• 대한방사선기술학회지:방사선기술과학
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• 제22권2호
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• pp.53-56
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• 1999

A Gaussian distribution was parametrized for the initial distribution of the electron beam emitted from a 6MeV medical linear accelerator. A percent depth dose was measured in a water phantom and the corresponding Monte Carlo calculations were performed starting from a Gaussian distribution for a range of standard deviations, ${\sigma}=0.1$, 0.15, 0.2, 0.25, and 0.3 with being the mean value for the Incident beam energy. When measurement and calculation were compared, the calculation with the Gaussian distribution for ${\sigma}=0.25$ turned out to agree best with the measurement. The results from the present work can be utilized as input energy data in planning an electron beam therapy with a Monte Carlo calculation.

• 조명전기설비학회논문지
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• 제25권11호
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• pp.98-102
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• 2011

This paper describes inverse E class frequency multiplier which is lower inductance and peak switching voltage than E class frequency multiplier. The frequency multiplier is designed to generate 5.8[GHz] frequency by doubling the input frequency 2.9[GHz]. The peak switching voltage of designed inverse E class frequency multiplier with 11[V] is lower 4[V] than that of E class frequency multiplier with 15[V]. The inverse E class frequency multiplier has a conversion gain 6[dB] at output power 21[dBm] and maximum 35[%] power efficiency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.230-233
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• 2004

The stochiometric mix of evaporating materials for the $CuInS_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuInS_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.524\;{\AA}$ and $11.142\;{\AA}$, respectively. To obtain the single crystal thin films, $CuInS_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperature were 640 t and 430 t, respectively and the thickness of the single crystal thin films was $2{\mu}m$. Hall effect on this sample was measured by the method of van dot Pauw and studied on carrier density and temperature dependence of mobility. The carrier density and mobility deduced from Hall data are $9.64{\times}10^{22}/m^3,\;2.95{\times}10^{-2}\;m^2/V{\cdot}s$ at 293 K, respectively The optical energy gaps were found to be 1.53 eV at room temperature. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the thin film, we have found that the values of spin orbit coupling splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0211 eV and 0.0045 eV at 10 K, respectively. From PL peaks measured at 10K, 807.7nm (1.5350ev) mean Ex peak of the free exciton emission, also 810.3nm (1.5301eV) expresses $I_2$ peak of donor-bound exciton emission and 815.6nm (1.5201eV) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 862.0nm (1.4383eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.99-100
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• 2010

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.387-388
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• 2010

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.361-364
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• 2004

Polarizers with high polarizing efficiency and other advanced optical films based on Lyotropic Dichroic Dyes have been developed for LCD and other applications. The developed optical films reveal both rod-like chromophores structure in a case of positive, or O-films and disc-like one for negative, or E-film.

• 한국결정성장학회지
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• 제14권6호
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• pp.244-252
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• 2004

$CuISe_2$ 단결정 박막은 수평 전기로에서 합성한 $CuInSe_2$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $620^{\circ}C$, $410^{\circ}C$로 고정하여 단결정 박막을 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 선 요동곡선(DCRC) 으로 부터 구하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 293K에서 운반자 농도와 이동도는 각각 $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs 였다. $CuAlSe_2$/Si(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293k에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g$(T)는 Varshni 공식에 따라 계산한 결과 1.1851 eV-($8.99\times10^{-4} eV/K)T^2$/(T+153k)였다. 광전류 스펙트럼으로 부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting Δcr값이 0.0087eV이며 spin-orbit Δso값은 0.2329 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n = 1일때 $A_1-, B_1$-와 $C_1$-exciton봉우리임을 알았다.

• E2M - 전기 전자와 첨단 소재
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• 제7권4호
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• pp.312-316
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• 1994

In this study, ln$_{1-x}$ Ga$_{x}$P alloy crystal which has different compositions were grown by the temperature gradient solution(TGS) method, and the properties of deep levels were measured in the temperature range of 9OK-450K. We find the four deep levels of E$_{1}$, E$_{2}$(248meV), E$_{3}$(386meV) and E$_{4}$(618meV) in GaP, which has composition of Ga in In$_{1-x}$ Ga$_{x}$P is one, and the trap densities of E$_{3}$ and E4 levels were 7.5*10$^{14}$ cm$^{-3}$ and 9*10$^{14}$ cm$^{-3}$ , respectively. A broad deep level spectra was revealed in In$_{1-x}$ Ga$_{x}$P whose composition of Ga, x, were 0.56 and 0.83, and the activation energy and trap densities were about 430meV and 6*10$^{14}$ cm$^{-3}$ , respectively.ectively.

• Transactions on Electrical and Electronic Materials
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• 제17권1호
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• pp.25-28
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• 2016

We investigate the effect of interface states on the endurance of a charge trap flash (CTF) NOR array using charge pumping methods. The endurance test was completed from one cell selected randomly from 128 bit cells, where the memory window value after 10² program/erase (P/E) cycles decreased slightly from 2.2 V to 1.7 V. However, the memory window closure abruptly accelerated after 10³ P/E cycles or more (i.e. 0.97 V or 0.7 V) due to a degraded programming speed. On the other hand, the interface trap density (Nit) gradually increased from 3.13×10¹¹ cm⁻² for the initial state to 4×10¹² cm⁻² for 10² P/E cycles. Over 10³ P/E cycles, the Nit increased dramatically from 5.51×10¹² cm⁻² for 10³ P/E cycles to 5.79×10¹² cm⁻² for 10⁴ P/E cycles due to tunnel oxide damages. These results show good correlation between the interface traps and endurance degradation of CTF devices in actual flash cell arrays.

• 대한화학회지
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• 제30권1호
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• pp.19-26
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• 1986

공기산화와 수증기 산화법에 의하여 Ti$O_{2-x}$박막을 만들었고, 알곤 기체속에서 $TiO_2$단결정을 환원하였다. Ti$O_{2x}박막의 전극 특성은 환원된 단결정 rutile의 특성과 거의 같았다. 산소가 용해된 전해질용액에서 측정된 Ti$O_{2-x}$전극들의 전류-전압 곡선으로 부터 음극전류의 peak는 -0.8V ~ -1.0V에서 나타났으며, 영볼트 근처의 Ti$O_{2-x}$전극들의 음극전류는 공기로 포화된 용액에서 보다 질소로 포화된 용액에서 더 크게 나타났다. 시간에 따르는 전류 (i)의 변화는 $i_0e^{-kt}$식에 의존하였고 이때의 속도상수(k)는 $k_0{[H^+]}^nexp(A{\eta}+\frac{E_a}{RT})$로 나타낼 수 있었다. 여기서 활성화에너지 Ea는 0.035~0.145V의 과전압에서는 4.6~4.8kcal/mole, 0.2~0.5V의 과전압에서는 1.6kcal/mole이고, 위식중의 n과 A는 0.035~0.145V에서 0.1과, 5.4~5.6/V, 0.2~0.5V에서는 0.04와 1.3/V이었다. 산소의 환원반응은 전체적으로 비가역 반응임을 알았다.