• 청정기술
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• 제29권1호
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• pp.46-52
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• 2023

옥살산(oxalic acid)은 기존에 질산을 사용한 carbohydrates의 산화 공정에 의해 얻어질 수 있으며 여러 분야에서 사용되고 있다. 하지만 이 반응은 다양한 질소 산화물을 형성하고 많은 증간 생산물의 분리를 필요로 하기에 복잡하고 환경에 유해하다. 한편, 이산화탄소로부터 전기화학적 방법에 의해 옥살산을 높은 효율로 얻을 수 있는 방법이 제안되었다. 아연 전극 산화에 의해 생성된 Zn²⁺이온과 CO₂ 환원에 의한 oxalate이온의 반응으로 zinc oxalate(ZnC₂O₄)가 얻어진다. 이후 산처리에 의해 옥살산이 생성될 수 있으나 강산과 열을 필요로 한다. 본 연구에서는 CO₂의 전기화학적 전환으로 형성된 ZnC₂O₄을 강산을 사용하지 않고, 간단하고 분리가 쉬운 방법을 적용하여 옥살산으로 전환하고자 한다. 또한, 고부가 물질인 글리콜산으로 더 전환시킴으로써 이산화탄소에서 고부가 물질로의 전환 가치를 높이고자 하였다. ZnC₂O₄를 상온, 상압에서 화학적 방법 및 여과 과정을 통해 효과적으로 Zn(OH)₂ 입자와 oxalate 용액으로 분리하였으며 얻어진 Zn(OH)₂와 oxalate는 전기화학적 방법을 사용하여 각각 Zn, 글리콜산으로 전환되었다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.270-273
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• 2007

In this report, Indium-free and Indium-reduced thin film materials for solar absorber were studied in order to search alternative materials for thin film solar cell. The films of $Cu_2ZnSnSe_4$ and $Cu_2ZnSnSe_2$ were deposited using mixed binary chalcogenides powders. From the film bulk analysis result, it is observed that Cu concentration is a function of substrate temperature as well as CuSe mole ratio in the target. Under optimized conditions, $Cu_2ZnSnSe_4$ and $Cu_2ZnSnSe_2$ thin films grow with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of $10^4$ $cm^{-1}$. $Cu_2ZnSnSe_4$ film shows a 1.5 eV band gap. On the other side, an increasing of optical band gap from 1.0 eV to 1.25 eV ($CuInSnSe_2$) is found to be proportional with an increasing of Zn concentration. All films have a p-type semiconductor characteristic with a carrier concentration in the order of $10^{14}$ $cm^{-3}$, a mobility about $10^1$ $cm^{2{\cdot}-1.}S^{-1}$ and a resistivity at the range of $10^2-10^6$ ${\Omega}{\cdot}m$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.688-688
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• 2013

Al-doped ZnO (AZO) thin films have attracted a lot of attention as a cheap transparent conducting oxide (TCO) material that can replace the expensive Sn-doped In2O3. In particular, AZO thin films are widely used as a window layer of chalcogenide-based thin film solar cells such as Cu(In,Ga)Se2 and Cu2ZnSnS4 (CZTS). Mostly important requirements for the window layer material of the thin film solar cells are the high transparency and the low sheet resistance, because they influence the light absorption by the activelayer and the electron collection from the active layer, respectively. In this study, we prepared the AZO thin films by RF magnetron sputtering using a ZnO/Al2O3 (98：2wt%) ceramic target, and the effect of the sputtering condition such as the working pressure, RF power, and the working distance on the optical, electrical, and crystallographic properties of the AZO thin films was investigated. The AZO thin films with optimized properties were used as a window layer of CZTS thin film solar cells. The CZTS active layers were prepared by the electrochemical deposition and the subsequent sulfurization process, which is also one of the cost-effective synthetic approaches. In addition, the solar cell properties of the CZTS thin film solar cells, such as the photocurrent density-voltage (J-V) characteristics and the external quantum efficiency (EQE) were investigated.

• 공업화학
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• 제17권3호
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• pp.274-279
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• 2006

해중합 촉매인 zinc acetate ($C_{4}H_{6}O_{4}Zn{\cdot}2H_{2}O{\cdot}0.2\;mol$)와 lithuium hydroxide $H_{2}O$ ($LiOH{\cdot}H_{2}O{\cdot}0.14\;mol$)를 용매인 ethyl alcohol (99.9%)에 용해시킨 후 분산제인 hydroxypropyl cellulose (HPC)를 첨가하여 균일하게 분산된 ZnO (산화아연) 콜로이드 용액을 졸-겔법을 이용하여 합성하였다. ZnO 입자들의 크기와 모양은 분산제인 HPC에 의해 결정되었다. 또한 나노 크기의 ZnO 입자들은 zinc-2-ethylhexagonate를 기초로 한 침천법을 이용하여 얻었다. 이렇게 얻어진 ZnO 분말을 DLS, XRD, FE-SEM, 그리고 UV-Vis를 통하여 특성 분석을 하였다. 그 결과, 산화아연 분말은 자기조립 반응으로 균일하고 육방정계 모양의 구조를 가지는 것을 볼 수 있었다. 또 평균 입자 크기는 거의 40 nm이고 균일하게 분산되었다.

• 대한화학회지
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• 제45권2호
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• pp.131-137
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• 2001

황을 포함하는 포단드 리간드인 tri(phenylthio-2-ethy1) amine (Podand $N_1S_3$)과 tetra(phenylthio-2-ethyl)ethylenediamine (Podand $N_2S_4$) 그리고 tris(1-benzylaminoethyl)amine (Podand $N_4$)의 합성을 확인하였다. 또한 이들의 양성자 첨가 반응에 의한 평형상수(protonation constant) 와 Zn(II), Cd(II), Pb(II), Hg(II) 이온과의 착물형성에 따르는 안정도 상수를, 양성자를 첨가한 95% MeOH 용액에서 전위차 적정법을 사용하여 여러 가지 온도에서 측정하였다. 리간드에 대한 양성자 첨가 반응의 평형 상수는 Podand $N_2S_4$가 가장 크게 나타났다. 양성자 첨가 반응에 따른 평형 상수 뿐만 아니라, Zn(II), Cd(II), Pb(II), Hg(II) 이온과의 착물 형성에 따르는 안정도 상수의 크기, 엔타피, 엔트로피의 값 역시 Podand $N_1S_3$< Podand $N_2S_4$$N_4$ 순으로 증가함을 보였다.

• Current Photovoltaic Research
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• 제3권3호
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• pp.75-79
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• 2015

Recently, $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) has been received a tremendous attraction as light absorber material in thin film solar cells (TFSCs), because of its earth abundance, inexpensive and non-toxic constituents and versatile material characteristics. Kesterite CZTSSe thin films were synthesized by sulfo-selenization of sputtered Cu/Sn/Zn stacked metallic precursors. The sulfo-selenization of Cu/Sn/Zn stacked metallic precursor thin films has been carried out in a graphite box using rapid thermal annealing (RTA) technique. Annealing process was done under sulfur and selenium vapor pressure using Ar gas at $520^{\circ}C$ for 10 min. The effect of tuning Se/(S+Se) precursor composition ratio on the properties of CZTSSe films has been investigated. The XRD, Raman, FE-SEM and XRF results indicate that the properties of sulfo-selenized CZTSSe thin films strongly depends on the Se/(S+Se) composition ratio. In particular, the CZTSSe TFSCs with Se/(S+Se) = 0.37 exhibits the best power conversion efficiency of 4.83% with $V_{oc}$ of 467 mV, $J_{sc}$ of $18.962mA/cm^2$ and FF of 54%. The systematic changes observed with increasing Se/(S+Se) ratio have been discussed in detail.

• 한국결정성장학회지
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• 제1권1호
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• pp.59-70
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• 1991

출발용액으로 $ZnCl_2$와 Hexamethylenetetramine 용액을 사용한 Batch process를 이용하여 ZnO 미분말을 합성 하였다. 합성된 입자의 형태는 $ZnCl_2$용액의 농도가 $0.1mol/\ell$와 $0.05mol/\ell$에서 봉형이 얻어졌고 $0.01mol/\ell$판형의 분말이 얻어졌다. Hexamethylenetetramine은 늦은 속도로 가해, $ZnCl_2$의 농도가 0.05mol/l일 때 핵 생성제로 $NH_4$OH를 첨가하였다. 이때, 얻어진 분말의 평균 입자크기는 약 $0.4\mu\textrm{m}$였고 형태는 구형이었다. $500^{\circ}C$에서 1시간 하소한 후, 입자에 일부 존재하던 유기물은 모두 제거되었다. 이때, 입자의 전체적인 형태에 있어서는 큰 변화가 없었으나 크기는 약간의 감소가 일어났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with repsect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, $ZnWO_4$ was turned out the suitable LTCC material. $ZnWO_4$ can be sintered up to 98% of full density at $1050^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, $B_{2}O_{3}$ and $V_{2}O_{5}$ were added to $ZnWO_4$. 40 mol% $B_{2}O_{3}$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to $-7.6ppm/^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of $V_{2}O_{5}$ in $ZnWO_{4}-B_{2}O_{3}$ system enhanced liquid phase sintering. 0.1 wt% $V_{2}O_{5}$ addition to the $0.6ZnWO_{4}-0.4B_{2}O_{3}$ system, reduced the sintering temperature down to $950^{\circ}C$. Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and $-21.6ppm/^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, ZnWO$_4$ was turned out the suitable LTCC material. ZnWO$_4$ can be sintered up to 98% of full density at 105$0^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and -70ppm/$^{\circ}C$, respectively In order to modify the dielectric properties and densification temperature, B$_2$O$_3$ and V$_2$O$_{5}$ were added to ZnWO$_4$. 40 mol% B$_2$O$_3$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to -7.6ppm/$^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of V$_2$O$_{5}$ in ZnWO$_4$-B$_2$O$_3$ system enhanced liquid phase sintering. 0.lwt% V$_2$O$_{5}$ addition to the 0.6ZnWO$_4$-0.4B$_2$O$_3$ system, reduced the sintering temperature down to 95$0^{\circ}C$ Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and -21.6ppm/$^{\circ}C$ respectively.ively.

• 마이크로전자및패키징학회지
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• 제9권4호
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• pp.47-53
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• 2002

본 연구에서는 습식법으로 합성된 초미세분말을 원료로 사용하여 제조된 (NiCuZn)-ferrite와 시약급원료를 사용하여 제조된 (NiCuZn)-ferrite의 저온소결 특성 및 전자기적 특성을 고찰하고, 상호 비교 분석하였다. 조성은$(Ni_{0.4-x}Cu_xZn_{0.6})_{1+w}(Fe_2O_4)_{1-w}$에서 x의 값을 0.2, w의 값은 0.03으로 고정하였고, 소결은 습식법으로 합성된 분말의 경우, 초기열처리과정을 거쳐 최종적으로 $900^{\circ}C$에서, 건식법의 경우 $1150^{\circ}C$의 온도에서 진행하였다. 그 결과, 습식법으로 제조된 (NiCuZn)-ferrite는 건식법으로 제조된 (NiCuZn)-ferrite보다 $200^{\circ}C$이상 낮은 소결온도에서 높은 소결밀도 값을 가졌으며, 품질계수 등 칩인덕터에서 중요한 요소인 전자기적 특성이 우수하게 나타났다. 또한, 습식법으로 합성된 페라이트는 분말의 초기열처리온도에 따라 최종소결 특성이 크게 변하였다. 그 밖에 습식법과 건식법으로 합성한(NiCuZn)-ferrite의 결정성, 미세구조들을 XRD, SEM, TEM을 이용하여 비교 고찰하였다.