• Current Photovoltaic Research
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• v.5 no.1
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• pp.20-24
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• 2017

Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.813-816
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• 2002

We investigate the junction between CdZnTe and a variety of metals with the aim of determining whether the choice of metal can improve the performance of X-ray image detectors, in particular minimizing the dark current. The samples consist of $5{\mu}m$ thick CdZnTe with top electrodes formed from In, Al, and Au. For each metal, current transients following application of valtages from -10V to 10V are measured for up to 1 hour. We find that dark currents depending on the metal used. The current is controlled by hole injection at the metal-CdZnTe junction and there is consistent trend with the metal's work function possibly and it seems that metal to CdZnTe layer junction is ohmic contact.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1649-1651
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• 2000

Optical properties of $Cd_{1-x}Zn_{x}S$ films deposited by :chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented, Especially, in order to control more effectively the zinc component of the films, zinc acetate, which used as the zinc source, mixed in reaction solution after preheating and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifts to a shorter wavelength and the optical band gap increased. The photo conductivity of the films was larger than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate.

• Korean Chemical Engineering Research
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• v.55 no.1
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• pp.93-98
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• 2017

This experiment investigated characteristic changes in a $Cu_2ZnSnS_4$(CZTS) solar cell by applying a $Zn(O_x,S_{1-x})$ butter layer with various compositions on the upper side of the absorber layer. Among the four single layers such as $Zn(O_{0.76},S_{0.24})$, $Zn(O_{0.56},S_{0.44})$, $Zn(O_{0.33},S_{0.67})$, and $Zn(O_{0.17},S_{0.83})$, the $Zn(O_{0.76},S_{0.24})$ buffer layer was applied to the device due to its bandgap structure for suppressing electron-hole recombination. In the application of the $Zn(O_{0.76},S_{0.24})$ buffer layer to the device, the buffer layer in the device showed the composition of $Zn(O_{0.7},S_{0.3})$ because S diffused into the buffer layer from the absorber layer. The $Zn(O_{0.7},S_{0.3})$ buffer layer, having a lower energy level ($E_V$) than a CdS buffer layer, improved the $J_{SC}$ and $V_{OC}$ characteristics of the CZTS solar cell because the $Zn(O_{0.7},S_{0.3})$ buffer layer effectively suppressed electron-hole recombination. A substitution of the CdS buffer layer by the $Zn(O_{0.7},S_{0.3})$ buffer layer improved the efficiency of the CZTS solar cell from 2.75% to 4.86%.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.1
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• pp.1-4
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• 2002

To obtain the blue emission of powder electroluminescent device, the emission properties of ZnS:Cu were estimated by the variation of applied frequency and the addition of dye to ZnS:Cu phosphor. The variation of applied frequency was from 400 to 4kHz and the addition ratio of dye was from 0 to 5 weight percent respectively. The increment of applied frequency made that emission peaks were shifted from 500.5nm and 460nm at 400Hz to 490nm and 450nm at 4kHz. CIE coordinate system was shifted from x=0.1647, y=0.3711 at 400Hz to x=0.1543, y=0.1856 at 4kHz. On the basis of applied voltage 100V, 400Hz, the increment of addition ratio of dye also made that emission peak was shifted from 505nm(0wt%) to 490nm(5wt%) and the CIE coordinate system was shifted from x=0.1647, y=0.3711(0wt%) to x=0.1334, y=0.2363 (5wt%). The brightness was increased from 60 cd/$m^2$(400Hz) to 174 cd/$m^2$(4kHz) with increment of frequency. When the addition ratio of dye was above 1wt%, the brightness was decreased below 42% of initial brightness and changed from 60 cd/$m^2$(0wt%) to 20.84 cd/$m^2$(5wt%).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.370-370
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• 2011

ZnO 나노 라드 위에 Quantum dot을 형성하고 최종적으로 TiO2를 Atomic Layer Deposition방법으로 증착하여, 그 passivation 효과가 solar cell의 효율에 미친 영향에 대한 실험을 진행하였다. 암모니아 솔루션을 이용한 Hydrothermal 방법으로 수직한 1차원 형태의 ZnO 나노라드를 TCO 기판 위에 성장시킨다. 여기에 잘 알려진 SILAR와 CBD 방법으로 CdS, CdSe 양자점을 증착한다. 그리고 amorphous TiO2로 표면을 덮는 과정을 거치는데, TiO2가 좁은 간격으로 형성된 ZnO라드 구조 위에서 균일하고 정밀하게 증착되도록 하기 위해 Atomic Layer Deposition을 이용하였다. 사용된 precursor는 Titanium isopropoxide와 H2O이며, 실험상에서 0~5 nm 두께의 TiO2 박막을 형성해 보았다. 다양한 분석 방법을 통해 TiO2/QDs/ZnO의 shell-shell-core 구조를 조사했다. (Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), and X-ray Photoelectron Spectroscopy (XPS)). 이를 solar cell에 적용하고 I-V curve를 통해 그 효율을 확인하였으며, Electrochemical Impedance Spectroscopy (EIS)를 통해서 재결합 측면에서 나타나는 변화 양상을 확인하였다.

• Journal of the Korea Institute of Military Science and Technology
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• v.13 no.4
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• pp.659-664
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• 2010

The ZnS/CdS thin films were made using 99.99% ZnS and CdS(Aldrich) powders in $7{\times}10^{-6}torr$. The ZnS layer was coated over the CdS layer on an AlOx membrane within a vacuum, at the average speed of $1{\AA}/sec$. After studying the ZnS/CdS and CdS thin films(both with the dimensions of 2.52nm), using fluorescence spectroscopy and comparing the respective results together, we found that although both of the resulting spectra peaked at 390nm, the ZnS/CdS thin films showed a narrower peak, and a higher intensity of photoluminescence than the CdS thin films. The particles of ZnS/CdS thin films also proved to be more homogeneous in size. In addition, the ZnS layer acted as a protective layer. Also, after studying the spectra of ZnS/CdS thin films taken 30 days after their preparation, we found no signs of aging. These results were verified through the scanning electron microscopy(SEM), EDX analysis, thin film X-ray diffraction, and luminescence spectroscopy.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1349-1354
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• 2011

In this work, we fabricated the CdZnS/CdTe heterojunction and investigated the C-V characteristics to determine the depletion width and the charge density distribution. A parallel experiment on CdS/CdTe heterojunction was also carried out for comparison. The depletion region width, for CdZnS/CdTe heterojunction, was nearly constant, regardless of bias voltage. However, the depletion region was wider than that of CdS/CdTe heterojunction due to high resistivity of CdZnS film. The interface charge density of CdZnS/CdTe heterojunction was increased linearly with the bias voltage and showed lower values than those for CdS/CdTe junction. The open circuit voltage of CdZnS/CdTe heterojunction solar cells increased with zinc mole ratio due to reducing of the electron affinity difference between CdZnS and CdTe films. However, the increase of series resistance due to the high resistivity of Cd1-xZnxS films results in reducing conversion efficiency.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.388-394
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• 1994

A Hg(0.79)Cd(0.21)Te single crystal has been grown by the Traveling Heater Method(THM). Its zinc blend cubic structure is identified from the X-ray diffraction patterns and its lattice constant is determined to be $6.464 {\AA}$ using the least-square method of Cohen. From the values of the lattice constant, the composition x is determined to be 0.21. The electron density is calculated from the relative intensities of the scattered X-ray and compared with the theoretically calculated values. From the electron density distribution, it is shown that the crystal binding of Hg(1-x)Cd(x)Te(MCT) is mainly covalent and has tetrahedron bonds between adjacent atoms.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.2
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• pp.88-93
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• 1994

We fabricated a large-scale photovoltaic device for detecting-3-5$\mu$m IR, by forming of n$^{+}$-p junction in the $Hg_{1-x}Cd_{x}$Te (MCT) layer which was grown by LPE on CdTe substrate. The composition x of the MCT epitaxial layer was 0.295 and the hole concentration was 1.3${\times}10^{13}/cm^{4}$. The n$^{+}$-p junction was formed by B+ implantation at 100 keV with a does 3${\times}10^{11}/cm^{2}. The n$^{+}$ region has a circular shape with 2.68mm diameter. The vacuum-evaporated ZnS with resistivity of 2${\times}10^{4}{\Omega}$cm is used as an insulating layer over the epitaxial layer. ZnS plays the role of the anti-reflection coating transmitting more than 90% of 3~5$\mu$m IR. For ohmic contacts, gole was used for p-MCT and indium was used for n$^{+}$-MCT. The fabrication took 5 photolithographic masks and all the processing temperatures of the MCT wafer were below 90$^{\circ}C$. The R,A of the fabricated devices was 7500${\Omega}cm^{2}$. The carrier lifetime of the devices was estimated 2.5ns. The junction was linearly-graded and the concentration slope was measured to be 1.7${\times}10^{17}/{\mu}m$. the normalized detectivity in 3~5$\mu$m IR was 1${\times}10^{11}cmHz^{12}$/W, which is sufficient for real application.