• 대한전자공학회논문지SD
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• 제37권1호
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• pp.29-35
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• 2000

전자빔 증착 장비를 이용하여 SrS:Cu,X TFEL 소자를 제작한 후, 발광 특성을 분석하였다. 형광체 모체는 SrS 분말을 사용하였고 발광 중심체로는 Cu, $CuF_2,\;Cu_2S$ 또는 CuCl 등의 미분말을 사용하였다. SrS:Cu,X TFEL 소자의 발광 특성은 부활성제에 따라 매우 많은 변화를 나타내었다. SrS:$Cu_2$ TFEL 소자의 휘도($L_{40}$)와 효율 (${\eta}_{20}$)은 각각 1443 cd/$m^2$와 2.44 lm/w를 나타내었고, 녹색 빛의 발광 효율은 ZnS:Tb TFEL 소자보다 높아 새로운 녹색 형광체로의 활용이 기대되었다. SrS:CuCl TFEL 소자의 휘도($L_{40}$)와 효율(${\eta}_{20}$)은 각각 262 cd/$m^2$와 0.26 lm/w를 나타내었고 청색 빛을 방출하여 새로운 청색 형광체로의 활용 가능성을 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제33권2호
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• pp.393-397
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• 2012

We report a new route to synthesize high quality zinc blende CdS and ZnS nanocrystals in noncoordinating solvent 1-octadecene, using dodecanethiol (DDT) molecules as both the sulfur source and surface capping ligands. Different reaction temperatures and Cd(Zn)/DDT molar ratios were tested to optimize the synthesis conditions. Absorption photoluminescence (PL) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) pattern, and transmission electron microscopy (TEM) were used to characterize assynthesized nanocrystals. The narrow half width at the half-maximum on the long wavelength side of the firstexcitonic absorption peak and TEM images demonstrated nearly monodisperse size distributions of asprepared CdS, ZnS, and CdS/ZnS core/shell nanocrystals. Only trap emissions of the nanocrystals were detected when the amount of DDT was excessive, this came from the strong quenching effect of thiol groups on the nanocrystal surfaces. After overcoating with ZnS shells, band-gap emissions of CdS nanocrystals were partially recovered.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1991년도 추계학술대회 논문집
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• pp.17-19
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• 1991

Pastes consisting of $CdZnS_{1-y}Te_{y}$ powder, 20wt/o of $CdCl_2$as a sintering aid and appropriate amount of Propylene Glycol(P.G) have been coated on glass substrates and were sintered at the temperature of $625^{\circ}C$ to find energy band gap, transmittance and electrical properties of the sintered films. The resistivity of sintered film increases with increasing Te content. X-ray diffraction patterns show that $CdZnS_{0.9}Te_{0.1}$ sintered film is in the single film in the two phase region. The transmittance of the sintered film decreases with increasing the Te content.

• 한국전기전자재료학회논문지
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• 제30권10호
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• pp.625-630
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• 2017

ZnS was chemically deposited as a buffer layer alternative to CdS, for use as a Cd-free buffer layer in $Cu(In_{1-x}Ga_x)Se_2$ (CIGS) solar cells. The deposition of a thin film of ZnS was carried out by chemical bath deposition, following which the structural and optical properties of the ZnS layer were studied. For the experiments, zinc sulfate hepta-hydrate ($ZnSO_4{\cdot}7H_2O$), thiourea ($SC(NH_2)_2$), and ammonia ($NH_4OH$) were used as the reacting agents. The mole concentrations of $ZnSO_4$ and $SC(NH_2)_2$ were fixed at 0.03 M and 0.8 M, respectively, while that of ammonia, which acts as a complexing agent, was varied from 0.3 M to 3.5 M. By varying the mole concentration of ammonia, optimal values for parameters like optical transmission, deposition rate, and surface morphology were determined. For the fixed mole concentrations of $0.03M\;ZnSO_4{\cdot}7H_2O$ and $0.8M\;SC(NH_2)_2$, it was established that 3.0 M of ammonia could provide optimal values of the deposition rate (5.5 nm/min), average optical transmittance (81%), and energy band gap (3.81 eV), rendering the chemically deposited ZnS suitable for use as a Cd-free buffer layer in CIGS solar cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.309.1-309.1
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• 2013

현재까지 CIGS 박막 태양전지는 습식공정인 화학적 용액성장법을 사용하여 형성된 CdS버퍼층을 적용할 경우에 가장 높은 효율을 보이고 있다. 그러나, Cd의 독성 문제와 진공 공정과 호환되지 않는 습식공정 때문에 비독성 건식 공정 버퍼층에 대한 연구가 활발히 진행되고 있다. 습식 공정 CdS 버퍼층을 대체하기 위하여 CdS에 비해 밴드갭이 커서 단파장에서 광 손실이 적은 ZnS 버퍼층을 cracker 황화법을 이용하여 제작하여 CIGS 박막 태양전지에 적용하였다. ZnS 버퍼층을 성장시키기 위해 DC 스퍼터를 사용하여 Zn 박막을 증착한 후, cracker를 사용하여 황화반응을 시켰다. cracker의 cracking zone 온도에 따른 S 반응성을 ZnS 박막의 투과도 변화를 통하여 관찰하였다. 성장된 ZnS 박막은 X-ray diffraction와 Rutherford backscattering spectrometry을 이용하여 박막의 결정성과 조성을 분석하였고, SEM 측정을 통하여 박막의 단면 및 표면 형상을 관찰하였다. 그리고 reflection electron energy loss spectroscopy 분석을 통해 밴드갭을 측정하였다. $700^{\circ}C$의 cracking zone 온도, 3 nm의 Zn 두께, 1 분의 황화공정 조건에서 제작된 ZnS 박막을 CIGS 태양전지의 버퍼층으로 적용한 결과, 반사방지막 없이 12.6%의 변환효율을 얻었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.39-43
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• 1998

Single crystals of{{{{ { Zn}_{ 1-x} {Mn }_{x }{Te} }}}} with x=0.3-0.6 were prepared by the standard Bridgeman method. Diffuse neutron diffraction intensities due to the short range magnetic ordering is found in the vicinities of 1 1/2 0 reciprocal point and its equivalent point, indicating that the magnetic correlation of the clusters is the type III antiferromangetic one do the F-type Bravais class crystals, being identical with that of {{{{{ Cd}_{ 1-x} {Mn }_{x }Te }}}}. Neutron inelastic scattering measure-ment has been performed for {{{{{ Zn}_{ 0.6} { Mn}_{ 0.4}Te }}}} sample using the cold neutron spectrometer. AGNES. High resolution measurement with the energy resolution of {{{{ TRIANGLE E= +- .01meV}}}} was carried out in the temperature range from 10K to the ambient. Critical scattering, closely related with the spin glass transition, has been observed for the first time in this semimagnetic semi-conductor. The critical scattering is observed at temperatures in the vicinity of the spin glass transition temperature, 17K. The scattering is observed as a kind of quasielastic scattering in the reciprocal range where the elastic magnetic diffuse scattering has been observed, e.g., 11/20 reciprocal point, indicating the spin fluctuation has dynamic components in this material. Photoconductivity has been discovered below 150K in {{{{{ Zn}_{ 0.4} {Mn }_{0.6 } Te}}}}. The electric AC conductivity has been increased dramatically under the laser light with the wave lengths of {{{{ lambda =6328,5145 and4880 }}}}$\AA$ ,respectively. After the light was darkened, the conductivity was reduced to the original level after about 2000 seconds at 50K, being above the spin glass transition temperature. This phenomenon is the typical persistent photoconductivity; PPC which was similarly found in {{{{ { Zn}_{ 1-x} { Mn}_{x} Te}}}}.

• 한국재료학회지
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• 제22권5호
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• pp.259-273
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• 2012

Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

• 한국재료학회지
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• 제9권2호
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• pp.173-180
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• 1999

Thermally evaporated ZnTe films were investigated as a back contact material for CdS/CdTe solar cells. Two deposition methods, coevaporation and double-layer methods, were used for Cu doping in ZnTe films. ZnTe layers (0.2$\mu\textrm{m}$ thick) were deposited either on glass or on CdS/CdTe substrates without intentional heating of the substrates. Post-deposition annealing was performed at 200,300 and $400^{\circ}C$ for 3,6 and 9 minutes, respectively. Band gap of 2.2eV was measured for both undoped and doped films and a slight change in the shape of absorption spectra was observed in Cu-doped samples after annealing at $400^{\circ}C$. The resistivity of as-deposited ZnTe decreased from 10\ulcorner~10\ulcornerΩcm down to 10\ulcornerΩcm as Cu concentration increased from 0 to 14 at.%. There was not a noticeable change in less of annealing temperature up to $300^{\circ}C$ whereas films annealed at $400^{\circ}C$ revealed hexagonal (101) orientations as well. Some of Cu-doped ZnTe revealed x-ray diffraction (XRD) peaks related with Cu\ulcornerTe(x=1.75~2). Grain growth was observed from about 20nm in as-deposited films to 50nm after annealing at $400^{\circ}C$ by scanning electron microscopy (SEM). Cu distribution in ZnTe films was not uniform according to Auger electron spectroscopy (AES) measurements.

• 태양에너지
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• 제20권2호
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• pp.43-54
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• 2000

동시 진공증발법을 이용하여 coming glass, soda-lime glass, Mo가 증착된 soda-lime glass 위에 $Cu(In_{1-x}Ga_x)Se_2$ 박막을 증착하였다. Soda-lime glass 위에서 제조된 $Cu(In_{0.5}Ga_{0.5})Se_2$ 박막의 전기비저항값과 정공농도는Cu/(In+Ga)비에 큰 영향을 받지 않았다. Soda-lime glass위에서의 $Cu(In_{1-x}Ga_x)Se_2$ 박막내부와 표면에는 Na이 검출되었고, 표면의 Na는 산소와 결합하고 있었으며, Cu가 부족한 조성에서 이차상이 형성되었다. Ga/(In+Ga)비가 증가할수록 $Cu(In_{1-x}Ga_x)Se_2$ 박막은 회절 peak들의 큰 회절각으로 이동, 초격자 peak등의 분리, 결정립 크기의 감소가 관찰되었다. $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ 박막은 Ga/(In+Ga)비에 무관하게 전기적으로 p-type을 나타내었다. Ag/n-ZnO /i-Zno/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo/glass구조의 태양전지를 제조하였으며, 태양전지변환효율(Eff.) = 14.48%, 단락전류밀도(Jsc) = $34.88mA/cm^2$, 개방전압(Voc) =581.5 mV, 충실도(F.F) = 0.714을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.257.1-257.1
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• 2015

Cu(In,Ga)Se2 (CIGS) 박막 태양 전지에서 buffer layer는 CIGS 흡수층과 TCO 사이의 밴드갭 차이에 대한 문제점과 lattice mismatch를 해결하기 위해 필수적이다. 흔히 buffer layer 물질로는 CdS가 가장 많이 사용되고 있으나 Cd의 독성에 관한 문제가 야기되고 있다. 따라서 ZnS(O, OH) buffer layer가 친환경 물질로 기존의 CdS 버퍼 층의 대체 물질로 각광 받고 있으며, 단파장 범위에서 높은 투과율로 인해 wide band gap의 Chalcopyrite 태양 전지에 응용되는 buffer layer로 많은 연구가 이루어지고 있다. 또한 buffer layer를 최적화 하여 carrier lifetime과 양자 효율이 증가시킬 수 있는 특성을 가지고 있다. 이 연구에서는 Cu(In,Ga)Se2 (CIGS) 박막에 화학습식공정 (CBD) 방법을 이용하여 최적화된 ZnS(O, OH)의 증착 조건을 찾고, 고품질의 buffer layer를 제조하기 위한 실험에 초점을 맞췄다. 또한, buffer layer의 막질을 개선하고 균일한 막을 제조하기 위해 processing parameters인 시약의 농도, 제조 시간 및 온도 등의 다양한 변화를 통해 실험을 진행하였다. 그 후 최적화된 ZnS(O, OH) buffer layer의 특성 분석을 위해 X-ray diffraction(XRD), photoluminescence (PL), scanning electron microscope (SEM) and GD-OES을 이용하였고, 이를 통해 제조된 CIGS 박막 태양전지는 light induced current-voltage (LIV) and external quantum efficiency (EQE)를 통해 특성 분석을 실시 하였다. 결과적으로, 제조된 ZnS(O, OH) buffer layer의 $ZnSO4{\cdot}7H2O$의 농도는 0.16 M, Thiourea는 0.5 M, NH4OH는 7.5 M, 그리고 반응 온도는 77.5 oC의 조건 하에 CIGS 기판 위에 균일하고 균열이 없는 ZnS(O, OH) 박막을 제조하였으며 이때 제조된 태양전지의 소자 특성은 Voc = 0.478 V, Jsc = 35.79 mA/cm2, FF = 47.77%, ${\eta}=8,18 %$이다.