• 한국재료학회지
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• 제28권10호
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• pp.564-569
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• 2018

$Cu_2ZnSn(S,Se)_4$ (CZTSSe) films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu(CZT) precursor films. The precursor was dried in a capped state with aqueous NaOH solution. The CZT precursor films were sulfo-selenized in the S + Se vapor atmosphere. Sodium was doped during the sulfo-selenization treatment. The effect of sodium doping on the structural and electrical properties of the CZTSSe thin films were studied using FE-SEM(field-emission scanning electron microscopy), XRD(X-ray diffraction), XRF(X-ray fluorescence spectroscopy), dark current, SIMS(secondary ion mass spectrometry), conversion efficiency. The XRD, XRF, FE-SEM, Dark current, SIMS and cell efficiency results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the sodium doping. Further detailed analysis and discussion for effect of sodium doping on the properties CZTSSe thin films will be discussed.

• Applied Microscopy
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• 제25권3호
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• pp.82-89
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• 1995

지금까지의 실험결과에서 다음과 같은 요약할 수 있다. 1) 사원계 $Zn_{1-x}Mg_{x}S_y$ $S_{1-y}$(x=0.13, y=0.16) 에피층은 다소 불규칙한 성장을 나타내어 역삼각형의 결함과 길고 직선인 적층결함으로 형성된 수지상 형태가 발견되었다. 2)역삼각형 결함은 {111}면에 형성된 적층결함으로 둘러싸여 있고 내부에는 결함이 없으나 계면과 수직인 방향인 <001>방향으로 콘트라스트 차이를 이루는 밴드가 형성되었다. 3) 기판과 정합을 이루고 있고 결함이 없는 ZnSe 버퍼 층이 관찰되었으며 결함 및 므와레 줄무늬는 버퍼층과 4원계 에피층과의 계면에서 형성된다. 4) 4원계 에피층에 형성된 적층결함은 Mg 원소의 효과로 길이가 60nm 이상 폭이 40nm 이상의 넓은 간격을 이루고 있다. 5) 긴 적층결함으로 둘러쌓인 수지상 구조에는 국부적으로 주기를 이루며 강한 콘트라스트 차이를 나타내는 줄무늬가 관찰되는데, 이는 Mg 및 S의 국부적인 화학적 조성차이에 기인한 탄성 변형 효과로 생각된다.

• 대한전자공학회논문지
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• 제26권4호
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• pp.106-112
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• 1989

본 논문에서는 광섬유 전송로형 센서모델에 근거하여 전기/자기 광학 효과를 이용한 전압 및 전류측정시스템을 유전율 텐서에 의해 이론적으로 해석하고 실험하였다. 실험결과 BSO를 이용한 광전압 센서는 500V까지의 인가전압에 대해 2% 이하의 오차와 1,000V에서 최대 4.93%의 오차를 보였고 ZnSe를 이용한 광 전류 센서는 실효전류 1,000A까지에 대해 최대 4%의 오차를 보였다. 온도 특성은 $-5^{circ}C$~$60^{circ}C$의 온도 변화에 대해 전압센서 및 전류센서 각각 ${pm}1.8%,{pm}2.73%$로 계산되었다.

• Current Photovoltaic Research
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• 제3권2호
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.42.1-42.1
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• 2011

높은 광흡수 계수를 갖는Cu(In,Ga) $Se_2$ (CIGS) 화합물 박막 소재는 고효율 태양전지 양산을 위해 가장 전도유망한 재료이나 상대적으로 매장량이 적은 In 및 Ga을 사용한다는 소재적 한계가 있다. $Cu_2ZnSnSe_4$ (CZTSe) 혹은 $Cu_2ZnSnS_4$(CZTS)와 같은 Cu-Zn-Sn-Se계 화합물 반도체는 CIGS 내 희소원소인 In과 Ga이 범용원소인 Zn 및 Sn으로 대체된 소재로써 미래형 저가 태양전지 개발을 위해 활발히 연구되고 있는데, 그 화합물 조합에 따라 0.8 eV부터 1.5 eV까지의 에너지 밴드갭을 갖는 것으로 알려져 있다. 스퍼터링법에 기반한 2단계 공정에 의해 3.2%의 CZTSe 및 6.7%의 CZTS 태양전지 효율 달성이 보고된 바 있으며, 최근 비진공 방식을 이용하여 제조된 $Cu_2ZnSn(S,Se)_4$ (CZTSSe) 태양전지가 9.6%의 변환효율을 생산하여 세계 최고기록을 갱신한 바 있다. 반면, 동시진공증발법에 의한 Cu-Zn-Sn-Se계 연구는 박막 조성 조절이 상대적으로 용이하다는 장점에도 불구하고, 상대적으로 공개된 연구결과의 양이 적으며 그 효율에 대한 보고는 특히 미미하다. 본 연구에서는 동시진공증발법에 의한 CZTSe 박막 연구 결과를 바탕으로 Sn 손실을 최소화하기 위한 진공증발 공정을 최적화하였으며, 이를 통해 CZTSe 박막 태양전지를 제조하고 그 특성분석을 통해 5% 이상의 변환효율을 달성하였다.

• Journal of Advanced Marine Engineering and Technology
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• 제30권1호
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• pp.176-181
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• 2006

In this study, systematical investigations were carried out on crystal qualifies and optical properties of $ZnSe_{1-x}:Te_x$ (x=0.002-0.04) thin films frown by molecular beam epitaxy (MBE). The crystal qualifies and optical properties have been investigated by X-ray diffraction (XRD) and Photoluminescence (PL) measurements, respectively. From the XRD measurements, the crystallographic characteristics showed mediocre crystal quality with increasing the Te composition. From the PL measurements, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSe:Te epilayers. The efficient blue and green emission were attributed to the recombination of excitons trapped at isoelectronic isolated a single Te atom and $Te_n(n{\geq}2)$ clusters. respectively. The blue emission become dominant in Te tightly doped $ZnSe_{1-x}:Te_x$ $(Te=0.2\%)$ epilayers with increasing temperature. For the Te heavily doping condition $(Te=4.0\%)$, the dominant green emission could be observed at around 160K.

• Current Photovoltaic Research
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• 제3권1호
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• pp.32-38
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• 2015

CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.

• Asian-Australasian Journal of Animal Sciences
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• 제5권2호
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• pp.389-395
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• 1992

Nutritional status of trace minerals (Se, Cu and Zn) in goats grazed on the native pasture was investigated during 2 years in Luzon Island, Republic of the Philippines. Three regions (South, Central and North) were objected to collect the samples of blood of goats and forages on the pasture. Se content of major species forages in the pasture was $24.7{\mu}g/kg$ DM, and was clearly lower than the value ($200{\mu}g/kg$ DM) required commonly for ruminant feed. The Cu and Zn contents of all forage samples ranged from 7.6 to 24.3 and 11.4 to 50.6 mg/kg DM, respectively, and these values almost exceeded the dietary level required for sheep. The blood Se levels in about 55% of goats grazed alone were under the normal range ($20{\mu}g/l$), but it in goats fed some concentrates as a supplement were almost within a normal ranges ($20-200{\mu}g/l$), though the Cu content of forages almost exceeded the dietary level required commonly. The 4-13% of plasma samples of goats without supplement showed the Zn level below the lower limit (0.6 mg/l) of normal range. The Zn deficiency was mostly improved by the addition of a small amount of concentrates. From these results, it will be necessary to study about unstable Cu status of grazed goats in Luzon Island regarding an interaction of Cu and other elements known to relate to the malabsorption of dietary Cu.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.400-403
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• 2012

$Cu_2ZnSnSe_4$(CZTSe) is emerged as a promising material for thin-film solar cells because of non-toxic, inexpensive and earth abundant more than $Cu(In,Ga)Se_2$ materials. For fabricating compound semiconductor thin-film solar cells, CdS is widely used for a buffer layer which fabricated by a chemical bath deposition method (CBD). Through the experiment, we controlled deposition temperature and mol ratio of solution conditions to find the proper grain 크기 and exact composition. The optimum CdS layers were characterized in terms of surface morphology by using a scanning electron microscope (SEM) and atomic force microscope (AFM). The optimized CdS layer process was applied on CZTSe thin-films. The thickness of buffer layer related with device performance of solar cells which controlled by deposition time. Local surface potential of CdS/CZTSe thin-films was investigated by Kelvin probe force microscopy (KPFM). From these results, we can deduce local electric properties with different thickness of buffer layer on CZTSe thin-films. Therefore, we investigated the effect of CdS buffer layer thickness on the CZTSe thin-films for decreasing device losses. From this study, we can suggest buffer layer thickness which contributes to efficiencies and device performance of CZTSe thin-film solar cells.

• 한국재료학회지
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• 제30권4호
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• pp.204-210
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• 2020

ZnO thin films are of considerable interest because they can be customized by various coating technologies to have high electrical conductivity and high visible light transmittance. Therefore, ZnO thin films can be applied to various optoelectronic device applications such as transparent conducting thin films, solar cells and displays. In this study, ZnO rod and thin films are fabricated using aqueous chemical bath deposition (CBD), which is a low-cost method at low temperatures, and environmentally friendly. To investigate the structural, electrical and optical properties of ZnO for the presence of citrate ion, which can significantly affect crystal form of ZnO, various amounts of the citrate ion are added to the aqueous CBD ZnO reaction bath. As a result, ZnO crystals show a nanorod form without citrate, but a continuous thin film when citrate is above a certain concentration. In addition, as the citrate concentration increases, the electrical conductivity of the ZnO thin films increases, and is almost unchanged above a certain citrate concentration. Cu(In,Ga)Se₂ (CIGS) solar cell substrates are used to evaluate whether aqueous CBD ZnO thin films can be applicable to real devices. The performance of aqueous CBD ZnO thin films shows performance similar to that of a sputter-deposited ZnO:Al thin film as top transparent electrodes of CIGS solar cells.