• 한국자기학회지
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• 제18권2호
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• pp.75-78
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• 2008

$AB_2X_4$((A, B)=Transition Metal, X=O, S, Se) 물질에서의 8면체 자리의 이온 거동과 4면체 자리 이온과의 상호작용에 대하여 많은 연구가 이루어지고 있다. 본 연구에서는 4면체 자리에 비자성 이온인 Zn 이온을 치환함에 따른 자기구조의 변화를 관측하여 8면체 자리의 자기구조를 분석하고자 하였다. Cr이온의 일부를 Fe로 치환한 $[Co_{0.9}Zn_{0.1}]_A[Cr_{1.98}{^{57}Fe_{0.02}}]_BO_4$의 닐온도($T_N$는 90K로 $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$ 비하여 감소하였다. 4.2 K에서의 초미세자기장값의 분석결과, 초미세자기장값의 작은 차이를 보이는 잘 분리된 2-set 형태로 나타났으며, $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$의 초미세자기장값은 488, 478 kOe 인데 반하여, $Co_{0.9}Zn_{0.1}Cr_{1.98}{^{57}Fe_{0.02}}O_4$의 초미세자기장값은 $B_1=486$, $B_2=468$ kOe으로 나타났다. Zn 이온의 치환에 따라서 초미세자기장값의 변화를 알 수 있었다. 이러한 결과로 인하여, Zn 이온이 x=0.1 치환된 물질의 경우, 스핀재정렬온도($T_S$)가 18K으로 감소함을 알 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1019-1021
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• 2002

In place of $Alq_3$ for EL, various Zn-Complex with fluorenscent chromophores were synthesized. PL of Zn-Complex substituted with electron donor group at 2 or 4 position occurred to bathochromic shift of emission$(\lambda_{max})$ and PL intensity was weaker than Zn-Complex non-substituted with electron donor group.

• 한국가정과학회지
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• 제9권3호
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• pp.69-79
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• 2006

The previous studies on the intake of trace elements performed in Korea were only concerned about major elements like Fe, Zn or Cu. There is little data about the intake of minor elements like Mn, Se, Mo or Cr. And most of the data were obtained by calculation using Food Composition Tables or by analysis using atomic absorption spectrophotometers (AAS). The purpose of this study, therefore, was to evaluate the dietary intake of seven trace elements, Fe, Zn, Cu, Mn, Se, Mo, and Cr of Korean adult wonmen and to compare the data between analyzed using ICP-MS (or ICP-AES) and calculated by the CAN-Pro (or Food Composition Table). A total of nineteen adult women participated voluntarily in this study and collected one-tenth of the foods that they consumed for three consecutive days. Analyzed intake of Fe of the subjects was $6.94{\pm}2.18$ (calculated, $18.87{\pm}4.50$) mg/day, that of Ze was $9.35{\pm}4.95$ (calculated, $8.35{\pm}2.87mg/day$), that of Cu was $1.18{\pm}0.26\;(1.11{\pm}0.32mg/day)$, that of Mn was $3.69{\pm}0.69\;(2.83{\pm}1.68mg/day)$, that of Se was $41.93{\pm}9.28$ (calculated, $27.58{\pm}6.97{\mu}g/day$), that of Mo was $134.0{\pm}49.1{\mu}g/day$, and that of Cr was $136.5{\pm}147.9{\mu}g/day$. The analyzed Fe intake of the subjects did not meet Estimated Average Requirement (EAR) nor Recommended Intakes (RI) for Korean women aged 20-29 years old. However, the analyzed intakes of the other six elements, Zn, Cu, Mn, Se, Mo, and Cr, seemed to meet each of the respective RIs. The analyzed Fe intake was significantly lower than the calculated one, in fact by 2.72 times, however, the analyzed intakes of the other elements, Mn and Se, were significantly higher and those of Zn and Cu were similar than each of the calculated ones. The difference of the data between analyzed and calculated intakes indicates that it is necessary to set up database on trace element contents of foods of the Food Composition Table and the CAN-Pro so as to have accuracy.

• Current Photovoltaic Research
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• 제5권1호
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• pp.20-24
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• 2017

Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.

• 대한지역사회영양학회지
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• 제17권2호
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• pp.146-155
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• 2012

This study aimed to measure and evaluate the intakes of four antioxidant trace elements, namely, Zn, Cu, Mn, and Se in 19-29y-old female university students in Korea. Diet data were collected by 3-day dietary records in 644 subjects. The mean age, height, weight and body mass index of the subjects were 20.08 years, 161.77 cm, 54.26 kg and $20.82kg/m^2$, respectively. The mean, median and 25th-75th percentile intakes of Zn, Cu, Mn, and Se in the subjects were 12.83 mg (12.40 mg, 9.59 to 15.34), 1.30 mg (1.27 mg, 1.00 to 1.57), 3.19 mg (3.12 mg, 2.45 to 3.86), and $50.90{\mu}g$ ($50.17{\mu}g$, 37.59 to 64.35), respectively. The proportion of subjects whose Mn intake was adequate or less was 62.89%, and the proportions of subjects whose Zn, Cu and Se intakes were at the estimated average requirements or less were 10.09, 4.97, and 39.60%, respectively. The major food group for dietary intakes of Zn, Cu, Mn, and Se was cereal, providing 8.55 mg (66.60%), 0.78 mg (59.93%), 2.09 mg (65.50%), and $16.83{\mu}g$ (32.43%), respectively. Many female university students were deficient in Mn and Se compared with the dietary reference intakes. Therefore, except for cereal, it is required to consume a diet consisted of various food sources for increasing the intakes of antioxidant trace minerals, especially animal food groups.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.431-431
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• 2016

Typical Cu(In,Ga)Se2 (CIGS)-based solar cells have a buffer layer between CIGS absorber layer and transparent ZnO front electrode, which plays an important role in improving the cell performance. Among various buffer materials, chemical bath deposition (CBD)-ZnS is being steadily studied to alternative to conventional CdS and the efficiency of CBD-ZnS/CIGS solar cell shows the comparable values with that of CdS/CIGS solar cell. The intriguing thing is that reversible changes occur after exposure to illumination due to the metastable defect states in completed ZnS/CIGS solar cell, which induces an improvement of solar cell performance. Thus, it implies that the understanding of metastable defects in CBD-ZnS/CIGS solar cell is important issue. In this study, we fabricate the ITO/i-ZnO/CBD-ZnS/CIGS/Mo/SLG solar cells by controlling the NH4OH mole concentration (from 2 M to 3.5 M) of CBD-ZnS buffer layer and observe their conversion efficiency with and without light soaking for 1 hr. From the results, NH4OH mole concentration and light exposure can significantly affect the CBD-ZnS/CIGS solar cell performance. In order to investigate that which layer can contain metastable defect states to influence on solar cell performance, impedance spectroscopy and capacitance profiling technique with exposure to illumination have been applied to CBD-ZnS/CIGS solar cell. These techniques give a very useful information on the density of states within the bandgap of CIGS, free carriers density, and light-induced metastable effects. Here, we present the rearranged charge distribution after exposure to illumination and suggest the origin of the metastable defect states in CBD-ZnS/CIGS solar cell.

• 한국재료학회지
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• 제29권9호
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• pp.553-558
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• 2019

$Cu_2ZnSn(S,Se)_4(CZTSSe)$ thin film solar cells areone of the most promising candidates for photovoltaic devices due to their earth-abundant composition, high absorption coefficient and appropriate band gap. The sputtering process is the main challenge to achieving high efficiency of CZTSSe solar cells for industrialization. In this study, we fabricated CZTSSe absorbers on Mo coated soda lime glass using different pressures during the annealing process. As an environmental strategy, the annealing process is performed with S and Se powder, without any toxic $H_2Se$ and/or $H_2S$ gases. Because CZTSSe thin films have a very narrow stable phase region, it is important to control the condition of the annealing process to achieve high efficiency of the solar cell. To identify the effect of process pressure during the sulfo-selenization, we experiment with varying initial pressure from 600 Torr to 800 Torr. We fabricate a CZTSSe thin film solar cell with 8.24 % efficiency, with 435 mV for open circuit voltage($V_{OC}$) and $36.98mA/cm^2$ for short circuit current density($J_{SC}$), under a highest process pressure of 800 Torr.

• 한국자기학회지
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• 제18권1호
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• pp.39-42
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• 2008

[ $AB_2X_4$ ]((A, B)=Transition Metal, X=O, S, Se) 물질에서의 8면체 자리의 이온 거동과 4면체 자리 이온과의 상호작용에 대하여 많은 연구가 이루어지고 있다. 본 연구에서는 4면체 자리에 비자성 이온인 Zn 이온을 치환함에 따른 자기구조의 변화를 관측하여 8면체 자리의 자기구조를 분석하고자 하였다. Cr이온의 일부를 Fe로 치환한 $[Co_{0.9}Zn_{0.1}]_A[Cr_{1.98}{^{57}Fe_{0.02}}]_BO_4$의 닐온도($T_N$는 90K로 $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$ 비하여 감소하였다. 4.2 K에서의 초미세자기장값의 분석결과, 초미세자기장값의 작은 차이를 보이는 잘 분리된 2-set 형태로 나타났으며, $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$의 초미세자기장값은 488, 478 kOe 인데 반하여, $Co_{0.9}Zn_{0.1}Cr_{1.98}{^{57}Fe_{0.02}}O_4$의 초미세자기장값은 $B_1=486$, $B_2=468$ kOe으로 나타났다. Zn 이온의 치환에 따라서 초미세자기장값의 변화를 알 수 있었다. 이러한 결과로 인하여, Zn 이온이 x=0.1 치환된 물질의 경우, 스핀재정렬온도($T_S$)가 18K으로 감소함을 알 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.263-266
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• 2004

The stochiometric mix of evaporating materials for the $ZnGa_2Se_4$ single crystal thin films were prepared from horizental furnace. The polycrystal structure obtaind from the power x-ray diffraction was defect chalcopyrite. The lattice costants $a_0\;and\;c_0\;were\;a_0=5.51\;A,\;c_0=10.98\;A$. To obtains the single crystal thin films, $ZnGa_2Se_4$ mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current(pc/dc), maximum allowable rower dissipation(MAPD), spectral response and response time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.552-556
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• 2002

The microstructure and electrical characteristics of A~C's ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $1130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6mm/min, respectively, were investigated. In the microstructure, A~C's ZnO varist-ors fabricated variable sintering condition was consisted of ZnO grain(ZnO), spinel phase$(Zn_{2.33}Sb_{0.67}O_4)$ Bi-rich $phase(Bi_{2}O_{3})$, wholly. Varistor voltage of A~C's ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B < C's ZnO varistors. C's ZnO varistor exhibited good characteristics that nonlinear exponent is 31.70. Leakage current of A~C's ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.