• Korean Journal of Materials Research
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• v.23 no.11
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• pp.613-619
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• 2013

$Cu_2ZnSn(S_x,Se_{1-x})_4$ (CZTSSe) thin films were prepared by sulfurization of evaporated precursor thin films. Precursor was prepared using evaporation method at room temperature. The sulfurization was carried out in a graphite box with S powder at different temperatures. The temperatures were varied in a four step process from $520^{\circ}C$ to $580^{\circ}C$. The effects of the sulfurization temperature on the micro-structural, morphological, and compositional properties of the CZTSSe thin films were investigated using X-ray diffraction (XRD), Raman spectra, field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). The XRD and Raman results showed that the sulfurized thin films had a single kesterite crystal CZTSSe. From the FE-SEM and TEM results, the $Mo(S_x,Se_{1-x})_2$ (MoSSe) interfacial layers of the sulfurized CZTS thin films were observed and their thickness was seen to increase with increasing sulfurization temperature. The microstructures of the CZTSSe thin films were strongly related to the sulfurization temperatures. The voids in the CZTSSe thin films increased with the increasing sulfurization temperature.

• Korean Journal of Materials Research
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• v.22 no.5
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• pp.259-273
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• 2012

Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

• Journal of Korean Society of Forest Science
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• v.88 no.4
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• pp.510-522
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• 1999

The air pollutants ; $SO_2$, $SO{_4}^{-2}$, $NO{_3}^-$, $Cl^-$ are absorbed into soils through falling with dusts and rain from the atmosphere. The sources of heavy metal contaminants in the environments are agricultural and horticultural materials, sewage sludges, fossil fuel combustion, metallurgical industries, electronics and waste disposal etc.. The soils and hydrosphere can be polluted on the way of the circulation of these heavy metals. Studied pollutant anions are $SO{_4}^{-2}$, $NO{_3}^-$ and $Cl^-$ and heavy metals are Se, Mo, Zn, Cd, Pb, Mn, Cr, Co, V, As, Cu and Ni which are the elements to be concerned with the essentials for plants, with animal and human health. This study is with the aim of selecting the species of roadside trees and green space trees which have excellent absorption of air pollutants and heavy metals from the atmosphere and the soils in the urban area. Two areas are designated to carry out this study : urban area ; Kwangju city and rural area ; the yard of Forest Environment Institute of Chollanam-do, at Sanje-ri, Sampo-myum, Naju city, Chollanam-do (23km away from Kwangju). This study is carried out to understand the movement of anions and heavy metals from the soils to the trees in both areas, the absorption of anions and heavy metals from atmosphere into leaves and the amounts of anions and heavy metals in leaves and fine roots(< 1mm dia.) of roadside trees and green space trees in Kwangju and trees in the yard of Forest Environment Institute of Chollanam-do. The tree species selected for this study in both areas are Ginkgo biloba, Quercus acutissima, Cedrus deodara, Platanus occidentalis, Robinia pseudoacacia, Alnus japonica. Metasequoia glyptostroboides. Zekova serrata. Prunus serrulata var. spontanea, and Pinus densiflora. The results of the study are as follows : 1. $SO{_4}^{-2}$, $NO{_3}^-$ and $Cl^-$ concentrations are higher in the soils of the urban area than in those of the rural area, and $NO{_3}^-$ and $SO{_4}^{-2}$ are higher in the leaves than in the roots due to the absorption of the these pollutants through the stomata. 2. Ginkgo biloba, Robinia pseudoacacia. Zekova serrata, Quercus acutissima, and Platanus occidentalis can be adequated to the roadside trees and the environmental trees due to their good absorption of $NO{_3}^-$ and $SO{_4}^{-2}$. 3. Heavy metals in the soils of both areas are in the order of Mn > Zn > V > Cr > Pb > Ni > Cu > Mo> Cd, and in the leaves and roots of the trees in the both areas are in the order of Mn>Zn>Cr>Cu>V>Ni. Both orders are similar ones except V. There are more in the urban soils than in the rural soils in amount of Mn, Zn, Pb, V, Cu. 4. It is supposed that there is no antagonism between Mn and Zn in this study. 5. Se, Co and As are not detected in the soils, the leaves and the roots in both areas. Sn, Mo, Cd and Pb are also not detected in the leaves and roots in spite of considerable amount in the soils of both areas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.625-630
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• 2017

ZnS was chemically deposited as a buffer layer alternative to CdS, for use as a Cd-free buffer layer in $Cu(In_{1-x}Ga_x)Se_2$ (CIGS) solar cells. The deposition of a thin film of ZnS was carried out by chemical bath deposition, following which the structural and optical properties of the ZnS layer were studied. For the experiments, zinc sulfate hepta-hydrate ($ZnSO_4{\cdot}7H_2O$), thiourea ($SC(NH_2)_2$), and ammonia ($NH_4OH$) were used as the reacting agents. The mole concentrations of $ZnSO_4$ and $SC(NH_2)_2$ were fixed at 0.03 M and 0.8 M, respectively, while that of ammonia, which acts as a complexing agent, was varied from 0.3 M to 3.5 M. By varying the mole concentration of ammonia, optimal values for parameters like optical transmission, deposition rate, and surface morphology were determined. For the fixed mole concentrations of $0.03M\;ZnSO_4{\cdot}7H_2O$ and $0.8M\;SC(NH_2)_2$, it was established that 3.0 M of ammonia could provide optimal values of the deposition rate (5.5 nm/min), average optical transmittance (81%), and energy band gap (3.81 eV), rendering the chemically deposited ZnS suitable for use as a Cd-free buffer layer in CIGS solar cells.

• Current Photovoltaic Research
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• v.9 no.3
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• pp.84-95
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• 2021

The power conversion efficiency of Cu₂ZnSnSe₄ (CZTSe) solar cells depends on the absorber layer thickness; however, changes in the characteristics of the cells with varying absorber layer thickness are unclear. In this study, we investigated the changes in the characteristics of CZTSe solar cells for varying absorber layer thickness. Five absorber thicknesses were employed: CZTSe1 2.78 ㎛, CZTSe2 1.01 ㎛, CZTSe3 0.55 ㎛, CZTSe4 0.29 ㎛, and CZTSe5 0.15-0.23 ㎛. The efficiency of the CZTSe solar cells decreased as the absorber thickness decreased, resulting in power conversion efficiencies of 10.45% (CZTSe1), 8.67% (CZTSe2), 7.14% (CZTSe3), 3.44% (CZTSe4), and 1.54% (CZTSe5). As the thickness of the CZTSe absorber layer decreased, the electron-hole recombination at the grain boundaries and the absorber-back-contact interface increased. This caused an increase in the current loss, owing to light loss in the long-wavelength region. In addition, as the thickness of the CZTSe absorber layer decreased, more ZnSe was produced, and the resulting defects and defect clusters led to an open-circuit voltage loss.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.383-384
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• 2007

The nano and micro-sized $ZnGa_2O_4$ phosphor were prepared by precipitation method and solid-state method. The luminescence, formation process and structure of phosphor powders were investigated by means of XRD, SEM and PL. The result of XRD analysis showed that $ZnGa_2O_4$ spinel structure was formed at as-prepared in the case of precipitation method. However, micro-sized phosphor was required high heating treatment to have a satisfactory spinel structure. The CL intensity of nano-sized phosphor was about 4-fold higher than that of micro-sized phosphor. The emission spectra of all $ZnGa_2O_4$ phosphor show a self activated blue emission band at around 420 nm in the wide range of 300~600 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.426.2-426.2
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• 2016

Numerous of researches are being conducted to improve the efficiency of $Cu_2ZnSnSe_4$ (CZTSe)-based photovoltaic devices, which is one of the most promising candidates for low cost and environment-friendly solar cells. In this work, we concentrate on the back contact of the devices. A proper thickness of $MoSe_2$ in back contact structure is believed to enhance adhesion and ohmic contact between Mo back contact and absorber layer. Nevertheless, too thick $MoSe_2$ layers that are grown during high-temperature selenization process can impede the current collection, thus resulting in low cell performance. By applying molybdenum nitride as a barrier in back contact structure, we were able to control the thickness of $MoSe_2$ layer, which resulted in lower series resistance and higher fill factor of CZTSe devices. The phase transformation of Mo-N binary system was systematically studied by changing $N_2$ concentration during the sputtering process. With a proper phase of Mo-N fabricated by using an adequate partial pressure of $N_2$, the efficiency of CZTSe solar cells as high as 8.31% was achieved while the average efficiency was improved by about 2% with respect to that of the referent cells where no barrier layer was employed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.401-404
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• 1997

We prepared 0~20mo1% WO$_3$added ZnO composite ceramics in order to promote a CO gas sensitivity. Using SE,. we observed the microstructure of sample. The resistances of sample were measured by High Voltage Measure/source Unit in the temperature range of +5V~-5V. The measured 1000ppm CO sensitivities of pure ZnO were about 1~4.3, and the measured 1000ppm CO sensitivities of ZnO-WO$_3$composite ceramics were about 1~8.2. Therefore, the 1000ppm CO sensitivities of ZnO-WO$_3$composite ceramics were about 2 times larger than that of pure ZnO.

• Journal of Korea Foundry Society
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• v.33 no.4
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• pp.171-180
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• 2013

The effects of alloying elements on the solidification characteristics, microstructure, thermal conductivity, and tensile strength of Al-Zn-Mg-Fe alloys were investigated for the development of high strength and high thermal conductivity aluminium alloy for die casting. The amounts of Zn and Mg in Al-Zn-Mg-Fe alloys had little effect on the liquidus/solidus temperature, the latent heat for solidification, the energy release for solidification and the fluidity of Al-Zn-Mg-Fe alloys. Thermo-physical modelling of Al-Zn-Mg-Fe alloys by the JMatPro program showed $MgZn_2$, AlCuMgZn and $Al_3Fe$ phases in the microstructure of the alloys. Increased amounts of Mg in Al-Zn-Mg-Fe alloys resulted in phase transformation, such as $MgZn_2{\Rightarrow}MgZn_2+AlCuMgZn{\Rightarrow}AlCuMgZn$ in the microstructure of the alloys. Increased amounts of Zn and Mg in Al-Zn-Mg-Fe alloys resulted in a gradual reduction of the thermal conductivity of the alloys. Increased amounts of Zn and Mg in Al-Zn-Mg-Fe alloys had little effect on the tensile strength of the alloys.

• Korean Journal of Materials Research
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• v.14 no.5
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• pp.328-333
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• 2004

Transparent ZnO:Al conductor films for the optoelectronic devices were deposited by using the capacitively coupled DC magnetron sputtering method. The effect of Al doping concentration and discharge power on the electrical and optical properties of the films was studied. The film resistivity of $8.5${\times}$10^{-4}$ $\Omega$-cm was obtained at the discharge power of 40 W with the ZnO target doped with 2 wt% $Al_2$$_O3$. The transmittance of the 840 nm thick film was 91.7% in the visible waves. Increasing doping concentration of 3 wt% $Al_2$$O_3$ in ZnO target results in significant decrease of film resistivity, which may be due to the formation of $Al_2$$O_3$ particles in the as-deposited ZnO:Al film and the reduced ZnO grain sizes. Increasing DC power from 40 to 60 W increases deposition rate by more than 50%, but can induce high defect density in the film, resulting in higher film resistivity.