• Title/Summary/Keyword: $Y_2BaCuO_5$substrate

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A study of $YBa_2Cu_3O_{7-\delta}$ Thick Films by a Diffusion Process Between $Y-2BaCuO_5$ Substrate and ($BaCuO_2+CuO$) ($Y-2BaCuO_5$기판과 ($BaCuO_2+CuO$) 분말의 확산법에 의한 $YBa_2Cu_3O_{7-\delta}$ 후막 연구)

  • 조동언;임성훈;한태희;한병선
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.351-354
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    • 1998
  • The formation of the $YBa_2Cu_30_{7_\delta}$(Y123) thick films has been investigated by a surface diffusion Imcess between $3BaCu0_2$+2CuO composite coating powder and a $Y_2BaCuO_5$(Y211). This reaction has been studied in the temperature of $930^{\circ}C$ and $940^{\circ}C$ for 2h to 10h in an oxygen atmosphere. The Y211 substrates becomes covered by co-precipitation of Y123 grains and CuO inclusions. X-ray diflractotnctn. revealed that the lager consisted of an orthorhombic crystal structure. The maximum Jc of $400A/\textrm{cm}^2$ is abtained when the specimen was heat-treated at $930^{\circ}C$ for 6h on the Y211 substrate.

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Characterization Of YBCO HTSC-Thick film With addiction of $CeO_2$ ($CeO_2$첨가에 따른 YBCO고온초전도 후막의 특성)

  • 윤기웅;임성훈;홍세은;강형곤;한용희;한병성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.239-242
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    • 2000
  • To fabricate YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process, $Y_2$BaCuO$_{5}$ and BaO+CuO as the material of substrate and the doping material were selected. CeO$_2$ in the doping material was mixed. As another doping material, YBa$_2$Cu$_3$O$_{x}$ was prepared for the comparison with BaO+CuO doping material. Each doping material was patterned on $Y_2$BaCuO$_{5}$ substrate by the screen printing method and then was annealed above peritectic reaction temperature of YBCO with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2$BaCuO$_{5}$ and BaO+CuO, the YBa$_2$Cu$_3$O$_{x}$ phase was formed. With an amout of addition of CeO$_2$, the thickness of a formed YBa$_2$Cu$_3$O$_{x}$ decreased. x/ decreased.

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The Study on Characterization of Current-limiting with Diffusion Thickness of High-Tc Superconductor Thick Film (고온초전도후막의 확산두께에 따른 전류제한 특성연구)

  • Im, Seong-Hun;Gang, Hyeong-Gon;Han, Tae-Hui;Mo, Chang-Ho;Im, Seok-Jin;Han, Byeong-Seong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.4
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    • pp.210-218
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    • 2000
  • For the fabrication of $YBa_2Cu_3O_x$ thick film, a substrate of $Y_2BaCuO_5$ was fabricated by adding $CeO_2$ into $Y_2BaCuO_5$ and two types of doping materials added with binder material were prepared. Each doping material was patterned on $Y_2BaCuO_5$substrate by the screen printing method and then was annealed at the temperature with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2BaCuO_5$ and each doping material, the $YBa_2Cu_3O_x$ phase was formed. And with n additive of $CeO_2$ the thickness of formed $YBa_2Cu_3O_x$decreased. From the experiment of current limiting on thick film, the sample with thiner thickness of $YBa_2Cu_3O_x$ showed the more effective characteristics of current limiting.

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A Study on the Growth Behavior of $Y_2Ba_1Cu_1O_5$ Phase in Y-Ma-Cu-O System (Y-Ma-Cu-O계에서 $Y_2Ba_1Cu_1O_5$상의 성장거동에 관한연구)

  • Im, Dae-Ho;Song, Myeong-Yeop;Park, Jong-Hyeon;Lee, Hui-Gyun;Won, Dong-Yeon;Hong, Gye-Won
    • Korean Journal of Materials Research
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    • v.4 no.8
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    • pp.870-876
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    • 1994
  • In order to investigate the growth behavior of $Y_{2}Ba_{1}Cu_{1}O_{5}$(211) particles in $Y_{1}Ba_{2}Cu_{3}O_{7-\delta}$(123), 123 samples were quenched in air after heat treatment on polycrystal and single crystal MgO substrates at $1100^{\circ}C$ for various periods. 211 grains grew with the increase in holding time. The growth of 211 grains was faster on the polycrystal MgO substrate than on the single crystal MgO substrate. In the samples with the compositions of 211+xCuO($0.2\le X \le 0.8$), the growth rate of 211 grains increased with the increase in CuO content. In the sample with x=0.6 the largest 211 grains were observed. 211 grains in the $Y_{2}Ba_{1}Cu_{1.8}Sn_{0.1}O_{5+\delta}$ samples were distributed very finely and homogeneously. The retarding effect of $SnO_2$ addition on the growth of 211 grain appeared more pronounced in a CuO melt than in a $BaCuO_{2}$+ CuO melt.

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Fabrication of Cu-Sheathed YBCO Thick Films by Screen Printing Method Using $Y_2$BaCu$O_5$ and BaC$O_3$ Powders (Y211 및 BaCO$_3$ 분말로 Screen Printing 법을 이용한 Cu-sheath의 YBCO 후막 제조)

  • 김경진;한상철;한영희;박병삼;정년호;윤희중;오제명;최희락;성태현
    • Progress in Superconductivity
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    • v.5 no.2
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    • pp.132-135
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    • 2004
  • We fabricated YBCO thick films by using a screen printing method with $Y_2$BaCuO$_{5}$(Y211) and BaCO$_3$ powders on Cu-substrate in $N_2$ atmosphere. Cu-sheathed YBCO thick film process is more simple and economic than YBCO coated conductor methods. The heat treatment is performed in the range of 860 - 875 $^{\circ}C$ for 5 min in the tube furnace of $N_2$ atmosphere. The flow rate of $N_2$ gas is fixed 60 $m\ell$/min. Microstructure and phases of thick films were investigated by optical microscope, X-ray diffraction(XRD) and SEM. At heat-treatment temperature, the thick films were partially melted by liquid reaction between CuO of oxidized copper substrate and the powders screen-printed on Cu-sheath. During the heat-treatment procedure, YBCO superconducting grains nucleate.e.

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Effect of $CeO_2$-addition and Particle Size of Doping Material on Characteristic of High-$T_c$ Superconducting Thick Film Using Diffusion Process ($CeO_2$첨가와 도포물질의 입자크기가 화산공정을 이용한 고온초전도 후막의 특성에 미치는 영향)

  • 임성훈;강형곤;홍세은;윤기웅;황종선;한병성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.2
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    • pp.152-157
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    • 2001
  • For the fabrication of YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process between $Y_3$BaCuO$_{5}$ and BaO+CuO, each material was selected as substrate and doping material. In this paper, we investigated the characteristic of YBa$_2$Cu$_3$O$_{x}$ thick film due to both addition of CeO$_2$into substrate and initial particle size of doping material. Through X-ray diffraction patterns and SEM photographs, the variation of composition and thickness of the formed phase was observed. It was from the experiment obtained that the addition of CeO$_2$into $Y_2$BaCuO$_{5}$ substrate and the initial particle size of doping material play important part in promoting the reaction between substrate and doping material.aterial.

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A Study on Characterization of Thick Film used as Superconducting Fault Current Limiter (고온 초전도 전류제한기용 후막의 특성 연구)

  • 조동언;박경국;김동원;정길도;한병성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.12
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    • pp.1139-1145
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    • 1998
  • In this paper, to fabricate a superconducting fault current limiter(FCL) of thick film type, $YBa_2Cu_3O_X superconducting thick films were fabricated by surface diffusion process using the screen printing method. Powder mixture of $3BaCuO_2$+2CuO was screen printed on $Y_2BaCuO_5$(d=15mm). And critical current densities of the thick films were observed as the sintering temperature(92$0^{\circ}C$~95$0^{\circ}C$) and holding time(2h~10h). Based on experimental data, the thick films for superconducting FCL were sintered at $940^{\circ}C$ in 2 hours. The superconducting FCL with a current limiting area of 1mm wide and 66mm long was prepared on $Y_2BaCuO_5$ substrate. To measure the characterization of the fabricated FCL, an alternating voltage (60Hz) was applied to the FCL in 77K liquid nitrogen. At an applied voltage of 4V, the FCL was limited from 20A into 0.6A not farther than 0.5ms.

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COMPOSITION OF SUPERCONDUCTING YBCO THIN FILMS WITH RF REACTIVE SPUTTERING CONDITIONS

  • Kim, H.H.;Kim, S.;Shin, S.H.;Park, J.I.;Park, K.J.
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.829-833
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    • 1996
  • Superconducting YBaCuO thin films were deposited on MgO (100) single crystal substrate by rf reactive sputtering method. Sputtering target was prepared by mixing the original powders of $Y_2O_3$, $BaCO_3$, and CuO at $830^{\circ}C$, and its composition was $YBa_2Cu_{3.3}O_x$ adding the excess CuO to compensate for the loss of Cu in the deposition process. The sputtering conditions for a high quality of YBCO thin film were: substrate temperature of 13$0^{\circ}C$; gas pressure of 10 mTorr; gas mixture ($O_2$: Ar =10: 90); distance of 2.5 inch; and rf power density of 4.87 W /$\textrm{cm}^2$. The deposition rate was 2.4~2.6 nm/min. From the RBS results, it was found that Cu and Ba contents in thin films decreased with the increase of substrate temperature. The increase of gas pressure resulted in significant deficiency of Ba elements.

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A study on $YBa_2Cu_3O_x$ thick films by diffusion process for a superconducting fault current limiter (확산법을 이용한 사고전류제한기용 $YBa_2Cu_3O_x$ 후막연구)

  • Cho, Dong-Eon;Yim, Seong-Woo;Choi, Myung-Ho;Han, Byoung-Sung
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1516-1518
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    • 1998
  • $YBa_2Cu_3O_x$(Yl23) Superconducting thick films on $Y_2BaCuO_5$(Y211) substrate were Prepared by surface diffusion process between $BaCuO_2$+CuO composite coating powder and a Y2ll substrate. X-ray diffraction shows that the Yl23 layer onto Y2ll substrate is the orthorhombic crystal structure. The specimen heated at $940^{\circ}C$ for 2h showed the maximum $J_c$ fo 500A/$cm^2$. Based on optimal condition, the superconducting fault current limiter(FCL) having a current limiting area 1mm wide and 66mm long was fabricated on Y211 substrate. A typical current limiting waveform was measured. When a voltage of 3V was applied, the fault current with a peak of 15A was limited to about 0.11A.

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The study on characterization of current limit and fabrication of device for current limit formed by thick film (후막형 전류제한소자제작과 전류제한특성 연구)

  • Lim, Sung-Hun;Kang, Hyeong-Gon;Choi, Myung-Ho;Han, Byung-Sung
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1704-1706
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    • 1999
  • $YBa_2Cu_3O_x$ superconducting thick film was fabricated by surface diffusion process of $Y_2BaCUO_5$ and the mixed compound of $(3BaCuO_2+2CuO)$ expected to be liquid phase above the peritectic temperature of YBa2Cu30x. For the surface diffusion. 3BaCu02+2CuO mixed with binder material was patterned on $Y_2BaCuO_5$ substrate by the screen printing method. The characteristic of current limit on thick film fabricated was measured. The thick film limited the current from $2.8213mA_{rms}$ to $4.2034mA_{rms}$ with $500{\Omega}$ load resistance, and from $4.1831mA{rms}$ to $4.2150mA_{rms}$ with $10{\Omega}$ load resistance.

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