• Bulletin of the Korean Chemical Society
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• v.26 no.4
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• pp.579-584
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• 2005

The 3-[(2-furylmethylene)amino]-2-thioxo-1,3-thiazolidin-4-one (FTT) was used as an excellent ionophore in construction of a $Zn^{2+}$ PVC-based membrane sensor. The best performance was obtained with a membrane composition of 30% poly(vinyl chloride), 62% nitrobenzen (NB), 3% FTT and 5% sodium tetraphenyl borate (TBP). This membrane sensor shows very good selectivity and sensitivity towards $Zn^{2+}$ over a wide variety of cations, including alkali, alkaline earth, transition and heavy metal ions. The membrane sensor revealed a great enhancement in selectivity coefficients for $Zn^{2+}$ ions, in comparison to the previously reported $Zn^{2+}$ membrane sensors. Theoretical studies also showed the selective interaction of TFF and $Zn^{2+}$ ions. The proposed membrane sensor exhibits a Nernstian behavior (with slope of 29.3 ${\pm}$ 0.3 mV per decade) over a wide concentration range (1.0 ${\times}$ $10^{-6}$-1.0 ${\times}$ $10^{-2}$) with a detection limit of 8.5 ${\times}$ $10^{-7}$ M (52 ng mL$^{-1}$). It shows relatively fast response time, in the whole concentration range ($\lt$ 20 s), and can be used for at least 10 weeks in a pH range of 3.0-7.0. The proposed membrane sensor was successfully used in direct determination of $Zn^{2+}$ ions in wastewater of industrial zinc electroplating companies, and also as an indicator electrode in titration with EDTA.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.305-309
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• 2012

In this study, ZnO nanorods and $SnO_2$-CuO heterogeneous oxide were grown on membrane-type gas sensor platforms and the sensing characteristics for carbon monoxide (CO) were studied. Diaphragm-type gas sensor platforms with built-in Pt micro-heaters were made using a conventional bulk micromachining method. ZnO nanorods were grown from ZnO seed layers using the hydrothermal method, and the average diameter and length of the nanorods were adjusted by changing the concentration of the precursor. Thereafter, $SnO_2$-CuO heterogeneous oxide thin films were grown from evaporated Sn and Cu thin films. The average diameters of the ZnO nanorods obtained by changing the concentration of the precursor were between 30 and 200 nm and the ZnO nanorods showed a sensitivity value of 21% at a working temperature of $350^{\circ}C$ and a carbon monoxide concentration of 100 ppm. The $SnO_2$-CuO heterogeneous oxide thin films showed a sensitivity value of 18% at a working temperature of $200^{\circ}C$ and a carbon monoxide concentration of 100 ppm.

• Analytical Science and Technology
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• v.11 no.4
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• pp.305-310
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• 1998

A reactive dye synthesized with an amine containing Eriochrome Black T derivative and cynauric chloride was immobilized on a cellulose membrane to construct an optical sensor for the detection of divalent transition metal ions in aqueous solution. The response of this reactive dye-based optical sensor was as sensitive as that of Eriochrome Black T in solution phase. Its typical detection limits for $Zn^{2+}$ and $Co^{2+}$ were $6.3{\times}10^{-5}mol/l$ and $2.5{\times}10^{-4}mol/l$, respectively. No loss in the sensitivity of reactive dye-based sensor was observed even the pH of flowing solutions continually varied for an extended period of time.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Journal of the Korean Chemical Society
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• v.46 no.5
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• pp.407-411
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• 2002

A method to determine lead ion in aqueous media using an optical sensor loaded on a fluorescent optode membrane incoporating a metal ion-selective ionophore, a proton-selective chromoionophore and lipophilic anionic sites has been studied. The effects of pH and thickness of membrane on the fluorescence intensity were investigated. The effects of foreign ions such as $Na^+$, $K^+$, $Mn^{2+}$ and $Zn^{2+}$ on the determination of lead ion were also studied. The linear range in the calibration curve for the determination of lead ion was found to be 5.0${\times}10^-7$ to 5.0${\times}$$10^-3$M and the correlation coefficient in this range was -0.99107 under the optimal experimental conditions. The relative standard deviation of the blank signals was 3.0% and the detection limit of lead ion was 5.0${\times}$$10^-9$M.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.705-711
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• 2000

A thin film oxide semiconductor micro gas sensor array which shows only 60 mW of power consumption at an operating temperature of $300^{\circ}C$ has been fabricated using microfabrication and micromachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double-layer structure of $0.1\mum\; thick\; Si_3N_4 \;and\; 1 \mum$ thick phosphosilicate glass (PSG) prepared by low-pressure chemical-vapor deposition (LPCVD) and atmospheric-pressure chemical-vapor deposition (APCVD), respectively. The sensor array consists of such thin film oxide semiconductor sensing materials as 1 wt.% Pd-doped $SnO_2,\; 6 wt.% A1_2O_3-doped\; ZnO,\; WO_3$/ and ZnO. Baseline resistances of the four sensing materials were found to be stable after the aging for three days at $300^{\circ}C$. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.