• 한국재료학회지
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• 제18권1호
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• pp.1-4
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• 2008

The phase transformations and luminescent properties of Eu-doped $Ca_{1-x}Sr_xAl_2O_4$ phosphors were investigated. $Ca_{1-x}Sr_xAl_2O_4:Eu^{2+}$ phosphors were synthesized by a solid-state reaction with a flux, $H_3BO_3$. A phase transformation from monoclinic $CaAl_2O_4$ to monoclinic $SrAl_2O_4$ was observed as the x values increased. A high-temperature hexagonal phase of $SrAl_2O_4$ was formed during this transformation as an intermediate phase under an $H_2$ atmosphere due to oxygen vacancies; this did not occur in an air atmosphere. Accordingly, the emission spectra shifted from a blue region to a green region as x increased.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1995년도 추계학술발표회논문집(2)
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• pp.841-846
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• 1995

대전지역 토양에서 추출한 흄산(TJHA)과 Am(III), Eu(III)의 착물형성에 대한 안정도상수를 추출용매 di-2-ethylhexyl phosphoric acid와 희석제 toluene을 사용하여 용매추출법으로 구하였다. 이온강도가 0.1M NaCIO$_4$에서 TJHA의 총 carboxylate capacity를 직접 전위차적정법으로 분석한 결과 3.757 meq/g이고, apparent pKa는 5.15 이었다. TJHA와 Am(III) 및 Eu(III)의 조건부 안정도상수의 log$\beta$1 값과 log$\beta$2 값을 흄산의 이온화도 함수로 구한 결과, Eu-TJHA은 0.1M NaClO$_4$일때 log $\beta$1=5.948$\alpha$ + (6.83 $\pm$ 0.3) 및 log $\beta$2 = 5.687$\alpha$ + (10.44 $\pm$ 0.4)이며, Am-TJHA은 log$\beta$$_1$= 4.004 $\alpha$ + (6.96 $\pm$ 0.2) 및 log$\beta$$_2$= 3.719 $\alpha$ + (11.71 $\pm$ 0.2)이었다.

• 대한화학회지
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• 제45권6호
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• pp.577-588
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• 2001

조합화학 기법을 적용하여 $YRO_4$ (R=As, Nb, P, V)계 모체에 Eu을 활성하여 적색형광체를 합성하였다. 합성된 형광체는 UV PL,VUV PL, 및 색좌표 분석을 하였고, 254nm 및 147nm 여기하에서의 발광세기 및 색좌표 사면체 라이브러리를 완성하였다. Eu이 0.1 mol 도핑된 적색 형광체는 254nm로 여기 시켰을 때 $YRO_4$를 중심으로 다른 중심으로 다른 성분이 미량 첨가되었을 때 가장 좋은 발광 세기를 나타내었으나. 147nm에서는 $YRO_4$를 중심으로 좋은 발광 세기가 나타났다. 합성된 형광체 중 $Y_{0.9}$(A$S_{0.06}$N$B_{0.06}$$P_{0.83}$$V_{0.06}$) $O_4$: $Eu_{0.1}$의 조성으로 1200$^{\circ}C$에서 소성하였을 때 상용 형광체와 대등한 발광세기가 색순도가 우수하였다.

• Bulletin of the Korean Chemical Society
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• 제17권5호
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• pp.487-490
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• 1996

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.48.1-48.1
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• 2000

• 한국세라믹학회지
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• 제43권11호
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• 한국식품과학회지
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• 제35권3호
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• pp.423-428
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• 2003

신소재로 각광 받고 있는 chitosan의 낮은 수용성을 극복하기 위하여 chitosan 유도체인 eugenolchicosan(EuCs)을 제조하여 식품유화제로서의 적용을 위한 최적조건을 탐색하였다. 증류수와 옥배유의 혼합비율이 2:3(v/v)일 때 W/O형 유화계를 형성하였으며 유화안정성이 가장 높았다. 유화제로 사용한 EuCs는 단독으로 투입하였을 경우 첨가 농도가 0.18%(w/v)일 때 유화계가 가장 효율적으로 안정하였으며, 2종류 유화제(EuCs/polyoxyethylene sorbitan monolaurate)에 의한 유화안정성 상승효과를 확인할 수 있었지만 EuCs 단독사용 실험구와 유사한 ESI 값을 갖는 것으로 확인되었다. 저장온도에 따른 유화안정성 변화를 살펴본 결과, $25{\sim}65^{\circ}C$에서는 유화계가 매우 안정하였지만 $75^{\circ}C$ 이상의 저장온도에서 160분이 경과하면서 유화안정성이 급격하게 감소하는 경향을 나타내었다. 한편, 균질화 정도는 균질화 속도 11,000 rpm에서 10초 이상인 경우에 유화안정성이 최고에 도달하는 것으로 판명되었다. 또한, 본 논문에서 제조하여 유화핵 제조시 사용한 EuCs의 돌연변이원성은 음성으로 나타났으며, 유해성 금속은 검출되지 않았다. 따라서, EuCs는 W/O형 유화계 형성에 적합하면서도 안전성이 확보된 식품유화제로서의 적용가능성이 높은 것으로 판단되었다.

• 전자공학회논문지D
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• 제34D권2호
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• pp.27-37
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• 1997

Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and $Si_3N_4$ powders were used to synthesize $(Mg_xZn_{1-x})SiN_2$ host materials. $Tb_4O_7$ and $Eu_2O_3$ powdrs were added as luminescent centers. Very sharp emission spectra of $Tb^{3+}$ ions were observed from $Mg._5Zn._5SiN_2:Tb$ sampels sintered at $1400^{\circ}C$ for an hour and the maximum intensity of emission spectra occured at wavelength of 550nm (green light). Synthetic conditions of $(Mg_xZn_{1-x})SiN_2:Eu$ phosphors were optimized for the hghest luminescence. The Eu concentrations were varied from 0.2% to 1.6%. Before firing, the powders were mixed using ballmills, methanol, acetone, or D.I. water. The Mg/Zn ratio also were varied from x=0.3 to x=0.7. The maximum PL intensity was obtained from a sample with 1.2% Eu concentration and the powder was mixed with methanol and dried before firing. The maximum intensity of the emission spectra occurred t the wavelength of 470nm(blue light). TFEL devices fabricated by using sputter deposition of $(Mg._3Zn._7)SiN_2:Eu$ phosphor layer showed yellowish white emission at the phosphor field of 2MV/cm.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.112-117
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• 2004

$Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$(x=0.0, 0.3, 0.6, 1.0, 1.4) luminescent thin films have been grown on Si (100) substrates using pulsed laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, the surface morphology and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ films grown under optimized conditions have indicated that Si (100) is one of promised substrates for the growth of high quality $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ thin film red phosphor. In particular, the incorporation of Gd into $Y_2$ $O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with $Y_{1.35}$G $d_{0.60}$ $O_3$: $E^{3+}$, whose brightness was increased by a factor of 1.95 in comparison with that of $Y_2$ $O_3$:E $u^{3+}$ films.3+/ films.films.lms.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.235-238
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• 2009

BaMg$Al_{10}O_{17}$ (BAM) co-doped with $Eu^{2+}$ and $Mn^{2+}$ was synthesized in a solid-state reaction and their luminescence properties were investigated as functions of the concentrations of the sensitizer and activator. BAM:$Eu^{2+}$ had a broad blue emission band at 450 nm and BAM:$Mn^{2+}$ exhibited green emission at 514 nm. The energy transfer from $Eu^{2+}$ to $Mn^{2+}$ was mainly of the resonance-type via an electric dipole-quadrupole interaction. Additionally, the addition of various fluxes such as $AlF_3$ and $BaF_2$ in the synthesis improves the moist and thermal stability. This is particularly important for the phosphor in white light emitting diodes (LEDs).