• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.197.2-197.2
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• 2015

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, the ZnTe:O/CdS/ZnO structure was fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 4.5 J/cm2. The base pressure of the chamber was kept at a pressure of approximately $4{\times}10-7Torr$. ZnO thin film with thickness of 100 nm was grown on to ITO/glass, and then CdS and ZnTe:O thin film were grown on ZnO thin film. Thickness of CdS and ZnTe:O were 50 nm and 500 nm, respectively. During deposition of ZnTe:O films, O2 gas was introduced from 1 to 20 mTorr. For fabricating ZnTe:O/CdS/ZnO solar cells, Au metal was deposited on the ITO film and ZnTe:O by thermal evaporation method. From the fabricated ZnTe:O/CdS/ZnO solar cell, current-voltage characteristics was measured by using HP 4156-a semiconductor parameter analyzer. Finally, solar cell performance was measured using an Air Mass 1.5 Global (AM 1.5 G) solar simulator with an irradiation intensity of 100 mW cm-2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.380-380
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• 2010

The chalcopyrite $ZnIn_2S_4$ epilayers were grown on the GaAs substrate by using a hot-wall epitaxy (HWE) method. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2S_4$ have been estimated to be 0.1541 eV and 0.0129 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the $\Gamma_5$ states of the valence band of the $ZnIn_2S_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$, and $C_1$-exciton peaks for n = 1. Also, we obtained the $A_{\infty^-}$ and B-exciton peaks from the PC spectrum at 293 K.

• Journal of the Korean institute of surface engineering
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• v.35 no.1
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• pp.39-46
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• 2002

$Cu_2$$ZnSnS_4$(CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. Thin films were deposited on ITO glass substrates using a compact target which were made by $Cu_2$S, ZnS, SnS$_2$ powder at room temperature by rf magnetron sputtering and were annealed in the atmosphere of Ar and $S_2$(g). We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2$$ZnSnS_4$ composition. Structure was coarsened with increasing temperature and (112), (200), (220), (312) planes appeared to conform to all the reflection Kesterite structure. A (112) preferred orientation was advanced with increasing the annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.51 to 1.8eV as the annealing temperature increased. The optical absorption coefficient of the thin film was about $10^4$$cm^{-1}$.

• Journal of the Korean Electrochemical Society
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• v.10 no.4
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• pp.262-264
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• 2007

This paper describes a two-step approach for the electrochemical deposition of CdZnS thin films on the polycrystalline Au electrode. Initially, an Au substrate is electrochemically modified with a sulfur layer. In the second step, the layer is electroreduced to $S^{2-}$ in the electrolyte dosed with the requisite amount of $Cd^{2+}$ and $Zn^{2+}$ ions to generate CdZnS films in situ. This approach was validated using a combination of linear sweep voltammetry and electrochemical quartz crystal microgravimetry. Thus synthesized CdZnS thin films have different composition depending on the composition of electrolytes. CdZnS thin films are characterized by energy-dispersive X-ray analysis and Raman spectroscopy.

• Journal of the Korean Magnetics Society
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• v.6 no.2
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• pp.73-79
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• 1996

Y-type hexagonal ferrites$(Ba_{2}Me_{2}Fe_{12}O_{22}:Me=transition metal)$ have promising electromagnetic properties in GHz range. Co and Zn are good candidates for the transition metal. To understand their role on the properties, it is thus necessary to study the ion(s) distribution in that complex Y-type hexagonal ferrite structure. The authors report Mossbauer spectroscopic results from very reliable samples, which has been extensively characterized by chemical analysis, Rietveld analysis of X-ray diffraction patterns, and magnetic property measurements. Analyzing two samples, $Co_{2}Y$ and $Co_{1.6}Zn_{0.4}Y$, conclusions are made as follow: (1) Co ions prefer the tetrahedral interstitial sites in the S-block $(6c_{IV})$ and the octahedral sites $(18h_{VI})$ at the interface of S- and T-block. (2) Partial substitution of Co with Zn (within the experimental range) does not disturb the Fe distribution.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.156-156
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• 2003

수평 전기로에서 ZnIn$_2$S$_4$ 다결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 2nIn2S4단결정 박막을 반절연성 GaAs(100)기판 위에 성장시켰다. ZnIn2S4 단결정 박막은 증발원의 온도를 610 $^{\circ}C$, 기판의 온도를 450 $^{\circ}C$로 성장시켰고 성장 속도는 0.5 $\mu\textrm{m}$/hr로 확인되었다. ZrIn2S4 단결정 박막의 결정성의 조사에서 10 K에서 광발광(photoluminescence) 스펙트럼이 433 nm (2.8633eV)에서 exciton emission스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 133 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Pauw방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 8.51$\times$$10^{17}$ electron/$cm^{-3}$ 291 $\textrm{cm}^2$/v-s였다. ZnIn2S4 단결정 박막의 광전류 단파장대 봉우리들로부터 10 K에서 측정된 $\Delta$Cr(crystal field splitting)은 0.1678 eV, $\Delta$So(spin orbit coupling)는 0.0148 eV였다. 10 K의 광발광 측정으로부터 고품질의 결정에서 볼 수 있는 free exciton 과 매우 강한 세기의 중성 주개 bound exciton등의 피크가 관찰되었다. 이때 중성 주개 bound exciton의 반치폭과 결합 에너지는 각각 9 meV와 26 meV 였다. 또한 Haynes rule에 의해 구한 불순물의 활성화 에너지는 130 meV 였다.다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.151-155
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• 2014

We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

• Bulletin of the Korean Chemical Society
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• v.31 no.7
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• pp.1997-2002
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• 2010

ZnSe and ZnS:Mn nanocrystals were synthesized via the thermal decomposition of their corresponding organometallic precursors in a hot coordinating solvent (TOP/TOPO) mixture. The organic surface capping agents were substituted with EDTA molecules to impart hydrophilic surface properties to the resulting nanocrystals. The optical properties of the water-dispersible nanocrystals were analyzed by UV-visible and room temperature solution photoluminescence (PL) spectroscopy. The powders were characterized by X-ray diffraction (XRD), high resolution transmission electron microscopy (HR-TEM), and confocal laser scanning microscopy (CLSM). The solution PL spectra revealed emission peaks at 390 (ZnSe-EDTA) and 597 (ZnS:Mn-EDTA) nm with PL efficiencies of 4.0 (former) and 2.4% (latter), respectively. Two-photon spectra were obtained by fixing the excitation light source wavelengths at 616 nm (ZnSe-EDTA) and 560 nm (ZnS:Mn-EDTA). The emission peaks appeared at the same positions to that of the PL spectra but with lower peak intensity. In addition, the morphology and sizes of the nanocrystals were estimated from the corresponding HR-TEM images. The measured average particle sizes were 5.4 nm (ZnSe-EDTA) with a standard deviation of 1.2 nm, and 4.7 nm (ZnS:Mn-EDTA) with a standard deviation of 0.8 nm, respectively.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.39-42
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• 2008

[ $AB_2X_4$ ](A, B=Transition Metal, X=O, S, Se) are cubic spinel normal ferrimagnets, in which M ions occupy the tetrahedral sites and Cr ions occupy the octahedral sites. Recently, they have been investigated for behaviour of B site ions and A-B interaction. Polycrystalline $[Co_{0.9}Zn_{0.1}]_A[Cr_{1.98}{^{57}Fe_{0.02}}]_BO_4$ compound was prepared by wet-chemical process. The ferrimagnetic transition was observed around 90K. $M\"{o}ssbauer$ absorption spectra at 4.2K show that the well-developed two sextets are superposed with small difference in hyperfine fields($H_{hf}$). The hyperfine fields of $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$ and $Co_{0.9}Zn_{0.1}Cr_{1.98}{^{57}Fe_{0.02}}O_4$ were determined to be 488, 478 kOe and 486, 468 kOe, respectively. We notice that the one of the magnetic hyperfine field values changes with Zn ion substitution. These results suggest the incommensurate states and spin-reorientation temperature($T_S=18K$) changes with Zn ions substitution below spin-reorientation temperature($T_S=28K$) of $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.471-471
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• 2013

Highly stable and high performance amorphous oxide semiconductor thin film transistors (TFTs) were fabricated using 4-mercaptophenol (4MP) doped ZnO by atomic layer deposition (ALD). The 4 MP concentration in ZnO films were varied from 1.7% to 5.6% by controlling Zn: 4MP pulses. The carrier concentrations in ZnO thin films were controlled from $1.017{\times}10^{20}$/$cm^3$ to $2,903{\times}10^{14}$/$cm^3$ with appropriate amount of 4MP doping. The 4.8% 4MP doped ZnO TFT revealed good device mobility performance of $8.4cm^2V-1s-1$ and on/off current ratio of $10^6$. Such 4MP doped ZnO TFTs were stable under ambient conditions for 12 months without any apparent degradation in their electrical properties. Our result suggests that 4 MP doping can be useful technique to produce more reliable oxide semiconductor TFT.