridging phase transition and YAG of fracture toughness mechanism the fracture toughness showed the highest value of 6.3MPa.m1/2 for composites added with 24wt% Al2O3+Y2O3 additives at room temperature. The resistance temperature coefficient showed the value of$ 2.46\times10^{-3}\;, 2.47\times10^{-3},\; 2.52\times10^{-3}/^{\circ}C$ for composite added with 16, 20, 24wt% Al2O3+Y2O3 additives respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $256{\circ}C\; to\; 900^{\circ}C$.