• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.277-277
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• 2010

We present facile chemical route stabilizing dispersion of carboxylated single-Walled carbon nanotubes (SWCNTs) in ZnOsol prepared by using diethanolamine as a stabilizer. The dispersion was stabilized via capping of carboxyl groups on the SWCNT surface by a titania layer. We also demonstrated that the conductivity of the films prepared P3/$TiO_2$/ZnO as enhanced by therml treatment, and the thermal stbility of the film improved hybridization with ZnO sol pristine P3, P3/$SiO_2$ and P3/$TiO_2$ hybrid films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.41-41
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• 2010

We present facile chemical route stabilizing dispersion of carboxylated single-walled carbon nanotubes (SWCNTs) in ZnOsol prepared by using diethanolamine as a stabilizer. The dispersion was stabilized via capping of carboxyl groups on the SWCNT surface by a titania layer. We also demonstrated that the conductivity of the films prepared P3/$TiO_2$/ZnO as enhanced by therml treatment, and thethermal stbility of the film improved hybridization with ZnO sol pristine P3, P3/$SiO_2$ and P3/$TiO_2$ hybrid films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Journal of Sensor Science and Technology
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• v.30 no.4
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• pp.191-195
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• 2021

Pure ZnFe₂O₄ and Fe₂O₃-ZnFe₂O₄ hetero-composite spheres were prepared by ultrasonic spray pyrolysis of a solution containing Zn- and Fe-nitrates. Additionally, the sensing characteristics of these spheres in the presence of 5 ppm ethanol, benzene, p-xylene, toluene, and CO (within the temperature range of 275-350 ℃) were investigated. The Fe₂O₃-ZnFe₂O₄ hetero-composite sensor with a cation ratio of [Zn]:[Fe]=1:3 exhibited a high response (resistance ratio = 140.2) and selectivity (response to p-xylene/response to ethanol = 3.4) to 5 ppm p-xylene at 300 ℃, whereas the pure ZnFe₂O₄ sensor showed a comparatively lower gas response and selectivity. The reasons for the superior response and selectivity to p-xylene in Fe₂O₃-ZnFe₂O₄ hetero-composite sensor were discussed in relation to the electronic sensitization due to charge transfer at Fe₂O₃-ZnFe₂O₄ interface and Fe₂O₃-induced catalytic promotion of gas sensing reaction. The sensor can be used to monitor harmful volatile organic compounds and indoor air pollutants.

• Nuclear Engineering and Technology
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• v.49 no.5
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• pp.996-1005
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• 2017

In this paper, nuclear data for cross sections of the $^{64}Zn(n,2n)^{63}Zn$, $^{64}Zn(n,3n)^{62}Zn$, $^{64}Zn(n,p)^{64}Cu$, $^{66}Zn(n,2n)^{65}Zn$, $^{66}Zn(n,p)^{66}Cu$, $^{67}Zn(n,p)^{67}Cu$, $^{68}Zn(n,p)^{68}Cu$, and $^{68}Zn(n,{\alpha})^{65}Ni$ reactions were studied for neutron energies up to 40 MeV. In the nuclear model calculations, TALYS 1.6, ALICE/ASH, and EMPIRE 3.2 codes were used. Furthermore, the nuclear data for the (n,2n) and (n,p) reaction channels were also calculated using various cross-section systematics at energies around 14-15 MeV. The code calculations were analyzed and obtained using the different level densities in the exciton model and the geometry-dependent hybrid model. The results obtained from the excitation function calculations are discussed and compared with literature experimental data, ENDF/B-VII.1, and the TENDL-2015 evaluated data.

• Journal of Animal Science and Technology
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• v.66 no.1
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• pp.125-134
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• 2024

In this research, the growth efficiency, nutritional utilization, fecal microbial levels, and fecal score of weaned pigs were evaluated using therapeutic zinc oxide (ZnO) and zinc aspartic acid chelate (Zn-Asp). In a 42-day feeding trial, 60 weaned pigs ([Yorkshire × Landrace] × Duroc) were arbitrarily allotted (age: 21 days; 7.01 ± 0.65 kg preliminary body weight) to 3 different treatment groups with 5 repetitions (2 male and 2 female piglets) in each pen. The trial had 2 different phases, including 1-21 days as phase 1, and 22-42 days as phase 2. The nutritional treatments were: basal diet as control (CON), basal diet incorporated with 3,000 ppm ZnO as TRT1, and basal diet incorporated with 750 ppm Zn-Asp as TRT2. In comparison to the CON group, the pigs in the TRT1 and TRT2 groups had greater (p < 0.05) body weight on day 42; an average daily gain, and an average daily feed intake on days 22-42. Furthermore, during days 1-42, the average daily gain in the treatment groups trended higher (p < 0.05) than in the CON group. Additionally, the fecal score decreased (p < 0.05) at week 6, the lactic acid bacteria count tended to increase (p < 0.05), and coliform bacteria presented a trend in reduction (p < 0.05) in the TRT1 and TRT2 groups compared to the CON group. However, there was no difference in nutrient utilization (p > 0.05) among the dietary treatments. Briefly, the therapeutic ZnO and Zn-Asp nutritional approaches could decrease fecal score and coliform bacteria, increase lactic acid bacteria, and improve growth efficiency; moreover, Zn-Asp (750 ppm) can perform a comparable role to therapeutic ZnO (3,000 ppm). So we can use Zn-Asp (750 ppm) instead of therapeutic ZnO (3,000 ppm) for the better performance of weaning pigs and the reduction of environmental pollution, as therapeutic ZnO is responsible for environmental pollution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.151-155
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• 2014

We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

• Journal of Soil and Groundwater Environment
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• v.11 no.1
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• pp.23-36
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• 2006

Experimental leaching of tailings was performed as a function of times (1, 2, 4, 7, 14, 21 and 30 days) in the laboratory using reaction solutions equilibrated to three different pH set-points (pHs 1,3 and 5). The initial pHs of 5 and 3 stabilized at either 4.6-6.1 or 2.8-3.5 in 2 days and decrease gradually with time afterwards. The results of the leaching tests indicate that the significant increase in the sulfate concentrations and in acidity after 7 days of leaching results from the oxidation of sulfide minerals. There were no significant variations in the extractable Pb found in the leach solutions of pH 5 and 3 within the reaction time (1-30 days), while Zn, Cd and Cu concentrations tend to significantly increase with time. In tailings leaching at an initial pH=1, two trends were observed: i) The 'Zn-type' (Zn, Cd and Cu), with increasing concentrations between days 1 and 30, corresponding to the expected trend when continuous dissolution is the dominant process, ii) the 'Pb-type' (Pb), with decreasing concentrations over time, suggesting rapid dissolution of a Pb source followed by the precipitation of 'anglesite' in relation to the large increase in dissolved sulfates. The high sulfate concentrations were coupled with high concentrations of released Fe, Zn and Cd. Release of Zn and Cd and acidity from these leaching experiments can potentially pose adverse impact to surface and groundwater qualities in the surrounding environment. The kinetic problems could be the important factor which leads to increasing concentrations of trace metals in the runoff water.

• Journal of the Korean institute of surface engineering
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• v.19 no.4
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• pp.133-139
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• 1986

The effects of alternating voltage, $Cl^-$ ion and pH on the corrosion of Zn and Zn-Fe alloys have been investigated by using electrochemical techniques in $Ca(OH)_2$ solutions. The passive film $Zn(OH)_2$ was initially formed on the Zn surface and gradually transformed to $Ca(Zn(OH)_3)_2{\cdot}2H_2O$, which was identified with the X-ray diffraction method, SEM micrograph and EPMA. The passivity current increased with increasing alternating voltage and decrease AC frequency. ${\xi}$ phase in Zn-Fe alloys reduced the effects of AC. The effect of $Cl^-$ ion on the passivity current of Zn was similar to the AC effect, resulting in pits on Zn. It was also found that the passive region of Zn decreased rapidly below pH 10.3 of the solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.120-121
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• 2006

To investigate the ZnO thin films which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. Al sputtering process of ZnO thin films substrate temperature, work pressure respectively is $100^{\circ}C$ and 15 mTorr, and the purity of target is ZnO 5N. The ZnO thin films were in-situ annealed at $600^{\circ}C$, $800^{\circ}C$ in $O_2$ atmosphere. Phosphorus (P) and arsenic (As) were diffused into ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5{\times}10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAS_2$. Those diffusion was perform at $650^{\circ}C$ during 3hr. We confirmed that p-type properties of ZnO thin films were concerned with dopant sources rather than diffusion temperature.