• Title/Summary/Keyword: $V_E$ Spectrum

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Photoluminescence and Photoluminescence Excitation Spectra of Mg-codoped GaN:Er (Mg가 첨가된 GaN:Er 발광 현상에 관한 연구)

  • 김상식;성만영;홍진기
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.33-38
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    • 2000
  • The ~1540 nm Er$^{3+}$ photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Er-implanted Mg-codoped GaN (GaN:Er+Mg) exhibit that the excitation efficiency of a specific Er$^{3+}$ center among different Er$^{3+}$ centers existing in Er-implanted GaN is selectively enhanced, compared to Er-implanted undoped GaN (GaN:Er). In GaN:Er+Mg, the 1540 nm PL peaks characteristic of the so-called "violet-pumped" Er$^{3+}$ center and the ~2.8-3.4 eV (violet) PLE band are significantly strengthened by the Mg-doping. The intra-f absorption PLE bands associated with this "violet-pumped" center are also enhanced by this doping. The 1540 nm PL peaks originating from the violet-pumped center dominate the above-gap-excited Er$^{3+}$ PL spectrum of GaN:Er+Mg, whereas it was unobservable under above-gap excitation in GaN:Er. All of these results indicate that Mg doping increases the efficiency of trap-mediated excitation of Er$^{3+}$ emission in Er-implanted GaN.planted GaN.

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Isomer Differentiation Using in silico MS2 Spectra. A Case Study for the CFM-ID Mass Spectrum Predictor

  • Milman, Boris L.;Ostrovidova, Ekaterina V.;Zhurkovich, Inna K.
    • Mass Spectrometry Letters
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    • v.10 no.3
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    • pp.93-101
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    • 2019
  • Algorithms and software for predicting tandem mass spectra have been developed in recent years. In this work, we explore how distinct in silico $MS^2$ spectra are predicted for isomers, i.e. compounds having the same formula and similar molecular structures, to differentiate between them. We used the CFM-ID 2.0/3.0 predictor with regard to (a) test compounds, whose experimental mass spectra had been randomly sampled from the MassBank of North America (MoNA) collection, and to (b) the most widespread isomers of test compounds searched in the PubChem database. In the first validation test, in silico mass spectra constitute a reference library, and library searches are performed for test experimental spectra of "unknowns". The searches led to the true positive rate (TPR) of ($46-48{\pm}10$)%. In the second test, in silico and experimental spectra were interchanged and this resulted in a TPR of ($58{\pm}10$)%. There were no significant differences between results obtained with different metrics of spectral similarity and predictor versions. In a comparison of test compounds vs. their isomers, a statistically significant correlation between mass spectral data and structural features was observed. The TPR values obtained should be regarded as reasonable results for predicting tandem mass spectra of related chemical structures.

High-resolution Near-infrared Spectroscopy of IRAS 16316-1540: Evidence of Accretion Burst

  • Yoon, Sung-Yong;Lee, Jeong-Eun;Park, Sunkyung;Lee, Seokho;Herczeg, Gregory J.;Mace, Gregory;Lee, Jae-Joon
    • The Bulletin of The Korean Astronomical Society
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    • v.44 no.1
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    • pp.42.3-42.3
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    • 2019
  • The high-resolution near-infrared (NIR) spectroscopy can reveal the evidence of the accretion burst (e.g., the broadened absorption features produced by the Keplerian disk motion) although the moment of the outburst was not caught. The embedded protostar IRAS 16316-1540 observed with the Immersion Grating Infrared Spectrograph (IGRINS, $R={\Delta}{\lambda}/{\lambda}{\sim}45000$) shows the broad absorption features in atomic and CO transitions, as seen in FU Orionis objects (FUors), indicative of an outburst event. We examine whether the spectra of IRAS 16316-1540 arise from the rotating inner hot gaseous disk. Using the IGRINS spectral library, we show that the line profiles of IRAS 16316-1540 are more consistent with an M1.5 V template spectrum convolved with a disk rotation profile than the protostellar photosphere absorption features with a high stellar rotation velocity. We also note that the absorption features deviated from the expected line profile of the accretion disk model can be explained by a turbulence motion generated in the disk atmosphere. From previous observations that show the complex environment and the misaligned outflow axes in IRAS 16316-1540, we suggest that an impact of infalling clumpy envelope material against the disk induces the disk precession, causing the accretion burst from the inner disk to the protostar.

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Characteristics of $K_2NiF_4$-Type Oxides $(Sr,Sm)_2FeO_{~4}$

  • 요철현;이은석
    • Bulletin of the Korean Chemical Society
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    • v.17 no.4
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    • pp.321-324
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    • 1996
  • Sr1+xSm1-xFeO4-y solid solutions with a composition range 0.00 ≤x≤1.00 have been prepared at 1200 ℃ in air under normal atmospheric pressure. All the solutions exhibit the K2NiF4-type structure of tetragonal system. Mohr salt analysis shows that the mole ratio of Fe4+ ion to Fe3+ ion or the τ value increases with the x value. Nonstoichiometric chemical formulas have been formulated from the x, τ, and y values. Electrical conductivity was measured in the temperature range of 173-373 K under atmospheric air pressure. The conductivities of each sample are varied within the semiconductivity range. The conductivity at constant temperature increases steadily with x value and activation energies are varied from 0.14 to 0.32 eV. The conduction mechanism of the ferrite system may be proposed as a hopping model of conduction electrons between the mixed valence states. The Mossbauer spectrum for the composition of x=0.00 shows a six line pattern by which the existence of Fe3+(I.S.=0.32 mm/sec) can only be identified. The spectra for the compositions of x=0.50 and 1.00 presents broad single line patterns showing a mixed valence state.

Crystal Growth Sensor Development of II-VI Compound Semiconductor : CdS (II-VI족 화합물 반도체의 결정성장 및 센서 개발에 관한 연구)

  • D.I. Yang;Y.J. Shin;S.Y. Lim;Y.D. Choi
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.126-133
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    • 1992
  • This study deals with the crystal growth and the optical characteristics of CdS thin films activatedby silver. CdS:Ag thin films were deposited by using an electron beam evaporation(EBE) technique in vacuumof 1.5X 10-'torr, voltage of 4 kV, current of 2.5 mA and substrate temperature of 250$^{\circ}$C CdS:Ag photoconductivefilms prepared by EBE method show high photoconductivity after annealing at about 550"c for 0.5 h in air andAr gas.The grain size of CdS:Ag thin films annealed in Ar atmosphere (1 atm) was grown over 1 ym and the thicknessof the films is 4-5 pm. The analysis of X-ray diffraction patterns shows that the crystal structures are hexagonal.The diffraction line by (00.2) plane can only be observed, indicating that c-axis of hexagonal grows preferentiallyperpendicular to the substrate. The profiles of photoluminescence spectra of CdS:Ag films show Gaussian typecurves at room temperature, the maximum peak spectral sensitivity of CdS:Ag is located at the wavelength of520 nm.We annealed CdS:Ag thin films in air and Ar vapor in order to make the CdS photoconductors having theintensive photocurrent, the broad distribution of the photocurrent spectrum and the large value of the ratioof the photocurrent (pc) to the dark current(dc). We found that CdS:Ag thin films annealed in air atmospherewas the best one.air atmosphere was the best one.

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Damage studies on irradiated tungsten by helium ions in a plasma focus device

  • Seyyedhabashy, Mir mohammadreza;Tafreshi, Mohammad Amirhamzeh;bidabadi, Babak Shirani;Shafiei, Sepideh;Nasiri, Ali
    • Nuclear Engineering and Technology
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    • v.52 no.4
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    • pp.827-834
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    • 2020
  • Damage of tungsten due to helium ions of a PF device was studied. The tungsten was analyzed by SEM and AFM after irradiation. SEM revealed fine bubbles of helium atoms with diameters of a few nanometers, which join and form larger bubbles and blisters on the surface of tungsten. This observation confirmed the results of molecular dynamics simulation. SEM analysis after etching of the irradiated surface indicated cavities with depth range of 35-85 nm. The average fluence of helium ion of the PF device was calculated about 5.2 × 1015 cm-2 per shot, using Lee code. Energy spectrum of helium ions was estimated using a Thomson parabola spectrometer as a function of dN/dE ∝ E-2.8 in the energy range of 10-200 keV. The characteristics of helium ion beam was imported to SRIM code. SRIM revealed that the maximum DPA and maximum helium concentration occur in the depth range of 20-50 nm. SRIM also showed that at depth of 30 nm, all of the tungsten atoms are displaced after 20 shots, while at depth of higher than 85 nm the destruction is insignificant. There is a close match between SRIM results and the measured depths of cavities in SEM images of tungsten after etching.

Clinical Study of Augmentin (Augmentin 의 임상효과)

  • Kim, Hyeong-Muk;Im, Chang-Yeong
    • Journal of Chest Surgery
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    • v.19 no.1
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    • pp.174-179
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    • 1986
  • Augmentin is a formulation of amoxycillin trihydrate and potassium clavulanate, a fused beta-lactam molecule produced by the fermentation of Streptomyces clavuligerus. Most clinically important resistance is due to the production by bacteria of antibiotic destroying enzymes. In the case of penicillins and cephalosporins these enzymes are termed beta-lactamase as they destroy the beta-lectern ring of these antibiotics, completely inactivating them. The presence of clavulanic acid extends the spectrum of amoxycillin to include bet On clinical study of the intravenous Augmentin in the field of thoracic and cardiovascular surgical cases, we selected randomly 30 patients, 21 male and 9 female, age from 13 to 72, in the period from April to December 1985. Among the total 30 patients, 22 were preoperatively infected [11 thoracic empyema, 5 lobar pneumonia, 2 lung abscess, 2 bronchiectasis, one acute pyelonephritis with ureter stone and one rheumatic carditis], and 8 were not infected preoperatively [Table 1, 2]. Of the preoperatively infected group, 11 cases [50%] were culture positive [4 staphylococcus, 3 pseudomonas, 2 Serratia group, and one E. coli], and preoperatively non-infected group [8 cases] revealed expectedly negative findings on bacterial culture. All of the culture positive bacteria were sensitive to Augmentin on disc culture sensitivity test except one case of E. coli. Daily doses of intravenous Augmentin were 2.-1-6.0gm divided in 2-5 injections. Every injection administered [1.2gm at Augmentin dissolved in 20ml distilled water] slowly for more than 20 minutes. Duration of injection was variable according to the clinical conditions from minimum 5 to maximum 31 days. The results of antibiotic treatment with Augmentin and some other antibiotic combinations pre- and postoperatively were subgrouped as EXCELLENT, EFFECTIVE, and FAILURE. Clinical criteria of the therapeutic result were symptomatic, objective and laboratory improvement. 8 cases were excellent, 13 effective, and one failure among the preoperatively infected group, and all 8 cases of the preoperatively non-infected group were effective as pro;hylactive antibiotic therapy. Overall effective ratio was 97% in both subgroup. There was no side effect clinically and laboratory study including liver and kidney function test during and after the I.V. administration of Augmentin. Oral swallow tablets which were administered after discharge from hospital also revealed good effects with some degree of gastrointestinal trouble.

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Electrochemical Properties of Binuclear Nickel(II) and Copper(II) Complexes with Tetradentate Schiff Base in Aprotic Solvents (1) (비수용매에서 이핵성 네자리 Schiff Base Nickel(II) 및 Copper(II) 착물들의 전기화학적 성질 (제 1 보))

  • Chjo Ki-Hyung;Choi Yong-Kook;Seo Seong-Seob;Lee Song-Ju
    • Journal of the Korean Chemical Society
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    • v.35 no.1
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    • pp.24-37
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    • 1991
  • We synthesized the binuclear Tetradentate Schiff base nickel(II) and copper(II) complexes ; [Ni(II)$_2$(SMPO)$_2$(L)$_2$], [Ni(II)$_2$(SPPD)$_2$(L)$_2$] and [Cu(II)$_2$(SMPD)$_2$] and [Cu(II)$_2$(SPPD)$_2$] (where, L : Py, DMSO and DMF). We identified the structure of these complexes by elemental analysis, IR-spectrum, T.G.A, D.S.C and ESR measurements. According to the results of cyclic voltammetry and DPP measurements in aprotic solvent included 0.1M TEAP as supporting electrolyte, we knew that diffusional controlled redox process of one step with one electron was irreversible process in 0.1M TEAP-Py solution. Also it was reversible or quasi reversible process in 0.1M TEAP-DMSO solution and reversible or E.C reaction mechanism in 0.1M TEAP-DMF solution at mononuclear complexes ; [Cu(II)(SOPD)] and [Ni(II)(SOPD)(L)$_2$]. But, we knew that diffusional controlled redox process of two step for one electron of binuclear complexes was as follows. The values of redox potential for dimeric complexes in 0.1M TEAP-L solution (where, L ; Py, DMSO and DMF) with scan rate 100mV/sec.

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Nano-scale Patterning on Diamond substrates using an FIB (FIB를 이용한 다이아몬드 기판 위의 나노급 미세 패턴의 형상 가공)

  • Song, Oh-Sung;Kim, Jong-Ryul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.6
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    • pp.1047-1055
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    • 2006
  • We patterned nano-width lines on a super hard bulk diamond substrate by varying the ion beam current and ion beam sources with a dual beam field ion beam (FIB). In addition, we successfully fabricated two-dimensional nano patterns and three-dimensional nano plate modules. We prepared nano lines on a diamond and a silicon substrate at the beam condition of 30 kV, 10 pA $\sim$ 5 nA with $Ga^+$ ion and $H_2O$ assisted ion sources. We measured each of the line-width, line-depth, etched line profiles, etch rate, and aspect ratio, and then compared them. We confirmed that nano patterning was possible on both a bulk diamond and a silicon substrate. The etch rate of $H_2O$ source can be enhanced about two times than that of Ga source. The width of patterns on a diamond was smaller than that on a silicon substrate at the same ion beam power The sub-100 nm patterns on a diamond were made under the charge neutralization mode to prevent charge accumulation. We successfully made a two-dimensional, 240 nm-width text of the 300-lettered Lord's Prayer on a gem diamond with 30 kV-30 pA FIB. The patterned text image was readable with a scanning electron microscope. Moreover, three dimensional nano-thick plate module fabrication was made successfully with an FIB and a platinum deposition, and electron energy loss spectrum (EELS) analysis was easily performed with the prepared nano plate module.

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Fabrication and Characterization of Si Quantum Dots in a Superlattice by Si/C Co-Sputtering (실리콘과 탄소 동시 스퍼터링에 의한 실리콘 양자점 초격자 박막 제조 및 특성 분석)

  • Kim, Hyun-Jong;Moon, Ji-Hyun;Cho, Jun-Sik;Park, Sang-Hyun;Yoon, Kyung-Hoon;Song, Jin-Soo;O, Byung-Sung;Lee, Jeong-Chul
    • Korean Journal of Materials Research
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    • v.20 no.6
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    • pp.289-293
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    • 2010
  • Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.