• Title/Summary/Keyword: $V_E$ Spectrum

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A Study point defect for thermal annealed ZnSe/GaAs epilayer

  • Hong, Kwang-Joon;Lee, Sang-Youl
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.120-123
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    • 2003
  • The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_2$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV. The exciton peak, $I_1^d$, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_1^d$ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{Se}-V_{Zn})-V_{Zn}$.

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Fabrication of SnO2/Zn Core-shell Nanowires and Photoluminescence Properties

  • Kong, Myung Ho;Kwon, Yong Jung;Cho, Hong Yeon;Kim, Hyoun Woo
    • Applied Science and Convergence Technology
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    • v.23 no.5
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    • pp.301-307
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    • 2014
  • We have fabricated $SnO_2$/Zn core-shell nanowires by employing a sputtering technique with a Zn target. Scanning electron microscopy indicated that the surface of the nanowires became rougher by the coating. X-ray diffraction of the coated nanowires exhibited the hexagonal Zn diffraction peaks. TEM image of coated structures showed that shell layer was mainly comprised of hexagonal Zn phase. EDX spectra suggested that the shell layer consisted of Zn elements. The photoluminescence spectrum of the coated nanowires in conjunction with Gaussian fitting analysis revealed that the emission was disconvoluted with three Gaussian functions, which are centered at 2.1 eV in the yellow region, 2.4 eV in the green region, and 3.3 eV in the ultraviolet region. We speculated the possible mechanisms of these emission peaks.

SPECTRUM WEIGHTED RESPONSES OF SEVERAL DETECTORS IN MIXED FIELDS OF FAST AND THERMAL NEUTRONS

  • Kim, Sang In;Chang, Insu;Kim, Bong Hwan;Kim, Jang Lyul;Lee, Jung Il
    • Nuclear Engineering and Technology
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    • v.46 no.2
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    • pp.273-280
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    • 2014
  • The spectrum weighted responses of various detectors were calculated to provide guidance on the proper selection and use of survey instruments on the basis of their energy response characteristics on the neutron fields. To yield the spectrum weighted response, the detector response functions of 17 neutron-measuring devices were numerically folded with each of the produced calibration neutron spectra through the in-house developed software 'K-SWR'. The detectors' response functions were taken from the IAEA Technical Reports Series No. 403 (TRS-403). The reference neutron fields of 21 kinds with 2 spectra groups with different proportions of thermal and fast neutrons have been produced using neutrons from the $^{241}Am$-Be sources held in a graphite pile, a bare $^{241}Am$-Be source, and a DT neutron generator. Fluence-average energy ($E_{ave}$) varied from 3.8 MeV to 16.9 MeV, and the ambient-dose-equivalent rate [$H^*(10)/h$] varied from 0.99 to 16.5 mSv/h.

Response Function of HPGe Detector using $^{23}Na$(p, $\gamma$)$^{24}Mg$ and $^{27}Al$(p, $\gamma$)$^{28}Si$ Reaction ($^{23}Na$(p, $\gamma$)$^{24}Mg$$^{27}Al$(p, $\gamma$)$^{28}Si$반응을 이용한 HPGe 검출기의 응답함수)

  • Park, Sang-Tae
    • Journal of Radiation Protection and Research
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    • v.35 no.2
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    • pp.85-90
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    • 2010
  • In the present work, peak relative efficiency for the energy was obtained and response function was worked out. This study was carried out using the high resolution high efficiency HPGe detector(diameter 78.7 mm, length 86.5 mm) and NaI(Tl) detector for anti-compton. The anti-coincidence of the signals from the two detectors could be used to lessen the Compton effect signal; thus, the $\gamma$-ray energy resolution could be improved. The $\gamma$-ray spectrum was measured at $55^{\circ}$ to the direction of the incident proton beam. Reaction spectrum was obtained from the $^{23}Na$(p, $\gamma$)$^{24}Mg$ reaction at $E_p$ = 1424 keV and $^{27}Al$(p, $\gamma$)$^{28}Si$ reaction at $E_p$ = 992 keV. To accelerate the incident proton which creates the (p, $\gamma$) capture reaction, the 3 MeV Pelletron accelerator at the Tokyo Institute of Technology was used. Response function was worked out by a noble technique. We worked out a response function from 1.2 to 9.4 MeV at intervals of 0.75 MeV.

The Measurement and Analysis of LiF:Mg, Cu, Na, Si TL Material by Thermoluminescence Spectrum (LiF:Mg, Cu, Na, Si TL 물질의 열자극발광스펙트럼 측정 및 분석)

  • Lee, J.I.;Moon, J.H.;Kim, D.H.
    • Journal of Korean Ophthalmic Optics Society
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    • v.6 no.1
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    • pp.149-153
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    • 2001
  • Three-dimensional thermoluminescence(TL) spectra of LiF: Mg, Cu, Na, Si TL material based on temperature, wavelength and intensity were measured and analyzed. The glow curves were obtained by integration of luminescence intensity for wavelength at each temperature, and various trapping parameters related to the trap formation were determined by analyzing these curves. Computerized glow curve deconvolution(CGCD) method which based on general order kinetics(GOK) model were used for the glow curve analysis. The glow curves of LiF:Mg, Cu, Na, Si TL material were deconvoluted to six isolated glow curves which have peak temperature at 333 K, 374 K, 426 K, 466 K, 483 K and 516 K, respectively. The 466 K main glow peak had an activation energy of 2.06 eV and a kinetic order of 1.05. This TL material was also found to have three recombination centers, 1.80 eV, 2.88 eV and 3.27 eV by TL spectra analysis based on Franck-Condon model. It showed that 2.88 eV is the dominant center, followed by 3.27 eV level, and 1.80 eV center is ascertained as emission center of this material even though its very weak emission intensity.

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Growth and characterization of CdTe single crystals by vertical Bridgman method (수직 Bridgman법에 의한 CdTe 단결정의 성장과 특성)

  • 정용길;신호덕;엄영호;박효열;진광수
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.2
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    • pp.220-228
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    • 1996
  • CdTe single crystals were grown by vertical Bridgman method using double furnace with two siliconit heating elements. When the peak temperature of the upper furnace was fixed at $1150^{\circ}C$ and that of the lower furnace was $800^{\circ}C$, the temperature gradient was about $22.5^{\circ}C$/cm. The lattice constant $a_0$ was $6.482\AA$ from the X-ray diffraction and the band gap energy obtained from the optical absorption experiment at room temperature was 1.478 eV. PL spectrum showed that the bound exciton emission peak was resolved into ($A^0,X$) (1.5902, 1.5887 eV), ($h\;D^0$) (1.5918 eV) and ($D^0,X$ (1.5928, 1.5932 eV), and we have also calculated binding energy and ionization energy of the neutral donor and acceptor.

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Valence Band Photoemission Study of Co/Pd Multilayer (광전자분광법을 이용한 Co/Pd 다층박막의 전자구조연구)

  • Kang, J.-S.;Kim, S.K.;Jeong, J.I.;Hong, J.H.;Lee, Y.P.;Shin, H.J.;Olson, C.G.
    • Journal of the Korean Magnetics Society
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    • v.3 no.1
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    • pp.48-55
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    • 1993
  • We report the photoemission (PES) studies for the Co/Pd multilayter. The Co 3d PES spectrum of Co/Pd exhibits two interesting features, one near the Fermi energy, $E_{F}$, and another at ~2.5 eV below $E_{F}$. The Co 3d peak near $E_{F}$ of Co/Pd is much narrower than that of the bulk Co, consistent with the enhanced Co magnetic moment in Co/Pd compared to that in the bulk Co. The Co 3d feature at ~-2.5 eV resembles the Pd valence band structures, which suggests a substantial hybridization between the Co and Pd sublayers. The Co 3d PES spectrum of Co/Pd is compared with the existing band structures, obtained using the local spin density functional calculations. A reasonable agreement is found concerning the bandwidth of the occupied part of the Co 3d band, whereas a narrow Co 3d peak near $E_{F}$ seems not to be described by the band structure calculations.

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The study on photoreflectance characteristics of the $Al_xGa_{1-x}As$ epilayer grown by MBE method (MBE 법으로 성장시킨 $Al_xGa_{1-x}As$ 에피층의 Photoreflectance 특성에 관한 연구)

  • 이정렬;김인수;손정식;김동렬;배인호;김대년
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.341-347
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    • 1998
  • We analyzed photoreflectance (PR) characterization of the $Al_xGa_{1-x}As$ epilayer grown by molecular beam epitaxy (MBE) method. The band-gap energy $(E_0)$ satisfying low power Franx-Keldysh (LPFK) due to GaAs buffer layer is 1.415 eV, interface electricall field $(E_i)$ is 1.05$\times$$10^4$V/cm, carrier concentration (N) is $1.3{\times}10^{15}\textrm{cm}^{-3}$. In PR spectrum intensity analysis at 300 K the $A^*$ peak below $(E_0)$ signal is low and distorted because of residual impurity in sample growth. The trap characteristic time ${\tau}_i$ of GaAs buffer layer is about 0.086 ms, and two superposed PR signal near 1.42eV consist of the third derivative signal of chemically eteched GaAs substrate and Franz-Keldysh oscillation (FKO) signal due to GaAs buffer layer.

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Growth and photocurrent properties for the $AgInS_{2}$ epilayers by hot wall ep itaxy (Hot wall epitaxy 방법에 의한 $AgInS_{2}$ 박막의 성장과 광전류특성)

  • Hong, K.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.08a
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    • pp.92-96
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    • 2002
  • A silver indium sulfide $(AgInS_{2})$ epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_{2}$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-ta-band transition. The valence band splitting of $AgInS_{2}$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$, and the spin orbit splitting, $\Delta_{so.}$ have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}(T)$, was determined.

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Characterization of Endolysin LysECP26 Derived from rV5-Like Phage vB_EcoM-ECP26 for Inactivation of Escherichia coli O157:H7

  • Park, Do-Won;Park, Jong-Hyun
    • Journal of Microbiology and Biotechnology
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    • v.30 no.10
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    • pp.1552-1558
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    • 2020
  • With an increase in the consumption of non-heated fresh food, foodborne shiga toxin-producing Escherichia coli (STEC) has emerged as one of the most problematic pathogens worldwide. Endolysin, a bacteriophage-derived lysis protein, is able to lyse the target bacteria without any special resistance, and thus has been garnering interest as a powerful antimicrobial agent. In this study, rV5-like phage endolysin targeting E. coli O157:H7, named as LysECP26, was identified and purified. This endolysin had a lysozyme-like catalytic domain, but differed markedly from the sequence of lambda phage endolysin. LysECP26 exhibited strong activity with a broad lytic spectrum against various gram-negative strains (29/29) and was relatively stable at a broad temperature range (4℃-55℃). The optimum temperature and pH ranges of LysECP26 were identified at 37℃-42℃ and pH 7-8, respectively. NaCl supplementation did not affect the lytic activity. Although LysECP26 was limited in that it could not pass the outer membrane, E. coli O157: H7 could be effectively controlled by adding ethylenediaminetetraacetic acid (EDTA) and citric acid (1.44 and 1.14 log CFU/ml) within 30 min. Therefore, LysECP26 may serve as an effective biocontrol agent for gram-negative pathogens, including E. coli O157:H7.