• 제목/요약/키워드: $V_E$ Spectrum

검색결과 319건 처리시간 0.033초

Computer-simulation with Different Types of Bandgap Profiling for Amorphous Silicon Germanium Thin Films Solar Cells

  • 조재현;이준신
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.320-320
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    • 2014
  • Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

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Bone-like Apatite Formation on Ultrafine-Structure in Modified Electrolytic Solution

  • Jang, Jae-Myung;Choe, Han-Cheol
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2017년도 춘계학술대회 논문집
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    • pp.155-155
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    • 2017
  • Surface modifications are commonly utilized to adjust the properties of the titanium and its alloy surface to the specific needs of the medical applications, but there are disadvantages such as poor osteoconductive properties and low adhesion of bone cell to implant surface. In order to improve these disadvantages, changes in surface properties have an important effect on osseointegration during implantation. In this paper we applied new technological method for improving a unique surface modification using the characteristic of an electrolytic Solution. Thus, in the electrolyte containing NaF in Na2SO4, TiO2 nanoporous was uniformly formed, and HAp nanoparticles were electrodeposited around the TiO2 nanopores, but in the electrolyte containing NH4F in (NH4)H2PO4, the coarse protrusions including HAp nano particles were regularly deposited onto the TiO2 barrier layer. The surface characteristics and the distributed elements and have been investigated by EDS analysis, and ultra-fine structure of surface are carried out using FE-SEM. To investigate the behavior of the anion, the analysis of chemical states was performed by XPS, and the narrow spectrums for Ti2P, Ca 2p, and P 2p seems to be almost similar depending on the characteristics of the electrolyte solution respectively. In addition, Ca 2p spectrum could be resolved into two peaks for Ca 2p3/2 and 2p1/2 at 347.4 and 351.3 eV, which are related to hydroxyapatite. And, the P peak can also be deconvoluted into two peaks for P1/2 and P3/2 levels with binding energy 134.2 and 133.4 eV, respectively. From the result of soaking test, the apatite morphologys were well-formed onto the modified surface according to the different conditions.

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Purification and Characterization of Phocaecin PI80: An Anti-Listerial Bacteriocin Produced by Streptococcus phocae PI80 Isolated from the Gut of Peneaus indicus (Indian White Shrimp)

  • Satish Kumar, Ramraj;Arul, Venkatesan
    • Journal of Microbiology and Biotechnology
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    • 제19권11호
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    • pp.1393-1400
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    • 2009
  • A bacteriocin-producing strain PI80 was isolated from the gut of Penaeus indicus (Indian white shrimp) and identified as Streptococcus phocae PI80. The bacteriocin was purified from a culture supernatant to homogeneity as confirmed by Tricine SDS-PAGE. Reverse-phase HPLC analysis revealed a single active fraction eluted at 12.94 min, and MALDI-TOF mass spectrometry analysis showed the molecular mass to be 9.244 kDa. This molecular mass does not correspond to previously described streptococcal bacteriocins. The purified bacteriocin was named phocaecin PI80 from its producer strain, as this is the first report of bacteriocin production by Streptococcus phocae. The bacteriocin exhibited a broad spectrum of activity and inhibited important pathogens: Listeria monocytogenes, Vibrio parahaemolyticus, and V. fischeri. The antibacterial substance was also sensitive to proteolytic enzymes: trypsin, protease, pepsin, and chymotrypsin, yet insensitive to catalase, peroxidase, and diastase, confirming that the inhibition was due to a proteinaceous molecule (i.e., the bacteriocin), and not due to hydrogen peroxide or diacetyl. Phocaecin PI80 moderately tolerated heat treatment (up to $70^{\circ}C$ for 10 min) and resisted certain solvents (acetone, ethanol, and butanol). A massive leakage of $K^+$ ions from E. coli $DH5\alpha$, L. monocytogenes, and V. parahaemolyticus was induced by phocaecin PI80, as measured by Inductively Coupled Plasma Optical Emission Spectrometry (ICPOES). Therefore, the results of this study show that phocaecin PI80 may be a useful tool for inhibiting L. monocytogenes in seafood products that do not usually undergo adequate heat treatment, whereas the cells of Streptococcus phocae PI80 could be used to control vibriosis in shrimp farming.

In0.49Ga0.51P/GaAs 이종접합 구조의 표면 광전압 특성 (Surface Photovoltage Characterization of In0.49Ga0.51P/GaAs Heterostructures)

  • 김정화;김인수;배인호
    • 한국진공학회지
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    • 제19권5호
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    • pp.353-359
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    • 2010
  • Metal-organic chemical vapour deposition (MOCVD) 법으로 성장된 $In_{0.49}Ga_{0.51}P$/GaAs 이종접합 구조의 특성을 표면 광전압(surface photovoltage; SPV) 분광법으로 조사하였다. SPV 측정은 입사광의 세기, 변조 주파수, 온도의 함수로 수행하였다. 상온에서 시료의 띠간격 에너지(band gap energy)는 GaAs와 $In_{0.49}Ga_{0.51}P$는 각각 1.400 및 1.893 eV이었다. 광세기를 증가시킴에 따라 SPV 크기는 증가하는 반면에, 변조 주파수를 증가시킴에 따라 SPV 크기는 감소하였다. 그리고 SPV 스펙트럼의 온도 의존성으로부터 GaAs와 $In_{0.49}Ga_{0.51}P$의 띠간격 에너지의 변화를 Varshni 및 Bose-Einstein 표현에 의해 분석하였다.

RF 마그네트론 스퍼터링법으로 성장시킨 CuS 박막의 구조적 및 광학적 특성 (Structural and Optical Properties of CuS Thin Films Grown by RF Magnetron Sputtering)

  • 신동혁;이상운;손창식;손영국;황동현
    • 한국표면공학회지
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    • 제53권1호
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    • pp.9-14
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    • 2020
  • CuS (copper sulfide) thin films having the same thickness of 100nm were deposited on the glass substrates using by radio frequency (RF) magnetron sputtering method. RF powers were applied as a process variable for the growth of CuS thin films. The structural and optical properties of CuS thin films deposited under different power conditions (40-100W) were studied. XRD analysis revealed that all CuS thin films had hexagonal crystal structure with the preferential growth of (110) planes. As the sputtering power increased, the relative intensity of the peak with respect to the (110) planes decreased. The peaks of the two bands (264cm-1 and 474cm-1) indicated in the Raman spectrum exactly matched the typical spectral values of the covellite (CuS). The size and shape of the grains constituting the surface of the CuS thin films deposited under the power condition ranging from 40W to 80W hardly changed. However, the spacing between crystal grains tended to increase in proportion to the increase in sputtering power. The maximum transmittance of CuS thin films grown at 40W to 80W ranged from 50 % to 51 % based on 580nm wavelength, and showed a relatively small decrease of 48% at 100W. The band gap energy of the CuS thin films decreased from 2.62eV (at 40W) to 2.56eV (at 100W) as the sputtering power increased.

Thermal plasma arc discharge method for high-yield production of hexagonal AlN nanoparticles: synthesis and characterization

  • Lakshmanan Kumaresan;Gurusamy Shanmugavelayutham;Subramani Surendran;Uk Sim
    • 한국세라믹학회지
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    • 제59권
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    • pp.338-349
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    • 2020
  • Large scale with high-purity hexagonal aluminum nitride nanoparticles (AlN NPs) was synthesized using DC thermal plasma arc discharge method (TPAD). Argon gas was used as the plasma forming gas, while ammonia (NH3) gas was used as the reactive gas, which was fed into the reactor at a constant flow rate of 5 LPM. In order to optimize the process for high yield, the experiments were carried out at various plasma input powers, such as 1.5, 3.0, and 4.5 kW. Following the optimization, to examine the influence of using pure nitrogen gas, an experiment was also carried out in the nitrogen ambience. The phase identification and structural determination of the synthesized NPs were carried out using XRD and Raman spectroscopic analyses. While the morphology, particle size, and elemental compositions of the synthesized NPs were observed from SEM, HRTEM, XPS, and EDX analyses. The photoluminescence response was confirmed from the PL spectrum. The PL emission peaks observed around 440 nm (2.8 eV) and 601 nm (2.07 eV), respectively, which correspond to the UV blue and red band emissions of both AlN and Al/AlN NPs. The results show that the synthesized nano-AlN NPs exhibit excellent crystallinity with a high yield of approximately 210 g/h. The current plasma technology can be regarded as a perfect potential process for developing nano-AlN powders with improved efficiency.

확장된 slip-weakening 모델의 응력 강하량과 에너지 수지 특성 및 스케일링 관계 (Characteristics of Stress Drop and Energy Budget from Extended Slip-Weakening Model and Scaling Relationships)

  • 최항;윤병익
    • 한국지진공학회논문집
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    • 제24권6호
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    • pp.253-266
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    • 2020
  • The extended slip-weakening model was investigated by using a compiled set of source-spectrum-related parameters, i.e. seismic moment Mo, S-wave velocity Vs, corner-frequency fc, and source-controlled high-cut frequency fmax, for 113 shallow crustal earthquakes (focal depth less than 25 km, MW 3.0~7.5) that occurred in Japan from 1987 to 2016. The investigation was focused on the characteristics of stress drop, radiation energy-to-seismic moment ratio, radiation efficiency, and fracture energy release rate, Gc. The scaling relationships of those source parameters were also investigated and compared with those in previous studies, which were based on generally used singular models with the dimensionless numbers corresponding to fc given by Brune and Madariaga. The results showed that the stress drop from the singular model with Madariaga's dimensionless number was equivalent to the breakdown stress drop, as well as Brune's effective stress, rather than to static stress drop as has been usually assumed. The scale dependence of stress drop showed a different tendency in accordance with the size category of the earthquakes, which may be divided into small-moderate earthquakes and moderate-large earthquakes by comparing to Mo = 1017~1018 Nm. The scale dependence was quite similar to that shown by Kanamori and Rivera. The scale dependence was not because of a poor dynamic range of recorded signals or missing data as asserted by Ide and Beroza, but rather it was because of the scale dependent Vr-induced local similarity of spectrum as shown in a previous study by the authors. The energy release rate Gc with respect to breakdown distance Dc from the extended slip-weakening model coincided with that given by Ellsworth and Beroza in a study on the rupture nucleation phase; and the empirical relationship given by Abercrombie and Rice can represent the results from the extended slip-weakening model, the results from laboratory stick-slip experiments by Ohnaka, and the results given by Ellsworth and Beroza simultaneously. Also the energy flux into the breakdown zone was well correlated with the breakdown stress drop, ${\tilde{e}}$ and peak slip velocity of the fault faces. Consequently, the investigation results indicate the appropriateness of the extended slip-weakening model.

혼합원자가 $Sr_{1+x}Dy_{1-x}FeO_{4-y}$훼라이트계의 비화학양론과 물성 연구 (A Study on Nonstoichiometry and Physical Properties of the Mixed Valency $Sr_{1+x}Dy_{1-x}FeO_{4-y}$Ferrite System)

  • 여철현;이은석;편웅범;편무실
    • 대한화학회지
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    • 제32권1호
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    • pp.3-8
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    • 1988
  • $K_2NiF_4$ 형 층상구조를 갖는 새로운 $Sr_{1+x}Dy_{1-x}FeO_{4-y}$ 계에서 x = 0. 00, 0. 25, 0. 50, 0. 75 및 1. 00 인 비화학양론적 화합물 고용체를 1200$^{\circ}$C 대기압하에서 제조하였다. X-선 회절분석에 의하여 결정구조학적 상들은 모든 시료의 경우 정방정계임을 알 수 있었다. Mohr 염 분석으로 비화학양론적 화학식을 결정하였고 x가 증가함에 따라 $Fe^{4+}$의 몰수(${\tau}$값)가 증가하였다. $-100{\sim}200^{\circ}$C의 온도범위에서 측정한 각 시료의 전기전도도는 $l0^{-8}{\sim}10^{-2}(ohm^{-1}{\cdot}cm^{-1}$)범위의 반도성을 보이며 활성화 에너지는 0.02∼0.08(eV)의 범위에서 변하였다. $Sr_{1.00}Dy_{1.00}FeO_{4.04}$에 대한 $Fe^{3+}$$Fe^{4+}$의 혼합원자가 상태를 200K에서 측정한 Mossbauer spectrum으로 재확인하였다.

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플라즈마 진단을 위한 이온에너지 분석장치의 제작 및 특성 조사 (Fabrication and Its Characteristics of Ion Energy Spectrometer for Diagnostics of Plasma)

  • 김계령;김완;이용현;강희동
    • 센서학회지
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    • 제7권3호
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    • pp.163-170
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    • 1998
  • 플라즈마 이온온도를 측정하기 위해 정전평판형 이온에너지 분석기를 설계 제작하고 에너지 교정 및 에너지 분해능 등의 특성을 조사하였다. 일정한 검출기 위치에서 이온의 에너지에 따른 편향평판전압은 선형성을 보였으며, $53{\sim}103mm$ 사이의 검출기 위치에서 이온에너지에 대한 최대편향평판전압의 기울기는 $1.61{\sim}0.92$로 검출기위치의 증가에 따라 선형적으로 감소하였다. 본 실험 영역에서 에너지 분해능은 약 $4.16{\sim}11.60%$였으며, 검출기 위치 및 이온에너지의 증가에 따라 향상되었다. 상대적 검출효율은 검출기 위치의 증가에 따라 감소하였다. 제작된 분석기를 다목적 플라즈마 발생장치에 설치하여 DC 플라즈마의 이온에너지 스펙트럼을 측정하였다. 방전전압이 320V, 전류가 0.17A인 DC 플라즈마의 이온온도는 $203{\sim}205eV$로 나타났으며 검출기의 위치에 따른 이온온도의 변화는 없었다. 검출기의 위치에 따른 에너지 분해능은 $18{\sim}21%$로 검출기 위치가 증가할수록 향상되었다.

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붕소 중성자 포획 치료에서 치료 영역 영상화를 위한 예비 연구 (Preliminary Study for Imaging of Therapy Region from Boron Neutron Capture Therapy)

  • 정주영;윤도군;한성민;장홍석;서태석
    • 한국의학물리학회지:의학물리
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    • 제25권3호
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    • pp.151-156
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    • 2014
  • 본 연구의 목적은 붕소 중성자 포획 치료 시 집적된 붕소 영역에서 중성자 선속의 변화와 그에 따른 방출된 즉발 감마선의 검출 시뮬레이션을 통하여 치료 영역에 대한 영상화의 가능성을 확인하고자 함이다. 전산 모사를 통하여 (1) 붕소 유무에 따른 중성자의 영향, (2) 내부와 외부에서의 즉발 감마선량 검출, (3) 즉발 감마선에 대한 에너지 스펙트럼 검출을 수행하였다. 모든 전산 모사는 Monte Carlo n-particle extended (MCNPX, Ver.2.6.0, Los Alamos National Laboratory, Los Alamos, NM, USA)를 이용하여 가상의 물 팬텀과 열중성자(thermal neutron) 소스, 붕소 영역을 지정하였다. 열중성자의 에너지는 1 eV 이하의 에너지였으며 선속은 2,000,000 n/sec.로 설정하였다. 이 때, 발생된 즉발 감마선의 검출은 물 팬텀과 수직 방향으로 위치시키고 납으로 둘러싸인 lutetium-yttrium oxyorthosilicate (Lu0,6Y1,4Si0,5:Ce; LYSO) 섬광체 검출기를 이용하였다. 붕소가 존재하는 영역인 5 cm 깊이에서의 28 분할로서 대략 0.18 cm의 bin을 도출하여 붕소 영역의 얕은 깊이에서부터 급격하게 저하되는 것을 확인하였다. 또한 붕소 영역이 시작되는 지점인 9 cm 깊이에서 감마선의 피크 레벨을 확인하였다. 그리고 478 keV 지점에서 정확한 즉발 감마선 피크가 관찰되는 것을 확인하였다. 478 keV의 즉발 감마선 피크는 41 keV의 반치폭으로 에너지 분해능 값은 8.5%로 측정되었다. 결론적으로 붕소 중성자 포획 치료 시 발생되는 즉발 감마선의 계측으로 치료가 행해지는 부위를 감마 카메라 또는 단일 광자 방출 단층 촬영 기기에서 영상화할 수 있는 가능성을 확인하였다.