• 제목/요약/키워드: $Zn^{2+}$

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프랙탈을 이용한 ZnO 바리스터 표면 구조 및 전기적 특성 (The Structure and Electrical Characteristics of ZnO Varistors Surface using-Fractal)

  • 오수홍;홍경진;이진;이준웅;김태성
    • 한국전기전자재료학회논문지
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    • 제13권10호
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    • pp.834-839
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    • 2000
  • The structural properties that SEM photograph of ZnO varistors surface studied by fractal mathematics program were investigated to verify the relations of electrical characteristics. The SEM photograph of ZnO varistors surface were changed by binary code and the grain shape of that were analyzed by fractal dimension. The void of ZnO varistors surface was found by fractal program. The relation between grain density and electrical properties depend on fractal dimension. The grain size in ZnO varistors surface was decreased by increasing of Sb$_2$O$_3$ addition. The spinel structure was formed by Sb$_2$O$_3$addition and it was depressed the ZnO grain formation. The grain size of ZnO by Sb$_2$O$_3$addition were from 5 to 10[${\mu}{\textrm}{m}$]. Among of ZnO varistors, fractal dimension of ZnO4 was very high as a 1.764. The density of grain boundary in ZnO2 and ZnO3 varistors surface was 15[%] by formed spinal structure. The breakdown electric field of ZnO2 that fractal dimension has 1.752 was very high to be 8.5[kV/cm]. When the fractal dimensin was high, the grain shape of ZnO varistors was complex and the serial layers of ZnO grain was increased.

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Effect of Combined Exposure to EDTA and Zinc Pyrithione on Pyrithione Absorption in Rats

  • Jung, Dong Sik;Jung, Guk Hwa;Lee, Eun Ho;Park, Hye Ran;Kim, Ju Hwan;Kim, Kyu-Bong;Kim, Hak Rim;Kim, Hyung Gun
    • Toxicological Research
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    • 제35권2호
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    • pp.155-160
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    • 2019
  • Zinc pyrithione (ZnPT) is a coordination complex of zinc and has been used widely as an anti-dandruff agent in shampoos. Many shampoos contain both ZnPT and EDTA, a chelating agent speculated to increase ZnPT absorption, thereby raising concerns about neurotoxicity. Here, we investigated the effect of EDTA on ZnPT absorption by direct comparison of ZnPT and pyrithione (PT) concentrations in shampoo formulations, and by pharmacokinetic analysis of ZnPT, PT, and 2-methanesulfonylpyridine (MSP), the main ZnPT metabolite, in rat plasma or urine following exposure to shampoo containing ZnPT alone or a combination of ZnPT and EDTA. Approximately 17.3% of ZnPT was converted to PT by the addition of EDTA in the shampoo formulation. Plasma ZnPT and PT concentrations were not measured up to 24 hr after treatment with shampoo containing 1% ZnPT or 1% ZnPT + 2% EDTA in all rats. However, PT amount in 24-hr urine sample, MSP concentration in plasma, and MSP amount in 24-hr urine sample were approximately 4-, 2.6-, and 2.7-fold higher, respectively, in the 1% ZnPT + 2% EDTA shampoo group than in the 1% ZnPT shampoo group. As confirmed by the formulation analysis and in vivo pharmacokinetic analysis, the exposure of ZnPT could be increased by the absorption of PT due to partial dissociation of ZnPT into PT.

Study on Indium-free and Indium-reduced thin film Solar absorber materials for photovoltaic application

  • Kim, Kyoo-Ho;Wibowo, Rachmat Adhi
    • 신재생에너지
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    • 제3권4호
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    • pp.54-62
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    • 2007
  • In this paper, we report the research highlight on the preparation and characterization of Indium-free $Cu_2ZnSnSe_4$ and Indium-reduced $CulnZnSe_2$ thin films in order to seek the viability of these absorber materials to be applied in thin film solar cells. The films of $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ were prepared using mixed binary chalcogenides powders. It was observed that Cu concentration was a function of substrate temperature as well as CuSe mole ratio in the target. Under an optimized condition, $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ thin films grew with strong [112]. [220/204] and [312/116] reflections. Both $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ films were found to exhibit a high absorption coefficient of $104^4cm^{-1}\;Cu_2ZnSnSe_4$ film showed a band gap of 1.5eV which closes to the optimum band gap of an ideal solar absorber for a solar cell. On the other side, an increase of optical band gap from 1.0 to 1.25eV was found to be proportional with an increase of Zn concentration in the $CulnZnSe_2$ film. All films in this study revealed a p-type semiconductor characteristic.

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스퍼터링 증착법을 이용한 ZnO/Al/ZnO 구조의 유연투명전극 연구 (Aluminum based ZnO/Al/ZnO flexible Transparent Electrodes Fabricated by Magnetron sputtering)

  • 방금혁;최두호
    • 마이크로전자및패키징학회지
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    • 제25권2호
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    • pp.31-34
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    • 2018
  • 차세대 유연 광전소자 적용을 위한 금속-산화물 샌드위치 구조인 ZnO/Al/ZnO 박막의 유연투명전극 기초연구를 수행하였다. 모든 증착은 유연성을 가지는 PET 기판 상에서 이루어졌으며, 상 하부 ZnO층의 두께가 광 투과도에 미치는 영향을 확인하기 위하여 Al 층의 두께는 모두 8 nm로 고정시킨 채 상부 ZnO 층의 두께는 5-70 nm, 하부 ZnO 층의 두께는 2.5-20 nm까지 변화를 주었다. 가시광선영역(380 nm-770 nm) 파장대를 가지는 광원의 투과도에 대하여 측정한 결과, 상부 ZnO 층의 두께가 30 nm이며 하부 ZnO 층의 경우 2.5 nm 일 때 가장 높은 투과도를 보였다. 400 nm 파장기준 투과도 62%, 면저항 $19{\Omega}/{\Box}$, 그리고 곡률반경 5 mm 조건에서의 휨 테스트 후 면저항과 투과도의 변화가 발생하지 않는 ZnO/Al/ZnO 유연투명전극 결과를 보고한다.

$Sb_2O_3$함량 변화에 따른 저전압용 ZnO Varistor의 미세구조 특성 (Microstructure Properties of Zinc Oxide Varistor with $Sb_2O_3$ Contents for Low Voltage Application)

  • 박종주;서정선
    • 한국결정학회지
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    • 제8권2호
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    • pp.149-153
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    • 1997
  • 본 연구는 ZnO-Bi2O3-Co3O4-MnCo3-Cr2O3-Sb2O3를 기본 조성으로 하여 Sb2O3 첨가량(0-0.09mol%) 변화에 따른 grain size와 미세구조 특성을 고찰하고자 하였다. Sb2O3가 첨가되지 않은 조성은 이상 입자 성장에 의해 거대한 ZnO grain이 생성되었으며, Sb2O3를 첨가한 조성은 Zn7Sb2O12 spinel상 생성으로 입자 성장이 억제되어 이상입자 성장이 관찰되지 않았다. Sb2O3 첨가량 증가에 따라 ZnO grain size가 현격하게 감소하였으며 그 미세구조는 조밀하고 균일한 크기의 grain분포를 나타내었다.

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Hot Wall Epitaxy (HWE)법에 의한 ZnIn2Se4 단결정 후막 성장과 열처리 효과 (Growth and effect of thermal annealing for ZnIn2Se4 single crystalline thick film by hot wall epitaxy)

  • 홍명석;홍광준
    • 센서학회지
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    • 제17권6호
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    • pp.437-446
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    • 2008
  • Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

RHP에서의 $Zn_3P_2$ 박막 및 RTA법에 의한 Zn 확산의 특성 (Characterization of Zn diffusion in TnP Cy $Zn_3P_2$ thin film and rapid thermal annealing)

  • 우용득
    • 한국진공학회지
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    • 제13권3호
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    • pp.109-113
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    • 2004
  • InP에서 열처리 온도와 시간 및 활성화 온도에 따른 Zn의 확산의 특성을 electrochemical capacitance-voltage 법으로 조사하였다. InP층은 metal organic chemical vapor deposition를 이용하여 성장하였으며, 화산방법으로는 $Zn_3P_2$ 확산과 박막과 rapid thermal annealing를 사용하였다. 최대의 정공 농도를 갖는 p-lnP 층은 $550^{\circ}C$에서 5분 동안 확산과 활성화를 한 시료에서 얻었고, Zn의 농도는 $1\times10^{19}\textrm{cm}^{-3}$이었다. $550^{\circ}C$에서 5-20 분 동안 확산을 수행한 결과 정공농도의 확산 깊이는 1.51 $\mu\textrm{m}$에서 3.23 $\mu\textrm{m}$로 이동하였고, Zn의 확산계수는 $5.4\times10^{-11}\textrm{cm}^2$/sec이었다. 활성화 시간의 증가로, Zn가 더 깊게 확산하지만, 정공농도는 거의 변화가 없었다. 이는 도핑된 영역의 과잉의 침입형 Zn가 도핑되지 않은 영역으로 빠르게 확산하고 치환형 Zn로 변한다는 것을 의미한다. 정공농도는 $SiO_2$ 박막의 두께가 1,000$\AA$ 이상이어야 안정적으로 분포된다.

(Zn1-xMgx)2SiO4:mn 형광체의 제조와 발광특성 (Preparation and Luminescent Properties of (Zn1-xMgx)2SiO4:mn Phosphors)

  • 이지영;유일
    • 한국전기전자재료학회논문지
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    • 제22권5호
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    • pp.415-418
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    • 2009
  • $Zn_{2}SiO_{4}$:Mn green phosphors doped with Mg for PDP were synthesized by solid state reaction method. $Zn_{2}SiO_{4}$:Mn, Mg phosphors with increasing Mg concentration were changed from Rhombohedral to Orthorhombic structure. Photoluminescence intensity of $Zn_{2}SiO_{4}$:Mn phosphors doped with Mg 0.5 mol was definitely higher than that of Mg non-doped sample. The enhanced luminescence with doping Mg in the $Zn_{2}SiO_{4}$:Mn phosphors was interpreted by the increase of energy transfer from host to Mn ions with substitution Mg for Zn in the $Zn_{2}SiO_{4}$:Mn host.

$Zn_2AgGaSe_4$$Zn_2AgGaSe_4$ : $Co^{2+}$ 결정의 광학적 특성 (Optical properties of $Zn_2AgGaSe_4$ and $Zn_2AgGaSe_4$ : $Co^{2+}$ crystals)

  • 김형곤;김병철
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 추계학술대회 논문집 전문대학교육위원 P
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    • pp.10-12
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    • 1999
  • Optical properties of $Zn_2AgGaSe_4$ and $Zn_2AgGaSe_4$:$Co^{2+}$ crystals are investigated in the visible and near-infrared regions at 298K. The direct band gap at 298K is 1.630eV for the $Zn_2AgGaSe_4$ and 1.567eV for the $Zn_2AgGaSe_4$:$Co^{2+}$ crystals, respectively. In the optical absorption and PAS spectrum of the $Zn_2AgGaSe_4$:$Co^{2+}$, we observed five impurity absorption peaks at $4220cm^{-1}$, $5952cm^{-1}$, $12422cm^{-1}$, $12987cm^{-1}$ and $14184cm^{-1}$. These impurity absorption peaks are attributed to the electronic transitions between the split energy levels of $Co^{2+}$ ions with Td symmetry of $Zn_2AgGaSe_4$ host lattice. The crystal field parameter Dq, the Racah parameter B and the spin-orbit coupling parameter $\lambda$ are given by $442cm^{-1}$, $425cm^{-1}$ and $440cm^{-1}$, respectively.

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Effect of Particle Size of Zinc Oxides on Cytotoxicity and Cell Permeability in Caco-2 Cells

  • Chang, Hyun-Joo;Choi, Sung-Wook;Ko, Sang-Hoon;Chun, Hyang-Sook
    • Preventive Nutrition and Food Science
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    • 제16권2호
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    • pp.174-178
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    • 2011
  • The cell permeability and cytotoxic effects of different-sized zinc oxide (ZnO) particles were investigated using a human colorectal adenocarcinoma cell line called Caco-2. Morphological observation by scanning electron microscopy revealed that three zinc oxides with different mean particle sizes (ZnO-1, 20 nm; ZnO-2, 90~200 nm; ZnO-3, $1\sim5\;{\mu}m$) tended to aggregate, particularly in the case of ZnO-1. When cytotoxicities of all three sizes of zinc oxide particles were measured at concentration ranges of $1\sim1000\;{\mu}g$/mL, significant decreases in cell viability were observed at concentrations of $50\;{\mu}g$/mL and higher. Among the three zinc oxides, ZnO-1 showed the lowest viability at $50\;{\mu}g$/mL in Caco-2 cells, followed by ZnO-2 and ZnO-3. The permeate concentration of ZnO-1 from the apical to the basolateral side in the Caco-2 model system after four hours was about three-fold higher than that of either ZnO-2 or ZnO-3. These results demonstrated that ZnO-1, with a 20 nm mean particle size, had poorer viability and better permeability in Caco-2 cells than ZnO-2 and ZnO-3.