• Title/Summary/Keyword: $ZnIn_2Se_4$

Search Result 232, Processing Time 0.03 seconds

Carrier Transport of Quantum Dot LED with Low-Work Function PEIE Polymer

  • Lee, Kyu Seung;Son, Dong Ick;Son, Suyeon;Shin, Dong Heon;Bae, Sukang;Choi, Won Kook
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.432.2-432.2
    • /
    • 2014
  • Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.

  • PDF

The Correlation between HTMA(Hair Tissue Mineral Analysis) Results and Obese Degree (모발미네랄분석결과와 비만도의 상관성)

  • Song, Jae-Chol;Lee, Jae-Sung;Lee, Kyung-Hee;Shin, Hyun-Taeg
    • Journal of Korean Medicine for Obesity Research
    • /
    • v.4 no.1
    • /
    • pp.67-80
    • /
    • 2004
  • Objectives: Obesity is a growing epidemic with subsequent health consequences leading not only to reduced quality of life but also to increased medical costs. Recently nutritional balances are emphasized in the field of obesity, and especially maintaining proper equilibriums of minerals. The correlation of minerals obtained from the method of HTMA(Hair Tissue Mineral Analysis) with obese degree has not been studied in Korea yet. We studied any significant difference of mineral concentrations and components according to the obese degree. Methods: 78 subjects were analyzed who visited Garosero clinic of oriental medicine to lose their weight from June to November 2004. We used BMI(Body Mass Index), PBF(Percent Body Fat), WHR(Waist-Hip Ratio) and abdominal circumference obtained by bio-electrical impedance analysis as an obese degree. And we analyzed correlation with mineral concentrations and ratios obtained from HTMA. Results & Conclusion: 1. Na, K, Zn, Se had significant correlation with obese degree in case of nutritional minerals from HTMA. Especially, K had high significance. 2. Toxic minerals from HTMA had no significance with obese degree. 3. Rb had significant correlation with obese degree in case of additional minerals from HTMA. 4. Among important ratios from HTMA, Na/K had significant correlation with obese degree, but Ca/K had correlation except PBF, and Na/Mg had correlation except WHR. 5. Among toxic ratios from HTMA, Se/Hg had significant correlation with obese degree, but S/Hg had correlation except BMI. 6. Na, K, Zn, Rb, Na/K, Ca/K had significant differences between obesity groups classfied by BMI. Ob II group had sinificant difference from NW group in cases of K, Zn, Rb, Na/K, and Ob II group had sinificant difference from OW group in case of Ca/K.

  • PDF

Study on In-doped ZnO films deposited by RF magnetron sputtering (RF 스퍼터링을 이용하여 증착한 In-doped ZnO 박막에 관한 연구)

  • Park, Se-Hun;Park, Sang-Eun;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 2008.11a
    • /
    • pp.92-92
    • /
    • 2008
  • ZIO(Indium-doped Zinc Oxide) 박막은 고밀도, 고순도 ZIO($In_2O_3$ : 3.33, 6.50, 9.54, 12.44, 15.22 wt%) 타겟 5개를 이용하여 RF 마그네트론법으로 기판온도 RT에서 non-alkali 유리 기판위에 증착하였다. 스퍼터 가스로서는 Ar 가스를 사용하였다. $In_2O_3$ 9.54 wt%인 타겟을 이용하여 RT에서 증착한 박막이 가장 낮은 비저항 $9.13{\times}10^{-4}{\Omega}cm$를 나타내었다. ZIO 박막의 전기적 특성은 Hall 효과 측정장비, 박막의 결정구조는 X-선 회절(XRD), 광학적 특성은 UV 측정장비를 사용하여 측정하였다.

  • PDF

Hydrodynamic and Atmospheric Effects on Corrosion of Zinc in Borate Buffer Solution (Borate 완충용액에서 아연의 부식에 대한 대류와 대기의 영향)

  • Chung, Se-Jin;Kim, Youn-Kyoo
    • Journal of the Korean Chemical Society
    • /
    • v.55 no.4
    • /
    • pp.575-580
    • /
    • 2011
  • It was investigated into the effects on zinc corrosion of the rotation speed of Zn-RDE and the oxygen concentration in borate buffer solution. Zinc corrosion was heavily influenced on the rotation speed of electrode and the oxygen concentration. We have suggested the disproportion reaction following the reversible one electron transfer as the corrosion mechanism of zinc.

Effect of SiO2 Buffer Layer Thickness on the Device Reliability of the Amorphous InGaZnO Pseudo-MOS Field Effect Transistor (SiO2 완충층 두께에 따른 비정질 InGaZnO Pseudo-MOS Field Effect Transistor의 신뢰성 평가)

  • Lee, Se-Won;Hwang, Yeong-Hyeon;Cho, Won-Ju
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.25 no.1
    • /
    • pp.24-28
    • /
    • 2012
  • In this study, we fabricated an amorphous InGaZnO pseudo-MOS transistor (a-IGZO ${\Psi}$-MOSFET) with a stacked $Si_3N_4/SiO_2$ (NO) gate dielectric and evaluated reliability of the devices with various thicknesses of a $SiO_2$ buffer layer. The roles of a $SiO_2$ buffer layer are improving the interface states and preventing degradation caused by the injection of photo-created holes because of a small valance band offset of amorphous IGZO and $Si_3N_4$. Meanwhile, excellent electrical properties were obtained for a device with 10-nm-thick $SiO_2$ buffer layer of a NO stacked dielectric. The threshold voltage shift of a device, however, was drastically increased because of its thin $SiO_2$ buffer layer which highlighted bias and light-induced hole trapping into the $Si_3N_4$ layer. As a results, the pseudo-MOS transistor with a 20-nm-thick $SiO_2$ buffer layer exhibited improved electrical characteristics and device reliability; field effective mobility(${\mu}_{FE}$) of 12.3 $cm^2/V{\cdot}s$, subthreshold slope (SS) of 148 mV/dec, trap density ($N_t$) of $4.52{\times}1011\;cm^{-2}$, negative bias illumination stress (NBIS) ${\Delta}V_{th}$ of 1.23 V, and negative bias temperature illumination stress (NBTIS) ${\Delta}V_{th}$ of 2.06 V.

Isotope-Aided Micronutrient Studies in Rice Production with Special Reference to Zinc Deficiency (II) -Residual Effect of $^{65}Zn$ Labelled Fertilizers-

  • Kim, Tai-Soon;Kim, Jae-Sung;Kim, Jin-Se
    • Nuclear Engineering and Technology
    • /
    • v.11 no.1
    • /
    • pp.47-54
    • /
    • 1979
  • A field experiment has been carried out to evaluate the residual effect of zinc fertilizers by rice plant grown under flooded conditions in the field. The results obtained are summarized as fellows ; Residual effect of zinc fertilizers on yields of rough and hulled grains showed slight increases. Effect of zinc application methods on yields of the grains were shown that zinc mixed treatment could be more effectively utilized than treatment of zinc on the soil surface. In case of levels of zinc application, 5 kg zinc per hectare represented high yields of the grains than those obtained from 10kg and 20kg zinc placement per hectare respectively. Regarding the form of zinc fertilizers, the urea-zinc complex showed less effective on yields of the grains than did the zinc sulfate. This phenomenon was consistent with the previous result. Yields of total zinc in rice plant grown on the rice straw added soils (Treatment No. 2 and 8) and the urea-zinc complex treated soil were increased markedly as compared to those data obtained from the previous year. The percentage of zinc derived from fertilizer decreased largely as compared to that of the first year crop. The yield of fertilizer zinc in rice plant decreased slightly in the most zinc treatments but in the case of treatments of zinc mixed with the straw added soil and the urea-zinc complex increased reversely as compared to the previous results. The mixed application of zinc with soil showed higher yield of fertilizer zinc than the soil surface placement. Approximately from 4.6 to 24.3 per cent of zinc taken up by rice plants were derived from the fertilizer zinc. Zinc fertilizer use efficiency ranged from 0.213 to 0.584 per cent when 5 kg zinc per hectare applied.

  • PDF

$Cu_2ZnSnS_4$ Thin Film Absorber Synthesized by Chemical Bath Deposition for Solar Cell Applications

  • Arepalli, Vinaya Kumar;Kumar, Challa Kiran;Park, Nam-Kyu;Nang, Lam Van;Kim, Eui-Tae
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2011.10a
    • /
    • pp.35.1-35.1
    • /
    • 2011
  • New photovoltaic (PV) materials and manufacturing approaches are needed for meeting the demand for lower-cost solar cells. The prototypal thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4~1.6 ev and a large absorption coefficient of ${\sim}10^4\;cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative method for large area deposition of CZTS thin films that is potentially high throughput and inexpensive when used to produce monolithically integrated solar panel modules. Specifically, we have developed an aqueous chemical approach based on chemical bath deposition (CBD) with a subsequent sulfurization heat treatment. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and good optical properties. A preliminary solar cell device was fabricated to demonstrate rectifying and photovoltaic behavior.

  • PDF

Spectra Responsibility of Quantum Dot Doped Organic Liquid Scintillation Dosimeter for Radiation Therapy

  • Kim, Sung-woo;Cho, Byungchul;Cho, Sangeun;Im, Hyunsik;Hwang, Ui-jung;Lim, Young Kyoung;Cha, SeungNam;Jeong, Chiyoung;Song, Si Yeol;Lee, Sang-wook;Kwak, Jungwon
    • Progress in Medical Physics
    • /
    • v.28 no.4
    • /
    • pp.226-231
    • /
    • 2017
  • The aim is to investigate the spectra responsibilities of QD (Quantum Dot) for the innovation of new dosimetry application for therapeutic Megavoltage X-ray range. The unique electrical and optical properties of QD are expected to make it a good sensing material for dosimeter. This study shows the spectra responsibility of toluene based ZnCd QD and PPO (2.5-diphenyloxazol) mixed liquid scintillator. The QDs of 4 sizes corresponding to an emission wavelength (ZnCdSe/ZnS:$440{\pm}5nm$, ZnCdSeS:470, 500, $570{\pm}5nm$) were utilized. A liquid scintillator for control sample was made of toluene, PPO. The Composition of QD loaded scintillators are about 99 wt% Toluene as solvent, 1 wt% of PPO as primary scintillator and 0.05, 0.1, 0.2 and 0.4 wt% of QDs as solute. For the spectra responsibility of QD scintillation, they were irradiated for 30 second with 6 MV beam from a LINAC ($Infinity^{TM}$, Elekta). With the guidance of 1.0 mm core diameter optical fiber, scintillation spectrums were measured by a compact CCD spectrometer which could measure 200~1,000 nm wavelength range (CCS200, Thorlabs). We measured the spectra responsibilities of QD loaded organic liquid scintillators in two scintillation mechanisms. First was the direct transfer and second was using wave shifter. The emission peaks from the direct transfer were measured to be much smaller luminescent intensity than based on the wavelength shift from the PPO to QDs. The emission peak was shifted from PPO emission wavelength 380 nm to each emission wavelength of loaded QD. In both mechanisms, 500 nm QD loaded samples were observed to radiate in the highest luminescence intensity. We observed the spectra responsibility of QD doped toluene based liquid scintillator in order to innovate QD dosimetry applicator. The liquid scintillator loading 0.2 wt% of 500 nm emission wavelength QD has most superior responsibility at 6 MV photon beam. In this study we observed the spectra responsibilities for therapeutic X-ray range. It would be the first step of innovating new radiation dosimetric methods for radiation treatment.

Study on the Improvement of Nitrate Removal Efficiency in Multi-Step Electro-chemical Process (전기화학적공정에서 질산성질소 제거효율 향상에 관한 연구)

  • Sim, Joo-Hyun;Kang, Se-Han;Seo, Hyung-Joon
    • Journal of Korean Society of Environmental Engineers
    • /
    • v.30 no.2
    • /
    • pp.155-160
    • /
    • 2008
  • In this study, the nitrate removal efficiency was examined under a variety of operating conditions, such as different doses of the reducing agent, different electrode types, different HRTs(hydraulic retention times), and different current densities, using the multistep electrochemical process. The nitrate removal efficiency increased and the input energy decreased when the reducing agent was used, and almost no difference was found between the electrode types in terms of their nitrate removal efficiency and current efficiency. So that the Zn reducing agent could be recovered, though, the B-type electrode was chosen(step 1: Pt-Zn; step 2: Pt-Zn; step 3: Pt-Zn; step 4: Pt-Zn). HRT experiments were carried out on constant electric current density unrelated HRTs and various electric current density related HRTs: the constant amount of electric current per unit volume. As a result, HRT and the electric current density caused concentration polarization and the lack of an applied current. That is to say,the lower the HRT, the greater the decrease in concentration polarization and in the amount of applied current per unit volume. Therefore, optimal conditions were found through the experiments that were conducted on HRT and electric current density. When a spacer was installed in the process, the nitrate removal efficiency and energy efficiency increased even more because the diffusion likewise increased.

$ZnO_{1-x}S_x$ 버퍼층 건식 성장 시 스퍼터링 파워 변화에 따른 CIGS 태양전지 특성

  • Wi, Jae-Hyeong;Jo, Dae-Hyeong;Kim, Ju-Hui;Park, Su-Jeong;Jeong, Jung-Hui;Han, Won-Seok;Jeong, Yong-Deok
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.02a
    • /
    • pp.684-685
    • /
    • 2013
  • p-형 반도체인 Cu(In,Ga)$Se_2$ (CIGS) 광 흡수 층은 이보다 에너지 밴드 간격이 큰 n-형 반도체와 이종 접합을 형성한다. 흡수층과 윈도우층 사이의 결정구조 차이와 밴드갭 에너지 차이를 완화시키기 위해 버퍼층이 필요하다. 버퍼층을 형성하는 물질로 화학적 용액 성장법(Chemical Bath deposition)을 사용한 CdS가 많이 적용되어 왔으나 Cd의 유해성 및 습식 공정으로 인한 연속공정에 대한 어려움이 있다. 따라서 버퍼층을 Cd을 포함하지 않는 ZnS, $In_2S_3$, (Zn, Mg)O 등과 같은 물질로 대체하여 원자층 증착법(Atomic Layer Deposition), 펄스레이져증착법(Pulsed Laser Deposition), 스퍼터링(sputtering) 등과 같은 건식으로 성장시키는 연구가 활발히 진행되고 있다. 본 연구에서는 $ZnO_{1-x}S_x$ ($0.2{\leq}x{\leq}0.4$)를 반응성 스퍼터링으로 증착하여 큰 밴드갭 에너지와 높은 광투과율를 갖는 버퍼층을 제작하였다. CIGS 박막의 손상을 줄여주기 위하여 RF 파워는 240, 200, 150, 100 W로 변화시켰다. CIGS 태양전지의 I-V 측정 결과, RF 파워가 150 W일 때 10.7%의 가장 높은 변환 효율을 보였고, 150 W 이상에서는 파워가 증가할 때 단락전류는 감소하였으며 개방전압은 다소 증가하였다. 반면 100 W에서 단락전류는 다소 증가하는 것에 반해 개방 전압이 급격히 낮아졌다. 이것은 파워에 따라 결합되는 산소의 양이 다르기 때문으로 생각된다.

  • PDF