• 한국재료학회지
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• 제24권10호
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• pp.565-571
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• 2014

Nitrogen-doped ZnO nanoparticle-carbon nanofiber composites were prepared using electrospinning. As the relative amounts of N-doped ZnO nanoparticles in the composites were controlled to levels of 3.4, 9.6, and 13.8 wt%, the morphological, structural, and chemical properties of the composites were characterized by means of field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). In particular, the carbon nanofiber composites containing 13.8 wt% N-doped ZnO nanoparticles exhibited superior catalytic properties, making them suitable for use as counter electrodes in dye-sensitized solar cells (DSSCs). This result can be attributed to the enhanced surface roughness of the composites, which offers sites for $I_3{^-}$ ion reductions and the formation of Zn3N2 phases that facilitate electron transfer. Therefore, DSSCs fabricated with 13.8 wt% N-doped ZnO nanoparticle-carbon nanofiber composites showed high current density ($16.3mA/cm^2$), high fill factor (57.8%), and excellent power-conversion efficiency (6.69%); at the same time, these DSSCs displayed power-conversion efficiency almost identical to that of DSSCs fabricated with a pure Pt counter electrode (6.57%).

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.575-579
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• 2008

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Applied Biological Chemistry
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• 제32권4호
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• pp.386-392
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• 1989

4종류(種類)의 한국산(韓國産) 천연(天然)제오라이트를 사용(使用)하여 $1{\sim}7{\times}10^{-3}N$ 농도(濃度)의 $NH_4\;^+,Zn^{2+}$ 및 그것들의 혼합용액내(混合溶液內)에서 $NH_4\;^+$과 $Zn^{2+}$의 흡착실험(吸着實驗)을 하였다. 실험(實驗)에 사용(使用)된 제오라이트의 주광물(主鑛物)은 mordenite, clinoptilolite, mordenite를 함유(含有)한 clinoptilolite 및 clinoptlolite를 함유(含有)한 mordenite였다. 모든 시료에서 $Zn^{2+}$에 비(比)해 $NH_4\;^+$이 많이 흡착(吸着)되었고 그것들의 흡착량(吸着量)은 고농도(高濃度)에서 감소하는 경향이었다. 그러나 그 감소의 정도는 $NH_4\;^+$은 경미한 반면 $Zn^{2+}$은 심하였다. $Zn^{2+}$의 흡착량(吸着量)은 $Zn^{2+}$의 단일 흡착시(吸着時)에 비(比)해 $NH_4\;^+$이 공존할 때 감소하였으나 $NH_4\;^+$의 흡착(吸着)은 $Zn^{2+}$에 영향을 받지 않았다. 시료간 $Zn^{2+}$에 대한 $NH_4\;^+$의 선택성(選擇性)은 mordenite>clinoptilolite를 함유(含有)한 mordenite>clinoptilolite>mordenite를 함유(含有)한 clinoptilolite 순으로 높았다. $3{\times}10^{-3}N$의 $1\;:\;1\;NH_4CI-ZnCl_2$ 용액(溶液)으로 연속 6회 세척하였을 때 제오라이트에 의한 $NH_4\;^+$ 총 흡착량(吸着量)은 $43.7{\sim}50.4me/100g$이었으며, $Zn^{2+}$의 총 흡착량은 $6.6{\sim}17.0me/100g$이었다. 이상의 결과(結果)로부터 mordenite와 clinoptilolite 특히 mordenite는 도시폐수중에 함유(含有)된 $NH_4\;^+$의 제거(除去)에 효과적일 것으로 사료되며 도시폐수에 처리된 제오라이트는 비료자원(肥料資源)이 될 수 있을 것으로 추정된다.

• 대한화학회지
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• 제46권6호
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• pp.502-508
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• 2002

본 실험은 N-Carbamoylglycine의 농도 결정에 PET sensor를 응용한 것이다.N-Carbamoylglycine이 금속 이온에 리간드로 작용하면서 착물을 만들고 있는 fluorophore의 luminescence intensity를 변화시킬수 있고 이를 통해 농도결정에 이용할 수 있다. 사용한 금속이 온은 $Ni^{2+}$, $Cu^{2+}$ 그리고 $Zn^{2+}$이며 비교대상으로 아세트산을 사용하여 선택성을 확인하였다. $Ni^{2+}$ 이온은 음이온 리간드에 의해서 eT mechanism 변화를 보여주었으며 , $Cu^{2+}$이온은 아세트산과 N-Carbamoylglycine을 구별하는 선택성을 가지고 있으며, $Zn^{2+}$이온은 매우 예민한 luminscence intensity 변화를 일으키는 것으로 나타났다.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.444-448
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• 2010

Based on first-principles calculations, we study the magnetic properties of Co, Ni, Fe, V, and Mn impurities in ZnO. The stabilities of the ferromagnetic state and the magnetic moment of each impurity largely depend on the amount of doped electron or hole. For lightly doped n-type ZnO, it is found that the doping of Ni ions is the most effective for inducing ferromagnetism, while Fe ions show the most stable ferromagnetic couplings for heavily doped n-type samples. The characteristics of the magnetic interactions of Co ions are similar with those of Fe ions, but Co ions require much larger amount of doped electron than Fe ions to show the ferromagnetic couplings. The ferromagnetic coupling between Mn and V ions is unstable in n-type conditions.

• Bulletin of the Korean Chemical Society
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• 제29권6호
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• pp.1243-1246
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• 2008

• 한국결정성장학회지
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• 제17권5호
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• pp.187-191
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• 2007

The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of $SiO_2,\;SiN_x$ and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with $SiN_x$ were $20.2cm^2V^{-1}s^{-1}\;and\;5{\times}10^6$ respectively which is higher than those previously reported. The device adoptable values of the mobility of $1.37cm^2V^{-1}s^{-1}$ and the on/off ratio of $6{\times}10^3$ were evaluated from the device with organic PVP dielectric.

• 한국자기학회지
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• 제14권1호
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• pp.18-24
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• 2004

Fe(N $O_3$)$_3$$.$9$H_2O$, Ni(N $O_3$)$_2$.6$H_2O$, Zn(N $O_3$)$_2$$.$6$H_2O$와 같은 질산금속염들을 습식법의 일종인 습식 직접 합성법을 이용하여 Ni-Zn ferrite 분말로 합성하였다. 분말의 화학조성은(N $i_{0.284}$F $e_{0.053}$Z $n_{0.663}$)F $e_2$ $O_4$로 하였으며, 고투자율 재료의 영역에 목표를 두었다. 습식 직접 합성법으로 시편을 제조하기 위하여 측량된 질산금속염들을 반응 용기 내에서 NaOH로 침전시키면서 9$0^{\circ}C$의 합성온도로 8시간 동안 교반.합성하였다. 가소 온도는 $700^{\circ}C$로 하여 2시간 유지시켰고, 소결온도는 11$50^{\circ}C$-12$50^{\circ}C$의 범위에서 각각 2시간 유지시켰다. 또 금속산화물을 출발물질로 하여 동일한 조성을 가지는 분말을 습식볼밀링하여 제조하였으며, 두 가지의 공정으로 합성된 분말의 특성과 소결체의 전자기적 특성을 비교.연구하였다. 동일 조건일 경우, 습식 직접 합성법으로 제조하면 입도분포가 좁고, 고순도이며, 미분말인 페라이트 분말을 얻을 수 있었으며 소결체의 특성 또한 비교적 높은 투자율과 자화 값을 나타내었다.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.315-315
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• 2013

We report the electronic structure modification in the swift heavy ion (SHI) irradiated N-doped ZnO thin films prepared by RF sputtering from ZnO target in different ratio of Ar/$N_2$ gas mixture using highly pure $N_2$ gas. The different N-ZnO thin lms were then irradiated with 120 MeV Ag ion beam with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$ and characterized by XRD and near edge X-ray absorption ne structure (NEXAFS) at N and O K-edges. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization and also the bonding of N ions with Zn and O ions. The minimum value of resistivity of $790{\Omega}cm$, a Hall mobility of $22cm^2V^-1s^-1$ and the carrier concentration of $3.6{\times}10^{14}cm^{-3}$ were yielded at 75% $N_2$. X-ray diffraction (XRD) measurements revealed that N-doped ZnO films had the preferential orientation of (002) plane for all samples, while crystallinity start decreasing at 32.5% $N_2$. The average crystallite size varies from 5.7 to 8.2 nm for 75% and then decreases to 7.8 nm for 80% $Ar:N_2$ ratio.